HS-26CT31RH Data Sheet August 1999 Radiation Hardened Quad Differential Line Driver The Intersil HS-26CT31RH is a quad differential line driver designed for digital data transmission over balanced lines and meets the requirements of EIA standard RS-422. Radiation hardened CMOS processing assures low power consumption, high speed, and reliable operation in the most severe radiation environments. The HS-26CT31RH accepts TTL signal levels and converts them to RS-422 compatible outputs. This circuit uses special outputs that enable the drivers to power down without loading down the bus. Enable and disable pins allow several devices to be connected to the same data source and addressed independently. Specifications for Rad Hard QML devices are controlled by the Defense Supply Center in Columbus (DSCC). The SMD numbers listed here must be used when ordering. Detailed Electrical Specifications for these devices are contained in SMD 5962-95632. A “hot-link” is provided on our homepage for downloading. http://www.intersil.com/spacedefense/space.htm ENABLE DIN CIN • Electronically Screened to SMD #5962-95632 • QML Qualified Per MIL-PRF-38535 Requirements • 1.2 Micron Radiation Hardened CMOS • Total Dose Up to 300kRAD(Si) • Latchup Free • EIA RS-422 Compatible Outputs (Except for IOS) • TTL Compatible Inputs • High Impedance Outputs when Disabled or Powered Down • Low Power Dissipation 2.75mW Standby (Max) • Single 5V Supply • Low Output Impedance 10Ω or Less • Full -55oC to +125oC Military Temperature Range Pinouts HS1-26CT31RH (SBDIP) CD1P2-T16 TOP VIEW DO DO CO CO AIN BIN BO BO 2929.2 Features Logic Diagram ENABLE File Number AO AO AIN 1 16 VDD AO 2 15 DIN AO 3 14 DO ENABLE 4 13 DO BO 5 12 ENABLE BO 6 11 CO BIN 7 10 CO GND 8 9 CIN Ordering Information ORDERING NUMBER 5962F9563201QEC INTERNAL MKT. NUMBER HS1-26CT31RH-8 TEMP. RANGE (oC) HS9-26CT31RH (FLATPACK) CDFP4-F16 TOP VIEW -55 to 125 AIN 1 16 VDD AO 2 15 DIN 5962F9563201QXC HS9-26CT31RH-8 -55 to 125 5962F9563201V9A HS0-26CT31RH-Q 25 AO 3 14 DO ENABLE 4 13 DO BO 5 12 ENABLE 5962F9563201VEC HS1-26CT31RH-Q -55 to 125 5962F9563201VXC HS9-26CT31RH-Q -55 to 125 BO 6 11 CO -55 to 125 BIN 7 10 CO GND 8 9 CIN HS1-26CT31RH/PROTO HS1-26CT31RH/PROTO HS9-26CT31RH/PROTO HS9-26CT31RH/PROTO 1 -55 to 125 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 HS-26CT31RH Die Characteristics DIE DIMENSIONS: Substrate: 96.5 mils x 195 mils x 21 mils (2450 x 4950) AVLSI1RA Backside Finish: INTERFACE MATERIALS: Silicon Glassivation: ASSEMBLY RELATED INFORMATION: Type: PSG (Phosphorus Silicon Glass) Thickness: 10kÅ ±1kÅ Substrate Potential (Powered Up): VDD Metallization: ADDITIONAL INFORMATION: M1: Mo/TiW Thickness: 5800Å M2: Al/Si/Cu (Top) Thickness: 10kÅ ±1kÅ Worst Case Current Density: <2.0 x 105A/cm2 Bond Pad Size: 110µm x 100µm Metallization Mask Layout (15) DIN (16) VDD (16) VDD (1) AIN HS26CT31RH AO (2) (14) DO AO (3) (13) DO ENABLE (4) (12) ENABLE CIN (9) (10) CO GND (8) BO (6) GND (8) (11) CO BIN (7) BO (5) All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com 2