技术信息/TechnicalInformation IGBT-模块 IGBT-Module F4-75R07W2H3_B51 EasyBRIDGE模块采用CoolMOS带有pressfit压接管脚和温度检测NTC EasyBRIDGEmodulewithCoolMOSandPressFIT/NTC 初步数据/PreliminaryData J VCES = 650V IC nom = 75A / ICRM = 150A 典型应用 • 太阳能应用 TypicalApplications • SolarApplications 电气特性 • 增加阻断电压至650V • 低VCEsat ElectricalFeatures • Increasedblockingvoltagecapabilityto650V • LowVCEsat 机械特性 • 低热阻的三氧化二铝（Al2O3衬底 • 集成NTC温度传感器 • PressFIT压接技术 MechanicalFeatures • Al2O3SubstratewithLowThermalResistance • IntegratedNTCtemperaturesensor • PressFITContactTechnology ModuleLabelCode BarcodeCode128 DMX-Code preparedby:MB dateofpublication:2014-10-15 approvedby:AKDA revision:2.0 ContentoftheCode Digit ModuleSerialNumber ModuleMaterialNumber ProductionOrderNumber Datecode(ProductionYear) Datecode(ProductionWeek) 1-5 6-11 12-19 20-21 22-23 ULapproved(E83335) 1 技术信息/TechnicalInformation IGBT-模块 IGBT-Module F4-75R07W2H3_B51 初步数据 PreliminaryData IGBT,逆变器/IGBT,Inverter 最大额定值/MaximumRatedValues 集电极－发射极电压 Collector-emittervoltage Tvj = 25°C 集电极电流 Implementedcollectorcurrent VCES 650 V ICN 75 A 连续集电极直流电流 ContinuousDCcollectorcurrent TC = 100°C, Tvj max = 175°C TC = 25°C, Tvj max = 175°C IC nom IC 37,5 75 集电极重复峰值电流 Repetitivepeakcollectorcurrent tP = 1 ms ICRM 150 A 总功率损耗 Totalpowerdissipation TC = 25°C, Tvj max = 175°C Ptot 250 W VGES +/-20 V 栅极－发射极峰值电压 Gate-emitterpeakvoltage 特征值/CharacteristicValues 集电极－发射极饱和电压 Collector-emittersaturationvoltage min. IC = 37,5 A, VGE = 15 V IC = 37,5 A, VGE = 15 V IC = 37,5 A, VGE = 15 V Tvj = 25°C Tvj = 125°C Tvj = 150°C VCE sat A A typ. max. 1,35 1,40 1,40 1,55 V V V 5,80 6,50 V 栅极阈值电压 Gatethresholdvoltage IC = 1,20 mA, VCE = VGE, Tvj = 25°C 栅极电荷 Gatecharge VGE = -15 V ... +15 V QG 0,80 µC 内部栅极电阻 Internalgateresistor Tvj = 25°C RGint 0,0 Ω 输入电容 Inputcapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cies 4,70 nF 反向传输电容 Reversetransfercapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cres 0,14 nF 集电极-发射极截止电流 Collector-emittercut-offcurrent VCE = 650 V, VGE = 0 V, Tvj = 25°C ICES 1,0 mA 栅极-发射极漏电流 Gate-emitterleakagecurrent VCE = 0 V, VGE = 20 V, Tvj = 25°C IGES 100 nA VGEth 开通延迟时间(电感负载) Turn-ondelaytime,inductiveload IC = 37,5 A, VCE = 400 V VGE = ±15 V RGon = 8,2 Ω Tvj = 25°C Tvj = 125°C Tvj = 150°C 上升时间(电感负载) Risetime,inductiveload IC = 37,5 A, VCE = 400 V VGE = ±15 V RGon = 8,2 Ω Tvj = 25°C Tvj = 125°C Tvj = 150°C 关断延迟时间(电感负载) Turn-offdelaytime,inductiveload IC = 37,5 A, VCE = 400 V VGE = ±15 V RGoff = 8,2 Ω Tvj = 25°C Tvj = 125°C Tvj = 150°C 下降时间(电感负载) Falltime,inductiveload IC = 37,5 A, VCE = 400 V VGE = ±15 V RGoff = 8,2 Ω Tvj = 25°C Tvj = 125°C Tvj = 150°C 开通损耗能量(每脉冲) Turn-onenergylossperpulse IC = 37,5 A, VCE = 400 V, LS = 20 nH Tvj = 25°C VGE = ±15 V, di/dt = 1900 A/µs (Tvj = 150°C) Tvj = 125°C RGon = 8,2 Ω Tvj = 150°C 关断损耗能量(每脉冲） Turn-offenergylossperpulse 4,90 0,027 0,027 0,027 µs µs µs 0,016 0,017 0,018 µs µs µs 0,23 0,27 0,28 µs µs µs 0,01 0,02 0,02 µs µs µs Eon 1,10 1,45 1,50 mJ mJ mJ IC = 37,5 A, VCE = 400 V, LS = 20 nH Tvj = 25°C VGE = ±15 V, du/dt = 4000 V/µs (Tvj = 150°C) Tvj = 125°C RGoff = 8,2 Ω Tvj = 150°C Eoff 0,65 1,05 1,15 mJ mJ mJ 短路数据 SCdata VGE ≤ 15 V, VCC = 400 V VCEmax = VCES -LsCE ·di/dt ISC 430 A 结－外壳热阻 Thermalresistance,junctiontocase 每个IGBT/perIGBT preparedby:MB dateofpublication:2014-10-15 approvedby:AKDA revision:2.0 tP ≤ 5 µs, Tvj = 150°C td on tr td off tf RthJC 2 0,55 0,60 K/W 技术信息/TechnicalInformation IGBT-模块 IGBT-Module F4-75R07W2H3_B51 初步数据 PreliminaryData 外壳－散热器热阻 Thermalresistance,casetoheatsink 每个IGBT/perIGBT λPaste=1W/(m·K)/λgrease=1W/(m·K) RthCH 在开关状态下温度 Temperatureunderswitchingconditions 0,75 Tvj op -40 K/W 150 °C 二极管,逆变器/Diode,Inverter 最大额定值/MaximumRatedValues 反向重复峰值电压 Repetitivepeakreversevoltage Tvj = 25°C VRRM 650 V 正向电流 Implementedforwardcurrent IFN 50 A 连续正向直流电流 ContinuousDCforwardcurrent IF 37,5 A IFRM 100 A I²t 370 330 正向重复峰值电流 Repetitivepeakforwardcurrent tP = 1 ms I2t-值 I²t-value VR = 0 V, tP = 10 ms, Tvj = 125°C VR = 0 V, tP = 10 ms, Tvj = 150°C 特征值/CharacteristicValues min. A²s A²s typ. max. 1,70 VF 1,45 1,35 1,30 IF = 37,5 A, - diF/dt = 1900 A/µs (Tvj=150°C) Tvj = 25°C VR = 400 V Tvj = 125°C VGE = -15 V Tvj = 150°C IRM 49,0 59,0 63,0 A A A 恢复电荷 Recoveredcharge IF = 37,5 A, - diF/dt = 1900 A/µs (Tvj=150°C) Tvj = 25°C VR = 400 V Tvj = 125°C VGE = -15 V Tvj = 150°C Qr 1,90 3,60 4,00 µC µC µC 反向恢复损耗（每脉冲） Reverserecoveryenergy IF = 37,5 A, - diF/dt = 1900 A/µs (Tvj=150°C) Tvj = 25°C VR = 400 V Tvj = 125°C VGE = -15 V Tvj = 150°C Erec 0,50 1,00 1,20 mJ mJ mJ 结－外壳热阻 Thermalresistance,junctiontocase 每个二极管/perdiode RthJC 1,00 1,10 K/W 外壳－散热器热阻 Thermalresistance,casetoheatsink 每个二极管/perdiode λPaste=1W/(m·K)/λgrease=1W/(m·K) RthCH 1,25 K/W 正向电压 Forwardvoltage IF = 37,5 A, VGE = 0 V IF = 37,5 A, VGE = 0 V IF = 37,5 A, VGE = 0 V Tvj = 25°C Tvj = 125°C Tvj = 150°C 反向恢复峰值电流 Peakreverserecoverycurrent 在开关状态下温度 Temperatureunderswitchingconditions Tvj op preparedby:MB dateofpublication:2014-10-15 approvedby:AKDA revision:2.0 3 -40 150 V V V °C 技术信息/TechnicalInformation IGBT-模块 IGBT-Module F4-75R07W2H3_B51 初步数据 PreliminaryData 旁路二极管/Bypass-Diode 最大额定值/MaximumRatedValues 反向重复峰值电压 Repetitivepeakreversevoltage Tvj = 25°C VRRM 800 V 最大正向均方根电流(每芯片) MaximumRMSforwardcurrentperchip TC = 80°C IFRMSM 50 A 最大整流器输出均方根电流 MaximumRMScurrentatrectifieroutput TC = 80°C IRMSM 75 A 正向浪涌电流 Surgeforwardcurrent tp = 10 ms, Tvj = 25°C tp = 10 ms, Tvj = 150°C IFSM 800 640 A A I2t-值 I²t-value tp = 10 ms, Tvj = 25°C tp = 10 ms, Tvj = 150°C I²t 3200 2050 A²s A²s 特征值/CharacteristicValues min. typ. max. 正向电压 Forwardvoltage Tvj = 150°C, IF = 50 A VF 0,90 V 反向电流 Reversecurrent Tvj = 150°C, VR = 800 V IR 0,20 mA 结－外壳热阻 Thermalresistance,junctiontocase 每个二极管/perdiode RthJC 0,45 0,55 K/W 外壳－散热器热阻 Thermalresistance,casetoheatsink 每个二极管/perdiode λPaste=1W/(m·K)/λgrease=1W/(m·K) RthCH 0,45 K/W 在开关状态下温度 Temperatureunderswitchingconditions Tvj op -40 150 °C Diode,轉換器/Diode,Boost 最大额定值/MaximumRatedValues 反向重复峰值电压 Repetitivepeakreversevoltage Tvj = 25°C 连续正向直流电流 ContinuousDCforwardcurrent 正向重复峰值电流 Repetitivepeakforwardcurrent tP = 1 ms I2t-值 I²t-value VR = 0 V, tP = 10 ms, Tvj = 125°C VRRM 650 V IF 24 A IFRM 48 A I²t 72,0 A²s 特征值/CharacteristicValues min. typ. max. 1,50 1,65 1,85 正向电压 Forwardvoltage IF = 24 A, VGE = 0 V IF = 24 A, VGE = 0 V Tvj = 25°C Tvj = 125°C 反向恢复峰值电流 Peakreverserecoverycurrent IF = 24 A, - diF/dt = 1500 A/µs (Tvj=125°C) VR = 400 V Tvj = 25°C Tvj = 125°C IRM 12,5 12,5 A A 恢复电荷 Recoveredcharge IF = 24 A, - diF/dt = 1500 A/µs (Tvj=125°C) VR = 400 V Tvj = 25°C Tvj = 125°C Qr 0,30 0,30 µC µC 反向恢复损耗（每脉冲） Reverserecoveryenergy IF = 24 A, - diF/dt = 1500 A/µs (Tvj=125°C) VR = 400 V Tvj = 25°C Tvj = 125°C Erec 0,03 0,03 mJ mJ 结－外壳热阻 Thermalresistance,junctiontocase 每个二极管/perdiode RthJC 0,90 1,00 K/W 外壳－散热器热阻 Thermalresistance,casetoheatsink 每个二极管/perdiode λPaste=1W/(m·K)/λgrease=1W/(m·K) RthCH 0,95 K/W 在开关状态下温度 Temperatureunderswitchingconditions VF Tvj op preparedby:MB dateofpublication:2014-10-15 approvedby:AKDA revision:2.0 4 -40 125 V V °C 技术信息/TechnicalInformation IGBT-模块 IGBT-Module F4-75R07W2H3_B51 初步数据 PreliminaryData MOSFET/MOSFET 最大额定值/MaximumRatedValues 漏源击穿电压 Drain-sourcebreakdownvoltage 直流漏极电流 DCdraincurrent 脉冲漏极电流，tp由Tjmax限定 Pulseddraincurrent,tplimitedbyTjmax 总耗散功率 Totalpowerdissipation 栅源峰值电压 Gate-sourcepeakvoltage Tvj = 25°C VDSS 650 V TC = 100°C TC = 25°C ID nom ID 30 50 ID puls 100 A Ptot 520 W VGSS +/-20 V TC = 25°C 特征值/CharacteristicValues 漏源通态电阻 Drain-sourceonresistance 栅极阈值电压 Gatethresholdvoltage 栅极电荷 Gatecharge 内部栅极电阻 Internalgateresistor 输入电容 Inputcapacitance 输出电容 Outputcapacitance 反向传输电容 Reversetransfercapacitance 零栅电压漏极电流 Zerogatevoltagedraincurrent 栅极漏电流 Gate-sourceleakagecurrent 开通延迟时间(电感负载) Turnondelaytime,inductiveload 上升时间(电感负载) Risetime,inductiveload 关断延迟时间(电感负载) Turnoffdelaytime,inductiveload 下降时间(电感负载) Falltime,inductiveload 开通损耗(每脉冲) Turn-onenergylossperpulse 关断损耗(每脉冲） Turn-offenergylossperpulse 结－外壳热阻 Thermalresistance,junctiontocase 外壳－散热器热阻 Thermalresistance,casetoheatsink min. ID = 30 A, VGS = 10 V, Tvj = 25°C RDS on ID = 3,30 mA, VDS = VGS, Tvj = 25°C VGS(th) 2,50 A A typ. max. 38,0 42,0 mΩ 3,00 3,50 V VGS = 10 V, VDD= 480 V QG 0,33 µC Tvj = 25°C RGint 0,7 Ω f = 1 MHz, Tvj = 25°C, VDS = 25 V, VGS = 0 V Ciss 8,00 nF f = 1 MHz, Tvj = 25°C, VDS = 25 V, VGS = 0 V Coss 7,50 nF f = 1 MHz, Tvj = 25°C, VDS = 25 V, VGS = 0 V Crss 0,80 nF VDS = 650 V, VGS = 0 V, Tvj = 25°C IDSS 2,00 µA VDS = 0 V, VGS = 20 V, Tvj = 25°C IGSS 100 nA ID = 30 A, VDS = 400 V VGS = 10 V RG = 7,50 Ω ID = 30 A, VDS = 400 V VGS = 10 V RG = 7,50 Ω ID = 30 A, VDS = 400 V VGS = 10 V RG = 7,50 Ω ID = 30 A, VDS = 400 V VGS = 10 V RG = 7,50 Ω ID = 30 A, VDS = 400 V, Lσ = 25 nH VGS = 10 V, di/dt = 1600 A/µs (Tvj = 150) RG = 7,50 Ω ID = 30 A, VDS = 400 V, Lσ = 25 nH VGS = 10 V, du/dt = 19500 V/µs (Tvj = 150) RG = 7,50 Ω Tvj = 25°C Tvj = 125°C Tvj = 150°C Tvj = 25°C Tvj = 125°C Tvj = 150°C Tvj = 25°C Tvj = 125°C Tvj = 150°C Tvj = 25°C Tvj = 125°C Tvj = 150°C Tvj = 25°C Tvj = 125°C Tvj = 150°C Tvj = 25°C Tvj = 125°C Tvj = 150°C pro MOS-FET / per MOS-FET λPaste = 1 W/(m*K) /λgrease = 1 W/(m*K) 在开关状态下温度 Temperatureunderswitchingconditions 20,0 17,5 16,0 15,0 15,5 16,0 210 220 220 7,50 9,00 9,00 0,32 0,36 0,37 0,08 0,09 0,095 td on tr td off tf Eon Eoff preparedby:MB dateofpublication:2014-10-15 approvedby:AKDA revision:2.0 5 ns mJ mJ 0,40 K/W RthCH 0,40 K/W -40 min. Tvj = 25°C Tvj = 125°C Tvj = 150°C ns 0,35 Revers-Diode/reverse-diode IS = 50 A, VGS = 0 V IS = 50 A, VGS = 0 V IS = 50 A, VGS = 0 V ns RthJC Tvj op 正向电压 Forwardvoltage ns VSD 150 typ. 0,85 0,70 °C max. 1,30 V 技术信息/TechnicalInformation IGBT-模块 IGBT-Module F4-75R07W2H3_B51 初步数据 PreliminaryData 负温度系数热敏电阻/NTC-Thermistor 特征值/CharacteristicValues min. typ. max. 额定电阻值 Ratedresistance TC = 25°C R100偏差 DeviationofR100 TC = 100°C, R100 = 493 Ω 耗散功率 Powerdissipation TC = 25°C B-值 B-value R2 = R25 exp [B25/50(1/T2 - 1/(298,15 K))] B25/50 3375 K B-值 B-value R2 = R25 exp [B25/80(1/T2 - 1/(298,15 K))] B25/80 3411 K B-值 B-value R2 = R25 exp [B25/100(1/T2 - 1/(298,15 K))] B25/100 3433 K R25 5,00 ∆R/R -5 P25 kΩ 5 % 20,0 mW 根据应用手册标定 Specificationaccordingtothevalidapplicationnote. 模块/Module 绝缘测试电压 Isolationtestvoltage RMS, f = 50 Hz, t = 1 min. 内部绝缘 Internalisolation 基本绝缘(class1,IEC61140) basicinsulation(class1,IEC61140) Al2O3 爬电距离 Creepagedistance 端子至散热器/terminaltoheatsink 端子至端子/terminaltoterminal 11,5 6,3 mm 电气间隙 Clearance 端子至散热器/terminaltoheatsink 端子至端子/terminaltoterminal 10,0 5,0 mm 相对电痕指数 Comperativetrackingindex VISOL CTI 模块引线电阻,端子-芯片 Moduleleadresistance,terminals-chip TC=25°C,每个开关/perswitch 储存温度 Storagetemperature nH RCC'+EE' 3,00 mΩ Anpresskraft für mech. Bef. pro Feder mountig force per clamp F 40 重量 Weight G dateofpublication:2014-10-15 approvedby:AKDA revision:2.0 6 max. 17 -40 preparedby:MB typ. LsCE Tstg Der Strom im Dauerbetrieb ist auf 25 A effektiv pro Anschlusspin begrenzt. The current under continuous operation is limited to 25 A rms per connector pin. > 200 min. 杂散电感,模块 Strayinductancemodule kV 2,5 39 125 °C 80 N g 技术信息/TechnicalInformation IGBT-模块 IGBT-Module F4-75R07W2H3_B51 初步数据 PreliminaryData 输出特性IGBT,逆变器（典型) outputcharacteristicIGBT,Inverter(typical) IC=f(VCE) VGE=15V 输出特性IGBT,逆变器（典型) outputcharacteristicIGBT,Inverter(typical) IC=f(VCE) Tvj=150°C 75 75 Tvj = 25°C Tvj = 125°C Tvj = 150°C 70 65 60 60 55 55 50 50 45 45 40 40 IC [A] IC [A] 65 35 35 30 30 25 25 20 20 15 15 10 10 5 5 0 0,0 0,2 0,4 0,6 VGE = 19V VGE = 17V VGE = 15V VGE = 13V VGE = 11V VGE = 9V 70 0,8 1,0 1,2 VCE [V] 1,4 1,6 1,8 0 2,0 传输特性IGBT,逆变器(典型) transfercharacteristicIGBT,Inverter(typical) IC=f(VGE) VCE=20V 0,0 0,5 1,0 1,5 VCE [V] 2,0 2,5 3,0 开关损耗IGBT,逆变器（典型) switchinglossesIGBT,Inverter(typical) Eon=f(IC),Eoff=f(IC) VGE=±15V,RGon=8.2Ω,RGoff=8.2Ω,VCE=400V 75 4,0 Tvj = 25°C Tvj = 125°C Tvj = 150°C 70 65 Eon, Tvj = 125°C Eoff, Tvj = 125°C Eon, Tvj = 150°C Eoff, Tvj = 150°C 3,5 60 3,0 55 50 2,5 40 E [mJ] IC [A] 45 35 30 2,0 1,5 25 20 1,0 15 10 0,5 5 0 5 6 7 8 9 0,0 10 VGE [V] preparedby:MB dateofpublication:2014-10-15 approvedby:AKDA revision:2.0 7 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 IC [A] 技术信息/TechnicalInformation IGBT-模块 IGBT-Module F4-75R07W2H3_B51 初步数据 PreliminaryData 开关损耗IGBT,逆变器（典型) switchinglossesIGBT,Inverter(typical) Eon=f(RG),Eoff=f(RG) VGE=±15V,IC=37.5A,VCE=400V 瞬态热阻抗IGBT,逆变器 transientthermalimpedanceIGBT,Inverter ZthJH=f(t) 9,0 10 Eon, Tvj = 125°C Eoff, Tvj = 125°C Eon, Tvj = 150°C Eoff, Tvj = 150°C 8,0 ZthJH : IGBT 7,0 1 ZthJH [K/W] E [mJ] 6,0 5,0 4,0 3,0 0,1 2,0 i: 1 2 3 4 ri[K/W]: 0,0255 0,1235 0,257 0,894 τi[s]: 0,0005 0,005 0,05 0,2 1,0 0,0 0 10 20 30 40 RG [Ω] 50 60 70 0,01 0,001 80 反偏安全工作区IGBT,逆变器（RBSOA） reversebiassafeoperatingareaIGBT,Inverter(RBSOA) IC=f(VCE) VGE=±15V,RGoff=8,2Ω,Tvj=150°C 0,01 0,1 t [s] 1 10 正向偏压特性二极管,逆变器（典型) forwardcharacteristicofDiode,Inverter(typical) IF=f(VF) 90 75 IC, Modul IC, Chip Tvj = 25 °C Tvj = 125 °C Tvj = 150 °C 70 65 75 60 55 60 50 IF [A] IC [A] 45 45 40 35 30 30 25 20 15 15 10 5 0 0 100 200 300 400 VCE [V] 500 600 0 700 preparedby:MB dateofpublication:2014-10-15 approvedby:AKDA revision:2.0 8 0,0 0,2 0,4 0,6 0,8 1,0 1,2 VF [V] 1,4 1,6 1,8 2,0 技术信息/TechnicalInformation IGBT-模块 IGBT-Module F4-75R07W2H3_B51 初步数据 PreliminaryData 开关损耗二极管,逆变器（典型) switchinglossesDiode,Inverter(typical) Erec=f(IF) RGon=8.2Ω,VCE=400V 开关损耗二极管,逆变器（典型) switchinglossesDiode,Inverter(typical) Erec=f(RG) IF=37.5A,VCE=400V 2,0 1,6 Erec, Tvj = 125°C Erec, Tvj = 150°C 1,8 Erec, Tvj = 125°C Erec, Tvj = 150°C 1,4 1,6 1,2 1,4 1,0 E [mJ] E [mJ] 1,2 1,0 0,8 0,8 0,6 0,6 0,4 0,4 0,2 0,2 0,0 0 0,0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 IF [A] 瞬态热阻抗二极管,逆变器 transientthermalimpedanceDiode,Inverter ZthJH=f(t) 0 10 20 30 40 RG [Ω] 50 60 70 80 正向偏压特性旁路二极管（典型) forwardcharacteristicofBypass-Diode(typical) IF=f(VF) 10 100 ZthJH : Diode Tvj = 25 °C Tvj = 150 °C 90 80 60 IF [A] ZthJH [K/W] 70 1 50 40 30 20 i: 1 2 3 4 ri[K/W]: 0,17 0,37 0,72 0,99 τi[s]: 0,0005 0,005 0,05 0,2 0,1 0,001 0,01 0,1 t [s] 1 10 0 10 preparedby:MB dateofpublication:2014-10-15 approvedby:AKDA revision:2.0 9 0,0 0,2 0,4 0,6 VF [V] 0,8 1,0 1,2 技术信息/TechnicalInformation IGBT-模块 IGBT-Module F4-75R07W2H3_B51 初步数据 PreliminaryData 正向偏压特性Diode,轉換器（典型) forwardcharacteristicofDiode,Boost(typical) IF=f(VF) 开关损耗Diode,轉換器（典型) switchinglossesDiode,Boost(typical) Erec=f(IF) RGon=8.2Ω,VCE=400V 48 0,0375 Tvj = 25 °C Tvj = 125 °C 44 Erec, Tvj = 125°C 40 36 32 0,0250 E [mJ] IF [A] 28 24 20 16 0,0125 12 8 4 0 0,0 0,4 0,8 1,2 VF [V] 1,6 2,0 2,4 开关损耗Diode,轉換器（典型) switchinglossesDiode,Boost(typical) Erec=f(RG) IF=24A,VCE=400V 0,0000 0 6 12 18 24 IF [A] 30 36 42 48 瞬态热阻抗Diode,轉換器 transientthermalimpedanceDiode,Boost ZthJH=f(t) 0,0375 10 Erec, Tvj = 125°C ZthJH : Diode 1 E [mJ] ZthJH [K/W] 0,0250 0,0125 0,1 i: 1 2 3 4 ri[K/W]: 0,15 0,45 0,75 0,5 τi[s]: 0,0005 0,005 0,05 0,2 0,0000 0,0 0,01 0,001 7,5 15,0 22,5 30,0 37,5 45,0 52,5 60,0 67,5 75,0 RG [Ω] preparedby:MB dateofpublication:2014-10-15 approvedby:AKDA revision:2.0 10 0,01 0,1 t [s] 1 10 技术信息/TechnicalInformation IGBT-模块 IGBT-Module F4-75R07W2H3_B51 初步数据 PreliminaryData 瞬态热阻抗MOSFET transientthermalimpedanceMOSFET ZthJH=f(t) 输出特性MOSFET（典型) outputcharacteristicMOSFET(typical) ID=f(VDS) Tvj=150°C 1 100 ZthJH: Mosfet VGS = 20 V VGS = 10 V VGS = 8 V VGS = 6 V VGS = 5 V VGS = 4 V 90 80 70 ID [A] ZthJH [K/W] 60 0,1 50 40 30 20 i: 1 2 3 4 ri[K/W]: 0,06 0,0225 0,06 0,6075 τi[s]: 0,0005 0,005 0,01 0,2 0,01 0,001 0,01 0,1 t [s] 1 10 0 10 传输特性MOSFET（典型) transfercharacteristicMOSFET(typical) ID=f(VGS) VDS=10V 0 1 2 3 4 5 6 VDS [V] 7 8 9 10 48 54 60 开关损耗MOSFET（典型) switchinglossesMOSFET(typical) Eon=f(IC),Eoff=f(IC) VGS=±15V,RGon=7,5Ω,RGoff=7,5Ω,VDS=400V 160 1,50 Tvj = 25 °C Tvj = 125 °C Tvj = 150 °C 150 140 Eon, Tvj = 125°C Eoff, Tvj = 150°C Eon, Tvj = 125°C Eoff, Tvj = 150°C 1,35 130 1,20 120 1,05 110 100 0,90 E [mJ] ID [A] 90 80 70 0,75 0,60 60 50 0,45 40 0,30 30 20 0,15 10 0 0 1 2 3 4 5 6 VGS [V] 7 8 9 0,00 10 preparedby:MB dateofpublication:2014-10-15 approvedby:AKDA revision:2.0 11 0 6 12 18 24 30 36 IC [A] 42 技术信息/TechnicalInformation IGBT-模块 IGBT-Module F4-75R07W2H3_B51 初步数据 PreliminaryData 开关损耗MOSFET（典型) switchinglossesMOSFET(typical) Eon=f(RG),Eoff=f(RG) VGS=±15V,ID=37.5A,VDS=400V 负温度系数热敏电阻温度特性 NTC-Thermistor-temperaturecharacteristic(typical) R=f(T) 3,0 100000 Eon, Tvj = 125°C Eoff, Tvj = 125°C Eon, Tvj = 150C Eoff, Tvj = 150C 2,7 2,4 Rtyp 2,1 10000 R[Ω] E [mJ] 1,8 1,5 1,2 1000 0,9 0,6 0,3 0,0 0,0 100 7,5 15,0 22,5 30,0 37,5 45,0 52,5 60,0 67,5 75,0 RG [Ω] preparedby:MB dateofpublication:2014-10-15 approvedby:AKDA revision:2.0 12 0 20 40 60 80 100 TC [°C] 120 140 160 技术信息/TechnicalInformation IGBT-模块 IGBT-Module F4-75R07W2H3_B51 初步数据 PreliminaryData 接线图/circuit_diagram_headline J 封装尺寸/packageoutlines Infineon preparedby:MB dateofpublication:2014-10-15 approvedby:AKDA revision:2.0 13 技术信息/TechnicalInformation IGBT-模块 IGBT-Module F4-75R07W2H3_B51 初步数据 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ShouldyouintendtousetheProductinaviationapplications,inhealthorliveendangeringorlifesupportapplications,pleasenotify.Please note,thatforanysuchapplicationsweurgentlyrecommend -toperformjointRiskandQualityAssessments; -theconclusionofQualityAgreements; -toestablishjointmeasuresofanongoingproductsurvey,andthatwemaymakedeliverydependedon therealizationofanysuchmeasures. Ifandtotheextentnecessary,pleaseforwardequivalentnoticestoyourcustomers. Changesofthisproductdatasheetarereserved. preparedby:MB dateofpublication:2014-10-15 approvedby:AKDA revision:2.0 14