Radiation Hardened Quad Differential Line Driver HS-26C31RH, HS-26C31EH Features The Intersil HS-26C31RH, HS-26C31EH are quad differential line drivers designed for digital data transmission over balanced lines and meets the requirements of EIA standard RS-422. Radiation hardened CMOS processing assures low power consumption, high speed, and reliable operation in the most severe radiation environments. • Electrically screened to SMD #5962-96663 The HS-26C31RH, HS-26C31EH accept CMOS levels and converts them to RS-422 compatible outputs. These circuits uses special outputs that enable the drivers to power-down without loading down the bus. Enable and disable pins allow several devices to be connected to the same data source and addressed independently. • EIA RS-422 compatible outputs (except for IOS) Specifications for Rad Hard QML devices are controlled by the Defense Logistics Agency Land and Maritime (DLA). The SMD numbers listed here must be used when ordering. Detailed Electrical Specifications for these devices are contained in SMD 5962-96663. A “hot-link” is provided on our homepage for downloading. • QML qualified per MIL-PRF-38535 requirements • 1.2 Micron radiation hardened CMOS - Total dose up to . . . . . . . . . . . . . . . . . . . . . . . . 300kRAD(Si) • Latchup free • CMOS inputs • High impedance outputs when disabled or powered down • Low power dissipation . . . . . . . . . . . . 2.75mW standby (max) • Single 5V supply • Low output impedance . . . . . . . . . . . . . . . . . . . . . .10Ω or less • Full -55°C to +125°C military temperature range Applications • Line transmitter for MIL-STD-1553 serial data bus Ordering Information ORDERING NUMBER (Note) INTERNAL MKT. NUMBER PART MARKING TEMP. RANGE (°C) PACKAGE (Pb-Free) PKG. DWG. # 5962F9666301QEC HS1-26C31RH-8 Q 5962F96 6630QEC -55 to +125 16 LD SBDIP D16.3 5962F9666301QXC HS9-26C31RH-8 Q 5962F96 66301QXC -55 to +125 16 LD FLATPACK K16.A 5962F9666301VEC HS1-26C31RH-Q Q 5962F96 66301VEC -55 to +125 16 LD SBDIP D16.3 5962F9666301VXC HS9-26C31RH-Q Q 5962F96 66301VXC -55 to +125 16 LD FLATPACK K16.A HS1-26C31RH/PROTO HS1-26C31RH/PROTO HS1- 26C31RH/PROTO -55 to +125 16 LD SBDIP D16.3 HS0-26C31RH/SAMPLE HS0-26C31RH/SAMPLE -55 to +125 Die HS9-26C31RH/PROTO HS9-26C31RH/PROTO -55 to +125 16 LD FLATPACK 5962F9666301V9A HS0-26C31RH-Q -55 to +125 Die 5962F9666303VEC HS1-26C31EH-Q Q 5962F96 66303VEC -55 to +125 16 LD SBDIP 5962F9666303VXC HS9-26C31EH-Q Q 5962F96 66303VXC -55 to +125 16 LD FLATPACK 5962F9666303V9A HS0-26C31EH-Q HS9- 26C31RH/PROTO K16.A D16.3 Die NOTE: These Intersil Pb-free Hermetic packaged products employ 100% Au plate - e4 termination finish, which is RoHS compliant and compatible with both SnPb and Pb-free soldering operations. January 8, 2013 FN3401.6 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 1-888-468-3774 | Copyright Intersil Americas Inc. 2011, 2013. All Rights Reserved Intersil (and design) is a trademark owned by Intersil Corporation or one of its subsidiaries. All other trademarks mentioned are the property of their respective owners. HS-26C31RH, HS-26C31EH Pin Configurations HS9-26C31RH, HS9-26C31EH (16 LD FLATPACK) CDFP4-F16 TOP VIEW HS1-26C31RH, HS1-26C31EH (16 LD SBDIP) CDIP2-T16 TOP VIEW 16 VDD AIN 1 16 VDD 15 DIN AO 2 15 DIN AO 3 14 DO AO 3 14 DO ENABLE 4 13 DO ENABLE 4 13 DO BO 5 12 ENABLE BO 6 11 CO BIN 7 10 CO GND 8 9 AIN 1 AO 2 BO 5 12 ENABLE 6 11 CO BIN 7 10 CO BO CIN 9 CIN GND 8 Logic Diagram ENABLE ENABLE DIN CIN BIN AIN DO DO CO CO BO BO AO AO For additional products, see www.intersil.com/en/products.html Intersil products are manufactured, assembled and tested utilizing ISO9000 quality systems as noted in the quality certifications found at www.intersil.com/en/support/qualandreliability.html Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see www.intersil.com 2 FN3401.6 January 8, 2013 HS-26C31RH, HS-26C31EH Die Characteristics Substrate: AVLSI1RA DIE DIMENSIONS: Backside Finish: 96.5 mils x 195 mils x 21 mils (2450 x 4950) Silicon INTERFACE MATERIALS: ASSEMBLY RELATED INFORMATION: Glassivation: Substrate Potential (Powered Up): Type: PSG (Phosphorus Silicon Glass) Thickness: 10kÅ ±1kÅ VDD ADDITIONAL INFORMATION: Metallization: Worst Case Current Density: M1: Mo/TiW Thickness: 5800Å M2: Al/Si/Cu (Top) Thickness: 10kÅ ±1kÅ <2.0x105A/cm2 Bond Pad Size: 110µmx100µm Metallization Mask Layout (15) DIN (16) VDD (1) AIN (16) VDD HS-26C31RH, HS-26C31EH AO (2) (14) DO AO (3) (13) DO ENABLE (4) (12) ENABLE 3 CIN (9) (10) CO GND (8) BO (6) GND (8) (11) CO BIN (7) BO (5) FN3401.6 January 8, 2013