技术信息/TechnicalInformation IGBT-模块 IGBT-modules FP50R06W2E3_B11 EasyPIM™2BModulPressFITmitTrench/FeldstoppIGBT3undEmitterControlled3Diode EasyPIM™2BmodulePressFITwithtrench/fieldstopIGBT3andEmitterControlled3Diode 初步数据 PreliminaryData IGBT,逆变器/IGBT,Inverter 最大额定值/MaximumRatedValues 集电极－发射极电压 Collector-emittervoltage Tvj = 25°C VCES 600 V 连续集电极直流电流 ContinuousDCcollectorcurrent TC = 75°C, Tvj max = 175°C TC = 25°C, Tvj max = 175°C IC nom IC 50 65 集电极重复峰值电流 Repetitivepeakcollectorcurrent tP = 1 ms ICRM 100 A 总功率损耗 Totalpowerdissipation TC = 25°C, Tvj max = 175°C Ptot 175 W 栅极－发射极峰值电压 Gate-emitterpeakvoltage VGES +/-20 V 特征值/CharacteristicValues 集电极－发射极饱和电压 Collector-emittersaturationvoltage min. IC = 50 A, VGE = 15 V IC = 50 A, VGE = 15 V IC = 50 A, VGE = 15 V Tvj = 25°C Tvj = 125°C Tvj = 150°C 栅极阈值电压 Gatethresholdvoltage IC = 0,80 mA, VCE = VGE, Tvj = 25°C 栅极电荷 Gatecharge VCE sat A A typ. max. 1,45 1,60 1,70 1,90 V V V VGEth 4,9 5,8 6,5 V VGE = -15 V ... +15 V QG 0,50 µC 内部栅极电阻 Internalgateresistor Tvj = 25°C RGint 0,0 Ω 输入电容 Inputcapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cies 3,10 nF 反向传输电容 Reversetransfercapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cres 0,095 nF 集电极-发射极截止电流 Collector-emittercut-offcurrent VCE = 600 V, VGE = 0 V, Tvj = 25°C ICES 1,0 mA 栅极-发射极漏电流 Gate-emitterleakagecurrent VCE = 0 V, VGE = 20 V, Tvj = 25°C IGES 400 nA td on 0,025 0,025 0,025 µs µs µs tr 0,015 0,018 0,02 µs µs µs td off 0,19 0,21 0,215 µs µs µs tf 0,10 0,135 0,14 µs µs µs 开通延迟时间(电感负载) Turn-ondelaytime,inductiveload IC = 50 A, VCE = 300 V VGE = ±15 V RGon = 8,2 Ω Tvj = 25°C Tvj = 125°C Tvj = 150°C 上升时间(电感负载) Risetime,inductiveload IC = 50 A, VCE = 300 V VGE = ±15 V RGon = 8,2 Ω Tvj = 25°C Tvj = 125°C Tvj = 150°C 关断延迟时间(电感负载) Turn-offdelaytime,inductiveload IC = 50 A, VCE = 300 V VGE = ±15 V RGoff = 8,2 Ω Tvj = 25°C Tvj = 125°C Tvj = 150°C 下降时间(电感负载) Falltime,inductiveload IC = 50 A, VCE = 300 V VGE = ±15 V RGoff = 8,2 Ω Tvj = 25°C Tvj = 125°C Tvj = 150°C 开通损耗能量(每脉冲) Turn-onenergylossperpulse IC = 50 A, VCE = 300 V, LS = 35 nH Tvj = 25°C VGE = ±15 V, di/dt = 2800 A/µs (Tvj = 150°C) Tvj = 125°C RGon = 8,2 Ω Tvj = 150°C Eon 0,55 0,75 0,85 mJ mJ mJ 关断损耗能量(每脉冲） Turn-offenergylossperpulse IC = 50 A, VCE = 300 V, LS = 35 nH Tvj = 25°C VGE = ±15 V, du/dt = 4300 V/µs (Tvj = 150°C) Tvj = 125°C RGoff = 8,2 Ω Tvj = 150°C Eoff 1,20 1,50 1,60 mJ mJ mJ 短路数据 SCdata VGE ≤ 15 V, VCC = 360 V VCEmax = VCES -LsCE ·di/dt ISC 350 250 A A 结－外壳热阻 Thermalresistance,junctiontocase 每个IGBT/perIGBT RthJC 0,75 0,85 K/W 外壳－散热器热阻 Thermalresistance,casetoheatsink 每个IGBT/perIGBT λPaste=1W/(m·K)/λgrease=1W/(m·K) RthCH 0,70 K/W 在开关状态下温度 Temperatureunderswitchingconditions Tvj op -40 preparedby:DK dateofpublication:2013-11-04 approvedby:MB revision:2.0 1 tP ≤ 8 µs, Tvj = 25°C tP ≤ 6 µs, Tvj = 150°C 150 °C 技术信息/TechnicalInformation IGBT-模块 IGBT-modules FP50R06W2E3_B11 初步数据 PreliminaryData 二极管,逆变器/Diode,Inverter 最大额定值/MaximumRatedValues 反向重复峰值电压 Repetitivepeakreversevoltage Tvj = 25°C 连续正向直流电流 ContinuousDCforwardcurrent 正向重复峰值电流 Repetitivepeakforwardcurrent tP = 1 ms I2t-值 I²t-value VR = 0 V, tP = 10 ms, Tvj = 125°C VR = 0 V, tP = 10 ms, Tvj = 150°C VRRM 600 V IF 50 A IFRM 100 A I²t 370 330 特征值/CharacteristicValues min. typ. max. 1,55 1,50 1,45 1,95 A²s A²s 正向电压 Forwardvoltage IF = 50 A, VGE = 0 V IF = 50 A, VGE = 0 V IF = 50 A, VGE = 0 V Tvj = 25°C Tvj = 125°C Tvj = 150°C VF 反向恢复峰值电流 Peakreverserecoverycurrent IF = 50 A, - diF/dt = 2800 A/µs (Tvj=150°C) VR = 300 V VGE = -15 V Tvj = 25°C Tvj = 125°C Tvj = 150°C IRM 78,0 82,0 84,0 A A A 恢复电荷 Recoveredcharge IF = 50 A, - diF/dt = 2800 A/µs (Tvj=150°C) VR = 300 V VGE = -15 V Tvj = 25°C Tvj = 125°C Tvj = 150°C Qr 2,25 4,00 4,40 µC µC µC 反向恢复损耗（每脉冲） Reverserecoveryenergy IF = 50 A, - diF/dt = 2800 A/µs (Tvj=150°C) VR = 300 V VGE = -15 V Tvj = 25°C Tvj = 125°C Tvj = 150°C Erec 0,58 1,00 1,10 mJ mJ mJ V V V 结－外壳热阻 Thermalresistance,junctiontocase 每个二极管/perdiode RthJC 1,10 1,20 K/W 外壳－散热器热阻 Thermalresistance,casetoheatsink 每个二极管/perdiode λPaste=1W/(m·K)/λgrease=1W/(m·K) RthCH 0,90 K/W 在开关状态下温度 Temperatureunderswitchingconditions Tvj op -40 150 °C 二极管,整流器/Diode,Rectifier 最大额定值/MaximumRatedValues 反向重复峰值电压 Repetitivepeakreversevoltage Tvj = 25°C VRRM 1600 V 最大正向均方根电流(每芯片) MaximumRMSforwardcurrentperchip TC = 100°C IFRMSM 60 A 最大整流器输出均方根电流 MaximumRMScurrentatrectifieroutput TC = 100°C IRMSM 60 A 正向浪涌电流 Surgeforwardcurrent tp = 10 ms, Tvj = 25°C tp = 10 ms, Tvj = 150°C IFSM 450 370 A A I2t-值 I²t-value tp = 10 ms, Tvj = 25°C tp = 10 ms, Tvj = 150°C I²t 1000 685 A²s A²s 特征值/CharacteristicValues min. typ. max. VF 1,05 V IR 1,00 mA 每个二极管/perdiode RthJC 1,05 1,15 K/W 外壳－散热器热阻 Thermalresistance,casetoheatsink 每个二极管/perdiode λPaste=1W/(m·K)/λgrease=1W/(m·K) RthCH 0,95 K/W 在开关状态下温度 Temperatureunderswitchingconditions Tvj op preparedby:DK dateofpublication:2013-11-04 approvedby:MB revision:2.0 正向电压 Forwardvoltage Tvj = 150°C, IF = 50 A 反向电流 Reversecurrent Tvj = 150°C, VR = 1600 V 结－外壳热阻 Thermalresistance,junctiontocase 2 °C 技术信息/TechnicalInformation IGBT-模块 IGBT-modules FP50R06W2E3_B11 初步数据 PreliminaryData IGBT,制动-斩波器/IGBT,Brake-Chopper 最大额定值/MaximumRatedValues 集电极－发射极电压 Collector-emittervoltage Tvj = 25°C VCES 600 V 连续集电极直流电流 ContinuousDCcollectorcurrent TC = 75°C, Tvj max = 175°C TC = 25°C, Tvj max = 175°C IC nom IC 50 65 集电极重复峰值电流 Repetitivepeakcollectorcurrent tP = 1 ms ICRM 100 A 总功率损耗 Totalpowerdissipation TC = 25°C, Tvj max = 175°C Ptot 175 W 栅极－发射极峰值电压 Gate-emitterpeakvoltage VGES +/-20 V 特征值/CharacteristicValues 集电极－发射极饱和电压 Collector-emittersaturationvoltage min. IC = 50 A, VGE = 15 V IC = 50 A, VGE = 15 V IC = 50 A, VGE = 15 V Tvj = 25°C Tvj = 125°C Tvj = 150°C 栅极阈值电压 Gatethresholdvoltage IC = 0,80 mA, VCE = VGE, Tvj = 25°C 栅极电荷 Gatecharge VCE sat A A typ. max. 1,45 1,60 1,70 1,90 V V V VGEth 4,9 5,8 6,5 V VGE = -15 V ... +15 V QG 0,50 µC 内部栅极电阻 Internalgateresistor Tvj = 25°C RGint 0,0 Ω 输入电容 Inputcapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cies 3,10 nF 反向传输电容 Reversetransfercapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cres 0,095 nF 集电极-发射极截止电流 Collector-emittercut-offcurrent VCE = 600 V, VGE = 0 V, Tvj = 25°C ICES 1,0 mA 栅极-发射极漏电流 Gate-emitterleakagecurrent VCE = 0 V, VGE = 20 V, Tvj = 25°C IGES 400 nA td on 0,045 0,045 0,045 µs µs µs tr 0,03 0,035 0,04 µs µs µs td off 0,31 0,32 0,33 µs µs µs tf 0,13 0,135 0,14 µs µs µs 开通延迟时间(电感负载) Turn-ondelaytime,inductiveload IC = 50 A, VCE = 300 V VGE = ±15 V RGon = 18 Ω Tvj = 25°C Tvj = 125°C Tvj = 150°C 上升时间(电感负载) Risetime,inductiveload IC = 50 A, VCE = 300 V VGE = ±15 V RGon = 18 Ω Tvj = 25°C Tvj = 125°C Tvj = 150°C 关断延迟时间(电感负载) Turn-offdelaytime,inductiveload IC = 50 A, VCE = 300 V VGE = ±15 V RGoff = 18 Ω Tvj = 25°C Tvj = 125°C Tvj = 150°C 下降时间(电感负载) Falltime,inductiveload IC = 50 A, VCE = 300 V VGE = ±15 V RGoff = 18 Ω Tvj = 25°C Tvj = 125°C Tvj = 150°C 开通损耗能量(每脉冲) Turn-onenergylossperpulse IC = 50 A, VCE = 300 V, LS = 35 nH VGE = ±15 V RGon = 18 Ω Tvj = 25°C Tvj = 125°C Tvj = 150°C Eon 1,50 2,00 2,10 mJ mJ mJ 关断损耗能量(每脉冲） Turn-offenergylossperpulse IC = 50 A, VCE = 300 V, LS = 35 nH VGE = ±15 V RGoff = 18 Ω Tvj = 25°C Tvj = 125°C Tvj = 150°C Eoff 1,20 1,50 1,60 mJ mJ mJ 短路数据 SCdata VGE ≤ 15 V, VCC = 360 V VCEmax = VCES -LsCE ·di/dt tP ≤ 8 µs, Tvj = 25°C tP ≤ 6 µs, Tvj = 150°C ISC 350 250 A A 结－外壳热阻 Thermalresistance,junctiontocase 每个IGBT/perIGBT RthJC 0,75 0,85 K/W 外壳－散热器热阻 Thermalresistance,casetoheatsink 每个IGBT/perIGBT λPaste=1W/(m·K)/λgrease=1W/(m·K) RthCH 0,70 K/W 在开关状态下温度 Temperatureunderswitchingconditions Tvj op -40 preparedby:DK dateofpublication:2013-11-04 approvedby:MB revision:2.0 3 150 °C 技术信息/TechnicalInformation IGBT-模块 IGBT-modules FP50R06W2E3_B11 初步数据 PreliminaryData 二极管，制动-斩波器/Diode,Brake-Chopper 最大额定值/MaximumRatedValues 反向重复峰值电压 Repetitivepeakreversevoltage Tvj = 25°C 连续正向直流电流 ContinuousDCforwardcurrent 正向重复峰值电流 Repetitivepeakforwardcurrent tP = 1 ms I2t-值 I²t-value VR = 0 V, tP = 10 ms, Tvj = 125°C VR = 0 V, tP = 10 ms, Tvj = 150°C VRRM 600 V IF 15 A IFRM 30 A I²t 22,5 20,5 特征值/CharacteristicValues min. typ. max. 1,60 1,55 1,50 2,00 A²s A²s 正向电压 Forwardvoltage IF = 15 A, VGE = 0 V IF = 15 A, VGE = 0 V IF = 15 A, VGE = 0 V Tvj = 25°C Tvj = 125°C Tvj = 150°C VF 反向恢复峰值电流 Peakreverserecoverycurrent IF = 15 A, - diF/dt = 1600 A/µs (Tvj=150°C) VR = 300 V Tvj = 25°C Tvj = 125°C Tvj = 150°C IRM 23,0 25,0 26,0 A A A 恢复电荷 Recoveredcharge IF = 15 A, - diF/dt = 1600 A/µs (Tvj=150°C) VR = 300 V Tvj = 25°C Tvj = 125°C Tvj = 150°C Qr 0,80 1,40 1,70 µC µC µC 反向恢复损耗（每脉冲） Reverserecoveryenergy IF = 15 A, - diF/dt = 1600 A/µs (Tvj=150°C) VR = 300 V Tvj = 25°C Tvj = 125°C Tvj = 150°C Erec 0,16 0,28 0,37 mJ mJ mJ 结－外壳热阻 Thermalresistance,junctiontocase 每个二极管/perdiode RthJC 2,25 2,50 K/W 外壳－散热器热阻 Thermalresistance,casetoheatsink 每个二极管/perdiode λPaste=1W/(m·K)/λgrease=1W/(m·K) RthCH 1,40 K/W 在开关状态下温度 Temperatureunderswitchingconditions Tvj op -40 150 min. typ. max. R25 5,00 kΩ ∆R/R -5 5 % P25 20,0 mW V V V °C 负温度系数热敏电阻/NTC-Thermistor 特征值/CharacteristicValues 额定电阻值 Ratedresistance TC = 25°C R100偏差 DeviationofR100 TC = 100°C, R100 = 493 Ω 耗散功率 Powerdissipation TC = 25°C B-值 B-value R2 = R25 exp [B25/50(1/T2 - 1/(298,15 K))] B25/50 3375 K B-值 B-value R2 = R25 exp [B25/80(1/T2 - 1/(298,15 K))] B25/80 3411 K B-值 B-value R2 = R25 exp [B25/100(1/T2 - 1/(298,15 K))] B25/100 3433 K 根据应用手册标定 Specificationaccordingtothevalidapplicationnote. preparedby:DK dateofpublication:2013-11-04 approvedby:MB revision:2.0 4 技术信息/TechnicalInformation IGBT-模块 IGBT-modules FP50R06W2E3_B11 初步数据 PreliminaryData 模块/Module 绝缘测试电压 Isolationtestvoltage RMS, f = 50 Hz, t = 1 min. 内部绝缘 Internalisolation 基本绝缘(class1,IEC61140) basicinsulation(class1,IEC61140) Al2O3 爬电距离 Creepagedistance 端子-散热片/terminaltoheatsink 端子-端子/terminaltoterminal 11,5 6,3 mm 电气间隙 Clearance 端子-散热片/terminaltoheatsink 端子-端子/terminaltoterminal 10,0 5,0 mm 相对电痕指数 Comperativetrackingindex CTI > 200 VISOL kV 2,5 min. typ. max. LsCE 30 nH RCC'+EE' RAA'+CC' 5,00 6,00 mΩ Tstg -40 125 °C Anpresskraft für mech. Bef. pro Feder mountig force per clamp F 40 - 80 N 重量 Weight G 39 g 杂散电感,模块 Strayinductancemodule 模块引线电阻,端子-芯片 Moduleleadresistance,terminals-chip TC=25°C,每个开关/perswitch 储存温度 Storagetemperature Der Strom im Dauerbetrieb ist auf 25 A effektiv pro Anschlusspin begrenzt. The current under continuous operation is limited to 25 A rms per connector pin. preparedby:DK dateofpublication:2013-11-04 approvedby:MB revision:2.0 5 技术信息/TechnicalInformation IGBT-模块 IGBT-modules FP50R06W2E3_B11 初步数据 PreliminaryData 输出特性IGBT,逆变器（典型) outputcharacteristicIGBT,Inverter(typical) IC=f(VCE) VGE=15V 输出特性IGBT,逆变器（典型) outputcharacteristicIGBT,Inverter(typical) IC=f(VCE) Tvj=150°C 100 100 Tvj = 25°C Tvj = 125°C Tvj = 150°C 80 80 70 70 60 60 50 50 40 40 30 30 20 20 10 10 0 0,0 0,5 1,0 VGE = 19 V VGE = 17 V VGE = 15 V VGE = 13 V VGE = 11 V VGE = 9 V 90 IC [A] IC [A] 90 1,5 VCE [V] 2,0 2,5 0 3,0 传输特性IGBT,逆变器(典型) transfercharacteristicIGBT,Inverter(typical) IC=f(VGE) VCE=20V 0,0 0,5 1,0 1,5 2,0 2,5 3,0 VCE [V] 3,5 4,0 4,5 5,0 80 90 100 开关损耗IGBT,逆变器（典型) switchinglossesIGBT,Inverter(typical) Eon=f(IC),Eoff=f(IC) VGE=±15V,RGon=8.2Ω,RGoff=8.2Ω,VCE=300V 100 4,0 Tvj = 25°C Tvj = 125°C Tvj = 150°C 90 Eon, Tvj = 125°C Eoff, Tvj = 125°C Eon, Tvj = 150°C Eoff, Tvj = 150°C 3,5 80 3,0 70 2,5 E [mJ] IC [A] 60 50 40 2,0 1,5 30 1,0 20 0,5 10 0 5 6 7 8 9 VGE [V] 10 11 0,0 12 preparedby:DK dateofpublication:2013-11-04 approvedby:MB revision:2.0 6 0 10 20 30 40 50 60 IC [A] 70 技术信息/TechnicalInformation IGBT-模块 IGBT-modules FP50R06W2E3_B11 初步数据 PreliminaryData 开关损耗IGBT,逆变器（典型) switchinglossesIGBT,Inverter(typical) Eon=f(RG),Eoff=f(RG) VGE=±15V,IC=50A,VCE=300V 瞬态热阻抗IGBT,逆变器 transientthermalimpedanceIGBT,Inverter ZthJH=f(t) 7,0 10 Eon, Tvj = 125°C Eoff, Tvj = 125°C Eon, Tvj = 150°C Eoff, Tvj = 150°C 6,0 ZthJH : IGBT 5,0 E [mJ] ZthJH [K/W] 4,0 3,0 1 2,0 1,0 0,0 i: 1 2 3 4 ri[K/W]: 0,084 0,195 0,587 0,585 τi[s]: 0,0005 0,005 0,05 0,2 0 10 20 30 40 50 RG [Ω] 60 70 80 0,1 0,001 90 反偏安全工作区IGBT,逆变器（RBSOA） reversebiassafeoperatingareaIGBT,Inverter(RBSOA) IC=f(VCE) VGE=±15V,RGoff=8.2Ω,Tvj=150°C 1 10 100 IC, Modul IC, Chip 100 Tvj = 25°C Tvj = 125°C Tvj = 150°C 90 90 80 80 70 70 60 60 IF [A] IC [A] 0,1 t [s] 正向偏压特性二极管,逆变器（典型) forwardcharacteristicofDiode,Inverter(typical) IF=f(VF) 110 50 50 40 40 30 30 20 20 10 10 0 0,01 0 100 200 300 400 VCE [V] 500 600 0 700 preparedby:DK dateofpublication:2013-11-04 approvedby:MB revision:2.0 7 0,0 0,2 0,4 0,6 0,8 1,0 1,2 VF [V] 1,4 1,6 1,8 2,0 技术信息/TechnicalInformation IGBT-模块 IGBT-modules FP50R06W2E3_B11 初步数据 PreliminaryData 开关损耗二极管,逆变器（典型) switchinglossesDiode,Inverter(typical) Erec=f(IF) RGon=8.2Ω,VCE=300V 开关损耗二极管,逆变器（典型) switchinglossesDiode,Inverter(typical) Erec=f(RG) IF=50A,VCE=300V 2,0 1,4 Erec, Tvj = 125°C Erec, Tvj = 150°C 1,8 Erec, Tvj = 125°C Erec, Tvj = 150°C 1,2 1,6 1,0 1,4 0,8 E [mJ] E [mJ] 1,2 1,0 0,6 0,8 0,6 0,4 0,4 0,2 0,2 0,0 0 10 20 30 40 50 60 IF [A] 70 80 90 0,0 100 瞬态热阻抗二极管,逆变器 transientthermalimpedanceDiode,Inverter ZthJH=f(t) 0 10 20 30 40 50 RG [Ω] 60 70 80 90 1,4 1,6 正向偏压特性二极管,整流器（典型) forwardcharacteristicofDiode,Rectifier(typical) IF=f(VF) 10 100 ZthJH : Diode Tvj = 25°C Tvj = 150°C 90 80 70 IF [A] ZthJH [K/W] 60 1 50 40 30 20 i: 1 2 3 4 ri[K/W]: 0,166 0,359 0,821 0,654 τi[s]: 0,0005 0,005 0,05 0,2 0,1 0,001 0,01 0,1 t [s] 1 10 0 10 preparedby:DK dateofpublication:2013-11-04 approvedby:MB revision:2.0 8 0,0 0,2 0,4 0,6 0,8 VF [V] 1,0 1,2 技术信息/TechnicalInformation IGBT-模块 IGBT-modules FP50R06W2E3_B11 初步数据 PreliminaryData 输出特性IGBT,制动-斩波器（典型) outputcharacteristicIGBT,Brake-Chopper(typical) IC=f(VCE) VGE=15V 正向偏压特性二极管，制动-斩波器（典型) forwardcharacteristicofDiode,Brake-Chopper(typical) IF=f(VF) 100 30 Tvj = 25°C Tvj = 125°C Tvj = 150°C 80 24 70 21 60 18 50 15 40 12 30 9 20 6 10 3 0 0,0 0,5 1,0 1,5 VCE [V] 2,0 2,5 0 3,0 负温度系数热敏电阻温度特性 NTC-Thermistor-temperaturecharacteristic(typical) R=f(T) 100000 Rtyp R[Ω] 10000 1000 100 0 20 40 Tvj = 25°C Tvj = 125°C Tvj = 150°C 27 IF [A] IC [A] 90 60 80 100 TC [°C] 120 140 160 preparedby:DK dateofpublication:2013-11-04 approvedby:MB revision:2.0 9 0,0 0,3 0,6 0,9 1,2 VF [V] 1,5 1,8 2,1 2,4 技术信息/TechnicalInformation IGBT-模块 IGBT-modules FP50R06W2E3_B11 初步数据 PreliminaryData 接线图/circuit_diagram_headline J 封装尺寸/packageoutlines Infineon preparedby:DK dateofpublication:2013-11-04 approvedby:MB revision:2.0 10 技术信息/TechnicalInformation IGBT-模块 IGBT-modules FP50R06W2E3_B11 初步数据 PreliminaryData 使用条件和条款 使用条件和条款 产品规格书中的数据是专门为技术人员提供的，您和您的技术部门应该针对您的应用来评估产品及产品的所有参数是否适合 产品规格书中所描述的产品特性是被保证的，任何这种保证严格依照供货协议中所涉及的条件和条款。除此之外，产品和产品的特性没有任何的保证 请注意安装及应用指南中的信息。 如果您有超出规格书所提供的产品信息的要求或者对我们的产品针对的特殊应用有疑虑的话，请联系我们负责你的销售部门（详情查询 www.infineon.com）。对那些特别感兴趣的问题我们将提供相应的应用手册 由于技术需要，我们的产品可能含有危险物质。如果需要查询类似问题请联系我们负责你的销售部门 如果您想将我们的产品用于航天，健康，危及生命或者生命维持等应用，请申明。 请注意，对这类应用我们强烈建议 -执行联合的风险和质量评估 -得到质量协议的结论 -建立联合的测试和出厂产品检查，我们可以根据测试的实际情况供货 如果有必要，请根据实际需要将类似的说明给你的客户 保留产品规格书的修改权 Terms&Conditionsofusage Thedatacontainedinthisproductdatasheetisexclusivelyintendedfortechnicallytrainedstaff.Youandyourtechnicaldepartmentswill havetoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproductdatawithrespecttosuch application. Thisproductdatasheetisdescribingthecharacteristicsofthisproductforwhichawarrantyisgranted.Anysuchwarrantyisgranted exclusivelypursuantthetermsandconditionsofthesupplyagreement.Therewillbenoguaranteeofanykindfortheproductandits characteristics.Theinformationinthevalidapplication-andassemblynotesofthemodulemustbeconsidered. Shouldyourequireproductinformationinexcessofthedatagiveninthisproductdatasheetorwhichconcernsthespecificapplicationof ourproduct,pleasecontactthesalesoffice,whichisresponsibleforyou(seewww.infineon.com).Forthosethatarespecifically interestedwemayprovideapplicationnotes. Duetotechnicalrequirementsourproductmaycontaindangeroussubstances.Forinformationonthetypesinquestionpleasecontactthe salesoffice,whichisresponsibleforyou. ShouldyouintendtousetheProductinaviationapplications,inhealthorliveendangeringorlifesupportapplications,pleasenotify.Please note,thatforanysuchapplicationsweurgentlyrecommend -toperformjointRiskandQualityAssessments; -theconclusionofQualityAgreements; -toestablishjointmeasuresofanongoingproductsurvey,andthatwemaymakedeliverydependedon therealizationofanysuchmeasures. Ifandtotheextentnecessary,pleaseforwardequivalentnoticestoyourcustomers. Changesofthisproductdatasheetarereserved. preparedby:DK dateofpublication:2013-11-04 approvedby:MB revision:2.0 11