tisp4xxxj3bj

M
PL
IA
N
T
TISP4070J3BJ THRU TISP4395J3BJ
*R
oH
S
CO
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
TISP4xxxJ3BJ Overvoltage Protector Series
Ion-Implanted Breakdown Region
-Precise and Stable Voltage
-Low Voltage Overshoot Under Surge
SMB Package (Top View)
Designed for Transformer Center Tap (Ground Return)
Overvoltage Protection
-Enables GR-1089-CORE Compliance
-High Holding Current Allows Protection of Data Lines
with d.c. Power Feed
R
V
V
58
70
TISP4080J3BJ
65
80
TISP4095J3BJ
75
95
T
Device Symbol
T
V(BO)
VDRM
TISP4070J3BJ
2
MD-SMB-004-a
Can be Used to Protect Rugged Modems Designed for Exposed
Applications Exceeding TIA-968-A
Device Name
1
TISP4115J3BJ
90
115
TISP4125J3BJ
100
125
TISP4145J3BJ
120
145
TISP4165J3BJ
135
165
TISP4180J3BJ
145
180
TISP4200J3BJ
155
200
Wave Shape
Standard
TISP4219J3BJ
180
219
2/10
GR-1089-CORE
1000
800
R
SD-TISP4xxx-001-a
Rated for International Surge Wave Shapes
IPPSM
A
TISP4250J3BJ
190
250
8/20
IEC 61000-4-5
TISP4290J3BJ
220
290
10/160
TIA-968-A
400
TISP4350J3BJ
275
350
10/700
ITU-T K.20/21/45
350
TISP4395J3BJ
320
395
10/560
TIA-968-A
250
10/1000
GR-1089-CORE
200
.................................................UL Recognized Component
Description
The range of TISP4xxxJ3BJ devices are designed to limit overvoltages on telecom lines. The TISP4xxxJ3BJ is primarily designed to address
GR-1089-CORE compliance on data transmission lines with d.c. power feeding. When overvoltage protection is applied to transformer coupled
lines from the transformer center tap to ground, the total ground return current can be 200 A, 10/1000 and 1000 A, 2/10. The high 150 mA
holding current is set above common d.c. feed system levels to allow the TISP4xxxJ3BJ to reset following a disturbance.
These devices allow signal voltages, without clipping, up to the maximum off-state voltage value, VDRM, see Figure 1. Voltages above VDRM
are limited and will not exceed the breakover voltage, V(BO), level. If sufficient current flows due to the overvoltage, the device switches into a
low voltage on-state condition, which diverts the current from the overvoltage through the device. When the diverted current falls below the
holding current, IH, level the devices switches off and restores normal system operation.
How to Order
Device
Package
Carrier
Order As
Marking Code
Std. Qty.
TISP4xxxJ3BJ
SMB (DO-214AA)
Embossed Tape Reeled
TISP4xxxJ3BJR-S
4xxxJ3
3000
Insert xxx value corresponding to device name.
*RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011.
JULY 2003 - REVISED NOVEMBER 2013
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
TISP4xxxJ3BJ Overvoltage Protector Series
Absolute Maximum Ratings, TA = 25 °C (Unless Otherwise Noted)
Rating
Symbol
Value
U nit
VDRM
±58
±65
±75
±90
±100
±120
±135
±145
±155
±180
±190
±220
±275
±320
V
IPPSM
±1000
±800
±400
±370
±350
±350
±250
±200
A
ITSM
50
A
diT/dt
800
A/µs
TJ
-40 to +150
°C
Tstg
-65 to +150
°C
‘4070J3BJ
‘4080J3BJ
‘4095J3BJ
‘4115J3BJ
‘4125J3BJ
‘4145J3BJ
‘4165J3BJ
‘4180J3BJ
‘4200J3BJ
‘4219J3BJ
‘4250J3BJ
‘4290J3BJ
‘4350J3BJ
‘4395J3BJ
Repetitive peak off-state voltage
Non-repetitive peak impulse current (see Notes 1 and 2)
2/10 µs (GR-1089-CORE, 2/10 µs voltage wave shape)
8/20 µs (IEC 61000-4-5, combination wave generator, 1.2/50 µsvoltage wave shape)
10/160 µs (TIA-968-A, 10/160 µs voltage wave shape)
4/250 µs (ITU-T K.20/21, 10/700 µs voltage waveshape, simultaneous)
5/310 µs (ITU-T K.20/21, 10/700 µs voltage wave shape, single)
5/320 µs (TIA-968-A, 9/720 µs voltage waveshape, single)
10/560 µs (TIA-968-A, 10/560 µs voltage wave shape)
10/1000 µs (GR-1089-CORE, 10/1000 µs voltage wave shape)
Non-repetitive peak on-state current (see Notes 1 and 2)
20 ms, 50 Hz (full sine wave)
Initial rate of rise of on-state current. Linear current ramp. Maximum ramp value < 50 A
Junction temperature
Storage temperature range
NOTES: 1. Initially the device must be in thermal equilibrium with TJ = 25 °C.
2. These non-repetitive rated currents are peak values of either polarity. The surge may be repeated after the device returns to its
initial conditions.
Electrical Characteristics, TA = 25 °C (Unless Otherwise Noted)
Parameter
IDRM
V(BO)
Test Conditions
Repetitive peak
off-state current
AC Breakover voltage
Min
Typ Max
Unit
VD = VDRM
TA = 25 °C
TA = 85 °C
±5
±10
µA
dv/dt = ±250 V/ms, RSOURCE = 300 Ω
‘4070J3BJ
‘4080J3BJ
‘4095J3BJ
‘4115J3BJ
‘4125J3BJ
‘4145J3BJ
‘4165J3BJ
‘4180J3BJ
‘4200J3BJ
‘4219J3BJ
‘4250J3BJ
‘4290J3BJ
‘4350J3BJ
‘4395J3BJ
±70
±80
±95
±115
±125
±145
±165
±180
±200
±219
±250
±290
±350
±395
V
JULY 2003 - REVISED NOVEMBER 2013
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
TISP4xxxJ3BJ Overvoltage Protector Series
Electrical Characteristics, TA = 25 °C (Unless Otherwise Noted)
Parameter
V(BO)
Ramp breakover voltage
I(BO)
Breakover current
IH
Holding current
dv/dt
Critical rate of rise of
off-state voltage
ID
Off-state current
Test Conditions
dv/dt = ±250 V/ms, RSOURCE = 300 Ω
±900
‘4125J3BJ thru ‘4219J3BJ
±800
‘4250J3BJ thru ‘4395J3BJ
±600
±150
Linear voltage ramp
Maximum ramp value < 0.85VDRM
±600
±5
V D = ±50 V
f = 1 MHz, Vd = 1 V rms, VD = -2 V
f = 1 MHz, Vd = 1 V rms, VD = -100 V
(see Note 3)
Unit
V
mA
mA
kV/µs
TA = 85 °C
f = 1 MHz, Vd = 1 V rms, VD = -50 V
NOTE:
‘4070J3BJ thru ‘4115J3BJ
IT = ±5 A, di/dt = ±30 mA/ms
f = 1 MHz, Vd = 1 V rms, VD = -1 V
Off-state capacitance
Typ Max
±77
±88
±104
±125
±135
±156
±177
±192
±212
±231
±263
±303
±364
±409
dv/dt ≤ ±1000 V/µs, Linear voltage ramp,
Maximum ramp value = ±500 V
di/dt = ±20 A/µs, Linear current ramp,
Maximum ramp value = ±10 A
f = 1 MHz, Vd = 1 V rms, VD = 0
CO
Min
‘4070J3BJ
‘4080J3BJ
‘4095J3BJ
‘4115J3BJ
‘4125J3BJ
‘4145J3BJ
‘4165J3BJ
‘4180J3BJ
‘4200J3BJ
‘4219J3BJ
‘4250J3BJ
‘4290J3BJ
‘4350J3BJ
‘4395J3BJ
±10
µA
‘4070J3BJ thru ‘4115J3BJ
195
235
‘4125J3BJ thru ‘4219J3BJ
120
145
‘4250J3BJ thru ‘4395J3BJ
105
125
‘4070J3BJ thru ‘4115J3BJ
180
215
‘4125J3BJ thru ‘4219J3BJ
110
132
‘4250J3BJ thru ‘4395J3BJ
95
115
‘4070J3BJ thru ‘4115J3BJ
165
200
‘4125J3BJ thru ‘4219J3BJ
100
120
‘4250J3BJ thru ‘4395J3BJ
90
105
‘4070J3BJ thru ‘4115J3BJ
85
100
‘4125J3BJ thru ‘4219J3BJ
50
60
‘4250J3BJ thru ‘4395J3BJ
42
50
‘4125J3BJ thru ‘4219J3BJ
40
50
‘4250J3BJ thru ‘4395J3BJ
35
40
Typ
Max
U nit
90
°C/W
pF
3. To avoid possible clipping, the TISP4125J3BJ is tested with VD = -98 V.
Thermal Characteristics
Parameter
RθJA
NOTE:
Junction to ambient thermal resistance
Test Conditions
Mi n
EIA/JESD51-3 PCB, IT = ITSM(1000)
(see Note 4)
4. EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths.
JULY 2003 - REVISED NOVEMBER 2013
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
TISP4xxxJ3BJ Overvoltage Protector Series
Parameter Measurement Information
+i
I PPSM
Quadrant I
Switching
Characteristic
ITSM
ITRM
IT
V(BO)
VT
I(BO)
IH
V (BR)M
V DRM
-v
I(BR)
V (BR)
I(BR)
IDRM
VD
ID
ID
VD
IDRM
+v
V DRM
V (BR)M
V (BR)
IH
I(BO)
V(BO)
VT
IT
ITRM
ITSM
Quadrant III
Switching
Characteristic
I PPSM
-i
PM-TISP4xxx-001-a
Figure 1. Voltage-Current Characteristic for T and R Terminals
All Measurements are Referenced to the R Terminal
JULY 2003 - REVISED NOVEMBER 2013
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
TISP4xxxJ3BJ Overvoltage Protector Series
Typical Characteristics
OFF-STATE CURRENT
vs
JUNCTION TEMPERATURE
100
TC4JAG
1.15
NORMALIZED BREAKOVER VOLTAGE
vs
JUNCTION TEMPERATURE TC4JAF
V D = ±50 V
Normalized Breakover Voltage
|I D| - Off-State Current - µA
10
1
0·1
0·01
1.10
1.05
1.00
0.95
0.90
0·001
-25
0
25
50
75
100 125
TJ - Junction Temperature - °C
-25
150
0
25
50
75
100 125
TJ - Junction Temperature - °C
Figure 2.
2.0
150
Figure 3.
NORMALIZED HOLDING CURRENT
vs
JUNCTION TEMPERATURE TC4JAD
1
NORMALIZED CAPACITANCE
vs
OFF-STATE VOLTAGE TC4JABB
0.9
Capacitance Normalized to VD = 0
Normalized Holding Current
TJ = 25 °C
V d = 1 Vrms
0.8
1.5
1.0
0.9
0.8
0.7
0.6
0.5
0.4
-25
0
25
50
75
100 125
TJ - Junction Temperature - °C
Figure 4.
150
0.7
0.6
0.5
0.4
0.3
0.2
0.5
1
2
3
5
10
20 30 50
V D - Off-state Voltage - V
Figure 5.
JULY 2003 - REVISED NOVEMBER 2013
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
100 150
TISP4xxxJ3BJ Overvoltage Protector Series
Rating and Thermal Characteristics
V DRM DERATING FACTOR
vs
MINIMUM AMBIENT TEMPERATURE
TI4JAA
40
V GEN = 600 Vrms, 50/60 Hz
RGEN = 1.4*VGEN/ITSM(t)
EIA/JESD51-2 ENVIRONMENT
EIA/JESD51-3 PCB
TA = 25 °C
30
20
0.99
0.98
15
10
9
8
7
6
5
0.97
0.96
0.95
4
'4070J3BJ thru '4115J3BJ
'4125J3BJ thru '4219J3BJ
0.94
3
2
0·1
TI4JADCa
1.00
Derating Factor
ITSM(t) - Non-Repetitive Peak On-State Current - A
NON-REPETITIVE PEAK ON-STATE CURRENT
vs
CURRENT DURATION
'4250J3BJ thru '4395J3BJ
1
10
100
t - Current Duration - s
Figure 6.
1000
0.93
-40 -35 -30 -25 -20 -15 -10 -5
0
5
10 15 20 25
TA(MIN) - Minimum Ambient Temperature - °C
Figure 7.
JULY 2003 - REVISED NOVEMBER 2013
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
TISP4xxxJ3BJ Overvoltage Protector Series
Applications Information
Protection
Polarity
Bridge
Ring
Detector
F1
R
High current
Fuse
Relay
C1
R1
C2
D1 D2
Th1
D3 D4
D5
D6
Hook
Switch
C3
DC
Sink
T
TISP
4350J3BJ
R2
T1
Signal
D7
OC1
Isolation Barrier
AI4MMABB
Figure 8. Typical Application Circuit
F1a
Tx
T
F1b
R
TISP4350J3BJ
F2a
d.c.
feed
Rx
T
F2b
R
TISP4350J3BJ
F1 & F2 = B1250T
AI4MMAB
Figure 9. Typical Application Circuit
“TISP” is a registered trademark of Bourns Ltd., a Bourns Company, in the United States and other countries, except that “TISP” is a registered trademark of Bourns, Inc. in China.“Bourns” is
a registered trademark of Bourns, Inc. in the U.S. and other countries.
JULY 2003 - REVISED NOVEMBER 2013
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.