SENSITRON SEMICONDUCTOR 1C6626 thru 1C6631 TECHNICAL DATA DATA SHEET 877, REV. B SILICON ULTRA-FAST RECOVERY EPITAXIAL RECTIFIER DIE Applications: • Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode Features: • • • • Glass Passivated Epitaxial Diode with Mesa Structure Soft Reverse Recovery at Low and High Temperature Low Forward Voltage Drop and Low Reverse Current Electrically and Mechanically Stable during and after Packaging MAX. RATINGS / ELECTRICAL CHARACTERISTICS Rating All ratings are at TA = 25oC unless otherwise specified. Symbol Condition Max Units WORKING PEAK REVERSE VOLTAGE 1C6626 1C6627 1C6628 1C6629 1C6630 1C6631 VRWM AVERAGE RECTIFIED FORWARD CURRENT 1C6626 thru 1C6628 1C6629 thru 1C6631 Io TA= 75 oC 2.3 1.8 PEAK FORWARD SURGE CURRENT 1C6626 thru 1C6630 1C6631 IFSM Tp=8.3ms 75 60 A(pk) MAXIMUM REVERSE CURRENT 1C6626 thru 1C6630 1C6631 IR @ VRWM Tj = 25 oC 2.0 4.0 μAmps IR @ VRWM Tj = 150 oC 500 600 μAmps IF=4A IF=3A IF=2A 1.50 1.70 1.95 IF=0.5A IRM =1.0A 30 50 60 MAXIMUM REVERSE CURRENT 1C6626 thru 1C6630 1C6631 MAX. PEAK FORWARD VOLTAGE (PULSED) 1C6626 thru 1C6628 1C6629 to 1C6630 1C6631 MAXIMUM REVERSE RECOVERY TIME 1C6626 thru 1C6628 1C6629 to 1C6630 1C6631 VFM Trr 200 400 600 800 900 1000 ©2000 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729-4681 Phone (631) 586 7600 Fax (631) 242 9798 • www.sensitron.com • [email protected] Volts Amps Volts ns SENSITRON SEMICONDUCTOR 1C6626 thru 1C6631 TECHNICAL DATA DATA SHEET 877, REV. B Dimensions in inches (mm): Bottom side metalization: Ti/Ni/Ag - 30 kÅ minimum. Top side metalization: Al - 25 kÅ minimum 0.049 ± 0.003 (1.245 ± 0.076) 0.065 ± 0.003 (1.651 ± 0.076) Bottom side is cathode, top side is anode. 0.009 ± 0.001 (0.229 ± 0.025) DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of Sensitron Semiconductor. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations. ©2000 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729-4681 Phone (631) 586 7600 Fax (631) 242 9798 • www.sensitron.com • [email protected]