tispl758lf3d

CO
M
PL
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TISPL758LF3D
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S
INTEGRATED SYMMETRICAL AND ASYMMETRICAL
BIDIRECTIONAL OVERVOLTAGE PROTECTORS FOR
LUCENT TECHNOLOGIES L7581/2/3 LINE CARD ACCESS SWITCHES
TISPL758LF3D LCAS Protector
Symmetrical and Asymmetrical Characteristics for
Optimum Protection of Lucent L7581/2/3 LCAS
VDRM
Terminal Pair
D Package (Top View)
V(BO)
V
V
± 105
±130
T-G (SYMMETRICAL)
R-G (ASYMMETRICAL)
+105, -180
+130, -220
Customized versions available
T
1
8
G
NC
2
7
G
NC
3
6
G
R
4
5
G
MDXX AEB
NC - No internal connection
Rated for International Surge Wave Shapes
Wave Shape
Standard
2/10 µs
8/20 µs
10/160 µs
10/700 µs
10/560 µs
10/1000 µs
GR-1089-CORE
ANSI C62.41
FCC Part 68
ITU-T K20/21
FCC Part 68
GR-1089-CORE
ITSP
A
175
120
60
50
45
35
Device Symbol
T
R
SD3XAA
Ion-Implanted Breakdown Region
—Precise And Stable Voltage
— Low Voltage Overshoot Under Surge
G
Terminals T, R and G correspond to the
alternative line designators of A, B and C
Planar Passivated Junctions
— Low Off-State Current................................................< ±10 µA
..............................................UL Recognized Component
How to Order
Device
TISPL758LF3D
Carrier
Order As
Tube
TISPL758LF3D-S
Taped and reeled
TISPL758LF3DR-S
Description
The TISPL758LF3 is an integrated combination of a symmetrical bidirectional overvoltage protector and an asymmetrical bidirectional
overvoltage protector. It is designed to limit the peak voltages on the line terminals of the Lucent Technologies L7581/2/3 LCAS (Line Card
Access Switches). An LCAS may also be referred to as a Solid State Relay, SSR, i.e. a replacement of the conventional electro-mechanical
relay.
The TISPL758LF3D voltages are chosen to give adequate LCAS protection for all switch conditions. The most potentially stressful condition is
low level power cross when the LCAS switches are closed. Under this condition, the TISPL758LF3D limits the voltage and corresponding LCAS
dissipation until the LCAS thermal trip operates and opens the switches.
Under open-circuit ringing conditions, the line ring (R) conductor will have high peak voltages. For battery backed ringing, the ring conductor
will have a larger peak negative voltage than positive i.e. the peak voltages are asymmetric. An overvoltage protector with a similar voltage
asymmetry will give the most effective protection. On a connected line, the tip (T) conductor will have much smaller voltage levels than the
open-circuit ring conductor values. Here a symmetrical voltage protector gives adequate protection.
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex
JANUARY 1998 – REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISPL758LF3D LCAS Protector
Description (Continued)
Overvoltages are normally caused by a.c. power system or lightning flash disturbances which are induced or conducted on to the telephone
line. These overvoltages are initially clipped by protector breakdown clamping until the voltage rises to the breakover level, which causes the
device to crowbar into a low-voltage on state. This low-voltage on state causes the current resulting from the overvoltage to be safely diverted
through the device. For negative surges, the high crowbar holding current helps prevent d.c. latchup with the SLIC current, as the surge current
subsides. The TISPL758LF3 is guaranteed to voltage limit and withstand the listed international lightning surges in both polarities.
Support from the Microelectronics Group of Lucent Technologies Inc. is gratefully acknowledged in the definition of the TISPL758LF3D voltage
levels and for performing TISPL758LF3D evaluations.
Absolute Maximum Ratings, TA = 25 °C (Unless Otherwise Noted)
Rating
Symbol
Repetitive peak off-state voltage
R-G terminals
T-G terminals
Value
-180, +105
VDRM
-105, +105
Unit
V
Non-repetitive peak on-state pulse current (see Notes 1, 2 and 3)
2/10 µs (GR-1089-CORE, 2/10 µs voltage wave shape)
175
8/20 µs (ANSI C62.41, 1.2/50 µs voltage wave shape)
120
10/160 µs (FCC Part 68, 10/160 µs voltage wave shape)
60
5/200 µs (VDE 0433, 2.0 kV, 10/700 µs voltage wave shape)
50
ITSP
0.2/310 µs (I3124, 2.0 kV, 0.5/700 µs voltage wave shape)
A
50
5/310 µs (ITU-T K20/21, 2.0 kV, 10/700 µs voltage wave shape)
50
5/310 µs (FTZ R12, 2.0 kV, 10/700 µs voltage wave shape)
50
10/560 µs (FCC Part 68, 10/560 µs voltage wave shape)
45
10/1000 µs (GR-1089-CORE, 10/1000 µs voltage wave shape)
35
Non-repetitive peak on-state current (see Notes 1, 2 and 3)
full sine wave
50 Hz
60 Hz
16
ITSM
A
20
Repetitive peak on-state current, 50/60 Hz, (see Notes 2 and 3)
ITSM
2x1
A
Initial rate of rise of on-state current,
diT/dt
150
A/µs
TJ
-40 to +150
°C
Tstg
-40 to +150
°C
Exponential current ramp, Maximum ramp value < 70 A
Junction temperature
Storage temperature range
NOTES: 1. Above the maximum specified temperature, derate linearly to zero at 150 °C lead temperature.
2. Initially the TISPL758LF 3 must be in thermal equilibrium with 0 °C < T J <70 °C.
3. The surge may be repeated after the TISPL758LF3 returns to its initial conditions.
Recommended Operating Conditions
Component
R1
first-level surge, operational pass (4.5.7)
20
Series Resistor for FCC Part 68
10/160 non-operational pass
0
10/160 operational pass
18
10/560 non-operational pass
0
10/560 operational pass
10
R1
R1
Min
Series Resistor for GR-1089-CORE
Series Resistor for ITU-T K20/21
10/700, < 2 kV, operational pass
0
10/700, 4 kV, operational pass
40
Typ
Max
Unit
Ω
Ω
Ω
JANUARY 1998 – REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISPL758LF3D LCAS Protector
Electrical Characteristics for the T-G and R-G Terminal Pairs, TJ = 25 °C (Unless Otherwise Noted)
Parameter
IDRM
V(BO)
V(BO)
Value
Test Conditions
Repetitive peak offstate current
±10
-220
+130
T-G terminals
-130
+130
Rated impulse conditions with operational pass
R-G terminals
-240
+140
series resistor
T-G terminals
-140
+140
Impulse breakover
voltage
ID
Max
R-G terminals
dv/dt = ± 250 V/ms,
Holding current
Typ
VD = ± VDRM, (See Note 4)
Breakover voltage
IH
Min
RSOURCE = 300 Ω
di/dt = -30 mA/ms
+100
di/dt = +30 mA/ms
-150
Unit
µA
V
V
mA
Off-state current
0 < VD < ±50 V, TJ = 85 °C
CTG
Off-state capacitance
f = 100 kHz,
Vd = 1 V rms
VTG = -5 V, (See Note 5)
18
± 10
36
µA
pF
CRG
Off-state capacitance
f = 100 kHz,
Vd = 1 V rms
VTG = -50 V, (See Note 5)
10
20
pF
NOTES: 4. Positive and negative values of V DRM are not equal. See ratings table.
5. These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The third terminal is
connected to the guard terminal of the bridge.
Thermal Characteristics
Parameter
RθJA
Junction to free air thermal resistance
JANUARY 1998 – REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Test Conditions
Min
Typ
Max
Unit
160
°C/W
TISPL758LF3D LCAS Protector
Parameter Measurement Information
+i
Quadrant I
ITSP
Switching
Characteristic
ITSM
V(BO)
I(BO)
IH
IDRM
VD
V DRM
-v
ID
ID
+v
VD
V DRM
IDRM
IH
I(BO)
V(BO)
ITSM
Quadrant III
ITSP
Switching
Characteristic
-i
PMXXAE
Figure 1. Asymmetrical Voltage-Current Characteristic for R-G Terminal Pair
+i
Quadrant I
ITSP
Switching
Characteristic
ITSM
V(BO)
I(BO)
IH
IDRM
V DRM
-v
VD
ID
ID
VD
+v
V DRM
IDRM
IH
I(BO)
V(BO)
ITSM
Quadrant III
Switching
Characteristic
ITSP
-i
PMXXAH
Figure 2. Symmetrical Voltage-current Characteristic for T-G Terminal Pair
JANUARY 1998 – REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISPL758LF3D LCAS Protector
Typical Characteristics
OFF-STATE CURRENT
vs
JUNCTION TEMPERATURE
TC3MAG
100
1.2
NORMALIZED BREAKDOWN VOLTAGES
vs
JUNCTION TEMPERATURE TC3MAJA
V D = ±50 V
Normalized Breakdown Voltages
ID - Off-State Current - µA
10
1
0.1
0.01
0.001
1.1
V(BO)
1.0
V DRM
0.9
-25
0
25
50
75
100
125
150
-25
TJ - Junction Temperature - °C
0
25
75
100
125
150
TJ - Junction Temperature - °C
Figure 3.
Figure 4.
NORMALIZED BREAKOVER VOLTAGE
vs
RATE OF RISE OF PRINCIPLE CURRENT
TC3MAC
1.3
2.0
NORMALIZED HOLDING CURRENT
vs
JUNCTION TEMPERATURE TC3MAHA
1.5
Normalized Holding Current
Normalized Breakover Voltage
50
1.2
1.1
1.0
0.9
0.8
0.7
0.6
1.0
0.001
0.5
0.01
0.1
1
10
di/dt - Rate of Rise of Principle Current - A/µs
Figure 5.
JANUARY 1998 – REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
100
-25
0
25
50
75
100
TJ - Junction Temperature - °C
Figure 6.
125
150
TISPL758LF3D LCAS Protector
Applications Information
TIP
WIRE
OVERCURRENT
PROTECTION TISPL758LF3D
LCAS
SLIC
TLINE
TBAT
RLINE
RBAT
R1a
Th1
Th2
RING
WIRE
R1b
RRINGING
TRINGING
R2b
V BAT
R2a
±V RING
V RINGBAT
S4b
S4a
RING
GENERATOR
Figure 7. LCAS Protection with a TISPL758LF3D
JANUARY 1998 – REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Bourns Sales Offices
Region
The Americas:
Europe:
Asia-Pacific:
Phone
+1-951-781-5500
+41-41-7685555
+886-2-25624117
Fax
+1-951-781-5700
+41-41-7685510
+886-2-25624116
Phone
+1-951-781-5500
+41-41-7685555
+886-2-25624117
Fax
+1-951-781-5700
+41-41-7685510
+886-2-25624116
Technical Assistance
Region
The Americas:
Europe:
Asia-Pacific:
www.bourns.com
Bourns® products are available through an extensive network of manufacturer’s representatives, agents and distributors.
To obtain technical applications assistance, a quotation, or to place an order, contact a Bourns representative in your area.
“TISP” is a trademark of Bourns, Ltd., a Bourns Company, and is Registered in U.S. Patent and Trademark Office.
“Bourns” is a registered trademark of Bourns, Inc. in the U.S. and other countries.
COPYRIGHT© 2005, BOURNS, INC. LITHO IN U.S.A. e 07/05 TSP0410