FSYC360D, FSYC360R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space environments. The dose rate and neutron tolerance necessary for military applications have not been sacrificed. The Intersil portfolio of SEGR resistant radiation hardened MOSFETs includes N-Channel and P-Channel devices in a variety of voltage, current and on-resistance ratings. Numerous packaging options are also available. This MOSFET is an enhancement-mode silicon-gate power field-effect transistor of the vertical DMOS (VDMOS) structure. It is specially designed and processed to be radiation tolerant. The MOSFET is well suited for applications exposed to radiation environments such as switching regulation, switching converters, motor drives, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low gate drive power. This type can be operated directly from integrated circuits. February 2000 File Number 4791 Features • 21A, 400V, rDS(ON) = 0.210Ω • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias • Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM • Photo Current - 35nA Per-RAD(Si)/s Typically • Neutron - Maintain Pre-RAD Specifications for 3E12 Neutrons/cm2 - Usable to 3E13 Neutrons/cm2 Symbol D G Reliability screening is available as either commercial, TXV equivalent of MIL-S-19500, or Space equivalent of MIL-S-19500. Contact Intersil Corporation for any desired deviations from the data sheet. S Packaging Ordering Information RAD LEVEL SCREENING LEVEL SMD2 PART NUMBER/BRAND 10K Commercial FSYC360D1 100K TXV FSYC360R3 100K Space FSYC360R4 Formerly available as type TA45206. 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000 FSYC360D, FSYC360R Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified FSYC360D, FSYC360R UNITS 400 400 V V 21 13 63 ±20 A A A V 208 83 1.67 63 21 63 -55 to 150 300 W W W/ oC A A A oC oC Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS Drain to Gate Voltage (RGS = 20kΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR Continuous Drain Current TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Maximum Power Dissipation TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Single Pulsed Avalanche Current, L = 100µH, (See Test Figure) . . . . . . . . . . . . . . . . . . . . . .IAS Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IS Pulsed Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL (Distance >0.063in (1.6mm) from Case, 10s Max) CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. TC = 25oC, Unless Otherwise Specified Electrical Specifications PARAMETER SYMBOL Drain to Source Breakdown Voltage Gate Threshold Voltage BVDSS VGS(TH) Zero Gate Voltage Drain Current IDSS Gate to Source Leakage Current IGSS Drain to Source On-State Voltage Drain to Source On Resistance VDS(ON) Fall Time Total Gate Charge VDS = 320V, VGS = 0V VGS = ±20V VGS = 12V, ID = 21A MAX UNITS 400 - - V - - 5.0 V 1.5 - 4.0 V 0.5 - - V - - 25 µA - - 250 µA - - 100 nA - - 200 nA - 4.85 V - 0.190 0.210 Ω TC = 125oC - - 0.410 Ω - - 45 ns - - 45 ns td(OFF) - - 120 ns tf - - 25 ns - - 280 nC - 160 180 nC - - 9 nC tr Turn-Off Delay Time VGS = VDS, ID = 1mA TC = -55oC TC = 25oC TC = 125oC TC = 25oC TC = 125oC TC = 25oC TC = 125oC TYP - td(ON) Rise Time ID = 1mA, VGS = 0V MIN TC = 25oC rDS(ON)12 Turn-On Delay Time TEST CONDITIONS ID = 13A, VGS = 12V VDD = 200V, ID = 21A, RL = 9.5Ω, VGS = 12V, RGS = 2.35Ω Qg(TOT) VGS = 0V to 20V Gate Charge at 12V Qg(12) VGS = 0V to 12V Threshold Gate Charge Qg(TH) VGS = 0V to 2V VDD = 200V, ID = 21A Gate Charge Source Qgs - 26 30 nC Gate Charge Drain Qgd - 82 92 nC - 7 - V Plateau Voltage V(PLATEAU) 2 ID = 21A, VDS = 15V FSYC360D, FSYC360R TC = 25oC, Unless Otherwise Specified (Continued) Electrical Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS - 4100 - pF - 520 - pF Input Capacitance CISS VDS = 25V, VGS = 0V, f = 1MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS - 160 - pF Thermal Resistance Junction to Case RθJC - - 0.6 oC/W Source to Drain Diode Specifications PARAMETER SYMBOL Forward Voltage VSD Reverse Recovery Time TEST CONDITIONS MIN TYP MAX UNITS 0.6 - 1.8 V - - 1100 ns ISD = 21A trr ISD = 21A, dISD/dt = 100A/µs Electrical Specifications up to 100K RAD TC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN MAX UNITS Drain to Source Breakdown Volts (Note 3) BVDSS VGS = 0, ID = 1mA 400 - V Gate to Source Threshold Volts (Note 3) VGS(TH) VGS = VDS, ID = 1mA 1.5 4.0 V Gate to Body Leakage (Notes 2, 3) IGSS VGS = ±20V, VDS = 0V - 100 nA Zero Gate Leakage (Note 3) IDSS VGS = 0, VDS = 320V - 25 µA Drain to Source On-State Volts (Notes 1, 3) VDS(ON) VGS = 12V, ID = 21A - 4.85 V Drain to Source On Resistance (Notes 1, 3) rDS(ON)12 VGS = 12V, ID = 13A - 0.210 Ω NOTES: 1. Pulse test, 300µs Max. 2. Absolute value. 3. Insitu Gamma bias must be sampled for both VGS = 12V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS . Single Event Effects (SEB, SEGR) Note 4 ENVIRONMENT (NOTE 5) TYPICAL LET (MeV/mg/cm) TYPICAL RANGE (µ) APPLIED VGS BIAS (V) (NOTE 6) MAXIMUM VDS BIAS (V) TEST SYMBOL ION SPECIES Single Event Effects Safe Operating Area SEESOA Ni 26 43 -15 400 Ni 26 43 -20 360 Br 37 36 -5 400 Br 37 36 -10 320 Br 37 36 -15 200 Br 37 36 -20 80 NOTES: 4. Testing conducted at Brookhaven National Labs; sponsored by Naval Surface Warfare Center (NSWC), Crane, IN. 5. Fluence = 1E5 ions/cm2 (typical), T = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). 3 FSYC360D, FSYC360R Performance Curves Unless Otherwise Specified LET = 26MeV/mg/cm2, RANGE = 43µ 1E-3 LET = 37MeV/mg/cm2, RANGE = 36µ 500 LIMITING INDUCTANCE (HENRY) FLUENCE = 1E5 IONS/cm2 (TYPICAL) VDS (V) 400 300 200 100 0 -5 ILM = 10A 30A 1E-5 100A 300A 1E-6 1E-7 TEMP = 25oC 0 1E-4 -10 -15 -20 30 10 -25 100 300 1000 DRAIN SUPPLY (V) VGS (V) FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA FIGURE 2. TYPICAL DRAIN INDUCTANCE REQUIRED TO LIMIT GAMMA DOT CURRENT TO IAS 26 TC = 25oC ID , DRAIN CURRENT (A) 100 ID , DRAIN (A) 20 10 0 -50 0 50 100 TC , CASE TEMPERATURE (oC) 150 10 100µs 1ms 1 0.1 10ms OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) 1 10 100 1000 VDS , DRAIN-TO-SOURCE VOLTAGE (V) FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs TEMPERATURE FIGURE 4. FORWARD BIAS SAFE OPERATING AREA 2.5 PULSE DURATION = 250µs, VGS = 12V, ID = 13A 2.0 QGS NORMALIZED rDS(ON) QG 12V QGD VG 1.5 1.0 0.5 0.0 -80 CHARGE FIGURE 5. BASIC GATE CHARGE WAVEFORM 4 -40 0 40 80 120 160 TJ , JUNCTION TEMPERATURE (oC) FIGURE 6. TYPICAL NORMALIZED rDS(ON) vs JUNCTION TEMPERATURE FSYC360D, FSYC360R Performance Curves Unless Otherwise Specified (Continued) NORMALIZED THERMAL RESPONSE (ZθJC) 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.1 PDM SINGLE PULSE 0.01 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC + TC 0.001 10-5 10-4 10-3 10-2 10-1 100 101 t, RECTANGULAR PULSE DURATION (s) FIGURE 7. NORMALIZED MAXIMUM TRANSIENT THERMAL RESPONSE IAS , AVALANCHE CURRENT (A) 100 STARTING TJ = 25oC 10 STARTING TJ = 150oC IF R = 0 tAV = (L) (IAS) / (1.3 RATED BVDSS - VDD) 1 0.01 IF R ≠ 0 tAV = (L/R) ln [(IAS*R) / (1.3 RATED BVDSS - VDD) + 1] 0.1 1 tAV, TIME IN AVALANCHE (ms) 10 FIGURE 8. UNCLAMPED INDUCTIVE SWITCHING Test Circuits and Waveforms ELECTRONIC SWITCH OPENS WHEN IAS IS REACHED VDS L BVDSS + CURRENT I TRANSFORMER AS tP - VARY tP TO OBTAIN REQUIRED PEAK IAS VDD DUT tP VDD + 50Ω VGS ≤ 20V 0V VDS IAS 50V-150V 50Ω tAV FIGURE 9. UNCLAMPED ENERGY TEST CIRCUIT 5 FIGURE 10. UNCLAMPED ENERGY WAVEFORMS FSYC360D, FSYC360R Test Circuits and Waveforms (Continued) VDD tON tOFF td(ON) td(OFF) RL tr VDS VDS tf 90% 90% VGS = 12V DUT 10% 10% 0V 90% RGS 50% VGS 10% FIGURE 11. RESISTIVE SWITCHING TEST CIRCUIT 50% PULSE WIDTH FIGURE 12. RESISTIVE SWITCHING WAVEFORMS Screening Information Screening is performed in accordance with the latest revision in effect of MIL-S-19500, (Screening Information Table). Delta Tests and Limits (JANTXV Equivalent, JANS Equivalent) TC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MAX UNITS Gate to Source Leakage Current IGSS VGS = ±20V ±20 (Note 7) nA Zero Gate Voltage Drain Current IDSS VDS = 80% Rated Value ±25 (Note 7) µA Drain to Source On Resistance rDS(ON) TC = 25oC at Rated ID ±20% (Note 8) Ω Gate Threshold Voltage VGS(TH) ID = 1.0mA ±20% (Note 8) V NOTES: 7. Or 100% of Initial Reading (whichever is greater). 8. Of Initial Reading. Screening Information TEST JANTXV EQUIVALENT JANS EQUIVALENT Unclamped Inductive Switching VGS(PEAK) = 15V, L = 0.1mH, Limit = 63A VGS(PEAK) = 15V, L = 0.1mH, Limit = 63A Thermal Response tH = 10ms; VH = 25V; IH = 4A; Limit = 55mV tH = 10ms; VH = 25V; IH = 4A; Limit = 55mV Gate Stress VGS = 30V, t = 250µs VGS = 30V, t = 250µs Pind Optional Required Pre Burn-In Tests (Note 9) MIL-S-19500 Group A, Subgroup 2 (All Static Tests at 25oC) MIL-S-19500 Group A, Subgroup 2 (All Static Tests at 25oC) Steady State Gate Bias (Gate Stress) MIL-STD-750, Method 1042, Condition B VGS = 80% of Rated Value, TA = 150oC, Time = 48 hours MIL-STD-750, Method 1042, Condition B VGS = 80% of Rated Value, TA = 150oC, Time = 48 hours Interim Electrical Tests (Note 9) All Delta Parameters Listed in the Delta Tests and Limits Table All Delta Parameters Listed in the Delta Tests and Limits Table Steady State Reverse Bias (Drain Stress) MIL-STD-750, Method 1042, Condition A VDS = 80% of Rated Value, TA = 150oC, Time = 160 hours MIL-STD-750, Method 1042, Condition A VDS = 80% of Rated Value, TA = 150oC, Time = 240 hours PDA 10% 5% Final Electrical Tests (Note 9) MIL-S-19500, Group A, Subgroup 2 MIL-S-19500, Group A, Subgroups 2 and 3 NOTE: 9. Test limits are identical pre and post burn-in. 6 FSYC360D, FSYC360R Additional Tests PARAMETER SYMBOL TEST CONDITIONS MAX UNITS Safe Operating Area SOA VDS = 200V, t = 10ms 1.7 A Thermal Impedance ∆VSD tH = 500ms; VH = 20V; IH = 4A HEAT SINK REQUIRED 115 mV Rad Hard Data Packages - Intersil Power Transistors TXV Equivalent Class S - Equivalents 1. RAD HARD TXV EQUIVALENT - STANDARD DATA PACKAGE 1. RAD HARD “S” EQUIVALENT - STANDARD DATA PACKAGE A. Certificate of Compliance A. Certificate of Compliance B. Assembly Flow Chart B. Serialization Records C. Preconditioning - Attributes Data Sheet C. Assembly Flow Chart D. Group A - Attributes Data Sheet D. SEM Photos and Report E. Group B - Attributes Data Sheet F. Group C - Attributes Data Sheet G. Group D - Attributes Data Sheet E. Preconditioning - Attributes Data Sheet - Hi-Rel Lot Traveler - HTRB - Hi Temp Gate Stress Post Reverse Bias Data and Delta Data - HTRB - Hi Temp Drain Stress Post Reverse Bias Delta Data 2. RAD HARD TXV EQUIVALENT - OPTIONAL DATA PACKAGE F. Group A - Attributes Data Sheet A. Certificate of Compliance G. Group B - Attributes Data Sheet B. Assembly Flow Chart H. Group C - Attributes Data Sheet I. Group D - Attributes Data Sheet C. Preconditioning - Attributes Data Sheet - Precondition Lot Traveler - Pre and Post Burn-In Read and Record Data D. Group A - Attributes Data Sheet - Group A Lot Traveler E. Group B - Attributes Data Sheet - Group B Lot Traveler - Pre and Post Read and Record Data for Intermittent Operating Life (Subgroup B3) - Bond Strength Data (Subgroup B3) - Pre and Post High Temperature Operating Life Read and Record Data (Subgroup B6) F. Group C G. Group D - Attributes Data Sheet - Group C Lot Traveler - Pre and Post Read and Record Data for Intermittent Operating Life (Subgroup C6) - Bond Strength Data (Subgroup C6) - Attributes Data Sheet - Group D Lot Traveler - Pre and Post RAD Read and Record Data 2. RAD HARD MAX. “S” EQUIVALENT - OPTIONAL DATA PACKAGE A. Certificate of Compliance B. Serialization Records C. Assembly Flow Chart D. SEM Photos and Report E. Preconditioning - Attributes Data Sheet - Hi-Rel Lot Traveler - HTRB - Hi Temp Gate Stress Post Reverse Bias Data and Delta Data - HTRB - Hi Temp Drain Stress Post Reverse Bias Delta Data - X-Ray and X-Ray Report F. Group A - Attributes Data Sheet - Hi-Rel Lot Traveler - Subgroups A2, A3, A4, A5 and A7 Data G. Group B - Attributes Data Sheet - Hi-Rel Lot Traveler - Subgroups B1, B3, B4, B5 and B6 Data H. Group C - Attributes Data Sheet - Hi-Rel Lot Traveler - Subgroups C1, C2, C3 and C6 Data I. Group D 7 - Attributes Data Sheet - Hi-Rel Lot Traveler - Pre and Post Radiation Data FSYC360D, FSYC360R SMD2 3 PAD CERAMIC LEADLESS CHIP CARRIER INCHES E D MILLIMETERS SYMBOL MIN MAX MIN MAX NOTES A 0.129 0.139 3.27 3.53 - b 0.135 0.145 3.43 3.68 - D 0.520 0.530 13.20 13.46 - D1 0.435 0.445 11.05 11.30 - D2 0.115 0.125 2.92 3.17 - E 0.685 0.695 17.40 17.65 - E1 0.470 0.480 11.94 12.19 - E2 0.152 0.162 3.86 4.11 - NOTES: A 1. No current JEDEC outline for this package. 2. Controlling dimension: INCH. 3. Revision 2 dated 6-98. E2 E1 2 D1 D2 3 1 b 1 - GATE 2 - SOURCE 3 - DRAIN All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. 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