Test Report 003 Total Dose Testing of the ISL70227SEH and ISL70227SRH Radiation Hardened Dual Operational Amplifier Introduction Part Description This document reports the results of low and high dose rate total dose testing of the ISL70227SEH dual operational amplifier. The data for this report was obtained from wafer-by- wafer acceptance testing results. Samples were irradiated at low dose rate under bias and with all pins grounded and at high dose rate under bias. The ISL70227SEH is a precision dual operational amplifier featuring very low noise, low offset voltage, low input bias current and low temperature drift. These features plus its radiation tolerance make the ISL70227SEH the ideal choice for applications requiring both high DC accuracy and AC performance. The combination of precision, low noise and small footprint provides the user with outstanding value and flexibility relative to similar competitive parts. Applications for these amplifiers include precision and analytical instrumentation, active filters and power supply controls. The ISL70227SEH is available in a 10 Ld hermetic ceramic flatpack and operates across the extended temperature range of -55°C to +125°C. Constructed with Intersil's dielectrically isolated PR40 process, this device is immune to single event latch-up. The ISL70227SEH offers guaranteed performance across the full -55°C to +125°C military temperature range. Key post-radiation specifications as follows: The ISL70227SEH is available in two versions differing in total ionizing dose (TID) acceptance testing. The ISL70227SRH is acceptance tested on a wafer-by-wafer basis to 100krad(Si) at high dose rate (50 - 300rad(Si)/s) only. The ISL70227SEH is acceptance tested on a wafer-by-wafer basis to 100krad(Si) at both high dose rate (50 - 300rad(Si)/s) to 100krad(Si) and low dose rate (0.01rad(Si)/s) to 50krad(Si). The “RH” and “EH” devices are of the same design and silicon and differ in screening flows only. Reference Documents • MIL-STD-883 test method 1019 • ISL70227SEH datasheet. • Input offset voltage . . . . . . . . . . . . . . . . . . . . . . ±100μV maximum • Input offset voltage TC . . . . . . . . . . . . . . . . . 1.0μV/°C maximum • Input bias current . . . . . . . . . . . . . . . . . . . . . . . . ±25nA maximum • ISL70227SRH datasheet. • Standard Microcircuit Drawing (SMD) 5962-12223 • Input offset current . . . . . . . . . . . . . . . . . . . . . . . ±25nA maximum • Quiescent supply current, each amplifier . . . . 2.7mA maximum • Voltage noise . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2.5nV/Hz • Supply voltage range . . . . . . . . . . . . . . . . . . . . . . . . . . .4.5V to 42V • Operating temperature range . . . . . . . . . . . . . . - 55°C to +125°C • Standard Microcircuit Drawing (SMD) . . . . . . . . . 5962-12223 • Test Description Irradiation Facilities High dose rate testing was performed at 65rad(Si)/s using a Gamma cell 220 60Co irradiator located in the Palm Bay, Florida Intersil facility. Low dose rate testing was performed at 0.01rad(Si)/s using the Intersil Palm Bay N40 panoramic 60Co irradiator. Test Fixturing Figure 1 shows the configuration used for biased irradiation. March 10, 2015 TR003.0 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 1-888-468-3774 | Copyright Intersil Americas LLC 2015. All Rights Reserved Intersil (and design) is a trademark owned by Intersil Corporation or one of its subsidiaries. All other trademarks mentioned are the property of their respective owners. Test Report 003 BIASED UNBIASED V+ V+ - - ISL70227SEH VOUT ISL70227SEH + VOUT + V- V- V+ = 15V; V- =-15V; V+ = GND; V- = GND; FIGURE 1. IRRADIATION BIAS CONFIGURATION FOR THE ISL70227SEH PER SMD 5962-12223. THE FIGURE SHOWN IS FOR THE ISL70244SEH; THE ISL70227SEH CONFIGURATION IS IDENTICAL EXCEPT FOR ±18.0V SUPPLIES FOR THE BIASED CONFIGURATION. Characterization Equipment and Procedures All electrical testing was performed outside the irradiator using production Automated Test Equipment (ATE) with data logging at each downpoint. Downpoint electrical testing was performed at room temperature. Experimental Matrix Total dose irradiation proceeded in accordance with the guidelines of MIL-STD-883 Test Method 1019.7. The experimental matrix consisted of eight samples irradiated at low dose rate under bias, eight samples irradiated at low dose rate with all pins grounded and sixteen samples irradiated at high dose rate under bias. Samples of the ISL70227SEH were drawn from production lot WTM3XCAEH as part of routine wafer-by-wafer acceptance testing and were packaged in the hermetic 10-pin solder-sealed flatpack (CDFP4-F10) package. The samples were processed through the standard burn in cycle before irradiation, as required by MIL-STD-883 Method 1019 and were screened to the ATE limits at room temperature prior to the test. Downpoints Downpoints for the low dose rate tests were zero and 50krad(Si). Downpoints for the high dose rate test were zero and 100krad(Si). These downpoint schedules are routine for production acceptance testing (as opposed to characterization testing). Results TABLE 1. ISL70227SEH TOTAL DOSE TEST ATTRIBUTES DATA PART NUMBER DOSE RATE (Note 1) BIAS SAMPLE SIZE DOWNPOINT PASS (Note 2) ISL70227SEH LDR Biased 8 Preirradiation 8 50krad(Si) 8 Preirradiation 8 50krad(Si) 8 Preirradiation 16 100krad(Si) 16 ISL70227SEH ISL70227SEH LDR Grounded HDR Biased 8 16 REJECTS 0 0 0 NOTES: 1. “HDR” indicates high dose rate (50 to 300rad(Si)/s) as specified in MIL-STD-883 TM1019; the actual dose rate for these tests was 65rad(Si)/s. 'LDR' indicates low dose rate (0.01rad(Si)/s), also as specified in TM1019. 2. “Pass” indicates a sample that passes all post-irradiation SMD limits. Variables Data The plots in Figure 2 through 20 show data at downpoints. The plots show the median of key parameters as a function of low and high dose rate total dose for each of the two irradiation conditions. (refer to “Discussion and Conclusion” on page 12). Submit Document Feedback 2 TR003.0 March 10, 2015 Test Report 003 Variables Data Plots HIGH OUTPUT VOLTAGE (V) 14.0 13.8 13.6 13.4 13.2 LDR BIAS CH1 LDR GND CH1 HDR BIAS CH1 LDR BIAS CH2 LDR GND CH2 HDR BIAS CH2 SPEC LIMIT 13.0 0 50 100 TOTAL DOSE, krad(Si) FIGURE 2. ISL70227SEH HIGH OUTPUT VOLTAGE, ±15V SUPPLIES, CHANNELS 1 AND 2, AS A FUNCTION OF TOTAL DOSE IRRADIATION AT LOW DOSE RATE FOR THE BIASED (IN Figure 2) AND UNBIASED (ALL PINS GROUNDED) CASES AND AT HIGH DOSE RATE FOR THE BIASED CASE. THE DOSE RATE WAS 0.01rad(Si)/s FOR LOW DOSE RATE IRRADIATION AND 65rad(Si)/s FOR HIGH DOSE RATE IRRADIATION. SAMPLE SIZE FOR EACH OF THE LOW DOSE RATE CELLS WAS 8, WHILE THE SAMPLE SIZE FOR THE HIGH DOSE RATE CELL WAS 16. THE POST-IRRADIATION SMD LIMIT IS 13.1V MINIMUM. HIGH OUTPUT VOLTAGE (V) -13.0 -13.2 -13.4 -13.6 -13.8 LDR BIAS CH1 LDR GND CH1 HDR BIAS CH1 LDR BIAS CH2 LDR GND CH2 HDR BIAS CH2 SPEC LIMIT -14.0 0 50 100 TOTAL DOSE (krad(Si)) FIGURE 3. ISL70227SEH LOW OUTPUT VOLTAGE, ± 15V SUPPLIES, CHANNELS 1 AND 2, AS A FUNCTION OF TOTAL DOSE IRRADIATION AT LOW DOSE RATE FOR THE BIASED (SEE Figure 2) AND UNBIASED (ALL PINS GROUNDED) CASES AND AT HIGH DOSE RATE FOR THE BIASED CASE. THE DOSE RATE WAS 0.01rad(Si)/s FOR LOW DOSE RATE IRRADIATION AND 65rad(Si)/s FOR HIGH DOSE RATE IRRADIATION. SAMPLE SIZE FOR EACH OF THE LOW DOSE RATE CELLS WAS 8, WHILE THE SAMPLE SIZE FOR THE HIGH DOSE RATE CELL WAS 16. THE POST-IRRADIATION SMD LIMIT IS -13.1V MAXIMUM. Submit Document Feedback 3 TR003.0 March 10, 2015 Test Report 003 Variables Data Plots (Continued) INTPUT OFFSET VOLTAGE (µV) 150 100 50 0 -50 -100 -150 0 50 LDR BIAS CH1 LDR GND CH1 HDR BIAS CH1 LDR BIAS CH2 LDR GND CH2 HDR BIAS CH2 SPEC LIMIT SPEC LIMIT 100 TOTAL DOSE krad(Si)) FIGURE 4. ISL70227SEH INPUT OFFSET VOLTAGE, ±15V SUPPLIES, CHANNELS 1 AND 2, AS A FUNCTION OF TOTAL DOSE IRRADIATION AT LOW DOSE RATE FOR THE BIASED (SEE Figure 2) AND UNBIASED (ALL PINS GROUNDED) CASES AND AT HIGH DOSE RATE FOR THE BIASED CASE. THE DOSE RATE WAS 0.01rad(Si)/s FOR LOW DOSE RATE IRRADIATION AND 65rad(Si)/s FOR HIGH DOSE RATE IRRADIATION. SAMPLE SIZE FOR EACH OF THE LOW DOSE RATE CELLS WAS 8, WHILE THE SAMPLE SIZE FOR THE HIGH DOSE RATE CELL WAS 16. THE POST-IRRADIATION SMD LIMIT IS ±100.0µV MAXIMUM. POSITIVE INPUT BIAS CURRENT (nA) 30 20 10 0 -10 LDR BIAS CH1 LDR GND CH1 HDR BIAS CH1 LDR BIAS CH2 LDR GND CH2 HDR BIAS CH2 SPEC LIMIT SPEC LIMIT -20 -30 0 50 100 TOTAL DOSE (krad(Si)) FIGURE 5. ISL70227SEH POSITIVE INPUT BIAS CURRENT, ±15V SUPPLIES, CHANNELS 1 AND 2, AS A FUNCTION OF TOTAL DOSE IRRADIATION AT LOW DOSE RATE FOR THE BIASED (SEE Figure 2) AND UNBIASED (ALL PINS GROUNDED) CASES AND AT HIGH DOSE RATE FOR THE BIASED CASE. THE DOSE RATE WAS 0.01rad(Si)/s FOR LOW DOSE RATE IRRADIATION AND 65rad(Si)/s FOR HIGH DOSE RATE IRRADIATION. SAMPLE SIZE FOR EACH OF THE LOW DOSE RATE CELLS WAS 8, WHILE THE SAMPLE SIZE FOR THE HIGH DOSE RATE CELL WAS 16. THE POST-IRRADIATION SMD LIMIT IS ±25.0nA MAXIMUM. Submit Document Feedback 4 TR003.0 March 10, 2015 Test Report 003 Variables Data Plots (Continued) NEGATIVE INPUT BIAS CURRENT (nA) 30 20 10 0 -10 LDR BIAS CH1 LDR GND CH1 HDR BIAS CH1 LDR BIAS CH2 LDR GND CH2 HDR BIAS CH2 SPEC LIMIT SPEC LIMIT -20 -30 0 50 100 TOTAL DOSE (krad(Si)) FIGURE 6. ISL70227SEH NEGATIVE INPUT BIAS CURRENT, ±15V SUPPLIES, CHANNELS 1 AND 2, AS A FUNCTION OF TOTAL DOSE IRRADIATION AT LOW DOSE RATE FOR THE BIASED (SEE Figure 2) AND UNBIASED (ALL PINS GROUNDED) CASES AND AT HIGH DOSE RATE FOR THE BIASED CASE. THE DOSE RATE WAS 0.01rad(Si)/s FOR LOW DOSE RATE IRRADIATION AND 65rad(Si)/s FOR HIGH DOSE RATE IRRADIATION. SAMPLE SIZE FOR EACH OF THE LOW DOSE RATE CELLS WAS 8, WHILE THE SAMPLE SIZE FOR THE HIGH DOSE RATE CELL WAS 16. THE POST-IRRADIATION LIMIT SMD IS ±25.0nA MAXIMUM. INPUT OFFSET CURRENT (nA) 30 20 10 0 LDR BIAS CH1 LDR GND CH1 HDR BIAS CH1 LDR BIAS CH2 LDR GND CH2 -10 SPEC LIMIT HDR BIAS CH2 SPEC LIMIT -20 -30 0 50 100 TOTAL DOSE (krad(Si)) FIGURE 7. ISL70227SEH INPUT OFFSET CURRENT, ±15V SUPPLIES, CHANNELS 1 AND 2, AS A FUNCTION OF TOTAL DOSE IRRADIATION AT LOW DOSE RATE FOR THE BIASED (SEE Figure 2) AND UNBIASED (ALL PINS GROUNDED) CASES AND AT HIGH DOSE RATE FOR THE BIASED CASE. THE DOSE RATE WAS 0.01rad(Si)/s FOR LOW DOSE RATE IRRADIATION AND 65rad(Si)/s FOR HIGH DOSE RATE IRRADIATION. SAMPLE SIZE FOR EACH OF THE LOW DOSE RATE CELLS WAS 8, WHILE THE SAMPLE SIZE FOR THE HIGH DOSE RATE CELL WAS 16. THE POST-IRRADIATION SMD LIMIT IS ±25.0nA MAXIMUM. Submit Document Feedback 5 TR003.0 March 10, 2015 Test Report 003 Variables Data Plots (Continued) POSITIVE OPEN LOOP GAIN (dB) 80 70 60 LDR BIAS CH1 LDR GND CH1 HDR BIAS CH1 LDR BIAS CH2 LDR GND CH2 HDR BIAS CH2 SPEC LIMIT 50 0 50 100 TOTAL DOSE (krad(Si)) FIGURE 8. ISL70227SEH POSITIVE OPEN LOOP GAIN, ±15V SUPPLIES, CHANNELS 1 AND 2, AS A FUNCTION OF TOTAL DOSE IRRADIATION AT LOW DOSE RATE FOR THE BIASED (SEE Figure 2) AND UNBIASED (ALL PINS GROUNDED) CASES AND AT HIGH DOSE RATE FOR THE BIASED CASE. THE DOSE RATE WAS 0.01rad(Si)/s FOR LOW DOSE RATE IRRADIATION AND 65rad(Si)/s FOR HIGH DOSE RATE IRRADIATION. SAMPLE SIZE FOR EACH OF THE LOW DOSE RATE CELLS WAS 8, WHILE THE SAMPLE SIZE FOR THE HIGH DOSE RATE CELL WAS 16. THE POST-IRRADIATION SMD LIMIT IS 60.0dB MINIMUM. NEGATIVE OPEN LOOP GAIN (dB) 80 70 LDR GND CH1 HDR BIAS CH1 LDR BIAS CH2 LDR GND CH2 HDR BIAS CH2 SPEC LIMIT 60 50 LDR BIAS CH1 0 50 100 TOTAL DOSE (krad(Si)) FIGURE 9. ISL70227SEH NEGATIVE OPEN LOOP GAIN, ±15V SUPPLIES, CHANNELS 1 AND 2, AS A FUNCTION OF TOTAL DOSE IRRADIATION AT LOW DOSE RATE FOR THE BIASED (SEE Figure 2) AND UNBIASED (ALL PINS GROUNDED) CASES AND AT HIGH DOSE RATE FOR THE BIASED CASE. THE DOSE RATE WAS 0.01rad(Si)/s FOR LOW DOSE RATE IRRADIATION AND 65rad(Si)/s FOR HIGH DOSE RATE IRRADIATION. SAMPLE SIZE FOR EACH OF THE LOW DOSE RATE CELLS WAS 8, WHILE THE SAMPLE SIZE FOR THE HIGH DOSE RATE CELL WAS 16. THE POST-IRRADIATION SMD LIMIT IS 60.0dB MINIMUM. Submit Document Feedback 6 TR003.0 March 10, 2015 Test Report 003 Variables Data Plots (Continued) POSITIVE PSRR (dB) 125 120 LDR BIAS CH1 115 LDR BIAS CH2 LDR GND CH2 HDR BIAS CH2 SPEC LIMIT 110 105 LDR GND CH1 HDR BIAS CH1 0 50 100 TOTAL DOSE (krad(Si)) FIGURE 10. ISL70227SEH POSITIVE POWER SUPPLY REJECTION RATIO, ±15V SUPPLIES, CHANNELS 1 AND 2, AS A FUNCTION OF TOTAL DOSE IRRADIATION AT LOW DOSE RATE FOR THE BIASED (SEE Figure 2) AND UNBIASED (ALL PINS GROUNDED) CASES AND AT HIGH DOSE RATE FOR THE BIASED CASE. THE DOSE RATE WAS 0.01rad(Si)/s FOR LOW DOSE RATE IRRADIATION AND 65rad(Si)/s FOR HIGH DOSE RATE IRRADIATION. SAMPLE SIZE FOR EACH OF THE LOW DOSE RATE CELLS WAS 8, WHILE THE SAMPLE SIZE FOR THE HIGH DOSE RATE CELL WAS 16. THE POST-IRRADIATION SMD LIMIT IS 110.0dB MINIMUM. NEGATIVE PSRR (dB) 125 120 115 LDR Bias Ch1 110 105 LDR GND CH1 HDR BIAS CH1 LDR BIAS CH2 LDR GND CH2 HDR BIAS CH2 SPEC LIMIT 0 50 100 TOTAL DOSE (krad(Si)) FIGURE 11. ISL70227SEH NEGATIVE POWER SUPPLY REJECTION RATIO, ±15V SUPPLIES, CHANNELS 1 AND 2, AS A FUNCTION OF TOTAL DOSE IRRADIATION AT LOW DOSE RATE FOR THE BIASED (SEE Figure 2) AND UNBIASED (ALL PINS GROUNDED) CASES AND AT HIGH DOSE RATE FOR THE BIASED CASE. THE DOSE RATE WAS 0.01rad(Si)/s FOR LOW DOSE RATE IRRADIATION AND 65rad(Si)/s FOR HIGH DOSE RATE IRRADIATION. SAMPLE SIZE FOR EACH OF THE LOW DOSE RATE CELLS WAS 8, WHILE THE SAMPLE SIZE FOR THE HIGH DOSE RATE CELL WAS 16. THE POST-IRRADIATION SMD LIMIT IS 110.0dB MINIMUM. Submit Document Feedback 7 TR003.0 March 10, 2015 Test Report 003 Variables Data Plots (Continued) POSITIVE CMRR (dB) 180 160 140 120 LDR BIAS CH1 LDR GND CH1 HDR BIAS CH1 LDR BIAS CH2 LDR GND CH2 HDR BIAS CH2 SPEC LIMIT 100 0 50 TOTAL DOSE (krad(Si)) 100 FIGURE 12. ISL70227SEH POSITIVE COMMON MODE REJECTION RATIO, ±15V SUPPLIES, CHANNELS 1 AND 2, AS A FUNCTION OF TOTAL DOSE IRRADIATION AT LOW DOSE RATE FOR THE BIASED (SEE Figure 2) AND UNBIASED (ALL PINS GROUNDED) CASES AND AT HIGH DOSE RATE FOR THE BIASED CASE. THE DOSE RATE WAS 0.01rad(Si)/s FOR LOW DOSE RATE IRRADIATION AND 65rad(Si)/s FOR HIGH DOSE RATE IRRADIATION. SAMPLE SIZE FOR EACH OF THE LOW DOSE RATE CELLS WAS 8, WHILE THE SAMPLE SIZE FOR THE HIGH DOSE RATE CELL WAS 16. THE POST-IRRADIATION SMD LIMIT IS 115.0dB MINIMUM. NAGATIVE CMRR (dB) 180 160 140 120 100 LDR BIAS CH1 LDR GND CH1 HDR BIAS CH1 LDR BIAS CH2 LDR GND CH2 HDR BIAS CH2 SPEC LIMIT 0 50 100 TOTAL DOSE (krad(Si)) FIGURE 13. ISL70227SEH NEGATIVE COMMON MODE REJECTION RATIO, ±15V SUPPLIES, CHANNELS 1 AND 2, AS A FUNCTION OF TOTAL DOSE IRRADIATION AT LOW DOSE RATE FOR THE BIASED (SEE Figure 2) AND UNBIASED (ALL PINS GROUNDED) CASES AND AT HIGH DOSE RATE FOR THE BIASED CASE. THE DOSE RATE WAS 0.01rad(Si)/s FOR LOW DOSE RATE IRRADIATION AND 65rad(Si)/s FOR HIGH DOSE RATE IRRADIATION. SAMPLE SIZE FOR EACH OF THE LOW DOSE RATE CELLS WAS 8, WHILE THE SAMPLE SIZE FOR THE HIGH DOSE RATE CELL WAS 16. THE POST-IRRADIATION SMD LIMIT IS 115.0dB MINIMUM. Submit Document Feedback 8 TR003.0 March 10, 2015 Test Report 003 OUTPUT SC CURRENT SOURCING (mA) Variables Data Plots (Continued) 46 45 44 43 42 41 LDR BIAS CH1 LDR GND CH1 HDR BIAS CH1 LDR BIAS CH2 LDR GND CH2 HDR BIAS CH2 SPEC LIMIT 40 0 50 TOTAL DOSE (krad(Si)) 100 FIGURE 14. ISL70227SEH OUTPUT CURRENT, SOURCING, ±15V SUPPLIES, CHANNELS 1 AND 2, AS A FUNCTION OF TOTAL DOSE IRRADIATION AT LOW DOSE RATE FOR THE BIASED (SEE Figure 2) AND UNBIASED (ALL PINS GROUNDED) CASES AND AT HIGH DOSE RATE FOR THE BIASED CASE. THE DOSE RATE WAS 0.01rad(Si)/s FOR LOW DOSE RATE IRRADIATION AND 65rad(Si)/s FOR HIGH DOSE RATE IRRADIATION. SAMPLE SIZE FOR EACH OF THE LOW DOSE RATE CELLS WAS 8, WHILE THE SAMPLE SIZE FOR THE HIGH DOSE RATE CELL WAS 16. THE PARAMETER IS NOT SPECIFIED IN THE SMD AND THE DATA IS SHOWN FOR INFORMATION ONLY; THE INTERNAL POST-IRRADIATION LIMIT IS 45.0mA TYPICAL. OUTPUT SC CURRENT SINKING (mA) -40 -45 -50 -55 -60 LDR BIAS CH1 LDR GND CH1 HDR BIAS CH1 LDR BIAS CH2 LDR GND CH2 HDR BIAS CH2 SPEC LIMIT 0 50 TOTAL DOSE (krad(Si)) 100 FIGURE 15. ISL70227SEH OUTPUT CURRENT, SINKING, ±15V SUPPLIES, CHANNELS 1 AND 2, AS A FUNCTION OF TOTAL DOSE IRRADIATION AT LOW DOSE RATE FOR THE BIASED (SEE Figure 2) AND UNBIASED (ALL PINS GROUNDED) CASES AND AT HIGH DOSE RATE FOR THE BIASED CASE. THE DOSE RATE WAS 0.01rad(Si)/s FOR LOW DOSE RATE IRRADIATION AND 65rad(Si)/s FOR HIGH DOSE RATE IRRADIATION. SAMPLE SIZE FOR EACH OF THE LOW DOSE RATE CELLS WAS 8, WHILE THE SAMPLE SIZE FOR THE HIGH DOSE RATE CELL WAS 16. THE PARAMETER IS NOT SPECIFIED IN THE SMD AND THE DATA IS SHOWN FOR INFORMATION ONLY; THE INTERNAL POST-IRRADIATION LIMIT IS 45.0mA TYPICAL. Submit Document Feedback 9 TR003.0 March 10, 2015 Test Report 003 Variables Data Plots (Continued) 10 SUPPLY CURRENT (mA) 8 6 4 2 0 -2 LDR BIAS CH1 -4 LDR GND CH1 HDR BIAS CH2 -6 HDR BIAS CH1 SPEC LIMIT -8 LDR BIAS CH2 SPEC LIMIT -10 0 50 LDR GND CH2 100 TOTAL DOSE (krad(Si)) FIGURE 16. ISL70227SEH POSITIVE AND NEGATIVE SUPPLY CURRENT, ±15V SUPPLIES, SUM OF CHANNELS 1 AND 2, AS A FUNCTION OF TOTAL DOSE IRRADIATION AT LOW DOSE RATE FOR THE BIASED (SEE Figure 2) AND UNBIASED (ALL PINS GROUNDED) CASES AND AT HIGH DOSE RATE FOR THE BIASED CASE. THE DOSE RATE WAS 0.01rad(Si)/s FOR LOW DOSE RATE IRRADIATION AND 65rad(Si)/s FOR HIGH DOSE RATE IRRADIATION. SAMPLE SIZE FOR EACH OF THE LOW DOSE RATE CELLS WAS 8, WHILE THE SAMPLE SIZE FOR THE HIGH DOSE RATE CELL WAS 16. THE SMD POST-IRRADIATION LIMIT IS ±7.4mA MAXIMUM. POSITIVE SLEW RATE (V/µs) 4.5 4.0 3.5 3.0 2.5 2.0 1.5 LDR BIAS CH1 LDR GND CH1 HDR BIAS CH1 LDR BIAS CH2 LDR GND CH2 HDR BIAS CH2 SPEC LIMIT 0 50 100 TOTAL DOSE, (krad(Si)) FIGURE 17. ISL70227SEH POSITIVE SLEW RATE, CHANNELS 1 AND 2, ±15V SUPPLIES, AS A FUNCTION OF TOTAL DOSE IRRADIATION AT LOW DOSE RATE FOR THE BIASED (SEE Figure 2) AND UNBIASED (ALL PINS GROUNDED) CASES AND AT HIGH DOSE RATE FOR THE BIASED CASE. THE DOSE RATE WAS 0.01rad(Si)/s FOR LOW DOSE RATE IRRADIATION AND 65rad(Si)/s FOR HIGH DOSE RATE IRRADIATION. SAMPLE SIZE FOR EACH OF THE LOW DOSE RATE CELLS WAS 8, WHILE THE SAMPLE SIZE FOR THE HIGH DOSE RATE CELL WAS 16. THE SMD POST-IRRADIATION LIMIT IS 2.0V/µs MINIMUM. Submit Document Feedback 10 TR003.0 March 10, 2015 Test Report 003 Variables Data Plots (Continued) NAGATIVE SLEW RATE (V/µs) 4.5 4.0 3.5 3.0 2.5 2.0 LDR BIAS CH1 LDR GND CH1 HDR BIAS CH1 LDR BIAS CH2 LDR GND CH2 HDR BIAS CH2 SPEC LIMIT 1.5 0 50 100 TOTAL DOSE (krad(Si)) FIGURE 18. ISL70227SEH NEGATIVE SLEW RATE, CHANNELS 1 AND 2, ±15V SUPPLIES, AS A FUNCTION OF TOTAL DOSE IRRADIATION AT LOW DOSE RATE FOR THE BIASED (SEE Figure 2) AND UNBIASED (ALL PINS GROUNDED) CASES AND AT HIGH DOSE RATE FOR THE BIASED CASE. THE DOSE RATE WAS 0.01rad(Si)/s FOR LOW DOSE RATE IRRADIATION AND 65rad(Si)/s FOR HIGH DOSE RATE IRRADIATION. SAMPLE SIZE FOR EACH OF THE LOW DOSE RATE CELLS WAS 8, WHILE THE SAMPLE SIZE FOR THE HIGH DOSE RATE CELL WAS 16. THE SMD POST-IRRADIATION LIMIT IS 2.0V/µs MINIMUM. 120 RISE TIME (ns) 100 80 60 40 LDR BIAS CH1 LDR GND CH1 HDR BIAS CH1 LDR BIAS CH2 LDR GND CH2 HDR BIAS CH2 SPEC LIMIT 20 0 50 TOTAL DOSE (krad(Si)) 100 FIGURE 19. ISL70227SEH RISE TIME, CHANNELS 1 AND 2, ±15V SUPPLIES, AS A FUNCTION OF TOTAL DOSE IRRADIATION AT LOW DOSE RATE FOR THE BIASED (SEE Figure 2) AND UNBIASED (ALL PINS GROUNDED) CASES AND AT HIGH DOSE RATE FOR THE BIASED CASE. THE DOSE RATE WAS 0.01rad(Si)/s FOR LOW DOSE RATE IRRADIATION AND 65rad(Si)/s FOR HIGH DOSE RATE IRRADIATION. SAMPLE SIZE FOR EACH OF THE LOW DOSE RATE CELLS WAS 8, WHILE THE SAMPLE SIZE FOR THE HIGH DOSE RATE CELL WAS 16. THE SMD POST-IRRADIATION LIMIT IS 100.0ns MAXIMUM. Submit Document Feedback 11 TR003.0 March 10, 2015 Test Report 003 Variables Data Plots (Continued) 120 FALL TIME (ns) 100 80 60 40 20 LDR BIAS CH1 LDR GND CH1 HDR BIAS CH1 LDR BIAS CH2 LDR GND CH2 HDR BIAS CH2 SPEC LIMIT 0 50 TOTAL DOSE (krad(Si)) 100 FIGURE 20. ISL70227SEH FALL TIME, CHANNELS 1 AND 2, ±15V SUPPLIES, AS A FUNCTION OF TOTAL DOSE IRRADIATION AT LOW DOSE RATE FOR THE BIASED (SEE Figure 2) AND UNBIASED (ALL PINS GROUNDED) CASES AND AT HIGH DOSE RATE FOR THE BIASED CASE. THE DOSE RATE WAS 0.01rad(Si)/s FOR LOW DOSE RATE IRRADIATION AND 65rad(Si)/s FOR HIGH DOSE RATE IRRADIATION. SAMPLE SIZE FOR THE LOW DOSE RATE CELLS WAS 2, WHILE THE SAMPLE SIZE FOR THE HIGH DOSE RATE CELL WAS 4. THE SMD POST-IRRADIATION LIMIT IS 100.0ns MAXIMUM. Discussion and Conclusion This document reports the results of low and high dose rate total dose testing of the ISL70227SEH dual operational amplifier. The data for this report was obtained from wafer-by-wafer acceptance testing results. Parts were tested at low dose rate under biased and unbiased conditions and at high dose rate under biased conditions as outlined in MIL-STD-883 Test Method 1019.7, at 0.01rad(Si)/s and 65rad(Si)/s respectively. The low dose rate test was run to 50krad(Si) and the high dose rate was run to 100krad(Si). All parameters showed good stability out to the maximum total dose for each test and will be discussed below. The ISL70227SEH is available in two versions differing in total ionizing dose (TID) acceptance testing. The ISL70227SRH is acceptance tested on a wafer-by-wafer basis to 100krad(Si) at high dose rate (50 to 300rad(Si)/s) only. The ISL70227SEH is acceptance tested on a wafer-by-wafer basis to 100krad(Si) at both high dose rate (50 to 300rad(Si)/s) to 100krad(Si) and low dose rate (0.01rad(Si)/s) to 50krad(Si). The “RH” and “EH” devices are of the same design and silicon and differ in screening flows only. The output HIGH and LOW voltages (Figures 2 and 3) were stable over high dose rate irradiation. Note that this parameter provides a measure of the amplifier's ability to swing close to the rail and is not the LOW and HIGH voltage parameter seen in digital parts. moderately low dose rate sensitive (see MIL-STD-883, TM1019, section 3.13.1.1). The positive and negative open-loop gain (Figures 8 and 9) remained very stable at both dose rates. The positive and negative power supply rejection ratio (Figures 10 and 11) and the common mode rejection ratio (Figures 12 and 13) were stable at both dose rates. The sourcing and sinking output short-circuit current (Figures 14 and 15) and the positive and negative supply currents (Figures 16) remained stable at both dose rates. The positive and negative slew rates (Figures 17 and 18) were stable, as were the rise time and fall time (Figures 19 and 20). We conclude that the ISL70227SEH shows good performance to the SMD total dose limits of 50krad(Si) at low dose rate and 100krad(Si) at high dose rate. The part shows moderate low dose rate sensitivity in the input bias current parameters. No differences in total dose response were noted between biased and grounded low dose rate irradiation for any parameters. Additionally, no channel-to-channel differences were noted, either in the preirradiation data or in the total dose response of the parts. The input offset voltage, positive and negative input bias current and input offset current (Figures 4 through 7) remained within the SMD post-irradiation limits at both dose rates. The input offset voltage and input offset current (Figures 4 and 7) were stable over low and high dose rate irradiation but the positive and negative bias current (Figures 5 and 6) showed an increase over low dose rate while remaining well within the SMD post-irradiation limit of 25.0nA maximum. Hence the part must be considered Submit Document Feedback 12 TR003.0 March 10, 2015 Test Report 003 Appendix TABLE 2. REPORTED PARAMETERS FIGURE PARAMETER LIMIT LOW LIMIT HIGH UNITS NOTES 2 Output HIGH Voltage 13.1 - V Channels 1 and 2 3 Output LOW Voltage - -13.1 V Channels 1 and 2 4 Input Offset Voltage -100.0 100.0 µV Channels 1 and 2 5 Positive Input Bias Current -25.0 25.0 nA Channels 1 and 2 6 Negative Input Bias Current -25.0 25.0 nA Channels 1 and 2 7 Input Offset Current -25.0 25.0 nA Channels 1 and 2 8 Positive Open Loop Gain 60.0 - dB Channels 1 and 2 9 Negative Open Loop Gain 60.0 - dB Channels 1 and 2 10 Positive Power Supply Rejection Ratio 110.0 - dB Channels 1 and 2 11 Negative Power Supply Rejection Ratio 110.0 - dB Channels 1 and 2 12 Positive Common Mode Rejection Ratio 115.0 - dB Channels 1 and 2 13 Positive Common Mode Rejection Ratio 115.0 - dB Channels 1 and 2 14 Output Short Current, Sourcing - - mA Channels 1 and 2 15 Output Short Circuit Current, Sinking - - mA Channels 1 and 2 16 Positive and Negative Supply Current 7.4 - mA Sum of both channels 17 Positive Slew Rate 2.0 - V/µs Channels 1 and 2 18 Negative Slew Rate 2.0 - V/µs Channels 1 and 2 19 Positive Rise Time 100.0 - ns Channels 1 and 2 20 Negative Rise Time 100.0 - ns Channels 1 and 2 Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that the document is current before proceeding. For information regarding Intersil Corporation and its products, see www.intersil.com Submit Document Feedback 13 TR003.0 March 10, 2015