UESD55B Rev.01 Reliability Report FOR UESD55B December 28, 2006 UNION SEMICONDUCTOR, INC. Written by Approved by Liming Ge Quality Assurance Engineer Tina Liu Quality Assurance Manager Conclusion The UESD55B successfully meets the quality and reliability standards required of all Union products. In addition, Union’s continuous reliability monitoring program ensures that all outgoing product will continue to meet Union’s quality and reliability standards. Table of Contents I. ........Device Description II. ........Manufacturing Information III. ........Packaging Information IV. ........Die Information V. ....... Reliability Evaluation I. Device Description A. General The UESD55B of TVS diode array is designed to protect sensitive electronics from damage or latch-up due to ESD, for use in applications where board space is at a premium. It is unidirectional device and may be used on lines where the signal polarities are above ground, each device will protect up to four lines. The UESD55B may be used to meet the immunity requirements of IEC 61000-4-2, level 4. B. Absolute Maximum Ratings Peak Pulse Power (tp = 8/20us) (Ppk ) Thermal Resistance, Junction to Ambient (RθJA) 150 Watts 370 °C/W Lead Soldering Temperature (TL) 260°C (10 sec.) Operating Temperature (TA) -55 to +125 °C Storage Temperature ( TSTG) -55 to +150 °C Maximum Junction Temperature TJMAX 150 °C II. Manufacturing Information A. Process: Bipolar B. Wafer Type: TVS35A C. Fabrication Location: P.R.China D. Assembly Location: P.R.China III. Packaging Information A. Package Type: SC89-6/ SOT563/SOT666 B. Lead Frame: Copper C. Lead Finish: Solder Plate D. Die Attach: N/A E. Bondwire: Gold (1.0 mil dia.) F. Mold Material: Epoxy with silica filler G. Flammability Rating: Class UL94-V0 I. Classification of Moisture Sensitivity per JEDEC standard JESD22-A113: Level 1 IV. Die Information A. Dimensions: 0.59 x 0.59 mm2 B. Passivation: Si3N4/SiO2 (Silicon nitride/ Silicon dioxide) C. Interconnect: Al/Si/Cu D. Backside Metallization: Au E. Minimum Metal Width: Metal 1 .2microns F. Minimum Metal Spacing: Metal 1 .2 microns G. Bondpad Dimensions: 170x170 mm2 H. Isolation Dielectric: SiO2 I. Die Separation Method: Wafer Saw V. Reliability Evaluation A. Accelerated Life Test Sample Size Conditions Pass Failure 80 Tj=125℃,168hr 80 0 Test Circuit UESD55B B. Reliability evaluation test Test Item Test Condition Failure Package Identifi-cation Sample Number Size of Failure Precondition -65-150ºC,Dewell=15Min, Electrical JESD22-A113-D 5 Cycle; 125ºC,24h; parameters & 85ºC/85%RH, 168h; functionality SC89-6 100 0 SC89-6 25 0 SC89-6 25 0 SC89-6 25 0 SC89-6 25 0 240ºC, 3 Times TEMP. Cycle -65-150ºC,Dewell=15Min, Electrical JESD22-A104-B 5 Cycle， 1000 Cycles parameters & functionality Pressure Cooker 121ºC, 100%RH, 2atm, Electrical JESD22-A102-C 336h parameters & functionality Temp. & Humi. 85ºC/85%RH, 1000h JESD22-A101-B Electrical parameters & functionality High Temp. Storage 150ºC, 1000h Electrical JESD22-A103-B parameters & functionality C. ESD The UESD55B die type has been found to have all pins able to withstand a transient pulse of ± 15KV (Air) and 8 KV (Contact), per IEC 61000-4-2, level 4. (reference following ESD Test Circuit). Terminal A: Each pin individually connected to terminal A except Pin 2 with the other pins floating. Terminal B: Pin 2 connected to terminal B. A B