INTERSIL CD4042BMS

CD4042BMS
CMOS Quad Clocked “D” Latch
December 1992
Features
Pinout
• High-Voltage Type (20V Rating)
CD4042BMS
TOP VIEW
• Clock Polarity Control
• Q and Q Outputs
Q4 1
16 VDD
• Common Clock
Q1 2
15 Q4
• Low Power TTL Compatible
Q1 3
14 D4
D1 4
13 D3
CLOCK 5
12 Q3
POLARITY 6
11 Q3
D2 7
10 Q2
VSS 8
9 Q2
• Standardized Symmetrical Output Characteristics
• 100% Tested for Quiescent Current at 20V
• Maximum Input Current of 1µA at 18V Over Full Package Temperature Range; 100nA at 18V and +25oC
• 5V, 10V and 15V Parametric Ratings
• Noise Margin (Over Full Package Temperature Range):
- 1V at VDD = 5V
- 2V at VDD = 10V
- 2.5V at VDD = 15V
• Meets All Requirements of JEDEC Tentative Standard
No. 13B, “Standard Specifications for Description of
‘B’ Series CMOS Devices”
NC = NO CONNECTION
Functional Diagram
D1
4
Applications
D2
7
2
Q1
3
Q1
10
Q2
9
Q2
11
Q3
12
Q3
1
Q4
15
Q4
• Buffer Storage
• Holding Register
D3 13
• General Digital Logic
Description
D4 14
CD4042BMS types contain four latch circuits, each strobed by a
common clock. Complementary buffered outputs are available
from each circuit. The impedance of the n- and p- channel output
devices is balanced and all outputs are electrically identical.
Information present at the data input is transferred to outputs Q
and Q during the CLOCK level which is programmed by the
POLARITY input. For POLARITY = 0 the transfer occurs during
the 0 CLOCK level and for POLARITY = 1 the transfer occurs
during the 1 CLOCK level. The outputs follow the data input
defined above are present. When a CLOCK transition occurs
(positive for POLARITY = 0 and negative for POLARITY = 1) the
information present at the input during the CLOCK transition is
retained at the outputs until an opposite CLOCK transition
occurs.
CLOCK
5
CL
POLARITY
6
VDD
16
VSS
8
The CD4042BMS is supplied in these 16 lead outline packages:
Braze Seal DIP
H4T
Frit Seal DIP
H1E
Ceramic Flatpack
H6W
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
7-868
File Number
3310
Specifications CD4042BMS
Absolute Maximum Ratings
Reliability Information
DC Supply Voltage Range, (VDD) . . . . . . . . . . . . . . . -0.5V to +20V
(Voltage Referenced to VSS Terminals)
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VDD +0.5V
DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA
Operating Temperature Range . . . . . . . . . . . . . . . . -55oC to +125oC
Package Types D, F, K, H
Storage Temperature Range (TSTG) . . . . . . . . . . . -65oC to +150oC
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . +265oC
At Distance 1/16 ± 1/32 Inch (1.59mm ± 0.79mm) from case for
10s Maximum
Thermal Resistance . . . . . . . . . . . . . . . .
θja
θjc
Ceramic DIP Package . . . . . . . . . . . . . 80oC/W
20oC/W
Flatpack Package . . . . . . . . . . . . . . . . 70oC/W
20oC/W
o
Maximum Package Power Dissipation (PD) at +125 C
For TA = -55oC to +100oC (Package Type D, F, K) . . . . . . 500mW
For TA = +100oC to +125oC (Package Type D, F, K) . . . . . Derate
Linearity at 12mW/oC to 200mW
Device Dissipation per Output Transistor . . . . . . . . . . . . . . . 100mW
For TA = Full Package Temperature Range (All Package Types)
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
Supply Current
SYMBOL
IDD
CONDITIONS (NOTE 1)
VDD = 20V, VIN = VDD or GND
VDD = 18V, VIN = VDD or GND
Input Leakage Current
IIL
VIN = VDD or GND
VDD = 20
VDD = 18V
Input Leakage Current
IIH
VIN = VDD or GND
VDD = 20
GROUP A
SUBGROUPS
LIMITS
TEMPERATURE
MIN
+25
-
2
µA
+125oC
-
200
µA
3
-55oC
-
2
µA
1
+25o
C
-100
-
nA
2
+125oC
-1000
-
nA
3
-55oC
-100
-
nA
1
+25oC
-
100
nA
2
+125oC
-
1000
nA
-
100
nA
-
50
mV
-
V
3
Output Voltage
VOL15
VDD = 15V, No Load
1, 2, 3
+25oC, +125oC, -55oC
Output Voltage
VOH15
VDD = 15V, No Load (Note 3)
1, 2, 3
+25oC, +125oC, -55oC 14.95
Output Current (Sink)
IOL5
VDD = 5V, VOUT = 0.4V
UNITS
1
-55oC
VDD = 18V
MAX
2
oC
1
+25oC
0.53
-
mA
Output Current (Sink)
IOL10
VDD = 10V, VOUT = 0.5V
1
+25oC
1.4
-
mA
Output Current (Sink)
IOL15
VDD = 15V, VOUT = 1.5V
1
+25oC
3.5
-
mA
1
+25oC
-
-0.53
mA
1
+25oC
-
-1.8
mA
Output Current (Source)
Output Current (Source)
IOH5A
IOH5B
VDD = 5V, VOUT = 4.6V
VDD = 5V, VOUT = 2.5V
Output Current (Source)
IOH10
VDD = 10V, VOUT = 9.5V
1
+25oC
-
-1.4
mA
Output Current (Source)
IOH15
VDD = 15V, VOUT = 13.5V
1
+25oC
-
-3.5
mA
1
+25oC
-2.8
-0.7
V
1
+25oC
0.7
2.8
V
N Threshold Voltage
P Threshold Voltage
Functional
VNTH
VPTH
F
VDD = 10V, ISS = -10µA
VSS = 0V, IDD = 10µA
VDD = 2.8V, VIN = VDD or GND
7
+25oC
VDD = 20V, VIN = VDD or GND
7
+25oC
VDD = 18V, VIN = VDD or GND
8A
+125oC
VDD = 3V, VIN = VDD or GND
8B
-55oC
VOH > VOL <
VDD/2 VDD/2
V
Input Voltage Low
(Note 2)
VIL
VDD = 5V, VOH > 4.5V, VOL < 0.5V
1, 2, 3
+25oC, +125oC, -55oC
-
1.5
V
Input Voltage High
(Note 2)
VIH
VDD = 5V, VOH > 4.5V, VOL < 0.5V
1, 2, 3
+25oC, +125oC, -55oC
3.5
-
V
Input Voltage Low
(Note 2)
VIL
VDD = 15V, VOH > 13.5V,
VOL < 1.5V
1, 2, 3
+25oC, +125oC, -55oC
-
4
V
Input Voltage High
(Note 2)
VIH
VDD = 15V, VOH > 13.5V,
VOL < 1.5V
1, 2, 3
+25oC, +125oC, -55oC
11
-
V
NOTES: 1. All voltages referenced to device GND.
2. Go/no go test with limits applied to inputs.
3. For accuracy, voltage is measured differentially to VDD. Limit
is 0.050V max.
7-869
Specifications CD4042BMS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
CONDITIONS (NOTES 1, 2)
Propagation Delay
(Note 2)
Data in to Q
TPHL1
TPLH1
VDD = 5V, VIN = VDD or GND
Propagation Delay
(Note 2)
Data in to Q
TPHL2
TPLH2
VDD = 5V, VIN = VDD or GND
Propagation Delay
(Note 2)
Clock to Q
TPHL3
TPLH3
VDD = 5V, VIN = VDD or GND
Propagation Delay
(Note 2)
Clock to Q
TPHL4
TPLH4
VDD = 5V, VIN = VDD or GND
TTHL
TTLH
VDD = 5V, VIN = VDD or GND
Transition Time
(Note 2)
GROUP A
SUBGROUPS TEMPERATURE
9
10, 11
9
+25oC
+125oC,
-55oC
+25oC
o
o
LIMITS
MIN
MAX
UNITS
-
220
ns
-
297
ns
-
300
ns
10, 11
+125 C, -55 C
-
405
ns
9
+25oC
-
450
ns
-
608
ns
10, 11
+125oC,
-55oC
9
+25oC
-
500
ns
10, 11
+125oC, -55oC
-
675
ns
9
+25oC
-
200
ns
-
270
ns
10, 11
o
o
+125 C, -55 C
NOTES:
1. VDD = 5V, CL = 50pF, RL = 200K, input TR, TF < 20ns.
2. -55oC and +125oC limits guaranteed, 100% testing being implemented.
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
LIMITS
PARAMETER
Supply Current
SYMBOL
CONDITIONS
NOTES
TEMPERATURE
MIN
MAX
UNITS
IDD
VDD = 5V, VIN = VDD or GND
1, 2
-55oC, +25oC
-
1
µA
+125oC
-
30
µA
-55oC, +25oC
-
2
µA
+125oC
-
60
µA
-55oC, +25oC
-
2
µA
+125oC
o
VDD = 10V, VIN = VDD or GND
VDD = 15V, VIN = VDD or GND
1, 2
1, 2
-
120
µA
Output Voltage
VOL
VDD = 5V, No Load
1, 2
+25 C, +125oC,
-55oC
-
50
mV
Output Voltage
VOL
VDD = 10V, No Load
1, 2
+25oC, +125oC,
-55oC
-
50
mV
Output Voltage
VOH
VDD = 5V, No Load
1, 2
+25oC, +125oC,
-55oC
4.95
-
V
Output Voltage
VOH
VDD = 10V, No Load
1, 2
+25oC, +125oC,
-55oC
9.95
-
V
Output Current (Sink)
IOL5
VDD = 5V, VOUT = 0.4V
1, 2
+125oC
0.36
-
mA
-55oC
0.64
-
mA
Output Current (Sink)
Output Current (Sink)
Output Current (Source)
Output Current (Source)
Output Current (Source)
Output Current (Source)
IOL10
IOL15
IOH5A
IOH5B
IOH10
IOH15
VDD = 10V, VOUT = 0.5V
1, 2
VDD = 15V, VOUT = 1.5V
1, 2
VDD = 5V, VOUT = 4.6V
1, 2
VDD = 5V, VOUT = 2.5V
1, 2
VDD = 10V, VOUT = 9.5V
1, 2
VDD =15V, VOUT = 13.5V
1, 2
+125oC
0.9
-
mA
-55oC
1.6
-
mA
+125oC
2.4
-
mA
-55oC
4.2
-
mA
+125oC
-
-0.36
mA
-55oC
-
-0.64
mA
+125oC
-
-1.15
mA
-55oC
-
-2.0
mA
+125oC
-
-0.9
mA
-55oC
-
-1.6
mA
+125oC
-
-2.4
mA
-55oC
-
-4.2
mA
Input Voltage Low
VIL
VDD = 10V, VOH > 9V, VOL < 1V
1, 2
+25oC, +125oC,
-55oC
-
3
V
Input Voltage High
VIH
VDD = 10V, VOH > 9V, VOL < 1V
1, 2
+25oC, +125oC,
-55oC
+7
-
V
7-870
Specifications CD4042BMS
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
LIMITS
PARAMETER
SYMBOL
CONDITIONS
NOTES
TEMPERATURE
MIN
MAX
UNITS
VDD = 10V
1, 2, 3
+25oC
-
110
ns
VDD = 15V
1, 2, 3
+25oC
-
80
ns
VDD = 10V
1, 2, 3
+25oC
-
150
ns
VDD = 15V
1, 2, 3
+25oC
Propagation Delay
Data in to Q
TPHL1
TPLH1
Propagation Delay
Data in to Q
TPHL2
TPLH2
-
100
ns
Propagation Delay
Clock to Q
TPHL3
TPLH3
VDD = 10V
1, 2, 3
+25oC
-
200
ns
VDD = 15V
1, 2, 3
+25oC
-
160
ns
Propagation Delay
Clock to Q
TPLH4
TPHL4
VDD = 10V
1, 2, 3
+25oC
-
230
ns
VDD = 15V
1, 2, 3
+25oC
-
180
ns
TTHL
VDD = 10V
1, 2, 3
+25oC
-
100
ns
VDD = 15V
1, 2, 3
+25oC
-
80
ns
VDD = 5V
1, 2, 3
+25oC
-
*
-
VDD = 10V
1, 2, 3
+25oC
-
*
-
VDD = 15V
1, 2, 3
+25oC
-
*
-
VDD = 5V
1, 2, 3
+25oC
-
50
ns
VDD = 10V
1, 2, 3
+25oC
-
30
ns
VDD = 15V
1, 2, 3
+25oC
-
25
ns
VDD = 5V
1, 2, 3
+25oC
-
120
ns
VDD = 10V
1, 2, 3
+25oC
-
60
ns
VDD = 15V
1, 2, 3
+25oC
-
50
ns
VDD = 5V
1, 2, 3
+25oC
-
200
ns
VDD = 10V
1, 2, 3
+25oC
-
100
ns
VDD = 15V
1, 2, 3
+25oC
-
60
ns
1, 2
+25oC
-
7.5
pF
Transition Time
Clock Input Rise and Fall
Time (Note 4)
Minimum Data Setup
Time
TRCL
TFCL
TS
Minimum Data Hold Time
Minimum Clock Pulse
Width
TH
TW
Input Capacitance
CIN
Any Input
NOTES:
1. All voltages referenced to device GND.
2. The parameters listed on Table 3 are controlled via design or process and are not directly tested. These parameters are characterized
on initial design release and upon design changes which would affect these characteristics.
3. CL = 50pF, RL = 200K.
4. * Not sensitive
TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
LIMITS
PARAMETER
Supply Current
SYMBOL
IDD
CONDITIONS
NOTES
TEMPERATURE
VDD = 20V, VIN = VDD or GND
1, 4
+25oC
VDD = 10V, ISS = -10µA
1, 4
+25oC
VDD = 10V, ISS = -10µA
1, 4
+25oC
MIN
MAX
UNITS
-
7.5
µA
-2.8
-0.2
V
-
±1
V
N Threshold Voltage
VNTH
N Threshold Voltage
Delta
∆VTN
P Threshold Voltage
VTP
VSS = 0V, IDD = 10µA
1, 4
+25oC
0.2
2.8
V
P Threshold Voltage
Delta
∆VTP
VSS = 0V, IDD = 10µA
1, 4
+25oC
-
±1
V
1
+25oC
VOH >
VDD/2
VOL <
VDD/2
V
1, 2, 3, 4
+25oC
-
1.35 x
+25oC
Limit
ns
Functional
F
VDD = 18V, VIN = VDD or GND
VDD = 3V, VIN = VDD or GND
Propagation Delay Time
TPHL
TPLH
VDD = 5V
3. See Table 2 for +25oC limit.
NOTES: 1. All voltages referenced to device GND.
2. CL = 50pF, RL = 200K, Input TR, TF < 20ns.
4. Read and Record
7-871
Specifications CD4042BMS
TABLE 5. BURN-IN AND LIFE TEST DELTA PARAMETERS +25OC
PARAMETER
SYMBOL
DELTA LIMIT
Supply Current - MSI-1
IDD
± 0.2µA
Output Current (Sink)
IOL5
± 20% x Pre-Test Reading
IOH5A
± 20% x Pre-Test Reading
Output Current (Source)
TABLE 6. APPLICABLE SUBGROUPS
CONFORMANCE GROUP
METHOD
GROUP A SUBGROUPS
Initial Test (Pre Burn-In)
100% 5004
1, 7, 9
IDD, IOL5, IOH5A
Interim Test 1 (Post Burn-In)
100% 5004
1, 7, 9
IDD, IOL5, IOH5A
Interim Test 2 (Post Burn-In)
100% 5004
1, 7, 9
IDD, IOL5, IOH5A
100% 5004
1, 7, 9, Deltas
PDA (Note 1)
Interim Test 3 (Post Burn-In)
100% 5004
1, 7, 9
100% 5004
1, 7, 9, Deltas
100% 5004
2, 3, 8A, 8B, 10, 11
Sample 5005
1, 2, 3, 7, 8A, 8B, 9, 10, 11
Subgroup B-5
Sample 5005
1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas
Subgroup B-6
Sample 5005
1, 7, 9
Sample 5005
1, 2, 3, 8A, 8B, 9
PDA (Note 1)
Final Test
Group A
Group B
Group D
READ AND RECORD
IDD, IOL5, IOH5A
Subgroups 1, 2, 3, 9, 10, 11
Subgroups 1, 2 3
NOTE:
1. 1.5% parametric, 3% functional; cumulative for static 1 and 2.
TABLE 7. TOTAL DOSE IRRADIATION
TEST
CONFORMANCE GROUPS
Group E Subgroup 2
READ AND RECORD
METHOD
PRE-IRRAD
POST-IRRAD
PRE-IRRAD
POST-IRRAD
5005
1, 7, 9
Table 4
1, 9
Table 4
TABLE 8. BURN-IN AND IRRADIATION TEST CONNECTIONS
OSCILLATOR
FUNCTION
OPEN
GROUND
VDD
Static Burn-In 1
Note 1
1 - 3, 9 - 12, 15
4 - 8, 13, 14
16
Static Burn-In 2
Note 1
1 - 3, 9 - 12, 15
8
4 - 7, 13, 14, 16
Dynamic BurnIn Note 1
-
8
6, 16
1 - 3, 9 - 12, 15
8
4 - 7, 13, 14, 16
Irradiation
Note 2
9V ± -0.5V
50kHz
25kHz
1 - 3, 9 - 12, 15
5
4, 7, 13, 14
NOTE:
1. Each pin except VDD and GND will have a series resistor of 10K ± 5%, VDD = 18V ± 0.5V
2. Each pin except VDD and GND will have a series resistor of 47K ± 5%; Group E, Subgroup 2, sample size is 4 dice/wafer, 0 failures, VDD
= 10V ± 0.5V
7-872
Specifications CD4042BMS
Logic Diagram
ONE OF FOUR LATCHES
CL
*
D1
4
TG
2
Q1
3
Q1
CL
CL
TG
*ALL INPUTS ARE PROTECTED
BY CMOS PROTECTION
NETWORK
CL
VDD
CONTROL
P
*
CLOCK
5
TG
CL
TG
CL
P
VSS
P
*
POLARITY
6
P
P
LOGIC BLOCK DIAGRAM
TRUTH TABLE
CLOCK
POLARITY
0
0
D
0
LATCH
1
Q
1
D
1
LATCH
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate
and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
Sales Office Headquarters
NORTH AMERICA
Intersil Corporation
P. O. Box 883, Mail Stop 53-204
Melbourne, FL 32902
TEL: (321) 724-7000
FAX: (321) 724-7240
EUROPE
Intersil SA
Mercure Center
100, Rue de la Fusee
1130 Brussels, Belgium
TEL: (32) 2.724.2111
FAX: (32) 2.724.22.05
873
ASIA
Intersil (Taiwan) Ltd.
Taiwan Limited
7F-6, No. 101 Fu Hsing North Road
Taipei, Taiwan
Republic of China
TEL: (886) 2 2716 9310
FAX: (886) 2 2715 3029
CD4042BMS
30
GATE-TO-SOURCE VOLTAGE (VGS) = 15V
25
20
15
10V
10
5
5V
0
5
10
15
AMBIENT TEMPERATURE (TA) = +25oC
15.0
GATE-TO-SOURCE VOLTAGE (VGS) = 15V
12.5
10.0
10V
7.5
5.0
2.5
5V
0
5
10
15
DRAIN-TO-SOURCE VOLTAGE (VDS) (V)
DRAIN-TO-SOURCE VOLTAGE (VDS) (V)
FIGURE 1. TYPICAL OUTPUT LOW (SINK) CURRENT CHARACTERISTICS
0
AMBIENT TEMPERATURE (TA) = +25oC
GATE-TO-SOURCE VOLTAGE (VGS) = -5V
0
-5
-10
-15
-10V
-20
-25
-15V
DRAIN-TO-SOURCE VOLTAGE (VDS) (V)
-15
-10
-5
-30
-5
-10V
PROPAGATION DELAY TIME (tPHL, tPLH) (ns)
PROPAGATION DELAY TIME (tPHL, tPLH) (ns)
150
SUPPLY VOLTAGE (VDD) = 5V
125
100
10V
50
15V
25
20
30
40
50
60
70
80
-15
FIGURE 4. MINIMUM OUTPUT HIGH (SOURCE) CURRENT
CHARACTERISTICS
AMBIENT TEMPERATURE (TA) = +25oC
10
-10
-15V
175
0
0
GATE-TO-SOURCE VOLTAGE (VGS) = -5V
FIGURE 3. TYPICAL OUTPUT HIGH (SOURCE) CURRENT
CHARACTERISTICS
75
0
AMBIENT TEMPERATURE (TA) = +25oC
OUTPUT HIGH (SOURCE) CURRENT (IOH) (mA)
DRAIN-TO-SOURCE VOLTAGE (VDS) (V)
-15
-10
-5
FIGURE 2. MINIMUM OUTPUT LOW (SINK) CURRENT CHARACTERISTICS
OUTPUT HIGH (SOURCE) CURRENT (IOH) (mA)
AMBIENT TEMPERATURE (TA) = +25oC
OUTPUT LOW (SINK) CURRENT (IOL) (mA)
OUTPUT LOW (SINK) CURRENT (IOL) (mA)
Typical Performance Characteristics
AMBIENT TEMPERATURE (TA) = +25oC
175
150
SUPPLY VOLTAGE (VDD) = 5V
125
100
10V
75
50
15V
25
0
90 100
10
20
30
40
50
60
70
80
90 100
LOAD CAPACITANCE (CL) (pF)
LOAD CAPACITANCE (CL) (pF)
FIGURE 5. TYPICAL PROPAGATION DELAY TIME vs LOAD
CAPACITANCE - DATA TO Q
FIGURE 6. TYPICAL PROPAGATION DELAY TIME vs LOAD
CAPACITANCE - DATA TO Q
7-874
CD4042BMS
(Continued)
PROPAGATION DELAY TIME (tPHL, tPLH) (ns)
PROPAGATION DELAY TIME (tPHL, tPLH) (ns)
Typical Performance Characteristics
300
250
SUPPLY VOLTAGE (VDD) = 5V
200
150
10V
15V
100
50
AMBIENT TEMPERATURE (TA) = +25oC
0
20
40
60
100
80
120
300
250
SUPPLY VOLTAGE (VDD) = 5V
200
150
10V
15V
100
50
AMBIENT TEMPERATURE (TA) = +25oC
140
0
20
LOAD CAPACITANCE (CL) (pF)
TRANSITION TIME (tTHL, tTLH) (ns)
POWER DISSIPATION PER DEVICE (PD) (µW)
SUPPLY VOLTAGE (VDD) = 15V
103
10V
10V
5V
10
100
120
140
AMBIENT TEMPERATURE (TA) = +25oC
105
102
80
FIGURE 8. TYPICAL PROPAGATION DELAY TIME vs LOAD
CAPACITANCE - CLOCK TO Q
AMBIENT TEMPERATURE (TA) = +25oC
104
60
LOAD CAPACITANCE (CL) (pF)
FIGURE 7. TYPICAL PROPAGATION DELAY TIME vs LOAD
CAPACITANCE - CLOCK TO Q
106
40
CL = 50pF
CL = 15pF
200
SUPPLY VOLTAGE (VDD) = 5V
150
100
10V
15V
50
1
103
104
105
106
107
0
0
INPUT FREQUENCY (fI) (kHz)
FIGURE 9. TYPICAL POWER DISSIPATION vs FREQUENCY
20
40
60
80
100
LOAD CAPACITANCE (CL) (pF)
FIGURE 10. TYPICAL TRANSITION TIME vs LOAD CAPACITANCE
Chip Dimensions and Pad Layout
NOTE 1
CLOCK
CL
NOTE 2
DATA
INPUT
D
Q
OUTPUT
LATCH
LOW DATA
tS
tH
LATCH
HIGH DATA
LOW DATA
LATCHED
tPHL, tPLH
D TO Q OR Q
HIGH DATA
LATCHED
tPHL, tPLH
CL TO Q OR Q
NOTES:
1. For positive clock edge, input data is
latched when polarity is low.
2. For negative clock edge, input data is
latched when polarity is high.
Dimensions in parentheses are in millimeters and are
derived from the basic inch dimensions as indicated
Grid graduations are in mils (10-3 inch).
FIGURE 11. DYNAMIC TEST PARAMETERS
7-875