Reliability Report

UESD56B
Rev.01
Reliability Report
FOR
UESD56B
November 26, 2006
UNION SEMICONDUCTOR, INC.
Written by
Approved by
Liming Ge
Quality Assurance Engineer
Tina Liu
Quality Assurance Manager
Conclusion
The UESD56B successfully meets the quality and reliability standards required of all Union
products. In addition, Union’s continuous reliability monitoring program ensures that all
outgoing product will continue to meet Union’s quality and reliability standards.
Table of Contents
I. ........Device Description
II. ........Manufacturing Information
III. ........Packaging Information
IV. ........Die Information
V. ............Reliability Evaluation
I. Device Description
A. General
The UESD56B of TVS diode array is designed to protect sensitive electronics from damage or
latch-up due to ESD, for use in applications where board space is at a premium. It is
unidirectional device and may be used on lines where the signal polarities are above ground,
each device will protect up to five lines.
The UESD56B may be used to meet the immunity requirements of IEC 61000-4-2, level 4.
B. Absolute Maximum Ratings
Peak Pulse Power (tp = 8/20us)
(Ppk )
Thermal Resistance, Junction to Ambient (RθJA)
200 Watts
325 °C/W
Lead Soldering Temperature (TL)
260°C (10 sec.)
Operating Temperature (TA)
-55 to +125 °C
Storage Temperature ( TSTG)
-55 to +150 °C
Maximum Junction Temperature TJMAX
150 °C
II. Manufacturing Information
A. Process: Bipolar
B. Wafer Type: TVS36
C. Fabrication Location: P.R.China
D. Assembly Location: P.R.China
III. Packaging Information
A. Package Type: SC70-6/SC88/SOT363
B. Lead Frame: Copper
C. Lead Finish: Solder Plate
D. Die Attach: N/A
E. Bondwire: Gold (1.0 mil dia.)
F. Mold Material: Epoxy with silica filler
G. Flammability Rating: Class UL94-V0
I. Classification of Moisture Sensitivity
per JEDEC standard JESD22-A113: Level 1
IV. Die Information
A. Dimensions: 0.66 x 0.46 mm2
B. Passivation: Si3N4/SiO2 (Silicon nitride/ Silicon dioxide)
C. Interconnect: Al/Si/Cu
D. Backside Metallization: Au
E. Minimum Metal Width: Metal 1 .2microns
F. Minimum Metal Spacing: Metal 1 .2 microns
G. Bondpad Dimensions: 170x170 mm2
H. Isolation Dielectric: SiO2
I. Die Separation Method: Wafer Saw
V. Reliability Evaluation
A. Accelerated Life Test
Sample Size
Conditions
Pass
Failure
80
Tj=125℃,168hr
80
0
Test Circuit
UESD56B
B. Reliability evaluation test
Test Item
Test Condition
Failure
Package
Identifi-cation
Sample
Number
Size
of
Failure
Precondition
-65-150ºC,Dewell=15Min,
Electrical
JESD22-A113-D
5 Cycle; 125ºC,24h;
parameters &
85ºC/85%RH, 168h;
functionality
SC70-6
100
0
SC70-6
25
0
SC70-6
25
0
SC70-6
25
0
SC70-6
25
0
240ºC, 3 Times
TEMP. Cycle
-65-150ºC,Dewell=15Min,
Electrical
JESD22-A104-B
5 Cycle, 1000 Cycles
parameters &
functionality
Pressure Cooker
121ºC, 100%RH, 2atm,
Electrical
JESD22-A102-C
336h
parameters &
functionality
Temp. & Humi.
85ºC/85%RH, 1000h
JESD22-A101-B
Electrical
parameters &
functionality
High Temp. Storage
150ºC, 1000h
Electrical
JESD22-A103-B
parameters &
functionality
C. ESD
The UESD56B die type has been found to have all pins able to withstand a transient pulse of
± 15KV (Air) and 8 KV (Contact), per IEC 61000-4-2, level 4. (reference following ESD Test
Circuit).
Terminal A: Each pin individually connected to terminal A except Pin 2 with the other pins
floating.
Terminal B: Pin 2 connected to terminal B.
A
B