TISP4500H3BJ

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TISP4500H3BJ
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BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
TISP4500H3BJ Overvoltage Protector
Non-Conductive During K.20/21/45 Power Contact Test
- Off-State Voltage .................................................... >245 V rms
- For Controlled Environment ............................... 0 °C to 70 °C
SMBJ Package (Top View)
Ion-Implanted Breakdown Region
Precise and Stable Voltage
Low Voltage Overshoot under Surge
Device
TISP4500H3BJ
R 1
VDRM
V(BO)
V @ 0 °C
V @ 70 °C
350
500
2 T
MD-SMB-004-a
Device Symbol
Rated for International Surge Wave Shapes
Wave Shape
T
IPPSM
Standard
A
2/10
GR-1089-CORE
500
10/250
GR-1089-CORE
230
10/700
ITU-T K.20/21/45
200
10/1000
GR-1089-CORE
100
R
SD-TISP4xxx-001-a
.............................................. UL Recognized Component
Description
This device is designed to limit overvoltages on the telephone line to ±500 V over the temperature range. The minimum off-state voltage of
±350 V allows a.c. power contact voltages of up to 245 V rms to occur without clipping. The combination of these two voltages gives
protection for components having ratings of 500 V or above and ensures the protector is non-conducting for the ITU-T recommendations
K.20/21/45 230 V rms power cross test condition (test number 2.3.1).
The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially clipped by breakdown clamping until
the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This low-voltage on state causes the
current resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current helps prevent d.c. latchup as
the diverted current subsides.
How To Order
Device
TISP4500H3BJ
Carrier
Order As
Embossed Tape Reeled
TISP4500H3BJR-S
Package
SMB (DO-214AA)
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex
APRIL 2001 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Marking
Code Std. Qty.
4500H3
3000
TISP4500H3BJ Overvoltage Protector
Absolute Maximum Ratings, 0 °C ≤ T A ≤ 70 °C (Unless Otherwise Noted)
Rating
Repetitive peak off-state voltage
Symbol
Value
Unit
VDRM
±350
V
Non-repetitive peak on-state pulse current (see Notes 1 and 2)
TA = 25 °C
TA = 25 °C
2/10 (Telcordia GR-1089-CORE, 2/10 µs voltage wave shape)
10/250 (Telcordia GR-1089-CORE, 10/250 µs voltage wave shape)
10/700 (ITU-T K.20/21/45, 5/310 µs current wave shape)
10/1000 (Telcordia GR-1089-CORE, 10/1000 µs voltage wave shape)
500
230
200
100
IPPSM
TA = 25 °C
A
Non-repetitive peak on-state current (see Notes 1, 2 and 3)
50 Hz, 20 ms (1 cycle)
50 Hz, 1000 s
Junction temperature
Storage temperature range
ITSM
±55
±2.0
A
TJ
-40 to +150
°C
Tstg
-65 to +150
°C
NOTES: 1. Initially the device must be in thermal equilibrium.
2. The surge may be repeated after the device returns to its initial conditions.
3. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring
track widths.
Electrical Characteristics, 0 °C ≤ TA ≤ 70 °C (Unless Otherwise Noted)
Parameter
IDRM
V(BO)
V(BO)
Test Conditions
Repetitive peak offstate current
Breakover voltage
Impulse breakover
voltage
VD = VDRM
dv/dt = ±250 V/ms,
Max
±5
TA = 70 °C
±10
RSOURCE = 300 Ω
Figure A.3-1/K.44 10/700 impulse generator
Unit
µA
±500
V
±500
V
±0.6
A
±10
µA
Charge Voltage = ±4 kV
Breakover current
IH
Holding current
IT = ±5 A, di/dt = -/+30 mA/ms
ID
Off-state current
VD = ±50 V
Off-state capacitance
Typ
ITU-T recommendation K.44 (02/2000)
I(BO)
Coff
Min
TA = 25 °C
dv/dt = ±250 V/ms,
RSOURCE = 300 Ω
A
±0.15
TA = 70 °C
f = 1 MHz, Vd = 1 V rms, VD = 0
84
f = 1 MHz, Vd = 1 V rms, VD = -1 V
67
f = 1 MHz, Vd = 1 V rms, VD = -2 V
62
f = 1 MHz, Vd = 1 V rms, VD = -50 V
31
pF
Thermal Characteristics
Parameter
Test Conditions
Min
Typ
EIA/JESD51-3 PCB, IT = ITSM(1000),
RθJA
Junction to free air thermal resistance
4-layer PCB, IT = ITSM(1000), TA = 25 °C
Unit
113
TA = 25 °C, (see Note 5)
265 mm x 210 mm populated line card,
Max
°C/W
50
NOTE 5: EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths.
APRIL 2001 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4500H3BJ Overvoltage Protector
Parameter Measurement Information
+i
Quadrant I
IPPSM
Switching
Characteristic
ITSM
V(BO)
I(BO)
IH
VD
-v
V(BR)
I(BR)
ID
ID
I(BR)
V(BR)
VD
+v
IH
I(BO)
V(BO)
ITSM
Quadrant III
IPPSM
Switching
Characteristic
-i
Figure 1. Voltage-current Characteristic for T and R Terminals
All Measurements are Referenced to the R Terminal
APRIL 2001 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
PM4XAD
TISP4500H3BJ Overvoltage Protector
MECHANICAL DATA
Recommended Printed Wiring Land Pattern Dimensions
SMB Land Pattern
2.54
(.100)
2.40
(.094)
2.16
(.085)
DIMENSIONS ARE:
MM
(INCHES)
MDXXBIB
Device Symbolization Code
Devices will be coded as below. As the device parameters are symmetrical, terminal 1 is not identified.
Device
Symbolization Code
TISP4500H3BJ
4500H3
“TISP” is a trademark of Bourns, Ltd., a Bourns Company, and is Registered in U.S. Patent and Trademark Office.
“Bourns” is a registered trademark of Bourns, Inc. in the U.S. and other countries.
APRIL 2001 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.