SQJ200EP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 20 V (D-S) 175 °C MOSFETs FEATURES PRODUCT SUMMARY • TrenchFET® power MOSFET N-CHANNEL 1 N-CHANNEL 2 20 20 RDS(on) (Ω) at VGS = 10 V 0.0088 0.0037 • 100 % Rg and UIS tested RDS(on) (Ω) at VGS = 4.5 V 0.0124 0.0050 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 VDS (V) ID (A) 20 Configuration 60 Dual N Package • AEC-Q101 qualified d PowerPAK SO-8L Dual Asymmetric D1 PowerPAK® SO-8L Dual Asymmetric D1 D2 G1 G2 D2 15 6. m m 1 13 5. m m Top View 4 G2 Bottom View 3 S2 1 2 S1 G1 S1 S2 N-Channel 1 MOSFET N-Channel 2 MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL N-CHANNEL 1 N-CHANNEL 2 Drain-Source Voltage VDS 20 20 Gate-Source Voltage VGS Continuous Drain Current a TC = 25 °C TC = 125 °C Continuous Source Current (Diode Conduction) Pulsed Drain Current b Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation b L = 0.1 mH TC = 25 °C TC = 125 °C Operating Junction and Storage Temperature Range ID ± 20 20 60 20 50 IS 20a 44 IDM 80 180 IAS 22 40 EAS 24.2 80 27 48 9 16 PD TJ, Tstg -55 to +175 Soldering Recommendations (Peak Temperature) e, f UNIT V A mJ W °C 260 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Case (Drain) SYMBOL PCB mount c N-CHANNEL 1 N-CHANNEL 2 RthJA 85 85 RthJC 5.5 3.1 UNIT °C/W Notes a. Package limited. b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. c. When mounted on 1" square PCB (FR4 material). d. Parametric verification ongoing. e. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. S15-2336-Rev. A, 05-Oct-15 Document Number: 67774 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ200EP www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage VDS VGS(th) IGSS VGS = 0 V, ID = 250 μA N-Ch 1 20 - - VGS = 0 V, ID = 250 μA N-Ch 2 20 - - VDS = VGS, ID = 250 μA N-Ch 1 1 1.5 2 VDS = VGS, ID = 250 μA N-Ch 2 1 1.5 2 N-Ch 1 - - ± 100 N-Ch 2 - - ± 100 VDS = 20 V N-Ch 1 - - 1 VDS = 0 V, VGS = ± 20 V VGS = 0 V Zero Gate Voltage Drain Current On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b IDSS ID(on) RDS(on) gfs VGS = 0 V VDS = 20 V N-Ch 2 - - 1 VGS = 0 V VDS = 20 V, TJ = 125 °C N-Ch 1 - - 50 VGS = 0 V VDS = 20 V, TJ = 125 °C N-Ch 2 - - 50 VGS = 0 V VDS = 20 V, TJ = 175 °C N-Ch 1 - - 150 VGS = 0 V VDS = 20 V, TJ = 175 °C N-Ch 2 - - 150 VGS = 10 V VDS ≥ 5 V N-Ch 1 20 - - VGS = 10 V VDS ≥ 5 V N-Ch 2 30 - - VGS = 10 V ID = 16 A N-Ch 1 - 0.0074 0.0088 VGS = 10 V ID = 20 A N-Ch 2 - 0.0031 0.0037 VGS = 10 V ID = 16 A, TJ = 125 °C N-Ch 1 - 0.0110 - VGS = 10 V ID = 20 A, TJ = 125 °C N-Ch 2 - 0.0036 - VGS = 10 V ID = 16 A, TJ = 175 °C N-Ch 1 - 0.0124 - VGS = 10 V ID = 20 A, TJ = 175 °C N-Ch 2 - 0.0063 - VGS = 4.5 V ID = 14 A N-Ch 1 - 0.0095 0.0124 VGS = 4.5 V ID = 19 A N-Ch 2 - 0.0039 0.0050 VDS = 10 V, ID = 10 A N-Ch 1 - 55 - VDS = 10 V, ID = 10 A N-Ch 2 - 60 - V nA μA A Ω S Dynamic b Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge c Qg Gate-Source Charge c Qgs Gate-Drain Charge c Qgd Gate Resistance S15-2336-Rev. A, 05-Oct-15 Rg VGS = 0 V VDS = 10 V, f = 1 MHz N-Ch 1 - 723 975 VGS = 0 V VDS = 10 V, f = 1 MHz N-Ch 2 - 1937 2525 VGS = 0 V VDS = 10 V, f = 1 MHz N-Ch 1 - 269 675 VGS = 0 V VDS = 10 V, f = 1 MHz N-Ch 2 - 655 870 VGS = 0 V VDS = 10 V, f = 1 MHz N-Ch 1 - 112 340 VGS = 0 V VDS = 10 V, f = 1 MHz N-Ch 2 - 264 350 VGS = 10 V VDS = 10 V, ID = 20 A N-Ch 1 - 12 18 VGS = 10 V VDS = 10 V, ID = 60 A N-Ch 2 - 29 43 VGS = 10 V VDS = 10 V, ID = 20 A N-Ch 1 - 1.6 - VGS = 10 V VDS = 10 V, ID = 60 A N-Ch 2 - 4.1 - VGS = 10 V VDS = 10 V, ID = 20 A N-Ch 1 - 2.5 - VGS = 10 V VDS = 10 V, ID = 60 A N-Ch 2 - 6 - N-Ch 1 1.1 2.3 3.5 N-Ch 2 0.4 1 1.4 f = 1 MHz pF nC Ω Document Number: 67774 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ200EP www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER Turn-On Delay Time c Rise Time c Turn-Off Delay Time c Fall Time c SYMBOL td(on) tr td(off) tf TEST CONDITIONS MIN. TYP. MAX. VDD = 6 V, RL = 0.3 Ω ID ≅ 20 A, VGEN = 10 V, Rg = 1 Ω N-Ch 1 - 4 6 VDD = 6 V, RL = 0.1 Ω ID ≅ 60 A, VGEN = 10 V, Rg = 1 Ω N-Ch 2 - 7 9 VDD = 6 V, RL = 0.3 Ω ID ≅ 20 A, VGEN = 10 V, Rg = 1 Ω N-Ch 1 - 18 23 VDD = 6 V, RL = 0.1 Ω ID ≅ 60 A, VGEN = 10 V, Rg = 1 Ω N-Ch 2 - 17 23 VDD = 6 V, RL = 0.3 Ω ID ≅ 20 A, VGEN = 10 V, Rg = 1 Ω N-Ch 1 - 13 17 VDD = 6 V, RL = 0.1 Ω ID ≅ 60 A, VGEN = 10 V, Rg = 1 Ω N-Ch 2 - 19 25 VDD = 6 V, RL = 0.3 Ω ID ≅ 20 A, VGEN = 10 V, Rg = 1 Ω N-Ch 1 - 13 17 VDD = 6 V, RL = 0.1 Ω ID ≅ 60 A, VGEN = 10 V, Rg = 1 Ω N-Ch 2 - 14 28 N-Ch 1 - - 80 N-Ch 2 - - 180 IF = 10 A, VGS = 0 V N-Ch 1 - 0.8 1.2 IF = 20 A, VGS = 0 V N-Ch 2 - 0.8 1.2 UNIT ns Source-Drain Diode Ratings and Characteristics b Pulsed Currenta ISM Forward Voltage VSD A V Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S15-2336-Rev. A, 05-Oct-15 Document Number: 67774 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ200EP www.vishay.com Vishay Siliconix N-CHANNEL 1 TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 50 10 VGS = 10 V thru 4 V 8 ID - Drain Current (A) ID - Drain Current (A) 40 30 VGS = 3 V 20 10 6 TC = 25 °C 4 2 TC = 125 °C TC = -55 °C VGS = 2 V 0 0 0 2 4 6 8 VDS - Drain-to-Source Voltage (V) 10 0 1 2 3 4 VGS - Gate-to-Source Voltage (V) Transfer Characteristics 50 100 40 80 gfs - Transconductance (S) ID - Drain Current (A) Output Characteristics 30 TC = 25 °C 20 TC = 125 °C 10 5 TC = -55 °C 60 TC = 25 °C 40 TC = 125 °C 20 TC = -55 °C 0 0 0 2 4 6 8 VGS - Gate-to-Source Voltage (V) 0 10 3 6 9 ID - Drain Current (A) 0.025 1000 0.020 800 0.015 VGS = 4.5 V 0.010 VGS = 10 V 0.005 15 Transconductance C - Capacitance (pF) RDS(on) - On-Resistance (Ω) Transfer Characteristics 12 Ciss 600 400 Coss 200 Crss 0 0.000 0 10 20 30 ID - Drain Current (A) 40 On-Resistance vs. Drain Current S15-2336-Rev. A, 05-Oct-15 50 0 5 10 15 20 VDS - Drain-to-Source Voltage (V) Capacitance Document Number: 67774 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ200EP www.vishay.com Vishay Siliconix N-CHANNEL 1 TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 0.05 2.0 0.04 1.7 RDS(on) - On-Resistance (Ω) RDS(on) - On-Resistance (Normalized) ID = 14 A VGS =10 V 1.4 1.1 VGS = 4.5 V 0.8 0.03 0.02 TJ = 150 °C 0.01 TJ = 25 °C 0.5 -50 0.00 -25 0 25 50 75 100 125 TJ - Junction Temperature (°C) 150 0 175 0.5 10 0.1 VGS(th) Variance (V) IS - Source Current (A) 100 TJ = 150 °C TJ = 25 °C 0.1 0.01 ID = 5 mA -0.3 -0.7 ID = 250 μA -1.1 0.001 0.0 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) 1.2 -1.5 -50 -25 0 25 50 75 100 TJ - Temperature (°C) Source Drain Diode Forward Voltage 125 150 175 Threshold Voltage 10 30 ID = 20 A VDS = 10 V VGS - Gate-to-Source Voltage (V) ID = 1 mA VDS - Drain-to-Source Voltage (V) 10 On-Resistance vs. Gate-to-Source Voltage On-Resistance vs. Junction Temperature 1 2 4 6 8 VGS - Gate-to-Source Voltage (V) 28 26 24 22 8 6 4 2 0 20 -50 -25 0 25 50 75 100 125 TJ - Junction Temperature (°C) 150 175 Drain Source Breakdown vs. Junction Temperature S15-2336-Rev. A, 05-Oct-15 0 3 6 9 12 Qg - Total Gate Charge (nC) Gate Charge Document Number: 67774 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ200EP www.vishay.com Vishay Siliconix N-CHANNEL 1 TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 100 100 µs IDM Limited ID - Drain Current (A) 10 1 ms ID Limited 1 10 ms 100 ms, 1 s, 10 s, DC Limited by RDS(on)* 0.1 TC = 25 °C Single Pulse 0.01 0.01 BVDSS Limited 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 85 °C/W 0.02 3. T JM - TA = PDMZthJA(t) Single Pulse 0.01 10- 4 10- 3 4. Surface Mounted 10- 2 10- 1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient S15-2336-Rev. A, 05-Oct-15 Document Number: 67774 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ200EP www.vishay.com Vishay Siliconix N-CHANNEL 1 TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 Square Wave Pulse Duration (s) 10 -1 1 Normalized Thermal Transient Impedance, Junction-to-Case Note • The characteristics shown in the graph: - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) is given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. S15-2336-Rev. A, 05-Oct-15 Document Number: 67774 7 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ200EP www.vishay.com Vishay Siliconix N-CHANNEL 2 TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 10 50 VGS = 10 V thru 4 V 8 VGS = 3 V ID - Drain Current (A) ID - Drain Current (A) 40 30 20 6 TC = 25 °C 4 2 10 TC = 125 °C TC = -55 °C VGS = 2 V 0 0 0 2 4 6 8 VDS - Drain-to-Source Voltage (V) 0 10 1 2 3 4 VGS - Gate-to-Source Voltage (V) 5 Transfer Characteristics Output Characteristics 50 100 40 80 gfs - Transconductance (S) ID - Drain Current (A) TC = -55 °C 30 TC = 25 °C 20 10 TC = 25 °C 60 TC = 125 °C 40 20 TC = 125 °C TC = -55 °C 0 0 1 2 3 4 VGS - Gate-to-Source Voltage (V) 0 5 0 3 Transfer Characteristics 12 15 Transconductance 3000 0.015 2500 C - Capacitance (pF) 0.012 RDS(on) - On-Resistance (Ω) 6 9 ID - Drain Current (A) 0.009 0.006 VGS = 4.5 V 0.003 Ciss 2000 1500 1000 Coss 500 VGS = 10 V Crss 0 0.000 0 10 20 30 ID - Drain Current (A) 40 On-Resistance vs. Drain Current S15-2336-Rev. A, 05-Oct-15 50 0 5 10 15 VDS - Drain-to-Source Voltage (V) 20 Capacitance Document Number: 67774 8 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ200EP www.vishay.com Vishay Siliconix N-CHANNEL 2 TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 0.05 2.0 0.04 1.7 RDS(on) - On-Resistance (Ω) RDS(on) - On-Resistance (Normalized) ID = 14 A VGS =10 V 1.4 1.1 VGS = 4.5 V 0.03 TJ = 150 °C 0.02 0.8 0.01 0.5 0.00 TJ = 25 °C -50 -25 0 25 50 75 100 125 TJ - Junction Temperature (°C) 150 0 175 0.5 10 0.1 VGS(th) Variance (V) IS - Source Current (A) 100 TJ = 150 °C TJ = 25 °C 0.1 0.01 ID = 5 mA -0.3 ID = 250 μA -0.7 -1.1 0.001 -1.5 0.0 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) 1.2 -50 -25 0 Source Drain Diode Forward Voltage 25 50 75 100 TJ - Temperature (°C) 125 150 175 Threshold Voltage 10 30 VGS - Gate-to-Source Voltage (V) ID = 1 mA VDS - Drain-to-Source Voltage (V) 10 On-Resistance vs. Gate-to-Source Voltage On-Resistance vs. Junction Temperature 1 2 4 6 8 VGS - Gate-to-Source Voltage (V) 28 26 24 22 8 6 4 2 0 20 -50 -25 0 25 50 75 100 125 TJ - Junction Temperature (°C) 150 175 Drain Source Breakdown vs. Junction Temperature S15-2336-Rev. A, 05-Oct-15 ID = 60 A VDS = 10 V 0 5 10 15 20 25 30 Qg - Total Gate Charge (nC) Gate Charge Document Number: 67774 9 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ200EP www.vishay.com Vishay Siliconix N-CHANNEL 2 TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 1000 IDM Limited ID - Drain Current (A) 100 Limited by RDS(on)* ID Limited 10 1 ms 10 ms 100 ms, 1 s, 10 s, DC 1 TC = 25 °C Single Pulse BVDSS Limited 0.1 0.01 0.1 1 10 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 100 Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 85 °C/W 0.02 3. T JM - TA = PDMZthJA(t) Single Pulse 0.01 10- 4 10- 3 4. Surface Mounted 10- 2 10- 1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient S15-2336-Rev. A, 05-Oct-15 Document Number: 67774 10 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ200EP www.vishay.com Vishay Siliconix N-CHANNEL 2 TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 Square Wave Pulse Duration (s) 10 -1 1 Normalized Thermal Transient Impedance, Junction-to-Case Note • The characteristics shown in the graph: - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) is given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?67774. S15-2336-Rev. A, 05-Oct-15 Document Number: 67774 11 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix PowerPAK® SO-8L Assymetric Case Outline b2 D5 K1 D4 D3 D2 A1 b b1 e D1 θ b3 K2 0.25 gauge line D PIN 1 PIN 1 DIM. A A1 b b1 b2 b3 c D D1 D2 D3 D4 D5 e E E1 E2 E3 F L L1 K K1 K2 W W1 W2 W3 W4 θ DWG: 6009 MIN. 1.00 0.00 0.33 0.44 4.80 0.04 0.20 5.00 4.80 3.63 0.81 1.98 1.47 1.20 6.05 4.27 2.75 1.89 0.05 0.62 0.92 0.41 0.64 0.54 0.13 0.31 2.72 2.86 0.41 5° MILLIMETERS NOM. 1.07 0.06 0.41 0.51 4.90 0.12 0.25 5.13 4.90 3.73 0.91 2.08 1.57 1.27 6.15 4.37 2.85 1.99 0.12 0.72 1.07 0.51 0.74 0.64 0.23 0.41 2.82 2.96 0.51 10° MAX. 1.14 0.13 0.48 0.58 5.00 0.20 0.30 5.25 5.00 3.83 1.01 2.18 1.67 1.34 6.25 4.47 2.95 2.09 0.19 0.82 1.22 0.61 0.84 0.74 0.33 0.51 2.92 3.06 0.61 12° MIN. 0.039 0.000 0.013 0.017 0.189 0.002 0.008 0.197 0.189 0.143 0.032 0.078 0.058 0.047 0.238 0.168 0.108 0.074 0.002 0.024 0.036 0.016 0.025 0.021 0.005 0.012 0.107 0.113 0.016 5° INCHES NOM. 0.042 0.003 0.016 0.020 0.193 0.005 0.010 0.202 0.193 0.147 0.036 0.082 0.062 0.050 0.242 0.172 0.112 0.078 0.005 0.028 0.042 0.020 0.029 0.025 0.009 0.016 0.111 0.117 0.020 10° MAX. 0.045 0.005 0.019 0.023 0.197 0.008 0.012 0.207 0.197 0.151 0.040 0.086 0.066 0.053 0.246 0.176 0.116 0.082 0.007 0.032 0.048 0.024 0.033 0.029 0.013 0.020 0.115 0.120 0.024 12° Note • Millimeters will govern Document Number: 62714 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 C14-0057-Rev. D, 07-Apr-14 PAD Pattern www.vishay.com Vishay Siliconix RECOMMENDED MINIMUM PADs FOR PowerPAK® SO-8L DUAL ASYMMETRIC Recommended Minimum Pads Dimensions in mm [inches] Revision: 07-Mar-13 1 Document Number: 64477 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000