技术信息/TechnicalInformation IGBT-模块 IGBT-Module DF120R12W2H3_B27 J VCES = 1200V IC nom = 40A / ICRM = 80A 典型应用 • 太阳能应用 TypicalApplications • Solarapplications 电气特性 • 高速IGBTH3 • 低开关损耗 ElectricalFeatures • HighspeedIGBTH3 • Lowswitchinglosses 机械特性 • 3kV交流1分钟绝缘 • 低热阻的三氧化二铝（Al2O3衬底 • 集成NTC温度传感器 • 紧凑型设计 • PressFIT压接技术 MechanicalFeatures • 3kVAC1mininsulation • Al2O3substratewithlowthermalresistance • IntegratedNTCtemperaturesensor • Compactdesign • PressFITcontacttechnology ModuleLabelCode BarcodeCode128 DMX-Code preparedby:CM dateofpublication:2016-04-04 approvedby:AKDA revision:V3.1 ContentoftheCode Digit ModuleSerialNumber ModuleMaterialNumber ProductionOrderNumber Datecode(ProductionYear) Datecode(ProductionWeek) 1-5 6-11 12-19 20-21 22-23 ULapproved(E83335) 1 技术信息/TechnicalInformation IGBT-模块 IGBT-Module DF120R12W2H3_B27 反极性保护二极管A/Inverse-polarityprotectiondiodeA 最大额定值/MaximumRatedValues 反向重复峰值电压 Repetitivepeakreversevoltage Tvj = 25°C VRRM 1200 V 最大正向均方根电流(每芯片) MaximumRMSforwardcurrentperchip TC = 80°C IFRMSM 50 A 最大整流器输出均方根电流 MaximumRMScurrentatrectifieroutput TC = 80°C IRMSM 60 A 正向浪涌电流 Surgeforwardcurrent tp = 10 ms, Tvj = 25°C tp = 10 ms, Tvj = 150°C IFSM 360 290 A A I2t-值 I²t-value tp = 10 ms, Tvj = 25°C tp = 10 ms, Tvj = 150°C I²t 650 420 A²s A²s 特征值/CharacteristicValues min. typ. max. 正向电压 Forwardvoltage Tvj = 150°C, IF = 30 A VF 0,95 V 反向电流 Reversecurrent Tvj = 150°C, VR = 1200 V IR 0,10 mA 结－外壳热阻 Thermalresistance,junctiontocase 每个二极管/perdiode RthJC 0,800 0,900 K/W 外壳－散热器热阻 Thermalresistance,casetoheatsink 每个二极管/perdiode λPaste=1W/(m·K)/λgrease=1W/(m·K) RthCH 0,800 在开关状态下温度 Temperatureunderswitchingconditions Tvj op -40 K/W 150 °C 反极性保护二极管B/Inverse-polarityprotectiondiodeB 最大额定值/MaximumRatedValues 反向重复峰值电压 Repetitivepeakreversevoltage Tvj = 25°C VRRM 1200 V 最大正向均方根电流(每芯片) MaximumRMSforwardcurrentperchip TC = 80°C IFRMSM 30 A 最大整流器输出均方根电流 MaximumRMScurrentatrectifieroutput TC = 80°C IRMSM 60 A 正向浪涌电流 Surgeforwardcurrent tp = 10 ms, Tvj = 25°C tp = 10 ms, Tvj = 150°C IFSM 290 245 A A I2t-值 I²t-value tp = 10 ms, Tvj = 25°C tp = 10 ms, Tvj = 150°C I²t 420 300 A²s A²s 特征值/CharacteristicValues min. typ. max. 正向电压 Forwardvoltage Tvj = 150°C, IF = 20 A VF 1,00 V 反向电流 Reversecurrent Tvj = 150°C, VR = 1200 V IR 0,10 mA 结－外壳热阻 Thermalresistance,junctiontocase 每个二极管/perdiode RthJC 1,20 1,35 K/W 外壳－散热器热阻 Thermalresistance,casetoheatsink 每个二极管/perdiode λPaste=1W/(m·K)/λgrease=1W/(m·K) RthCH 1,15 K/W 在开关状态下温度 Temperatureunderswitchingconditions Tvj op preparedby:CM dateofpublication:2016-04-04 approvedby:AKDA revision:V3.1 2 -40 150 °C 技术信息/TechnicalInformation IGBT-模块 IGBT-Module DF120R12W2H3_B27 IGBT,斩波器/IGBT-Chopper 最大额定值/MaximumRatedValues 集电极－发射极电压 Collector-emittervoltage Tvj = 25°C VCES 连续集电极直流电流 ContinuousDCcollectorcurrent TC = 75°C, Tvj max = 150°C TC = 25°C, Tvj max = 150°C IC nom IC 40 50 集电极重复峰值电流 Repetitivepeakcollectorcurrent tP = 1 ms ICRM 80 A 总功率损耗 Totalpowerdissipation TC = 25°C, Tvj max = 150°C Ptot 180 W VGES +/-20 V 栅极－发射极峰值电压 Gate-emitterpeakvoltage 特征值/CharacteristicValues 集电极－发射极饱和电压 Collector-emittersaturationvoltage min. IC = 40 A, VGE = 15 V IC = 40 A, VGE = 15 V IC = 40 A, VGE = 15 V Tvj = 25°C Tvj = 125°C Tvj = 150°C V 1200 VCE sat A A typ. max. 2,05 2,50 2,60 2,40 V V V 5,80 6,50 V 栅极阈值电压 Gatethresholdvoltage IC = 1,00 mA, VCE = VGE, Tvj = 25°C 栅极电荷 Gatecharge VGE = -15 V ... +15 V QG 0,32 µC 内部栅极电阻 Internalgateresistor Tvj = 25°C RGint 0,0 Ω 输入电容 Inputcapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cies 2,35 nF 反向传输电容 Reversetransfercapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cres 0,13 nF 集电极-发射极截止电流 Collector-emittercut-offcurrent VCE = 1200 V, VGE = 0 V, Tvj = 25°C ICES 1,0 mA 栅极-发射极漏电流 Gate-emitterleakagecurrent VCE = 0 V, VGE = 20 V, Tvj = 25°C IGES 100 nA VGEth 开通延迟时间(电感负载) Turn-ondelaytime,inductiveload IC = 40 A, VCE = 600 V VGE = ±15 V RGon = 12 Ω Tvj = 25°C Tvj = 125°C Tvj = 150°C 上升时间(电感负载) Risetime,inductiveload IC = 40 A, VCE = 600 V VGE = ±15 V RGon = 12 Ω Tvj = 25°C Tvj = 125°C Tvj = 150°C 关断延迟时间(电感负载) Turn-offdelaytime,inductiveload IC = 40 A, VCE = 600 V VGE = ±15 V RGoff = 12 Ω Tvj = 25°C Tvj = 125°C Tvj = 150°C 下降时间(电感负载) Falltime,inductiveload IC = 40 A, VCE = 600 V VGE = ±15 V RGoff = 12 Ω Tvj = 25°C Tvj = 125°C Tvj = 150°C 开通损耗能量(每脉冲) Turn-onenergylossperpulse IC = 40 A, VCE = 600 V, LS = 30 nH Tvj = 25°C VGE = ±15 V, di/dt = 1800 A/µs (Tvj = 150°C) Tvj = 125°C RGon = 12 Ω Tvj = 150°C 关断损耗能量(每脉冲） Turn-offenergylossperpulse 5,00 0,035 0,035 0,035 µs µs µs 0,02 0,025 0,025 µs µs µs 0,23 0,29 0,31 µs µs µs 0,02 0,04 0,05 µs µs µs Eon 2,00 3,10 3,50 mJ mJ mJ IC = 40 A, VCE = 600 V, LS = 30 nH Tvj = 25°C VGE = ±15 V, du/dt = 4300 V/µs (Tvj = 150°C) Tvj = 125°C RGoff = 12 Ω Tvj = 150°C Eoff 1,50 2,40 2,70 mJ mJ mJ 短路数据 SCdata VGE ≤ 15 V, VCC = 800 V VCEmax = VCES -LsCE ·di/dt ISC 130 A 结－外壳热阻 Thermalresistance,junctiontocase 每个IGBT/perIGBT RthJC 0,550 0,700 K/W 外壳－散热器热阻 Thermalresistance,casetoheatsink 每个IGBT/perIGBT λPaste=1W/(m·K)/λgrease=1W/(m·K) RthCH 0,550 在开关状态下温度 Temperatureunderswitchingconditions tP ≤ 10 µs, Tvj = 125°C td on tr td off tf Tvj op preparedby:CM dateofpublication:2016-04-04 approvedby:AKDA revision:V3.1 3 -40 K/W 150 °C 技术信息/TechnicalInformation IGBT-模块 IGBT-Module DF120R12W2H3_B27 Diode-斩波器/Diode-Chopper 最大额定值/MaximumRatedValues 反向重复峰值电压 Repetitivepeakreversevoltage VRRM Tvj = 25°C 连续正向直流电流 ContinuousDCforwardcurrent 正向重复峰值电流 Repetitivepeakforwardcurrent tP = 1 ms I2t-值 I²t-value VR = 0 V, tP = 10 ms, Tvj = 125°C 1200 V IF 25 A IFRM 30 A I²t 310 A²s 特征值/CharacteristicValues min. typ. max. 2,55 VF 2,00 1,70 1,65 Tvj = 25°C Tvj = 125°C Tvj = 150°C IRM 30,0 45,0 50,0 A A A IF = 25 A, - diF/dt = 1600 A/µs (Tvj=150°C) VR = 600 V Tvj = 25°C Tvj = 125°C Tvj = 150°C Qr 1,50 3,50 4,00 µC µC µC 反向恢复损耗（每脉冲） Reverserecoveryenergy IF = 25 A, - diF/dt = 1600 A/µs (Tvj=150°C) VR = 600 V Tvj = 25°C Tvj = 125°C Tvj = 150°C Erec 0,70 1,75 2,15 mJ mJ mJ 结－外壳热阻 Thermalresistance,junctiontocase 每个二极管/perdiode RthJC 0,700 0,750 K/W 外壳－散热器热阻 Thermalresistance,casetoheatsink 每个二极管/perdiode λPaste=1W/(m·K)/λgrease=1W/(m·K) RthCH 0,700 正向电压 Forwardvoltage IF = 25 A, VGE = 0 V IF = 25 A, VGE = 0 V IF = 25 A, VGE = 0 V Tvj = 25°C Tvj = 125°C Tvj = 150°C 反向恢复峰值电流 Peakreverserecoverycurrent IF = 25 A, - diF/dt = 1600 A/µs (Tvj=150°C) VR = 600 V 恢复电荷 Recoveredcharge 在开关状态下温度 Temperatureunderswitchingconditions Tvj op -40 V V V K/W 150 °C 负温度系数热敏电阻/NTC-Thermistor 特征值/CharacteristicValues min. typ. max. 额定电阻值 Ratedresistance TNTC = 25°C R100偏差 DeviationofR100 TNTC = 100°C, R100 = 493 Ω 耗散功率 Powerdissipation TNTC = 25°C B-值 B-value R2 = R25 exp [B25/50(1/T2 - 1/(298,15 K))] B25/50 3375 K B-值 B-value R2 = R25 exp [B25/80(1/T2 - 1/(298,15 K))] B25/80 3411 K B-值 B-value R2 = R25 exp [B25/100(1/T2 - 1/(298,15 K))] B25/100 3433 K R25 ∆R/R 5,00 -5 P25 根据应用手册标定 Specificationaccordingtothevalidapplicationnote. preparedby:CM dateofpublication:2016-04-04 approvedby:AKDA revision:V3.1 4 kΩ 5 % 20,0 mW 技术信息/TechnicalInformation IGBT-模块 IGBT-Module DF120R12W2H3_B27 模块/Module 绝缘测试电压 Isolationtestvoltage RMS, f = 50 Hz, t = 1 min. 内部绝缘 Internalisolation 基本绝缘(class1,IEC61140) basicinsulation(class1,IEC61140) Al2O3 爬电距离 Creepagedistance 端子至散热器/terminaltoheatsink 端子至端子/terminaltoterminal 11,5 6,3 mm 电气间隙 Clearance 端子至散热器/terminaltoheatsink 端子至端子/terminaltoterminal 10,0 5,0 mm > 200 相对电痕指数 Comperativetrackingindex VISOL CTI min. 杂散电感,模块 Strayinductancemodule LsCE 储存温度 Storagetemperature Tstg -40 Anpresskraft für mech. Bef. pro Feder mountig force per clamp F 40 重量 Weight G Der Strom im Dauerbetrieb ist auf 25A effektiv pro Anschlusspin begrenzt. The current under continuous operation is limited to 25A rms per connector pin. preparedby:CM dateofpublication:2016-04-04 approvedby:AKDA revision:V3.1 5 kV 3,0 typ. max. 25 36 nH 125 °C 80 N g 技术信息/TechnicalInformation IGBT-模块 IGBT-Module DF120R12W2H3_B27 正向偏压特性反极性保护二极管A（典型) forwardcharacteristicofInverse-polarityprotectiondiodeA (typical) IF=f(VF) 正向偏压特性反极性保护二极管B（典型) forwardcharacteristicofInverse-polarityprotectiondiodeB (typical) IF=f(VF) 60 40 Tvj = 25°C Tvj = 150°C Tvj = 25°C Tvj = 150°C 35 50 30 40 IF [A] IF [A] 25 30 20 15 20 10 10 5 0 0,0 0,2 0,4 0,6 0,8 VF [V] 1,0 1,2 0 1,4 输出特性IGBT,斩波器（典型) outputcharacteristicIGBT-Chopper(typical) IC=f(VCE) VGE=15V 0,4 0,6 0,8 VF [V] 1,0 1,2 1,4 80 Tvj = 25°C Tvj = 125°C Tvj = 150°C 70 60 60 50 50 40 40 30 30 20 20 10 10 0,0 0,5 1,0 VGE = 19V VGE = 17V VGE = 15V VGE = 13V VGE = 11V VGE = 9V 70 IC [A] IC [A] 0,2 输出特性IGBT,斩波器（典型) outputcharacteristicIGBT-Chopper(typical) IC=f(VCE) Tvj=150°C 80 0 0,0 1,5 2,0 2,5 VCE [V] 3,0 3,5 0 4,0 preparedby:CM dateofpublication:2016-04-04 approvedby:AKDA revision:V3.1 6 0,0 0,5 1,0 1,5 2,0 2,5 3,0 VCE [V] 3,5 4,0 4,5 5,0 技术信息/TechnicalInformation IGBT-模块 IGBT-Module DF120R12W2H3_B27 传输特性IGBT,斩波器(典型) transfercharacteristicIGBT-Chopper(typical) IC=f(VGE) VCE=20V 开关损耗IGBT,斩波器（典型) switchinglossesIGBT-Chopper(typical) Eon=f(IC),Eoff=f(IC) VGE=±15V,RGon=12Ω,RGoff=12Ω,VCE=600V 80 8,0 Tvj = 25°C Tvj = 125°C Tvj = 150°C 7,0 60 6,0 50 5,0 E [mJ] IC [A] 70 40 3,0 20 2,0 10 1,0 5 6 7 8 9 VGE [V] 10 11 0,0 12 开关损耗IGBT,斩波器（典型) switchinglossesIGBT-Chopper(typical) Eon=f(RG),Eoff=f(RG) VGE=±15V,IC=40A,VCE=600V 0 8 16 24 40 48 IC [V] 56 64 72 80 10 Eon, Tvj = 125°C Eoff, Tvj = 125°C Eon, Tvj = 150°C Eoff, Tvj = 150°C 10,0 ZthJH : IGBT 1 ZthJH [K/W] 8,0 6,0 4,0 0,1 2,0 0,0 32 瞬态热阻抗IGBT,斩波器 transientthermalimpedanceIGBT-Chopper ZthJH=f(t) 12,0 E [mJ] 4,0 30 0 Eon, Tvj = 125°C Eoff, Tvj = 125°C Eon, Tvj = 150°C Eoff, Tvj = 150°C i: 1 2 3 4 ri[K/W]: 0,051 0,117 0,426 0,506 τi[s]: 0,0005 0,005 0,05 0,2 0 10 20 30 40 50 60 RG [Ω] 70 80 90 0,01 0,001 100 preparedby:CM dateofpublication:2016-04-04 approvedby:AKDA revision:V3.1 7 0,01 0,1 t [s] 1 10 技术信息/TechnicalInformation IGBT-模块 IGBT-Module DF120R12W2H3_B27 反偏安全工作区IGBT,斩波器（RBSOA） reversebiassafeoperatingareaIGBT-Chopper(RBSOA) IC=f(VCE) VGE=±15V,RGoff=12Ω,Tvj=150°C 正向偏压特性Diode-斩波器（典型) forwardcharacteristicofDiode-Chopper(typical) IF=f(VF) 100 50 IC, Modul IC, Chip 80 40 70 35 60 30 50 25 40 20 30 15 20 10 10 5 0 0 200 Tvj = 25°C Tvj = 125°C Tvj = 150°C 45 IF [A] IC [A] 90 400 600 800 1000 1200 0 1400 0,0 0,5 1,0 t [s] 开关损耗Diode-斩波器（典型) switchinglossesDiode-Chopper(typical) Erec=f(IF) RGon=12Ω,VCE=600V 2,5 3,0 80 100 120 3,00 Erec, Tvj = 125°C Erec, Tvj = 150°C Erec, Tvj = 125°C Erec, Tvj = 150°C 2,50 2,50 2,00 2,00 E [mJ] E [mJ] 2,0 开关损耗Diode-斩波器（典型) switchinglossesDiode-Chopper(typical) Erec=f(RG) IF=25A,VCE=600V 3,00 1,50 1,50 1,00 1,00 0,50 0,50 0,00 1,5 VF [V] 0 5 10 15 20 25 30 IF [A] 35 40 45 0,00 50 preparedby:CM dateofpublication:2016-04-04 approvedby:AKDA revision:V3.1 8 0 20 40 60 RG [Ω] 技术信息/TechnicalInformation IGBT-模块 IGBT-Module DF120R12W2H3_B27 瞬态热阻抗Diode-斩波器 transientthermalimpedanceDiode-Chopper ZthJH=f(t) 负温度系数热敏电阻温度特性 NTC-Thermistor-temperaturecharacteristic(typical) R=f(T) 10 100000 ZthJH : Diode Rtyp R[Ω] ZthJH [K/W] 10000 1 1000 i: 1 2 3 4 ri[K/W]: 0,097 0,219 0,576 0,508 τi[s]: 0,0005 0,005 0,05 0,2 0,1 0,001 0,01 0,1 t [s] 1 100 10 preparedby:CM dateofpublication:2016-04-04 approvedby:AKDA revision:V3.1 9 0 20 40 60 80 100 TNTC [°C] 120 140 160 技术信息/TechnicalInformation IGBT-模块 IGBT-Module DF120R12W2H3_B27 接线图/Circuitdiagram J 封装尺寸/Packageoutlines Infineon preparedby:CM dateofpublication:2016-04-04 approvedby:AKDA revision:V3.1 10 技术信息/TechnicalInformation IGBT-模块 IGBT-Module DF120R12W2H3_B27 Publishedby InfineonTechnologiesAG 81726München,Germany ©InfineonTechnologiesAG2015. 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ExceptasotherwiseexplicitlyapprovedbyInfineonTechnologiesinawrittendocumentsignedbyauthorizedrepresentativesofInfineon Technologies,InfineonTechnologies’productsmaynotbeusedinanyapplicationswhereafailureoftheproductoranyconsequencesof theusethereofcan reasonablybeexpectedtoresultinpersonalinjury. preparedby:CM dateofpublication:2016-04-04 approvedby:AKDA revision:V3.1 11