INTERSIL HGTP15N50C1

HGTP15N40C1, 40E1, 50C1, 50E1,
HGTH20N40C1, 40E1, 50C1, 50E1
15A, 20A,
400V and 500V N-Channel IGBTs
April 1995
Features
Packages
HGTH-TYPES JEDEC TO-218AC
• 15A and 20A, 400V and 500V
EMITTER
• VCE(ON) 2.5V
COLLECTOR
• TFI 1µs, 0.5µs
GATE
COLLECTOR
(FLANGE)
• Low On-State Voltage
• Fast Switching Speeds
• High Input Impedance
• No Anti-Parallel Diode
Applications
• Power Supplies
HGTP-TYPES JEDEC TO-220AB
• Motor Drives
EMITTER
COLLECTOR
GATE
COLLECTOR
(FLANGE)
• Protection Circuits
Description
The HGTH20N40C1, HGTH20N40E1, HGTH20N50C1, HGTH20N50E1,
HGTP15N40C1, HGTP15N40E1, HGTP15N50C1 and HGTP15N50E1
are n-channel enhancement-mode insulated gate bipolar transistors
(IGBTs) designed for high-voltage, low on-dissipation applications such as
switching regulators and motor drivers. These types can be operated
directly from low-power integrated circuits.
Terminal Diagram
PACKAGING AVAILABILITY
PART NUMBER
HGTH20N40C1
PACKAGE
N-CHANNEL ENHANCEMENT MODE
BRAND
TO-218AC
G20N40C1
HGTH20N40E1
TO-218AC
G20N40E1
HGTH20N50C1
TO-218AC
G20N50C1
HGTH20N50E1
TO-218AC
G20N50E1
HGTP15N40C1
TO-220AB
G15N40C1
HGTP15N40E1
TO-220AB
G15N40E1
HGTP15N50C1
TO-220AB
G15N50C1
HGTP15N50E1
TO-220AB
G15N50E1
C
G
E
NOTE: When ordering, use the entire part number.
TC = +25oC, Unless Otherwise Specified
HGTH20N40C1 HGTH20N50C1
HGTH20N40E1 HGTH20N50E1
Collector-Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . .VCES
400
500
Collector-Gate Voltage RGE = 1MΩ. . . . . . . . . . . . . . . . VCGR
400
500
Reverse Collector-Emitter Voltage . . . . . . . . . . . . VCES(rev.)
-5
-5
Gate-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGE
±20
±20
Collector Current Continuous . . . . . . . . . . . . . . . . . . . . . . . IC
20
20
Collector Current Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
35
35
Power Dissipation at TC = +25oC . . . . . . . . . . . . . . . . . . . PD
100
100
Power Dissipation Derating TC > +25oC . . . . . . . . . . . . . . . . .
0.8
0.8
Operating and Storage Junction Temperature Range . . . TJ, TSTG -55 to +150
-55 to +150
Absolute Maximum Ratings
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
3-61
HGTP15N40C1
HGTP15N40E1
400
400
-5
±20
15
35
75
0.6
-55 to +150
HGTP15N50C1
HGTP15N50E1 UNITS
500
V
500
V
-5
V
±20
V
15
A
35
A
75
W
0.6
W/oC
oC
-55 to +150
File Number
2174.3
Specifications HGTP15N40C1, 40E1, 50C1, 50E1, HGTH20N40C1, 40E1, 50C1, 50E1
Electrical Specifications
TC = +25oC, Unless Otherwise Specified
LIMITS
HGTH20N40C1, E1,
HGTP15N40C1, E1
PARAMETERS
SYMBOL
TEST CONDITIONS
HGTH20N50C1, E1,
HGTP15N50C1, E1
MIN
MAX
MIN
MAX
UNITS
Collector-Emitter Breakdown
Voltage
BVCES
IC = 1mA, VGE = 0
400
-
500
-
V
Gate Threshold Voltage
VGE(TH)
VGE = VCE, IC = 1mA
2.0
4.5
2.0
4.5
V
VCE = 400V, TC = +25oC
-
250
-
-
µA
VCE = 500V, TC = +25oC
Zero-Gate Voltage Collector
Current
ICES
-
-
-
250
µA
+125oC
-
1000
-
-
µA
VCE = 500V, TC = +125oC
-
-
-
1000
µA
VCE = 400V, TC =
Gate-Emitter Leakage Current
IGES
VGE = ±20V, VCE = 0
-
100
-
100
nA
Reverse Collector-Emitter
Leakage Current
ICE
RGE = 0Ω, VEC = 5V
-
-5
-
-5
mA
VCE(ON)
IC = 20A, VGE = 10V
-
2.5
-
2.5
V
IC = 35A, VGE = 20V
-
3.2
-
3.2
V
VGEP
IC = 10A, VCE = 10V
-
6 (Typ)
-
6 (Typ)
V
On-State Gate Charge
QG(ON)
IC = 10A, VCE = 10V
-
33 (Typ)
-
33 (Typ)
nC
Turn-On Delay Time
tD(ON)I
IC = 20A, VCE(CLP) = 300V,
L = 25µH, TJ = +100oC,
VGE = 10V, RG = 25Ω
-
50
-
50
ns
-
50
-
50
ns
-
400
-
400
ns
40E1, 50E1
680 (Typ)
1000
680 (Typ)
1000
ns
40C1, 50C1
400
500
400
500
ns
Collector-Emitter on Voltage
Gate-Emitter Plateau Voltage
Rise Time
tRI
Turn-Off Delay Time
Fall Time
tD(OFF)I
tFI
Turn-Off Energy Loss per Cycle
(Off Switching Dissipation =
WOFF x Frequency)
WOFF
IC = 10A, VCE(CLP) = 300V,
L = 25µH, TJ = +100oC,
VGE = 10V, RG = 25Ω
40E1, 50E1
1810 (Typ)
40C1, 50C1
1070 (Typ)
Thermal Resistance
Junction-to-Case
RθJC
µJ
µJ
HGTH, HGTM
-
1.25
-
1.25
oC/W
HGTP
-
1.67
-
1.67
oC/W
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073
4,587,713
4,641,162
4,794,432
4,860,080
4,969,027
4,417,385
4,598,461
4,644,637
4,801,986
4,883,767
4,430,792
4,605,948
4,682,195
4,803,533
4,888,627
4,443,931
4,618,872
4,684,413
4,809,045
4,890,143
4,466,176
4,620,211
4,694,313
4,809,047
4,901,127
3-62
4,516,143
4,631,564
4,717,679
4,810,665
4,904,609
4,532,534
4,639,754
4,743,952
4,823,176
4,933,740
4,567,641
4,639,762
4,783,690
4,837,606
4,963,951
HGTP15N40C1, 40E1, 50C1, 50E1, HGTH20N40C1, 40E1, 50C1, 50E1
Typical Performance Curves
40
RATED POWER DISSIPATION (%)
ICE, COLLECTOR CURRENT (A)
VGE = 10V, RGEN = RGS = 50Ω
35
30
25
20
15
10
5
0
-75
-50
-25
0
+25
100
80
60
40
20
+50 +75 +100 +125 +150 +175
0
+25
+50
TJ , JUNCTION TEMPERATURE (oC)
+100
+125
+150
FIGURE 2. POWER DISSIPATION vs TEMPERATURE DERATING
CURVE
35
PULSE TEST, VCE = 10V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX.
VGE = VCE, IC = 1mA
1.3
ICE, COLLECTOR CURRENT (A)
NORMALIZED GATE THRESHOLD VOLTAGE
FIGURE 1. MAX. SWITCHING CURRENT LEVEL. RG = 25Ω,
VGE = 0V ARE THE MIN. ALLOWABLE VALUES
1.2
1.1
1.0
0.9
0.8
0.7
30
25
20
15
10
-40oC
+25oC
5
+125oC
-50
0
+50
+100
TC , JUNCTION TEMPERATURE
0
+150
0
ICE, COLLECTOR CURRENT (A)
VGE = 6V
25
20
15
VGE = 5V
10
5
10.0
35
PULSE TEST, VGE = 10V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX.
VGE = 7V
VGE = 10V
VGE = 8V
7.5
FIGURE 4. TYPICAL TRANSFER CHARACTERISTICS
TC = +25oC
30
5.0
VGE, GATE-TO-EMITTER VOLTAGE (V)
35
VGE = 20V
2.5
(oC)
FIGURE 3. TYPICAL NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE
ICE, COLLECTOR CURRENT (A)
+75
TC , CASE TEMPERATURE (oC)
VGE = 4V
30
25
20
+25oC
15
10
5
0
0
0
1
2
3
4
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
0
5
1
2
3
4
VCE(ON) , COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 5. TYPICAL SATURATION CHARACTERISTICS
FIGURE 6. TYPICAL COLLECTOR-TO-EMITTER ON-VOLTAGE
vs COLLECTOR CURRENT
3-63
HGTP15N40C1, 40E1, 50C1, 50E1, HGTH20N40C1, 40E1, 50C1, 50E1
2700
VCE(ON) , COLLECTOR-EMITTER ON VOLTAGE (V)
Typical Performance Curves (Continued)
f = 1MHz
C, CAPACITANCE (pF)
2250
1800
CISS
1350
900
450
COSS
CRSS
0
0
10
20
30
40
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
50
3.00
2.75
IC = 20A, VGE = 10V
2.50
IC = 20A, VGE = 15V
2.25
2.00
IC = 10A, VGE = 10V
1.75
IC = 10A, VGE = 15V
1.50
+25
+50
+75
+100
+125
+150
TJ , JUNCTION TEMPERATURE (oC)
FIGURE 7. CAPACITANCE vs COLLECTOR-TO-EMITTER
VOLTAGE
FIGURE 8. TYPICAL VCE(ON) vs TEMPERATURE
400
WOFF = ∫ IC * VCEdt
tD(OFF)I , SWITCHING TIME (ns)
IC = 20A, VGE = 10V, VCL = 300V
L = 25µH, RG = 25Ω
VGE
VCE
200
100
0
+25
+50
+75
+100
+125
TJ , JUNCTION TEMPERATURE (oC)
+150
FIGURE 9. TYPICAL TURN-OFF DELAY TIME
FIGURE 10. TYPICAL INDUCTIVE SWITCHING WAVEFORMS
800
800
IC = 10A, VGE = 10V, VCL = 300V
L = 25µH, RG = 25Ω
700
700
600
tFI , SWITCHING TIME (ns)
tFI , SWITCHING TIME (ns)
IC
300
40E1/50E1
500
400
40C1/50C1
300
200
100
IC = 20A, VGE = 10V, VCL = 300V
L = 25µH, RG = 25Ω
600
40E1/50E1
500
400
40C1/50C1
300
200
100
0
+25
+50
+75
+100
+125
0
+25
+150
TJ , JUNCTION TEMPERATURE (oC)
+50
+75
+100
+125
TJ , JUNCTION TEMPERATURE (oC)
FIGURE 11. TYPICAL FALL TIME (IC = 10A)
FIGURE 12. TYPICAL FALL TIME (IC = 20A)
3-64
+150
HGTP15N40C1, 40E1, 50C1, 50E1, HGTH20N40C1, 40E1, 50C1, 50E1
Typical Performance Curves (Continued)
L = 25µH, RG = 25Ω
VCE, COLLECTOR-EMITTER VOLTAGE (V)
WOFF , TURN-OFF ENERGY LOSS (µJ)
900
20A, 40E1/50E1
800
700
600
20A, 40C1/50C1
500
400
10A, 40E1/50E1
300
200
10A, 40C1/50C1
100
0
+25
10
500
VGE = 10V, VCE(CLP) = 300V
RL = 25Ω
IG(REF) = 0.76mA
BVCES
VGE = 10V
VCC = BVCES
GATEEMITTER
VOLTAGE
375
6
VCC = 0.25BVCES
250
NOTE:
FOR TURN-OFF GATE CURRENTS IN
EXCESS OF 3mA. VCE TURN-OFF IS
NOT ACCURATELY REPRESENTED
BY THIS NORMALIZATION.
125
+75
+100
+125
+150
FIGURE 13. TYPICAL CLAMPED INDUCTIVE TURN-OFF
SWITCHING LOSS/CYCLE
2
0
20
TJ , JUNCTION TEMPERATURE (oC)
4
COLLECTOR-EMITTER VOLTAGE
0
+50
8
VGE , GATE-EMITTER VOLTAGE (V)
1000
IG(REF)
TIME (µs)
IG(ACT)
80
IG(REF)
IG(ACT)
FIGURE 14. NORMALIZED SWITCHING WAVEFORMS AT CONSTANT GATE CURRENT. (REFER TO APPLICATION NOTES AN7254 AND AN7260 ON THE USE
OF NORMALIZED SWITCHING WAVEFORMS)
Test Circuit
RL = 4Ω
L = 25µH
VCC
1/RG = 1/RGEN + 1/RGE
RGEN = 50Ω
80V
VCE(CLP) =
300V
20V
0V
RGE = 50Ω
FIGURE 15. INDUCTIVE SWITCHING TEST CIRCUIT
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Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate
and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which
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