VISHAY SQJ942EP

SQJ942EP
www.vishay.com
Vishay Siliconix
Automotive Dual N-Channel 40 V (D-S) 175 °C MOSFETs
FEATURES
PRODUCT SUMMARY
N-CHANNEL 1 N-CHANNEL 2
VDS (V)
40
40
RDS(on) () at VGS = 10 V
0.022
0.011
RDS(on) () at VGS = 4.5 V
0.026
0.013
ID (A)
15
Configuration
45
Dual N
•
•
•
•
TrenchFET® Power MOSFET
AEC-Q101 Qualifiedd
100 % Rg and UIS Tested
Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
PowerPAK® SO-8L Asymmetric
5.1
D1
D2
3m
m
m
.15
m
6
D2
G1
G2
D1
4
G2
3
S2
2
G1
S1
1
S1
S2
N-Channel 1 MOSFET
Bottom View
N-Channel 2 MOSFET
ORDERING INFORMATION
Package
PowerPAK SO-8L Dual Asymmetric
Lead (Pb)-free and Halogen-free
SQJ942EP-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
N-CHANNEL 1
N-CHANNEL 2
Drain-Source Voltage
VDS
40
40
Gate-Source Voltage
VGS
Continuous Drain Currenta
TC = 25 °C
TC = 125 °C
Continuous Source Current (Diode Conduction)a
Pulsed Drain Currentb
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipationb
L = 0.1 mH
TC = 25 °C
TC = 125 °C
Operating Junction and Storage Temperature Range
ID
± 20
15
45
15
32
IS
15
44
IDM
60
180
IAS
19
27
EAS
18.5
36.5
17
48
6
16
PD
TJ, Tstg
- 55 to + 175
Soldering Recommendations (Peak Temperature)e, f
UNIT
V
A
mJ
W
°C
260
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Case (Drain)
PCB Mountc
SYMBOL
N-CHANNEL 1
N-CHANNEL 2
RthJA
75
70
RthJC
9
3.1
UNIT
°C/W
Notes
a. Package limited.
b. Pulse test; pulse width  300 μs, duty cycle  2 %.
c. When mounted on 1" square PCB (FR4 material).
d. Parametric verification ongoing.
e. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
S13-0708-Rev. B, 01-Apr-13
Document Number: 62669
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ942EP
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductanceb
VDS
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
VGS = 0 V, ID = 250 μA
N-Ch 1
40
-
-
VGS = 0 V, ID = 250 μA
N-Ch 2
40
-
-
VDS = VGS, ID = 250 μA
N-Ch 1
1.3
1.8
2.3
VDS = VGS, ID = 250 μA
N-Ch 2
1.3
1.8
2.3
N-Ch 1
-
-
± 100
N-Ch 2
-
-
± 100
VDS = 0 V, VGS = ± 20 V
VGS = 0 V
VDS 40 V
N-Ch 1
-
-
1
VGS = 0 V
VDS = - 40 V
N-Ch 2
-
-
1
VGS = 0 V
VDS = 40 V, TJ = 125 °C
N-Ch 1
-
-
50
VGS = 0 V
VDS = 40 V, TJ = 125 °C
N-Ch 2
-
-
50
VGS = 0 V
VDS = 40 V, TJ = 175 °C
N-Ch 1
-
-
150
VGS = 0 V
VDS = 40 V, TJ = 175 °C
N-Ch 2
-
-
150
VGS = 10 V
VDS 5 V
N-Ch 1
30
-
-
VGS = 10 V
VDS 5 V
N-Ch 2
30
-
-
VGS = 10 V
ID = 7.8 A
N-Ch 1
-
0.018
0.022
VGS = 10 V
ID = 10.1 A
N-Ch 2
-
0.009
0.011
VGS = 10 V
ID = 7.8 A, TJ = 125 °C
N-Ch 1
-
-
0.032
VGS = 10 V
ID = 10.1 A, TJ = 125 °C
N-Ch 2
-
-
0.017
VGS = 10 V
ID = 7.8 A, TJ = 175 °C
N-Ch 1
-
-
0.038
VGS = 10 V
ID = 10.1 A, TJ = 175 °C
N-Ch 2
-
-
0.020
VGS = 4.5 V
ID = 7.1 A
N-Ch 1
-
0.022
0.026
VGS = 4.5 V
ID = 9.3 A
0.013
gfs
N-Ch 2
-
0.011
VDS = 15 V, ID = 7.8 A
N-Ch 1
-
46
-
VDS = 15 V, ID = 10.1 A
N-Ch 2
-
73
-
V
nA
μA
A

S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Chargec
Qg
Gate-Source Chargec
Qgs
Gate-Drain Chargec
Qgd
Gate Resistance
VGS = 0 V
VDS = 20 V, f = 1 MHz
N-Ch 1
-
647
809
VGS = 0 V
VDS = 20 V, f = 1 MHz
N-Ch 2
-
1161
1451
VGS = 0 V
VDS = 20 V, f = 1 MHz
N-Ch 1
-
105
131
VGS = 0 V
VDS = 20 V, f = 1 MHz
N-Ch 2
-
178
222
VGS = 0 V
VDS = 20 V, f = 1 MHz
N-Ch 1
-
42
53
VGS = 0 V
VDS = 20 V, f = 1 MHz
N-Ch 2
-
68
85
VGS = 10 V
VDS = 20 V, ID = 16 A
N-Ch 1
-
13.1
19.7
VGS = 10 V
VDS = 20 V, ID = 6 A
N-Ch 2
-
22.5
33.8
VGS = 10 V
VDS = 20 V, ID = 16 A
N-Ch 1
-
2.12
-
VGS = 10 V
VDS = 20 V, ID = 6 A
N-Ch 2
-
3.35
-
VGS = 10 V
VDS = 20 V, ID = 16 A
N-Ch 1
-
1.84
-
VGS = 10 V
VDS = 20 V, ID = 6 A
N-Ch 2
-
3.14
-
N-Ch 1
1.5
3.02
5
N-Ch 2
2.05
4.11
7
Rg
f = 1 MHz
pF
nC

Notes
a. Pulse test; pulse width  300 μs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
S13-0708-Rev. B, 01-Apr-13
Document Number: 62669
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ942EP
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
Turn-On Delay
SYMBOL
Timec
Rise Timec
Turn-Off Delay Timec
Fall
Timec
td(on)
tr
td(off)
tf
TEST CONDITIONS
MIN.
TYP.
MAX.
N-Ch 1
-
33
50
VDD = 20 V, RL = 20 
ID  1 A, VGEN = 10 V, Rg = 1 
N-Ch 2
-
40
60
VDD = 20 V, RL = 20 
ID  1 A, VGEN = 10 V, Rg = 1 
N-Ch 1
-
25
38
VDD = 20 V, RL = 20 
ID  1 A, VGEN = 10 V, Rg = 1 
N-Ch 2
-
31
46
VDD = 20 V, RL = 20 
ID  1 A, VGEN = 10 V, Rg = 1 
N-Ch 1
-
29
43
VDD = 20 V, RL = 20 
ID  1 A, VGEN = 10 V, Rg = 1 
N-Ch 2
-
52
78
VDD = 20 V, RL = 20 
ID  1 A, VGEN = 10 V, Rg = 1 
N-Ch 1
-
12
18
VDD = 20 V, RL = 20 
ID  1 A, VGEN = 10 V, Rg = 1 
N-Ch 2
-
16
24
N-Ch 1
-
-
60
N-Ch 2
-
-
180
IS = 5.2 A
N-Ch 1
-
0.8
1.2
IS = 6.8 A
N-Ch 2
-
0.8
1.2
VDD = 20 V, RL = 20 
ID  1 A, VGEN = 10 V, Rg = 1 
UNIT
ns
Source-Drain Diode Ratings and Characteristicsb
Pulsed Currenta
ISM
Forward Voltage
VSD
A
V
Notes
a. Pulse test; pulse width  300 μs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S13-0708-Rev. B, 01-Apr-13
Document Number: 62669
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ942EP
www.vishay.com
Vishay Siliconix
N-CHANNEL 1 TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
40
40
VGS = 10 V thru 4 V
32
ID - Drain Current (A)
ID - Drain Current (A)
32
24
16
8
24
16
TC = 25 °C
8
VGS = 3 V
0
0
0
2
4
6
8
VDS - Drain-to-Source Voltage (V)
0
10
1
2
3
4
VGS - Gate-to-Source Voltage (V)
Output Characteristics
10
75
8
60
6
4
5
Transfer Characteristics
gfs - Transconductance (S)
ID - Drain Current (A)
TC = - 55 °C
TC = 125 °C
TC = 25 °C
2
TC = - 55 °C
TC = 25 °C
45
30
TC = 125 °C
15
TC = 125 °C
TC = - 55 °C
0
0
0
1
2
3
4
VGS - Gate-to-Source Voltage (V)
0
5
2
8
10
8
16
24
32
VDS - Drain-to-Source Voltage (V)
40
Transconductance
0.10
1200
0.08
960
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
Transfer Characteristics
4
6
ID - Drain Current (A)
0.06
0.04
VGS = 4.5 V
Ciss
720
480
240
0.02
Coss
Crss
VGS = 10 V
0
0.00
0
8
16
24
ID - Drain Current (A)
32
On-Resistance vs. Drain Current
S13-0708-Rev. B, 01-Apr-13
40
0
Capacitance
Document Number: 62669
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ942EP
www.vishay.com
Vishay Siliconix
N-CHANNEL 1 TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
2.0
10
RDS(on) - On-Resistance (Normalized)
VGS - Gate-to-Source Voltage (V)
VGS = 10 V
ID = 7.8 A
8
ID = 16 A
VDS = 20 V
6
4
2
1.7
1.4
VGS = 4.5 V
1.1
0.8
0.5
0
0
3
6
9
12
Qg - Total Gate Charge (nC)
15
- 50 - 25
25
50
75
100
125
150
175
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Gate Charge
0.10
100
0.08
RDS(on) - On-Resistance (Ω)
10
IS - Source Current (A)
0
TJ = 150 °C
1
0.1
TJ = 25 °C
0.06
0.04
TJ = 25 °C
0.02
0.01
TJ = 150 °C
0.00
0.001
0.0
0.2
0.4
0.6
0.8
1.0
0
1.2
2
VSD - Source-to-Drain Voltage (V)
4
6
8
VGS - Gate-to-Source Voltage (V)
10
On-Resistance vs. Gate-to-Source Voltage
Source Drain Diode Forward Voltage
0.6
50
ID = 1 mA
VDS - Drain-to-Source Voltage (V)
0.3
VGS(th) Variance (V)
ID = 5 mA
0.0
- 0.3
ID = 250 μA
- 0.6
- 0.9
- 1.2
- 50 - 25
0
25
50
75 100
TJ - Temperature (°C)
Threshold Voltage
S13-0708-Rev. B, 01-Apr-13
125
150
175
48
46
44
42
40
- 50 - 25
0
25
50
75
100
125
150
175
TJ - Junction Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
Document Number: 62669
5
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ942EP
www.vishay.com
Vishay Siliconix
N-CHANNEL 1 TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
100
IDM Limited
ID - Drain Current (A)
10
1 ms
ID Limited
1
10 ms
100 ms, 1 s, 10 s, DC
Limited by RDS(on)*
0.1
BVDSS Limited
TC = 25 °C
Single Pulse
0.01
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = R thJA = 85 °C/W
3. T JM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10- 3
10- 2
10- 1
1
Square Wave Pulse Duration (s)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
S13-0708-Rev. B, 01-Apr-13
Document Number: 62669
6
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ942EP
www.vishay.com
Vishay Siliconix
N-CHANNEL 1 TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10- 4
10- 3
10- 2
10- 1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
S13-0708-Rev. B, 01-Apr-13
Document Number: 62669
7
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ942EP
www.vishay.com
Vishay Siliconix
N-CHANNEL 2 TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
40
40
VGS = 10 V thru 4 V
32
ID - Drain Current (A)
ID - Drain Current (A)
32
24
16
24
TC = 25 °C
16
TC = 125 °C
8
8
TC = - 55 °C
VGS = 3 V
0
0
0
2
4
6
8
VDS - Drain-to-Source Voltage (V)
0
10
1
Output Characteristics
2
3
4
VGS - Gate-to-Source Voltage (V)
5
Transfer Characteristics
2.0
100
TC = - 55 °C
TC = 25 °C
80
gfs - Transconductance (S)
ID - Drain Current (A)
1.6
1.2
TC = 25 °C
0.8
0.4
60
TC = 125 °C
40
20
TC = 125 °C
TC = - 55 °C
0.0
0
0
1
2
3
4
VGS - Gate-to-Source Voltage (V)
5
0
3
12
15
Transconductance
0.025
2000
0.020
1600
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
Transfer Characteristics
6
9
ID - Drain Current (A)
0.015
VGS = 4.5 V
0.010
Ciss
1200
800
VGS = 10 V
400
0.005
Coss
Crss
0
0.000
0
8
16
24
ID - Drain Current (A)
32
On-Resistance vs. Drain Current
S13-0708-Rev. B, 01-Apr-13
40
0
8
16
24
32
40
VDS - Drain-to-Source Voltage (V)
Capacitance
Document Number: 62669
8
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ942EP
www.vishay.com
Vishay Siliconix
N-CHANNEL 2 TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
2.0
8
ID = 6 A
VDS = 20 V
6
4
2
1.7
1.4
VGS = 4.5 V
1.1
0.8
0
0.5
0
5
10
15
20
Qg - Total Gate Charge (nC)
25
- 50 - 25
0
25
50
75
100
125
150
175
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Gate Charge
0.05
100
RDS(on) - On-Resistance (Ω)
10
IS - Source Current (A)
VGS = 10 V
ID = 10.1 A
RDS(on) - On-Resistance (Normalized)
VGS - Gate-to-Source Voltage (V)
10
TJ = 150 °C
1
0.1
TJ = 25 °C
0.01
0.04
0.03
TJ = 25 °C
0.02
0.01
TJ = 150 °C
0.001
0.00
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
VSD - Source-to-Drain Voltage (V)
4
6
8
10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Source Drain Diode Forward Voltage
0.6
52
0.3
50
0.0
VDS - Drain-to-Source Voltage (V)
VGS(th) Variance (V)
ID = 1 mA
ID = 5 mA
- 0.3
ID = 250 μA
- 0.6
- 0.9
- 1.2
- 50 - 25
0
25
50
75
100
TJ - Temperature (°C)
Threshold Voltage
S13-0708-Rev. B, 01-Apr-13
125
150
175
48
46
44
42
40
- 50 - 25
0
25
50
75
100
125
150
175
TJ - Junction Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
Document Number: 62669
9
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ942EP
www.vishay.com
Vishay Siliconix
N-CHANNEL 2 TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
IDM Limited
ID - Drain Current (A)
100
1 ms
10
ID Limited
10 ms
100 ms, 1 s, 10 s, DC
1
Limited by RDS(on)*
BVDSS Limited
0.1
TC = 25 °C
Single Pulse
0.01
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = R thJA = 85 °C/W
3. T JM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10- 3
10- 2
10- 1
1
Square Wave Pulse Duration (s)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
S13-0708-Rev. B, 01-Apr-13
Document Number: 62669
10
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ942EP
www.vishay.com
Vishay Siliconix
N-CHANNEL 2 TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10- 4
10- 3
10- 2
10- 1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?62669.
S13-0708-Rev. B, 01-Apr-13
Document Number: 62669
11
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
PowerPAK® SO-8L Assymetric Case Outline
b2
K
W
E
W4
E1
E3
E2
W2
W3
F
W1
D5
D4
K1
D3
D2
L
L1
L1
A1
b
b1
e
θ
D1
b3
b4
PIN 1
0.25 Gauge Line
D
C
A
PIN 1
DIM.
A
A1
b
b1
b2
b3
b4
c
D
D1
D2
D3
D4
D5
e
E
E1
E2
E3
F
L
L1
K
K1
W
W1
W2
W3
W4

MIN.
1.00
0.00
0.33
0.44
4.80
0.20
5.00
4.80
3.63
0.81
1.98
1.47
6.05
4.27
2.75
1.89
0.62
0.92
0°
MILLIMETERS
NOM.
1.07
0.41
0.51
4.90
0.094 typ.
0.64 typ.
0.25
5.13
4.90
3.73
0.91
2.08
1.57
1.27 BSC
6.15
4.37
2.85
1.99
0.72
1.07
0.51 typ.
0.74 typ.
0.23 typ.
0.41 typ.
2.82 typ.
2.96 typ.
0.51 typ.
-
MAX.
1.14
0.127
0.48
0.58
5.00
MIN.
0.039
0.00
0.013
0.017
0.189
0.30
5.25
5.00
3.83
1.01
2.18
1.67
0.008
0.197
0.189
0.142
0.032
0.078
0.058
6.25
4.47
2.95
2.09
0.15
0.82
1.22
0.238
0.168
0.108
0.074
0.024
0.036
10°
0°
INCHES
NOM.
0.042
0.016
0.020
0.193
0.004 typ.
0.025 typ
0.010
0.202
0.193
0.146
0.036
0.082
0.062
0.050 BSC
0.242
0.172
0.112
0.078
0.028
0.042
0.020 typ.
0.029 typ.
0.009 typ.
0.016 typ.
0.111 typ.
0.117 typ.
0.020 typ.
-
MAX.
0.045
0.005
0.019
0.023
0.197
0.012
0.207
0.197
0.150
0.040
0.086
0.066
0.246
0.176
0.116
0.082
0.006
0.032
0.048
10°
ECN: C12-1157-Rev. B, 12-Nov-12
DWG: 6009
Note
• Millimeters will gover
Revision: 12-Nov-12
Document Number: 62714
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PAD Pattern
www.vishay.com
Vishay Siliconix
RECOMMENDED MINIMUM PADs FOR PowerPAK® SO-8L DUAL ASYMMETRIC
Recommended Minimum Pads
Dimensions in mm [inches]
Revision: 07-Mar-13
1
Document Number: 64477
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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Revision: 02-Oct-12
1
Document Number: 91000