UM5055 Rev.01 Reliability Report FOR UM5055 October 16, 2006 UNION SEMICONDUCTOR, INC. Written by Approved by Liming Ge Quality Assurance Engineer Tina Liu Quality Assurance Manager Conclusion The UM5055 successfully meets the quality and reliability standards required of all Union products. In addition, Union’s continuous reliability monitoring program ensures that all outgoing product will continue to meet Union’s quality and reliability standards. Table of Contents I. ........Device Description II. ........Manufacturing Information III. ........Packaging Information IV. ........Die Information V. ....... Reliability Evaluation I. Device Description A. General The UM5055 ESD protection diode protects sensitive semiconductor components from damage or upset due to electrostatic discharge (ESD) and other voltage induced transient events. The UM5055 is available in a SOD523 package with working voltages of 5 volt. It gives designer the flexibility to protect one unidirectional line in applications where arrays are not practical. Additionally, it may be “sprinkled” around the board in applications where board space is at a premium. It may be used to meet the ESD immunity requirements of IEC 61000-4-2, Level 4. B. Absolute Maximum Ratings Peak Pulse Power (tp = 8/20us) (Ppk ) 240 Watts Lead Soldering Temperature (TL) 260°C (10 sec.) Operating Temperature (TA) -55 to +125 °C Storage Temperature ( TSTG) -55 to +150 °C Maximum Junction Temperature TJMAX 150 °C II. Manufacturing Information A. Process: Bipolar B. Wafer Type: TVS35A C. Fabrication Location: P.R.China D. Assembly Location: P.R.China III. Packaging Information A. Package Type: SOD523 B. Lead Frame: Copper C. Lead Finish: Solder Plate D. Die Attach: N/A E. Bondwire: Gold (1.0 mil dia.) F. Mold Material: Epoxy with silica filler G. Flammability Rating: Class UL94-V0 I. Classification of Moisture Sensitivity per JEDEC standard JESD22-A113: Level 1 IV. Die Information A. Dimensions: 0.285 x 0.285 mm2 B. Passivation: Si3N4/SiO2 (Silicon nitride/ Silicon dioxide) C. Interconnect: Al/Si/Cu D. Backside Metallization: Au E. Minimum Metal Width: Metal 1 .2microns F. Minimum Metal Spacing: Metal 1 .2 microns G. Bondpad Dimensions: 170x170 mm2 H. Isolation Dielectric: SiO2 I. Die Separation Method: Wafer Saw V. Reliability Evaluation A. Accelerated Life Test Sample Size Conditions Pass Failure 80 Tj=125℃,168hr 80 0 Test Circuit UM5055 B. Reliability evaluation test Test Item Test Condition Failure Package Identifi-cation Sample Number Size of Failure Precondition -65-150ºC,Dewell=15Min, Electrical JESD22-A113-D 5 Cycle; 125ºC,24h; parameters & 85ºC/85%RH, 168h; functionality SOD523 100 0 SOD523 25 0 SOD523 25 0 SOD523 25 0 240ºC, 3 Times TEMP. Cycle JESD22-A104-B -65-150ºC,Dewell=15Min, Electrical 5 Cycle， 100 Cycles parameters & functionality Pressure Cooker 121ºC, 100%RH, 2atm, Electrical JESD22-A102-C 96h parameters & functionality Temp. & Humi. JESD22-A101-B 85ºC/85%RH, 168h Electrical parameters & functionality High Temp. Storage 150ºC, 168h JESD22-A103-B Electrical SOD523 25 0 parameters & functionality C. ESD The UM5055 die type has been found to have all pins able to withstand a transient pulse of ± 15KV (Air) and 8 KV (Contact), per IEC 61000-4-2, level 4. (reference following ESD Test Circuit). Terminal A: Pin 1 connected to terminal A. Terminal B: Pin 2 connected to terminal B. A B