HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS 20A, 350V N-Channel, Logic Level, Voltage Clamping IGBTs April 1995 Features Packages JEDEC TO-220AB • Logic Level Gate Drive COLLECTOR EMITTER • Internal Voltage Clamp GATE COLLECTOR (FLANGE) • ESD Gate Protection • TJ = 175oC • Ignition Energy Capable JEDEC TO-262AA Description EMITTER This N-Channel IGBT is a MOS gated, logic level device which is intended to be used as an ignition coil driver in automotive ignition circuits. Unique features include an active voltage clamp between the collector and the gate which provides Self Clamped Inductive Switching (SCIS) capability in ignition circuits. Internal diodes provide ESD protection for the logic level gate. Both a series resistor and a shunt resistor are provided in the gate circuit. COLLECTOR GATE A COLLECTOR (FLANGE) JEDEC TO-263AB M COLLECTOR (FLANGE) A A PACKAGING AVAILABILITY PART NUMBER PACKAGE HGTP20N35G3VL T0-220AB 20N35GVL HGT1S20N35G3VL T0-262AA 20N35GVL HGT1S20N35G3VLS T0-263AB 20N35GVL GATE EMITTER BRAND Terminal Diagram NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in the tape and reel, i.e., HGT1S20N35G3VLS9A. N-CHANNEL ENHANCEMENT MODE COLLECTOR The development type number for this device is TA49076. R1 GATE R2 EMITTER Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified Collector-Emitter Bkdn Voltage At 10mA, RGE = 1kΩ. . . . . . . . . . . . . . . . . . . . . . . BVCER Emitter-Collector Bkdn Voltage At 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVECS Collector Current Continuous At VGE = 5.0V, TC = +25oC, Figure 7 . . . . . . . . . . . . . IC25 At VGE = 5.0V, TC = +100oC . . . . . . . . . . . . . . . . . . . .IC100 Gate-Emitter-Voltage (Note) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES Inductive Switching Current At L = 2.3mH, TC = +25o C . . . . . . . . . . . . . . . . . . . . . ISCIS At L = 2.3mH, TC = +175oC . . . . . . . . . . . . . . . . . . . . . ISCIS Collector to Emitter Avalanche Energy At L = 2.3mH, TC = +25oC . . . . . . . . . . . . . . EAS Power Dissipation Total At TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > +25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . .TJ, TSTG Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL Electrostatic Voltage at 100pF, 1500Ω . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ESD HGTP20N35G3VL HGT1S20N35G3VL HGT1S20N35G3VLS 375 24 20 20 ±10 26 18 775 150 1.0 -40 to +175 260 6 UNITS V V A A V A A mJ W W/oC oC oC KV NOTE: May be exceeded if IGEM is limited to 10mA. CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999 3-66 File Number 4006 Specifications HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS Electrical Specifications TC = +25oC, Unless Otherwise Specified LIMITS PARAMETERS Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage SYMBOL BVCES BVCER TEST CONDITIONS IC = 10mA, VGE = 0V IC = 10mA VGE = 0V RGE = 1kΩ MIN TYP MAX UNITS TC = +175oC 310 345 380 V TC = +25oC 320 350 380 V TC = -40oC 320 355 390 V TC = +175oC 300 340 375 V TC = +25oC 315 345 375 V TC = -40oC 315 350 390 V Gate-Emitter Plateau Voltage VGEP IC = 10A VCE = 12V TC = +25oC - 3.7 - V Gate Charge QG(ON) IC = 10A VGE = 5V VCE = 12V TC = +25oC - 28.7 - nC Collector-Emitter Clamp Bkdn. Voltage BVCE(CL) IC = 10A RG = 0Ω TC = +175oC 325 360 395 V IC = 10mA TC = +25oC 20 32 - V VCE = 250V TC = +25oC - - 5 µA VCE = 250V TC = +175oC - - 250 µA IC = 10A VGE = 4.5V TC = +25oC - 1.3 1.6 V TC = +175oC - 1.25 1.5 V TC = +25oC - 1.6 2.8 V TC = +175oC - 1.9 3.5 V TC = +25oC 1.3 1.8 2.3 V Emitter-Collector Breakdown Voltage Collector-Emitter Leakage Current Collector-Emitter Saturation Voltage BVECS ICES VCE(SAT) IC = 20A VGE = 5.0V Gate-Emitter Threshold Voltage VGE(TH) IC = 1mA VCE = VGE Gate Series Resistance R1 TC = +25oC - 1.0 - kΩ Gate-Emitter Resistance R2 TC = +25oC 10 17 25 kΩ Gate-Emitter Leakage Current Gate-Emitter Breakdown Voltage Current Turn-Off Time-Inductive Load Inductive Use Test Thermal Resistance IGES VGE = ±10V ±400 ±590 ±1000 µA BVGES IGES = ±2mA ±12 ±14 - V - 15 30 µs TC = +175oC 18 - - A TC = +25oC 26 - - A - - 1.0 oC/W tD(OFF)I + tF(OFF)I ISCIS IC = 10A, RG = 25Ω, L = 550 H, R L = 26.4Ω, VGE = 5V, VCL = 300V, TC = +175oC L = 2.3mH, VG = 5V, RG = 0Ω RθJC 3-67 HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS Typical Performance Curves PULSE DURATION = 250µs, DUTY CYCLE <0.5%, TC = +25oC 100 50 ICE, COLLECTOR-EMITTER CURRENT (A) ICE, COLLECTOR-EMITTER CURRENT (A) PULSE DURATION = 250µs, DUTY CYCLE <0.5%, VCE = 10V 40 30 TC = +175oC TC = +25oC 20 TC = -40oC 10 0 1 3 2 4 5 VGE=10V 5.0V 60 4.5V 40 4.0V 3.5V 20 3.0V 2.5V 0 6 ICE , COLLECTOR EMITTER CURRENT (A) ICE , COLLECTOR EMITTER CURRENT (A) 20 VGE = 4.0V 10 0 10 -40oC VGE = 4.5V +25oC 40 +175oC 30 20 10 0 1 3 2 5 4 VCE(SAT) , SATURATION VOLTAGE (V) FIGURE 4. COLLECTOR-EMITTER CURRENT AS A FUNCTION OF SATURATION VOLTAGE 2.2 ICE = 10A VCE(SAT) , SATURATION VOLTAGE (V) VCE(SAT) , SATURATION VOLTAGE (V) 8 50 0 4 FIGURE 3. COLLECTOR-EMITTER CURRENT AS A FUNCTION OF SATURATION VOLTAGE 1.4 6 FIGURE 2. SATURATION CHARACTERISTICS VGE = 4.5V 2 3 VCE(SAT) , SATURATION VOLTAGE (V) 4 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) VGE = 5.0V 1 2 0 TC = +175oC 0 6.0V 5.5V FIGURE 1. TRANSFER CHARACTERISTICS 30 6.5V 80 VGE, GATE-TO-EMITTER VOLTAGE (V) 40 7V VGE = 4.0V 1.3 VGE = 4.5V 1.2 VGE = 5.0V 1.1 ICE = 20A 2.1 VGE = 4.0V 2.0 1.9 VGE = 4.5V 1.8 1.7 4.5V VGE = 5.0V 1.6 1.5 -25 +25 +75 +125 +175 -25 +25 +75 +125 +175 TJ , JUNCTION TEMPERATURE (oC) TJ , JUNCTION TEMPERATURE (oC) FIGURE 5. SATURATION VOLTAGE AS A FUNCTION OF JUNCTION TEMPERATURE FIGURE 6. SATURATION VOLTAGE AS A FUNCTION OF JUNCTION TEMPERATURE 3-68 HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS Typical Performance Curves (Continued) VGE = 5.0V 20 PACKAGE LIMITED 15 10 5 0 +25 +50 +75 +125 +100 +150 1.2 VTH, NORMAILZED THRESHOLD VOLTAGE ICE, COLLECTOR-EMITTER CURRENT (A) 25 ICE = 1mA 1.1 1.0 0.9 0.8 0.7 0.6 0.5 +175 +125 +175 FIGURE 8. NORMALIZED THRESHOLD VOLTAGE AS A FUNCTION OF JUNCTION TEMPERATURE 18 105 VCL= 300V, RGE = 25Ω, VGE = 5V, L= 550 H 104 VECS = 20V t(OFF)I, TURN OFF TIME ( s) LEAKAGE CURRENT ( A) +75 TJ , JUNCTION TEMPERATURE (oC) FIGURE 7. COLLECTOR-EMITTER CURRENT AS A FUNCTION OF CASE TEMPERATURE 103 102 101 VCES = 250V 100 10-1 16 ICE = 6A, RL= 50Ω 14 ICE =10A, RL= 30Ω 12 ICE =15A, RL= 20Ω 10 +25 +75 +50 +100 +125 +150 +175 +25 TJ , JUNCTION TEMPERATURE (oC) 45 +50 +100 +75 +125 +150 FIGURE 10. TURN-OFF TIME AS A FUNCTION OF JUNCTION TEMPERATURE 1200 VGE = 5V VGE = 5V 40 1000 EAS , ENERGY (mJ) +25oC 35 +175 TJ , JUNCTION TEMPERATURE (oC) FIGURE 9. LEAKAGE CURRENT AS A FUNCTION OF JUNCTION TEMPERATURE ICE , COLLECTOR-EMITTER CURRENT (A) +25 -25 TC, CASE TEMPERATURE (oC) 30 25 20 +25oC 800 600 15 +175oC +175oC 400 10 5 0 2 4 6 8 200 10 0 FIGURE 11. SELF CLAMPED INDUCTIVE SWITCHING CURRENT AS A FUNCTION OF INDUCTANCE 2 4 6 8 INDUCTANCE (mH) INDUCTANCE (mH) FIGURE 12. SELF CLAMPED INDUCTIVELY SWITCHING ENERGY AS A FUNCTION OF INDUCTANCE 3-69 10 HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS Typical Performance Curves (Continued) IG REF = 1.022mA, RL = 1.2Ω, TC = +25oC C, CAPACITANCE (pF) 1400 1200 CIES 800 600 COES 400 200 CRES 5 10 5 VCE = 12V 8 4 6 4 2 2 1 0 0 0 20 10 FIGURE 14. GATE CHARGE WAVEFORMS 100 350 ICER = 10mA BVCER , COLLECTOR-EMITTER BKDN VOLTAGE (V) 0.5 t1 0.2 PD 10-1 40 30 QG, GATE CHARGE (nC) FIGURE 13. CAPACITANCE AS A FUNCTION OF COLLECTOREMITTER VOLTAGE ZθJC , NORMALIZED THERMAL RESPONSE 3 VCE = 8V VCE = 4V 25 20 10 15 VCE , COLLECTOR-TO-EMITTER VOLTAGE (V) 0 6 VGE, GATE-EMITTER VOLTAGE (V) FREQUENCY = 1MHz 1000 12 VCE, COLLECTOR-EMITTER VOLTAGE (V) 1600 0.1 t2 0.05 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZθJC X RθJC) + TC 0.02 0.01 10-2 345 TC = +25oC AND +175oC 340 SINGLE PULSE 335 10-5 10-3 10-1 0 101 2000 4000 6000 8000 10000 RGE , GATE-TO-EMITTER RESISTANCE (V) t1 , RECTANGULAR PULSE DURATION (s) FIGURE 16. BREAKDOWN VOLTAGE AS A FUNCTION OF GATE - EMITTER RESISTANCE FIGURE 15. NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE Test Circuits RL 2.3mH VDD L = 550µH C C RGEN = 25Ω 1/RG = 1/RGEN + 1/RGE RG RGEN = 50Ω DUT 5V G DUT G + - 10V VCC 300V RGE = 50Ω E E FIGURE 17. USE TEST CIRCUIT FIGURE 18. INDUCTIVE SWITCHING TEST CIRCUIT 3-70 HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. 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