SQJ488EP www.vishay.com Vishay Siliconix Automotive N-Channel 100 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET® power MOSFET 100 RDS(on) (Ω) at VGS = 10 V 0.0210 RDS(on) (Ω) at VGS = 4.5 V 0.0258 ID (A) • AEC-Q101 qualified d • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 42 Configuration Single PowerPAK® SO-8L Single D D 6. 15 m m m 1 13 m 4 G 5. Top View 3 S 2 S 1 S G N-Channel MOSFET S Bottom View ORDERING INFORMATION Package PowerPAK SO-8L Lead (Pb)-free and Halogen-free SQJ488EP-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ± 20 Continuous Drain Current TC = 25 °C a TC = 125 °C Continuous Source Current (Diode Conduction) a Pulsed Drain Current b Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation b L = 0.1 mH TC = 25 °C TC = 125 °C Operating Junction and Storage Temperature Range ID 24 60 IDM 170 IAS 5.8 EAS 1.68 TJ, Tstg Soldering Recommendations (Peak Temperature) e, f V 42 IS PD UNIT 83 27 -55 to +175 260 A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Case (Drain) PCB Mount c SYMBOL LIMIT RthJA 65 RthJC 1.8 UNIT °C/W Notes a. Package limited. b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. c. When mounted on 1" square PCB (FR-4 material). d. Parametric verification ongoing. e. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. S14-2219-Rev. B, 10-Nov-14 Document Number: 62846 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ488EP www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS VGS = 0, ID = 250 μA 100 - - VGS(th) VDS = VGS, ID = 250 μA 1.5 2.0 2.5 Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V - - ± 100 VGS = 0 V VDS = 100 V - - 1 Zero Gate Voltage Drain Current IDSS VGS = 0 V VDS = 100 V, TJ = 125 °C - - 50 VGS = 0 V VDS = 100 V, TJ = 175 °C - - 150 On-State Drain Current a ID(on) VGS = 10 V VDS ≥ 5 V 30 - - VGS = 10 V ID = 7.1 A - 0.0176 0.0210 VGS = 4.5 V ID = 6.4 A - 0.0215 0.0258 VGS = 10 V ID = 7.1 A, TJ = 125 °C - - 0.0360 VGS = 10 V ID = 7.1 A, TJ = 175 °C - - 0.0450 - 28 - Gate-Source Threshold Voltage Drain-Source On-State Resistance a Forward Transconductance b RDS(on) gfs VDS = 15 V, ID = 7.1 A V nA μA A Ω S Dynamic b - 782 978 - 372 462 Crss - 44 55 Qg - 18 27 - 2 - Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Total Gate Charge c Gate-Source Charge Qgs Charge c Qgd Gate-Drain Gate Resistance Turn-On Delay Time c Rise Time c Turn-Off Delay Time c Fall Time c Rg VGS = 0 V VDS = 50 V, f = 1 MHz VGS = 10 V VDS = 50 V, ID = 15 A td(off) nC - 4.7 - f = 1 MHz 1.1 2.2 3.3 - 4 6 VDD = 50 V, RL = 5 Ω ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω - 11 16 - 20 30 - 4.6 7 - - 128 A - 0.78 1.2 V td(on) tr pF tf Ω ns Source-Drain Diode Ratings and Characteristics b Pulsed Current a ISM Forward Voltage VSD IF = 4.7 A, VGS = 0 Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S14-2219-Rev. B, 10-Nov-14 Document Number: 62846 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ488EP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 80 10 VGS = 10 V thru 5 V ID = 15 A VGS = 4 V 48 8 VGS - Gate-to-Source Voltage (V) ID - Drain Current (A) 64 32 16 6 4 2 0 0 0 3 6 9 12 15 0 12 16 VDS - Drain-to-Source Voltage (V) Output Characteristics Gate Charge 20 80 1.00 64 0.80 ID - Drain Current (A) ID - Drain Current (A) 8 Qg - Total Gate Charge (nC) 1.20 TC = 25 °C 0.60 0.40 TC = 125 °C TC = 25 °C 48 32 TC = 125 °C 16 0.20 TC=-55°C TC=-55°C 0.00 0 0 1 2 3 4 5 0 2 4 6 8 VGS - Gate-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Transfer Characteristics Transfer Characteristics 10 1500 0.05 1200 0.04 VGS = 4.5 V C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 4 0.03 0.02 VGS = 10 V 900 Ciss 600 Coss 0.01 300 0.00 0 Crss 0 16 32 48 64 ID - Drain Current (A) On-Resistance vs. Drain Current S14-2219-Rev. B, 10-Nov-14 80 0 20 40 60 80 100 VDS - Drain-to-Source Voltage (V) Capacitance Document Number: 62846 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ488EP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 0.075 ID = 10 A 2.1 0.060 RDS(on) - On-Resistance (Ω) RDS(on) - On-Resistance (Normalized) 2.5 VGS = 4.5 V 1.7 VGS = 10 V 1.3 0.9 0.045 TJ = 150 °C 0.030 0.015 TJ = 25 °C 0.5 0.000 - 50 - 25 0 25 50 75 100 125 150 175 0 2 4 6 8 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Junction Temperature On-Resistance vs. Gate-to Source Voltage 100 50 TC = 25 °C TC = - 55 °C 40 TJ = 150 °C gfs - Transconductance (S) IS - Source Current (A) 10 1 0.1 TJ = 25 °C 0.01 0.001 0.0 0.2 0.4 0.6 0.8 1.0 30 TC = 125 °C 20 10 0 1.2 0 5 10 15 20 VSD - Source-to-Drain Voltage (V) ID - Drain Current (A) Source Drain Diode Forward Voltage Transconductance 0.6 25 126 VDS - Drain-to-Source Voltage (V) 0.3 VGS(th) Variance (V) 10 TJ - Junction Temperature (°C) 0.0 ID = 5 mA - 0.3 ID = 250 μA - 0.6 - 0.9 - 1.2 - 50 - 25 0 25 50 75 100 TJ - Temperature (°C) Threshold Voltage S14-2219-Rev. B, 10-Nov-14 125 150 175 120 ID = 1 mA 114 108 102 96 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) Drain Source Breakdown vs. Junction Temperature Document Number: 62846 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ488EP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 1000 IDM Limited ID - Drain Current (A) 100 Limited by RDS(on)* 100 μs 10 1 ms ID Limited 1 10 ms 100 ms, 1 s, 10 s, DC TC = 25 °C Single Pulse 0.1 0.01 0.01 BVDSS Limited 0.1 1 10 100 1000 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 65 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient S14-2219-Rev. B, 10-Nov-14 Document Number: 62846 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ488EP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 - 4 10 - 3 10 - 2 10 - 1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Case Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?62846. S14-2219-Rev. B, 10-Nov-14 Document Number: 62846 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Ordering Information www.vishay.com Vishay Siliconix PowerPAK® SO-8L Ordering codes for the SQ rugged series power MOSFETs in the PowerPAK SO-8L package: DATASHEET PART NUMBER OLD ORDERING CODE a NEW ORDERING CODE SQJ200EP - SQJ200EP-T1_GE3 SQJ202EP - SQJ202EP-T1_GE3 SQJ401EP SQJ401EP-T1-GE3 SQJ401EP-T1_GE3 SQJ402EP SQJ402EP-T1-GE3 SQJ402EP-T1_GE3 SQJ403EEP SQJ403EEP-T1-GE3 SQJ403EEP-T1_GE3 SQJ403EP - SQJ403EP-T1_GE3 SQJ410EP SQJ410EP-T1-GE3 SQJ410EP-T1_GE3 SQJ412EP SQJ412EP-T1-GE3 SQJ412EP-T1_GE3 SQJ422EP SQJ422EP-T1-GE3 SQJ422EP-T1_GE3 SQJ431EP SQJ431EP-T1-GE3 SQJ431EP-T1_GE3 SQJ443EP SQJ443EP-T1-GE3 SQJ443EP-T1_GE3 SQJ446EP - SQJ446EP-T1_GE3 SQJ456EP SQJ456EP-T1-GE3 SQJ456EP-T1_GE3 SQJ459EP - SQJ459EP-T1_GE3 SQJ460AEP - SQJ460AEP-T1_GE3 SQJ461EP SQJ461EP-T1-GE3 SQJ461EP-T1_GE3 SQJ463EP SQJ463EP-T1-GE3 SQJ463EP-T1_GE3 SQJ465EP SQJ465EP-T1-GE3 SQJ465EP-T1_GE3 SQJ469EP SQJ469EP-T1-GE3 SQJ469EP-T1_GE3 SQJ486EP SQJ486EP-T1-GE3 SQJ486EP-T1_GE3 SQJ488EP SQJ488EP-T1-GE3 SQJ488EP-T1_GE3 SQJ500AEP SQJ500AEP-T1-GE3 SQJ500AEP-T1_GE3 SQJ840EP SQJ840EP-T1-GE3 SQJ840EP-T1_GE3 SQJ844AEP SQJ844AEP-T1-GE3 SQJ844AEP-T1_GE3 SQJ850EP SQJ850EP-T1-GE3 SQJ850EP-T1_GE3 SQJ858AEP SQJ858AEP-T1-GE3 SQJ858AEP-T1_GE3 SQJ886EP SQJ886EP-T1-GE3 SQJ886EP-T1_GE3 SQJ910AEP SQJ910AEP-T1-GE3 SQJ910AEP-T1_GE3 SQJ912AEP SQJ912AEP-T1-GE3 SQJ912AEP-T1_GE3 SQJ940EP SQJ940EP-T1-GE3 SQJ940EP-T1_GE3 SQJ942EP SQJ942EP-T1-GE3 SQJ942EP-T1_GE3 SQJ951EP SQJ951EP-T1-GE3 SQJ951EP-T1_GE3 SQJ952EP - SQJ952EP-T1_GE3 SQJ956EP SQJ956EP-T1-GE3 SQJ956EP-T1_GE3 SQJ960EP SQJ960EP-T1-GE3 SQJ960EP-T1_GE3 SQJ963EP SQJ963EP-T1-GE3 SQJ963EP-T1_GE3 SQJ968EP SQJ968EP-T1-GE3 SQJ968EP-T1_GE3 SQJ980AEP SQJ980AEP-T1-GE3 SQJ980AEP-T1_GE3 SQJ992EP SQJ992EP-T1-GE3 SQJ992EP-T1_GE3 Note a. Old ordering code is obsolete and no longer valid for new orders Revision: 21-Oct-15 Document Number: 65804 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix PowerPAK® SO-8L Case Outline for all Parts Document Number: 66934 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Revision: 07-Sep-15 Package Information www.vishay.com DIM. Vishay Siliconix MILLIMETERS INCHES MIN. NOM. MAX. MIN. NOM. MAX. A 1.00 1.07 1.14 0.039 0.042 0.045 A1 0.00 - 0.127 0.00 - 0.005 b 0.33 0.41 0.48 0.013 0.016 0.019 b1 0.44 0.51 0.58 0.017 0.020 0.023 b2 4.80 4.90 5.00 0.189 0.193 0.197 b3 0.094 0.004 b4 0.47 0.019 c 0.20 0.25 0.30 0.008 0.010 0.012 D 5.00 5.13 5.25 0.197 0.202 0.207 D1 4.80 4.90 5.00 0.189 0.193 0.197 D2 3.86 3.96 4.06 0.152 0.156 0.160 D3 1.63 1.73 1.83 0.064 0.068 0.072 e 1.27 BSC 0.050 BSC E 6.05 6.15 6.25 0.238 0.242 0.246 E1 4.27 4.37 4.47 0.168 0.172 0.176 E2 2.75 2.85 2.95 0.108 0.112 0.116 F - - 0.15 - - 0.006 L 0.62 0.72 0.82 0.024 0.028 0.032 L1 0.92 1.07 1.22 0.036 0.042 0.048 K 0.51 0.020 W 0.23 0.009 W1 0.41 0.016 W2 2.82 0.111 W3 q 2.96 0° - 0.117 10° 0° - 10° ECN: C15-1203-Rev. A, 07-Sep-15 DWG: 6044 Note • Millimeters will gover Document Number: 66934 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Revision: 07-Sep-15 PAD Pattern www.vishay.com Vishay Siliconix RECOMMENDED MINIMUM PAD FOR PowerPAK® SO-8L SINGLE 5.000 (0.197) 0.510 (0.020) 2.310 (0.091) 4.061 (0.160) 0.595 (0.023) 6.250 (0.246) 8.250 (0.325) 3.630 (0.143) 0.610 (0.024) 0.410 (0.016) 2.715 (0.107) 0.860 (0.034) 1.291 (0.051) 0.710 (0.028) 0.820 (0.032) 1.905 (0.075) 1.270 (0.050) 7.250 (0.285) Recommended Minimum Pads Dimensions in mm (inches) Revision: 07-Feb-12 1 Document Number: 63818 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000