HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D, HGTP10N50E1D 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes April 1995 Features Package • 10A, 400V and 500V JEDEC TO-220AB • VCE(ON): 2.5V Max. EMITTER COLLECTOR GATE • TFALL: 1µs, 0.5µs • Low On-State Voltage COLLECTOR (FLANGE) • Fast Switching Speeds • High Input Impedance • Anti-Parallel Diode Applications • Power Supplies Terminal Diagram • Motor Drives N-CHANNEL ENHANCEMENT MODE • Protective Circuits C Description The HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D, and HGTP10N50E1D are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high voltage, low on-dissipation applications such as switching regulators and motor drivers. They feature a discrete anti-parallel diode that shunts current around the IGBT in the reverse direction without introducing carriers into the depletion region. These types can be operated directly from low power integrated circuits. G E PACKAGING AVAILABILITY PART NUMBER PACKAGE BRAND HGTP10N40C1D TO-220AB 10N40C1D HGTP10N40E1D TO-220AB 10N40E1D HGTP10N50C1D TO-220AB 10N50C1D HGTP10N50E1D TO-220AB 10N50E1D NOTE: When ordering, use the entire part number. Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VCES Collector-Gate Voltage RGE = 1MΩ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VCGR Gate-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGE Collector Current Continuous at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . IC25 at TC = +90oC . . . . . . . . . . . . . . . . . . . . . . . . . IC90 Power Dissipation Total at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . TJ, TSTG HGTP10N40C1D HGTP10N40E1D 400 400 ±20 17.5 10 75 0.6 -55 to +150 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 3-20 HGTP10N50C1D HGTP10N50E1D 500 500 ±20 17.5 10 75 0.6 -55 to +150 File Number UNITS V V V A W W/oC oC 2405.5 Specifications HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D, HGTP10N50E1D Electrical Specifications TC = +25oC, Unless Otherwise Specified LIMITS HGTP10N40C1D, HGTP10N40E1D PARAMETERS SYMBOL TEST CONDITIONS HGTP10N50C1D, HGTP10N50E1D MIN MAX MIN MAX UNITS Collector-Emitter Breakdown Voltage BVCES IC = 1mA, VGE = 0 400 - 500 - V Gate Threshold Voltage VGE(TH) VGE = VCE, IC = 1mA 2.0 4.5 2.0 4.5 V VCE = 400V, TC = +25oC - 250 - - µA VCE = 500V, TC = +25oC - - - 250 µA VCE = 400V, TC = +125oC - 1000 - - µA VCE = 500V, TC = +125oC - - - 1000 µA IGES VGE = ±20V, VCE = 0 - 100 - 100 nA VCE(ON) IC = 10A, VGE = 10V - 2.5 - 2.5 V IC = 17.5A, VGE = 20V - 3.2 - 3.2 V VGEP IC = 5A, VCE = 10V - 6 (Typ) - 6 (Typ) V On-State Gate Charge QG(ON) IC = 5A, VCE = 10V - 19 (Typ) - 19 (Typ) nC Turn-On Delay Time tD(ON)I IC = 10A, VCE(CLP) = 300V, L = 50µH, TJ = +100oC, VGE = 10V, RG = 50Ω - 50 - 50 ns - 50 - 50 ns - 400 - 400 ns 40E1D, 50E1D 680 (Typ) 1000 680 (Typ) 1000 ns 40C1D, 50C1D 400 (Typ) 500 400 (Typ) 500 ns Zero Gate Voltage Collector Current Gate-Emitter Leakage Current Collector-Emitter On Voltage Gate-Emitter Plateau Voltage Rise Time ICES tRI Turn-Off Delay Time tD(OFF)I Fall Time tFI Turn-Off Energy Loss per Cycle (Off Switching Dissipation = WOFF x Frequency) WOFF IC = 10A, VCE(CLP) = 300V, L = 50µH, TJ = +100oC, VGE = 10V, RG = 50Ω 40E1D, 50E1D 1810 (Typ) µJ 40C1D, 50C1D 1070 (Typ) µJ Thermal Resistance Junction-to-Case RθJC Diode Forward Voltage VEC Diode Reverse Recovery Time tRR - 1.67 - 1.67 oC/W IEC = 10A - 2 - 2 V IEC = 10A, di/dt = 100A/µs - 100 - 100 ns INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS: 4,364,073 4,587,713 4,641,162 4,794,432 4,860,080 4,969,027 4,417,385 4,598,461 4,644,637 4,801,986 4,883,767 4,430,792 4,605,948 4,682,195 4,803,533 4,888,627 4,443,931 4,618,872 4,684,413 4,809,045 4,890,143 4,466,176 4,620,211 4,694,313 4,809,047 4,901,127 3-21 4,516,143 4,631,564 4,717,679 4,810,665 4,904,609 4,532,534 4,639,754 4,743,952 4,823,176 4,933,740 4,567,641 4,639,762 4,783,690 4,837,606 4,963,951 HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D, HGTP10N50E1D Typical Performance Curves 20.0 VGE = 10V, RGEN = RGS = 100Ω RATED POWER DISSIPATION (%) ICE, COLLECTOR CURRENT (A) 17.5 15.0 12.5 10.0 7.5 5.0 2.5 0 -75 -50 -25 0 +25 100 80 60 40 20 +50 +75 +100 +125 +150 +175 0 +25 +50 TJ , JUNCTION TEMPERATURE (oC) +100 +125 +150 FIGURE 2. POWER DISSIPATION vs TEMPERATURE DERATING CURVE 35 PULSE TEST, VCE = 10V PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX. VGE = VCE, IC = 1mA 1.3 ICE, COLLECTOR CURRENT (A) NORMALIZED GATE THRESHOLD VOLTAGE FIGURE 1. MAX. SWITCHING CURRENT LEVEL. RG = 50Ω, VGE = 0V ARE THE MIN. ALLOWABLE VALUES 1.2 1.1 1.0 0.9 0.8 0.7 30 25 20 15 10 -40oC +25oC 5 +125oC -50 0 +50 +100 TJ , JUNCTION TEMPERATURE 0 +150 0 ICE, COLLECTOR CURRENT (A) VGE = 6V 25 20 15 VGE = 5V 10 5 10.0 35 PULSE TEST, VGE = 10V PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX. VGE = 7V VGE = 10V VGE = 8V 7.5 FIGURE 4. TYPICAL TRANSFER CHARACTERISTICS TC = +25oC 30 5.0 VGE, GATE-TO-EMITTER VOLTAGE (V) 35 VGE = 20V 2.5 (oC) FIGURE 3. TYPICAL NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE ICE, COLLECTOR CURRENT (A) +75 TC , CASE TEMPERATURE (oC) VGE = 4V 30 25 20 +25oC 15 10 5 0 0 0 1 2 3 4 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) 0 5 1 2 3 4 VCE(ON), COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 5. TYPICAL SATURATION CHARACTERISTICS FIGURE 6. TYPICAL COLLECTOR-TO-EMITTER ON-VOLTAGE vs COLLECTOR CURRENT 3-22 HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D, HGTP10N50E1D VCE(ON), COLLECTOR-EMITTER ON VOLTAGE (V) Typical Performance Curves (Continued) 1200 f = 0.1MHz C, CAPACITANCE (pF) 1000 800 CISS 600 400 200 COSS CRSS 0 0 10 20 30 40 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) 50 3.00 2.75 IC = 10A, VGE = 10V 2.50 IC = 10A, VGE = 15V 2.25 2.00 IC = 5A, VGE = 10V 1.75 IC = 5A, VGE = 15V 1.50 +25 +50 +75 FIGURE 7. CAPACITANCE vs COLLECTOR-TO-EMITTER VOLTAGE TD(OFF)I, TURN OFF DELAY TIME (ns) +125 +150 FIGURE 8. TYPICAL VCE(ON) vs TEMPERATURE 400 WOFF = ∫ IC * VCEdt IC = 20A, VGE = 10V, VCL = 300V L =25µH, RG = 25Ω VGE IC 300 VCE 200 100 0 +25 +50 +75 +100 +125 TJ, JUNCTION TEMPERATURE (oC) +150 FIGURE 9. TYPICAL TURN-OFF DELAY TIME FIGURE 10. TYPICAL INDUCTIVE SWITCHING WAVEFORMS 800 800 IC = 5A, VGE = 10V, VCL = 300V L = 50µH, RG = 50Ω 700 700 600 IC = 10A, VGE = 10V, VCL = 300V L = 50µH, RG = 50Ω 600 40E1/50E1 tFI , FALL TIME (ns) tFI , FALL TIME (ns) +100 TJ, JUNCTION TEMPERATURE (oC) 500 400 40C1/50C1 300 400 40C1/50C1 300 200 200 100 100 0 +25 +50 +75 +100 +125 40E1/50E1 500 0 +25 +150 +50 +75 +100 +125 TJ, JUNCTION TEMPERATURE (oC) TJ, JUNCTION TEMPERATURE (oC) FIGURE 11. TYPICAL FALL TIME (IC = 5A) FIGURE 12. TYPICAL FALL TIME (IC = 10A) 3-23 +150 HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D, HGTP10N50E1D Typical Performance Curves (Continued) L = 25µH, RG = 25Ω VCE, COLLECTOR-EMITTER VOLTAGE (V) WOFF , TURN-OFF ENERGY LOSS (µJ) 900 20A, 40E1/50E1 800 700 600 20A, 40C1/50C1 500 400 10A, 40E1/50E1 300 200 10A, 40C1/50C1 100 0 +25 10 500 VGE = 10V, VCE(CLP) = 300V RL = 25Ω IG(REF) = 0.76mA VGE = 10V VCC = BVCES GATEEMITTER VOLTAGE 375 6 VCC = 0.25BVCES 250 NOTE: FOR TURN-OFF GATE CURRENTS IN EXCESS OF 3mA. VCE TURN-OFF IS NOT ACCURATELY REPRESENTED BY THIS NORMALIZATION. 125 +75 +100 +125 2 0 +150 20 TJ, JUNCTION TEMPERATURE (oC) FIGURE 13. TYPICAL CLAMPED INDUCTIVE TURN-OFF SWITCHING LOSS/CYCLE 4 COLLECTOR-EMITTER VOLTAGE 0 +50 8 VGE, GATE-EMITTER VOLTAGE (V) 1000 IG(REF) TIME (µs) IG(ACT) 80 IG(REF) IG(ACT) FIGURE 14. NORMALIZED SWITCHING WAVEFORMS AT CONSTANT GATE CURRENT. (REFER TO APPLICATION NOTES AN7254 AND AN7260) TYPICAL REVERSE RECOVERY TIME TYPICAL DIODE ON VOLTAGE 10 tRR, REVERSE RECOVERY TIME (ns) IEC , EMITTER-COLLECTOR CURRENT (A) 100 TJ = +150oC TJ = +100oC TJ = +25oC 1 TJ = -50oC 60 50 40 dIEC/dT ≥ 100A/µs 30 VR = 30V, TJ = +25oC 20 10 0.1 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 0 2 VEC, EMITTER-COLLECTOR (V) FIGURE 15. TYPICAL DIODE EMITTER-TO-COLLECTOR VOLTAGE vs CURRENT FOR ALL TYPES 4 6 8 10 12 14 16 18 IEC , EMITTER-COLLECTOR CURRENT (A) FIGURE 16. TYPICAL DIODE REVERSE-RECOVERY TIME FOR ALL TYPES Test Circuit RL = 13Ω L = 50µH VCC 1/RG = 1/RGEN + 1/RGE VCE(CLP)= 300V RGEN = 100Ω 20V 0V 20 RGE = 100Ω FIGURE 17. INDUCTIVE SWITCHING TEST CIRCUIT 3-24 HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D, HGTP10N50E1D All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. 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