Transistor 2SB709A Silicon PNP epitaxial planer type For general amplification Complementary to 2SD601A Unit: mm +0.2 2.8 –0.3 1.45 +0.1 +0.2 0.95 0.95 2.9 –0.05 1.9±0.2 3 2 Collector to base voltage VCBO –45 V Collector to emitter voltage VCEO –45 V Emitter to base voltage VEBO –7 V Peak collector current ICP –200 mA Collector current IC –100 mA Collector power dissipation PC 200 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C +0.1 Unit 0.16 –0.06 Ratings 0.1 to 0.3 0.4±0.2 1:Base 2:Emitter 3:Collector 0 to 0.1 Symbol JEDEC:TO–236 EIAJ:SC–59 Mini Type Package (Ta=25˚C) Parameter Symbol ICBO Collector cutoff current 1 (Ta=25˚C) Parameter ■ Electrical Characteristics 0.65±0.15 0.8 ■ Absolute Maximum Ratings +0.2 ● 0.65±0.15 High foward current transfer ratio hFE. Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 1.1 –0.1 ● 0.4 –0.05 ■ Features +0.25 1.5 –0.05 Conditions min typ VCB = –20V, IE = 0 max Unit – 0.1 µA –100 µA ICEO VCE = –10V, IB = 0 Collector to base voltage VCBO IC = –10µA, IE = 0 –45 V Collector to emitter voltage VCEO IC = –2mA, IB = 0 –45 V Emitter to base voltage VEBO IE = –10µA, IC = 0 –7 V VCE = –10V, IC = –2mA 160 * Forward current transfer ratio hFE Collector to emitter saturation voltage VCE(sat) IC = –100mA, IB = –10mA Transition frequency fT VCB = –10V, IE = 1mA, f = 200MHz 80 MHz Collector output capacitance Cob VCB = –10V, IE = 0, f = 1MHz 2.7 pF *1h FE 460 – 0.3 – 0.5 V Rank classification Rank Q R S hFE 160 ~ 260 210 ~ 340 290 ~ 460 Marking Symbol BQ BR BS 1 2SB709A Transistor PC — Ta IC — VCE IC — I B –120 –60 Ta=25˚C –100 160 120 80 40 –50 –80 IB=–300µA –60 –250µA –200µA –40 –150µA –100µA –20 –30 –20 –10 0 20 40 60 80 100 120 140 160 0 0 Ambient temperature Ta (˚C) –2 –4 –6 –8 –10 –12 0 Collector to emitter voltage VCE (V) IB — VBE –150 IC — VBE –400 VCE=–5V –350 25˚C Collector current IC (mA) –200 Base current IB (µA) –300 Ta=75˚C –25˚C –160 –250 –150 –100 –10 IC/IB=10 –3 –1 Ta=75˚C – 0.3 –120 –200 –450 VCE(sat) — IC –240 VCE=–5V Ta=25˚C –300 Base current IB (µA) Collector to emitter saturation voltage VCE(sat) (V) 0 25˚C – 0.1 –25˚C – 0.03 –80 – 0.01 –40 –50 – 0.003 0 0 0 – 0.6 –1.2 –1.8 0 Base to emitter voltage VBE (V) – 0.4 hFE — IC –1.2 –1.6 –2.0 25˚C –25˚C 200 100 140 120 100 80 60 40 20 –3 –10 –30 –100 –300 –1000 Collector current IC (mA) –30 –100 –300 –1000 Cob — VCB Collector output capacitance Cob (pF) Ta=75˚C –10 8 VCB=–10V Ta=25˚C Transition frequency fT (MHz) 400 –3 Collector current IC (mA) fT — I E 500 0 –1 – 0.001 –1 160 VCE=–10V 300 – 0.8 Base to emitter voltage VBE (V) 600 Forward current transfer ratio hFE –40 –50µA 0 2 VCE=–5V Ta=25˚C Collector current IC (mA) 200 Collector current IC (mA) Collector power dissipation PC (mW) 240 0 0.1 0.3 1 3 10 30 Emitter current IE (mA) 100 IE=0 f=1MHz Ta=25˚C 7 6 5 4 3 2 1 0 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) 2SB709A Transistor NF — IE NF — IE 6 20 VCB=–5V f=1kHz Rg=2kΩ Ta=25˚C VCB=–5V Rg=50kΩ Ta=25˚C 300 hfe 16 4 3 2 100 14 12 h Parameter Noise figure NF (dB) Noise figure NF (dB) 5 18 h Parameter — IE f=100Hz 10 1kHz 8 10 10kHz 6 4 1 hoe (µS) 30 hie (kΩ) 3 VCE=–5V f=270Hz Ta=25˚C 2 0 0.01 0.03 0.1 0.3 1 3 10 Emitter current IE (mA) 0 0.1 0.3 1 3 Emitter current IE (mA) 10 1 0.1 hre 0.3 (✕10–4) 1 3 10 Emitter current IE (mA) h Parameter — VCE 300 hfe IE=2mA f=270Hz Ta=25˚C h Parameter 100 30 hoe (µS) 10 3 1 –1 hre (✕10–4) hie (kΩ) –3 –10 –30 –100 Collector to emitter voltage VCE (V) 3