Transistor 2SD1821, 2SD1821A Silicon NPN epitaxial planer type For high breakdown voltage low-frequency and low-noise amplification Unit: mm ■ Features 0.425 +0.1 1.25±0.1 0.3–0 0.65 1.3±0.1 ● 0.425 1 0.65 ● 2.1±0.1 High collector to emitter voltage VCEO. Low noise voltage NV. S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 2.0±0.2 ● 3 2 Collector to 2SD1821 VCBO 185 150 VCEO emitter voltage 2SD1821A Emitter to base voltage VEBO Peak collector current 185 Unit V V 5 V ICP 100 mA Collector current IC 50 mA Collector power dissipation PC 150 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C ■ Electrical Characteristics +0.1 2SD1821A 150 0.15–0.05 base voltage Ratings 0 to 0.1 2SD1821 0.2 Symbol Collector to 0.7±0.1 Parameter (Ta=25˚C) 0.9±0.1 ■ Absolute Maximum Ratings 1:Base 2:Emitter 3:Collector 0.2±0.1 EIAJ:SC–70 S–Mini Type Package Marking symbol : P(2SD1821) L(2SD1821A) (Ta=25˚C) Parameter Symbol Conditions min typ max Unit 1 µA ICBO VCB = 100V, IE = 0 VCEO IC = 100µA, IB = 0 Emitter to base voltage VEBO IE = 10µA, IC = 0 Forward current transfer ratio hFE* VCE = 5V, IC = 10mA Collector to emitter saturation voltage VCE(sat) IC = 30mA, IB = 3mA Transition frequency fT VCB = 10V, IE = –10mA, f = 200MHz 150 MHz Collector output capacitance Cob VCB = 10V, IE = 0, f = 1MHz 2.3 pF 150 mV Collector cutoff current Collector to emitter 2SD1821 voltage 2SD1821A Noise voltage *h FE VCE = 10V, IC = 1mA, GV = 80dB NV Rg = 100kΩ, Function = FLAT 150 V 185 5 V 130 330 1 V Rank classification Marking Symbol Rank R S hFE 130 ~ 220 185 ~ 330 2SD1821 PR PS 2SD1821A LR LS 1 2SD1821, 2SD1821A Transistor PC — Ta IC — VCE 120 100 160 120 80 40 80 60 0.4mA 40 0.2mA 20 60 80 100 120 140 160 Ambient temperature Ta (˚C) 2 10 3 1 Ta=75˚C 25˚C –25˚C 0.03 0.01 0.1 0.3 1 3 10 30 100 Collector current IC (mA) Cob — VCB IE=0 f=1MHz Ta=25˚C 4 3 2 1 0 3 10 6 8 10 12 14 16 0 0.4 30 100 Collector to base voltage VCB (V) 0.8 1.2 200 500 400 Ta=75˚C 25˚C –25˚C 200 100 0 0.1 0.3 1 3 2.0 VCB=10V Ta=25˚C VCE=10V 300 1.6 Base to emitter voltage VBE (V) fT — I E 10 30 Collector current IC (mA) 5 1 4 600 Forward current transfer ratio hFE Collector to emitter saturation voltage VCE(sat) (V) 30 0.1 40 hFE — IC IC/IB=10 0.3 60 Collector to emitter voltage VCE (V) VCE(sat) — IC 100 –25˚C 0 0 Transition frequency fT (MHz) 40 Ta=75˚C 80 20 0 20 25˚C 100 IB=2.0mA 1.8mA 1.6mA 1.4mA 1.2mA 1.0mA 0.8mA 0.6mA Collector current IC (mA) 200 0 Collector output capacitance Cob (pF) VCE=10V Ta=25˚C 0 2 IC — VBE 120 Collector current IC (mA) Collector power dissipation PC (mW) 240 100 160 120 80 40 0 –1 –3 –10 –30 Emitter current IE (mA) –100