HGTP15N40C1, 40E1, 50C1, 50E1, HGTH20N40C1, 40E1, 50C1, 50E1 15A, 20A, 400V and 500V N-Channel IGBTs April 1995 Features Packages HGTH-TYPES JEDEC TO-218AC • 15A and 20A, 400V and 500V EMITTER • VCE(ON) 2.5V COLLECTOR • TFI 1µs, 0.5µs GATE COLLECTOR (FLANGE) • Low On-State Voltage • Fast Switching Speeds • High Input Impedance • No Anti-Parallel Diode Applications • Power Supplies HGTP-TYPES JEDEC TO-220AB • Motor Drives EMITTER COLLECTOR GATE COLLECTOR (FLANGE) • Protection Circuits Description The HGTH20N40C1, HGTH20N40E1, HGTH20N50C1, HGTH20N50E1, HGTP15N40C1, HGTP15N40E1, HGTP15N50C1 and HGTP15N50E1 are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high-voltage, low on-dissipation applications such as switching regulators and motor drivers. These types can be operated directly from low-power integrated circuits. Terminal Diagram PACKAGING AVAILABILITY PART NUMBER HGTH20N40C1 PACKAGE N-CHANNEL ENHANCEMENT MODE BRAND TO-218AC G20N40C1 HGTH20N40E1 TO-218AC G20N40E1 HGTH20N50C1 TO-218AC G20N50C1 HGTH20N50E1 TO-218AC G20N50E1 HGTP15N40C1 TO-220AB G15N40C1 HGTP15N40E1 TO-220AB G15N40E1 HGTP15N50C1 TO-220AB G15N50C1 HGTP15N50E1 TO-220AB G15N50E1 C G E NOTE: When ordering, use the entire part number. TC = +25oC, Unless Otherwise Specified HGTH20N40C1 HGTH20N50C1 HGTH20N40E1 HGTH20N50E1 Collector-Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . .VCES 400 500 Collector-Gate Voltage RGE = 1MΩ. . . . . . . . . . . . . . . . VCGR 400 500 Reverse Collector-Emitter Voltage . . . . . . . . . . . . VCES(rev.) -5 -5 Gate-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGE ±20 ±20 Collector Current Continuous . . . . . . . . . . . . . . . . . . . . . . . IC 20 20 Collector Current Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . ICM 35 35 Power Dissipation at TC = +25oC . . . . . . . . . . . . . . . . . . . PD 100 100 Power Dissipation Derating TC > +25oC . . . . . . . . . . . . . . . . . 0.8 0.8 Operating and Storage Junction Temperature Range . . . TJ, TSTG -55 to +150 -55 to +150 Absolute Maximum Ratings CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 3-61 HGTP15N40C1 HGTP15N40E1 400 400 -5 ±20 15 35 75 0.6 -55 to +150 HGTP15N50C1 HGTP15N50E1 UNITS 500 V 500 V -5 V ±20 V 15 A 35 A 75 W 0.6 W/oC oC -55 to +150 File Number 2174.3 Specifications HGTP15N40C1, 40E1, 50C1, 50E1, HGTH20N40C1, 40E1, 50C1, 50E1 Electrical Specifications TC = +25oC, Unless Otherwise Specified LIMITS HGTH20N40C1, E1, HGTP15N40C1, E1 PARAMETERS SYMBOL TEST CONDITIONS HGTH20N50C1, E1, HGTP15N50C1, E1 MIN MAX MIN MAX UNITS Collector-Emitter Breakdown Voltage BVCES IC = 1mA, VGE = 0 400 - 500 - V Gate Threshold Voltage VGE(TH) VGE = VCE, IC = 1mA 2.0 4.5 2.0 4.5 V VCE = 400V, TC = +25oC - 250 - - µA VCE = 500V, TC = +25oC Zero-Gate Voltage Collector Current ICES - - - 250 µA +125oC - 1000 - - µA VCE = 500V, TC = +125oC - - - 1000 µA VCE = 400V, TC = Gate-Emitter Leakage Current IGES VGE = ±20V, VCE = 0 - 100 - 100 nA Reverse Collector-Emitter Leakage Current ICE RGE = 0Ω, VEC = 5V - -5 - -5 mA VCE(ON) IC = 20A, VGE = 10V - 2.5 - 2.5 V IC = 35A, VGE = 20V - 3.2 - 3.2 V VGEP IC = 10A, VCE = 10V - 6 (Typ) - 6 (Typ) V On-State Gate Charge QG(ON) IC = 10A, VCE = 10V - 33 (Typ) - 33 (Typ) nC Turn-On Delay Time tD(ON)I IC = 20A, VCE(CLP) = 300V, L = 25µH, TJ = +100oC, VGE = 10V, RG = 25Ω - 50 - 50 ns - 50 - 50 ns - 400 - 400 ns 40E1, 50E1 680 (Typ) 1000 680 (Typ) 1000 ns 40C1, 50C1 400 500 400 500 ns Collector-Emitter on Voltage Gate-Emitter Plateau Voltage Rise Time tRI Turn-Off Delay Time Fall Time tD(OFF)I tFI Turn-Off Energy Loss per Cycle (Off Switching Dissipation = WOFF x Frequency) WOFF IC = 10A, VCE(CLP) = 300V, L = 25µH, TJ = +100oC, VGE = 10V, RG = 25Ω 40E1, 50E1 1810 (Typ) 40C1, 50C1 1070 (Typ) Thermal Resistance Junction-to-Case RθJC µJ µJ HGTH, HGTM - 1.25 - 1.25 oC/W HGTP - 1.67 - 1.67 oC/W INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS: 4,364,073 4,587,713 4,641,162 4,794,432 4,860,080 4,969,027 4,417,385 4,598,461 4,644,637 4,801,986 4,883,767 4,430,792 4,605,948 4,682,195 4,803,533 4,888,627 4,443,931 4,618,872 4,684,413 4,809,045 4,890,143 4,466,176 4,620,211 4,694,313 4,809,047 4,901,127 3-62 4,516,143 4,631,564 4,717,679 4,810,665 4,904,609 4,532,534 4,639,754 4,743,952 4,823,176 4,933,740 4,567,641 4,639,762 4,783,690 4,837,606 4,963,951 HGTP15N40C1, 40E1, 50C1, 50E1, HGTH20N40C1, 40E1, 50C1, 50E1 Typical Performance Curves 40 RATED POWER DISSIPATION (%) ICE, COLLECTOR CURRENT (A) VGE = 10V, RGEN = RGS = 50Ω 35 30 25 20 15 10 5 0 -75 -50 -25 0 +25 100 80 60 40 20 +50 +75 +100 +125 +150 +175 0 +25 +50 TJ , JUNCTION TEMPERATURE (oC) +100 +125 +150 FIGURE 2. POWER DISSIPATION vs TEMPERATURE DERATING CURVE 35 PULSE TEST, VCE = 10V PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX. VGE = VCE, IC = 1mA 1.3 ICE, COLLECTOR CURRENT (A) NORMALIZED GATE THRESHOLD VOLTAGE FIGURE 1. MAX. SWITCHING CURRENT LEVEL. RG = 25Ω, VGE = 0V ARE THE MIN. ALLOWABLE VALUES 1.2 1.1 1.0 0.9 0.8 0.7 30 25 20 15 10 -40oC +25oC 5 +125oC -50 0 +50 +100 TC , JUNCTION TEMPERATURE 0 +150 0 ICE, COLLECTOR CURRENT (A) VGE = 6V 25 20 15 VGE = 5V 10 5 10.0 35 PULSE TEST, VGE = 10V PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX. VGE = 7V VGE = 10V VGE = 8V 7.5 FIGURE 4. TYPICAL TRANSFER CHARACTERISTICS TC = +25oC 30 5.0 VGE, GATE-TO-EMITTER VOLTAGE (V) 35 VGE = 20V 2.5 (oC) FIGURE 3. TYPICAL NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE ICE, COLLECTOR CURRENT (A) +75 TC , CASE TEMPERATURE (oC) VGE = 4V 30 25 20 +25oC 15 10 5 0 0 0 1 2 3 4 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) 0 5 1 2 3 4 VCE(ON) , COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 5. TYPICAL SATURATION CHARACTERISTICS FIGURE 6. TYPICAL COLLECTOR-TO-EMITTER ON-VOLTAGE vs COLLECTOR CURRENT 3-63 HGTP15N40C1, 40E1, 50C1, 50E1, HGTH20N40C1, 40E1, 50C1, 50E1 2700 VCE(ON) , COLLECTOR-EMITTER ON VOLTAGE (V) Typical Performance Curves (Continued) f = 1MHz C, CAPACITANCE (pF) 2250 1800 CISS 1350 900 450 COSS CRSS 0 0 10 20 30 40 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) 50 3.00 2.75 IC = 20A, VGE = 10V 2.50 IC = 20A, VGE = 15V 2.25 2.00 IC = 10A, VGE = 10V 1.75 IC = 10A, VGE = 15V 1.50 +25 +50 +75 +100 +125 +150 TJ , JUNCTION TEMPERATURE (oC) FIGURE 7. CAPACITANCE vs COLLECTOR-TO-EMITTER VOLTAGE FIGURE 8. TYPICAL VCE(ON) vs TEMPERATURE 400 WOFF = ∫ IC * VCEdt tD(OFF)I , SWITCHING TIME (ns) IC = 20A, VGE = 10V, VCL = 300V L = 25µH, RG = 25Ω VGE VCE 200 100 0 +25 +50 +75 +100 +125 TJ , JUNCTION TEMPERATURE (oC) +150 FIGURE 9. TYPICAL TURN-OFF DELAY TIME FIGURE 10. TYPICAL INDUCTIVE SWITCHING WAVEFORMS 800 800 IC = 10A, VGE = 10V, VCL = 300V L = 25µH, RG = 25Ω 700 700 600 tFI , SWITCHING TIME (ns) tFI , SWITCHING TIME (ns) IC 300 40E1/50E1 500 400 40C1/50C1 300 200 100 IC = 20A, VGE = 10V, VCL = 300V L = 25µH, RG = 25Ω 600 40E1/50E1 500 400 40C1/50C1 300 200 100 0 +25 +50 +75 +100 +125 0 +25 +150 TJ , JUNCTION TEMPERATURE (oC) +50 +75 +100 +125 TJ , JUNCTION TEMPERATURE (oC) FIGURE 11. TYPICAL FALL TIME (IC = 10A) FIGURE 12. TYPICAL FALL TIME (IC = 20A) 3-64 +150 HGTP15N40C1, 40E1, 50C1, 50E1, HGTH20N40C1, 40E1, 50C1, 50E1 Typical Performance Curves (Continued) L = 25µH, RG = 25Ω VCE, COLLECTOR-EMITTER VOLTAGE (V) WOFF , TURN-OFF ENERGY LOSS (µJ) 900 20A, 40E1/50E1 800 700 600 20A, 40C1/50C1 500 400 10A, 40E1/50E1 300 200 10A, 40C1/50C1 100 0 +25 10 500 VGE = 10V, VCE(CLP) = 300V RL = 25Ω IG(REF) = 0.76mA BVCES VGE = 10V VCC = BVCES GATEEMITTER VOLTAGE 375 6 VCC = 0.25BVCES 250 NOTE: FOR TURN-OFF GATE CURRENTS IN EXCESS OF 3mA. VCE TURN-OFF IS NOT ACCURATELY REPRESENTED BY THIS NORMALIZATION. 125 +75 +100 +125 +150 FIGURE 13. TYPICAL CLAMPED INDUCTIVE TURN-OFF SWITCHING LOSS/CYCLE 2 0 20 TJ , JUNCTION TEMPERATURE (oC) 4 COLLECTOR-EMITTER VOLTAGE 0 +50 8 VGE , GATE-EMITTER VOLTAGE (V) 1000 IG(REF) TIME (µs) IG(ACT) 80 IG(REF) IG(ACT) FIGURE 14. NORMALIZED SWITCHING WAVEFORMS AT CONSTANT GATE CURRENT. (REFER TO APPLICATION NOTES AN7254 AND AN7260 ON THE USE OF NORMALIZED SWITCHING WAVEFORMS) Test Circuit RL = 4Ω L = 25µH VCC 1/RG = 1/RGEN + 1/RGE RGEN = 50Ω 80V VCE(CLP) = 300V 20V 0V RGE = 50Ω FIGURE 15. INDUCTIVE SWITCHING TEST CIRCUIT All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. 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