Reliability Report

UM5055
Rev.01
Reliability Report
FOR
UM5055
October 16, 2006
UNION SEMICONDUCTOR, INC.
Written by
Approved by
Liming Ge
Quality Assurance Engineer
Tina Liu
Quality Assurance Manager
Conclusion
The UM5055 successfully meets the quality and reliability standards required of all Union
products. In addition, Union’s continuous reliability monitoring program ensures that all
outgoing product will continue to meet Union’s quality and reliability standards.
Table of Contents
I. ........Device Description
II. ........Manufacturing Information
III. ........Packaging Information
IV. ........Die Information
V. ....... Reliability Evaluation
I. Device Description
A. General
The UM5055 ESD protection diode protects sensitive semiconductor components from
damage or upset due to electrostatic discharge (ESD) and other voltage induced transient
events. The UM5055 is available in a SOD523 package with working voltages of 5 volt.
It gives designer the flexibility to protect one unidirectional line in applications where arrays are
not practical. Additionally, it may be “sprinkled” around the board in applications where board
space is at a premium. It may be used to meet the ESD immunity requirements of IEC
61000-4-2, Level 4.
B. Absolute Maximum Ratings
Peak Pulse Power (tp = 8/20us)
(Ppk )
240 Watts
Lead Soldering Temperature (TL)
260°C (10 sec.)
Operating Temperature (TA)
-55 to +125 °C
Storage Temperature ( TSTG)
-55 to +150 °C
Maximum Junction Temperature TJMAX
150 °C
II. Manufacturing Information
A. Process: Bipolar
B. Wafer Type: TVS35A
C. Fabrication Location: P.R.China
D. Assembly Location: P.R.China
III. Packaging Information
A. Package Type: SOD523
B. Lead Frame: Copper
C. Lead Finish: Solder Plate
D. Die Attach: N/A
E. Bondwire: Gold (1.0 mil dia.)
F. Mold Material: Epoxy with silica filler
G. Flammability Rating: Class UL94-V0
I. Classification of Moisture Sensitivity
per JEDEC standard JESD22-A113: Level 1
IV. Die Information
A. Dimensions: 0.285 x 0.285 mm2
B. Passivation: Si3N4/SiO2 (Silicon nitride/ Silicon dioxide)
C. Interconnect: Al/Si/Cu
D. Backside Metallization: Au
E. Minimum Metal Width: Metal 1 .2microns
F. Minimum Metal Spacing: Metal 1 .2 microns
G. Bondpad Dimensions: 170x170 mm2
H. Isolation Dielectric: SiO2
I. Die Separation Method: Wafer Saw
V. Reliability Evaluation
A. Accelerated Life Test
Sample Size
Conditions
Pass
Failure
80
Tj=125℃,168hr
80
0
Test Circuit
UM5055
B. Reliability evaluation test
Test Item
Test Condition
Failure
Package
Identifi-cation
Sample
Number
Size
of
Failure
Precondition
-65-150ºC,Dewell=15Min,
Electrical
JESD22-A113-D
5 Cycle; 125ºC,24h;
parameters &
85ºC/85%RH, 168h;
functionality
SOD523
100
0
SOD523
25
0
SOD523
25
0
SOD523
25
0
240ºC, 3 Times
TEMP. Cycle
JESD22-A104-B
-65-150ºC,Dewell=15Min,
Electrical
5 Cycle, 100 Cycles
parameters &
functionality
Pressure Cooker
121ºC, 100%RH, 2atm,
Electrical
JESD22-A102-C
96h
parameters &
functionality
Temp. & Humi.
JESD22-A101-B
85ºC/85%RH, 168h
Electrical
parameters &
functionality
High Temp. Storage
150ºC, 168h
JESD22-A103-B
Electrical
SOD523
25
0
parameters &
functionality
C. ESD
The UM5055 die type has been found to have all pins able to withstand a transient pulse of
± 15KV (Air) and 8 KV (Contact), per IEC 61000-4-2, level 4. (reference following ESD Test
Circuit).
Terminal A: Pin 1 connected to terminal A.
Terminal B: Pin 2 connected to terminal B.
A
B