isl70227srh neutron report

Neutron testing of the ISL70227SEH hardened dual operational amplifier
Nick van Vonno
Intersil Corporation
3 November 2013
Revision 0
Table of Contents
1. Introduction
2. Part Description
3. Test Description
3.1 Irradiation facility
3.2 Characterization equipment
3.3 Experimental Matrix
4 Results
4.1 Test results
4.2 Variables data
5 Discussion and conclusion
6 Appendices
7 Document revision history
1. Introduction
This report summarizes results of 1 MeV equivalent neutron (‘displacement damage’ or ‘DD’)
testing of the ISL70227SEH dual operational amplifier (‘op amp’). The test was conducted in order
to determine the sensitivity of the part to displacement damage caused by the neutron environment.
Neutron fluences ranged from 5 x 1011 n/cm2 to 1 x 1014 n/cm2 in an approximately logarithmic
sequence. This project was carried out in collaboration with Honeywell Aerospace (Clearwater, FL),
and their support is gratefully acknowledged.
2: Part Description
The ISL70227SEH is a precision dual operational amplifier featuring very low noise, low offset
voltage, low input bias current and low temperature drift. These features plus its radiation tolerance
make the ISL70227SEH the ideal choice for applications requiring both high DC accuracy and AC
performance. The combination of precision performance, low noise and small footprint provides the
user with outstanding value and flexibility relative to similar competitive parts. Applications for these
amplifiers include active filters and power supply controls. The ISL70227SEH is available in a 10
lead hermetic ceramic flatpack and operates over the extended temperature range of -55°C to
+125°C.
1
The ISL70227SEH is implemented in the PR40 process, which is a complementary bipolar
flow using bonded wafer DI substrates. The process is used for a wide range of commercial and
hardened operational amplifiers, voltage references and temperature sensors. The DI substrate
enables vertical NPN and PNP devices, unlike the vertical NPN/lateral PNP combination used in
commercial junction isolated processes. The vertical PNP device improves amplifier AC
performance and total dose hardness, while the DI substrate eliminates latchup by either electrical
or SEE conditions. The PR40 process is in volume production under MIL-PRF-38535 certification in
the Palm Bay, Florida Intersil wafer fabrication facility.
3: Test Description
3.1 Irradiation Facilities
Neutron irradiation was performed by the Honeywell team at the Fast Burst Reactor (FBR)
facility at White Sands Missile Range (White Sands, NM), which provides a controlled 1MeV
equivalent neutron flux. Parts were tested in an unbiased configuration with all leads open. As
neutron irradiation activates many of the elements found in a packaged integrated circuit, the parts
exposed at the higher neutron levels required (as expected) significant ‘cooldown time’ before being
shipped back to Palm Bay for electrical testing.
3.2 Characterization equipment and procedures
Electrical testing was performed before and after irradiation using the production automated
test equipment (ATE). All electrical testing was performed at room temperature.
3.3 Experimental matrix
Testing proceeded in general accordance with the guidelines of MIL-STD-883 Test Method
1017. The experimental matrix consisted of five samples irradiated at 5 x 1011 n/cm2, five samples
irradiated at 2 x 1012 n/cm2, five samples irradiated at 1 x 1013 n/cm2 and five samples irradiated at 1
x 1014 n/cm2. Two control units were used to insure repeatable data.
4: Results
4.1 Test results
Neutron testing of the ISL70227SEH is complete and the results are reported in the balance of
this report.
4.2 Variables data
The plots in Figs. 1 through 17 show data plots for key parameters before and after irradiation
to each level. The plots show the average, minimum and maximum of each parameter as a function
of neutron irradiation for each of the two channels, with the exception of the two power supply
current plots which report the sum of the supply currents (positive and negative) of both of the two
channels. It should be carefully noted when reviewing the data that each neutron irradiation was
made on a different 5-unit sample; this is not total dose testing, where the damage is cumulative.
For guidance in interpreting the data we show the SMD post-total dose irradiation limits; the
ISL70227SEH is not specified or guaranteed for the neutron environment.
2
150.0
Negative input bias current, nA
100
Input offset voltage, µV
100.0
50.0
0.0
-50.0
-100.0
VIO1 Avg
VIO1 Min
VIO1 Max
VIO2 Avg
VIO2 Min
VIO2 Max
Spec limit
-150.0
1.00E+11
Pre-rad
Spec limit
1.00E+12
1.00E+13
0
-100
-200
-300
-400
-500
-600
-700
-800
Pre-rad
1.00E+11
1.00E+14
50.0
0
40.0
-100
Input offset current, nA
Positive input bias current, nA
100
-200
-300
-400
-600
-700
-800
1.00E+11
Pre-rad
IB1P Min
IB1P Max
IB2P Avg
IB2P Min
IB2P Max
Spec limit
Spec limit
1.00E+12
1.00E+13
IB2N Avg
IB2N Min
IB2N Max
Spec limit
Spec limit
1.00E+12
1.00E+13
1.00E+14
Fig. 3: ISL70227SEH negative input bias current, each
channel, as a function of neutron irradiation. Sample size
was 5 for each cell (5 x 1011 n/cm2, 2 x 1012 n/cm2, 1 x
1013 n/cm2 and 1 x 1014 n/cm2), with two control units. The
post-irradiation SMD limits are -25.0nA to 25.0nA.
Fig. 1: ISL70227SEH input offset voltage, each channel,
as a function of neutron irradiation. Sample size was 5 for
each cell (5 x 1011 n/cm2, 2 x 1012 n/cm2, 1 x 1013 n/cm2
and 1 x 1014 n/cm2), with two control units. The postirradiation SMD limits are -100.0µV to 100.0µV.
IB1P Avg
IB1N Min
IB1N Max
Neutron fluence, n/cm2
Neutron fluence, n/cm2
-500
IB1N Avg
30.0
20.0
IIO1 Avg
IIO1 Min
IIO1 Max
IIO2 Avg
IIO2 Min
IIO2 Max
Spec limit
Spec limit
10.0
0.0
-10.0
-20.0
-30.0
-40.0
-50.0
Pre-rad
1.00E+11
1.00E+14
Neutron fluence, n/cm2
1.00E+12
1.00E+13
1.00E+14
Neutron fluence, n/cm2
Fig. 4: ISL70227SEH input offset current, each channel,
as a function of neutron irradiation. Sample size was 5 for
each cell (5 x 1011 n/cm2, 2 x 1012 n/cm2, 1 x 1013 n/cm2
and 1 x 1014 n/cm2), with two control units. The postirradiation SMD limits are -25.0nA to 25.0nA.
Fig. 2: ISL70227SEH positive input bias current, each
channel, as a function of neutron irradiation. Sample size
was 5 for each cell (5 x 1011 n/cm2, 2 x 1012 n/cm2, 1 x
1013 n/cm2 and 1 x 1014 n/cm2), with two control units.
The post-irradiation SMD limits are -25.0nA to 25.0nA.
3
78.0
76.0
AVOL1P Min
AVOL1P Max
AVOL2P Avg
AVOL2P Min
AVOL2P Max
117.0
116.0
Spec limit
Positive PSRR, dB
Positive open loop gain, dB
77.0
118.0
AVOL1P Avg
75.0
74.0
73.0
72.0
71.0
70.0
Pre-rad
1.00E+11
115.0
114.0
113.0
112.0
PSRR1P Avg
PSRR1P Min
111.0
PSRR1P Max
PSRR2P Avg
PSRR2P Min
PSRR2P Max
110.0
1.00E+12
1.00E+13
109.0
Pre-rad
1.00E+11
1.00E+14
1.00E+13
1.00E+14
Fig. 7: ISL70227SEH positive power supply rejection
ratio (PSRR), each channel, as a function of neutron
irradiation. Sample size was 5 for each cell (5 x 1011
n/cm2, 2 x 1012 n/cm2, 1 x 1013 n/cm2 and 1 x 1014
n/cm2), with two control units. The post-irradiation SMD
limit is 110.0dB minimum.
Fig. 5: ISL70227SEH positive open-loop voltage gain,
each channel, as a function of neutron irradiation.
Sample size was 5 for each cell (5 x 1011 n/cm2, 2 x 1012
n/cm2, 1 x 1013 n/cm2 and 1 x 1014 n/cm2), with two
control units. The post-irradiation SMD limit is 60.0dB
minimum.
120.0
80.0
AVOL1P Avg
AVOL1P Min
AVOL1P Max
AVOL2P Avg
AVOL2P Min
AVOL2P Max
118.0
Spec limit
Negative PSRR, dB
Negative open loop gain, dB
1.00E+12
Neutron fluence, n/cm2
Neutron fluence, n/cm2
78.0
Spec limit
76.0
74.0
72.0
116.0
114.0
112.0
110.0
70.0
PSRR1N Avg
PSRR1N Min
PSRR1N Max
PSRR2N Avg
PSRR2N Min
PSRR2N Max
Spec limit
68.0
Pre-rad
1.00E+11
1.00E+12
1.00E+13
108.0
Pre-rad
1.00E+11
1.00E+14
1.00E+12
1.00E+13
1.00E+14
Neutron fluence, n/cm2
Neutron fluence, n/cm2
Fig. 8: ISL70227SEH negative power supply rejection
ratio (PSRR), each channel, as a function of neutron
irradiation. Sample size was 5 for each cell (5 x 1011
n/cm2, 2 x 1012 n/cm2, 1 x 1013 n/cm2 and 1 x 1014
n/cm2), with two control units. The post-irradiation SMD
limit is 110.0dB minimum.
Fig. 6: ISL70227SEH negative open-loop voltage gain,
each channel, as a function of neutron irradiation.
Sample size was 5 for each cell (5 x 1011 n/cm2, 2 x 1012
n/cm2, 1 x 1013 n/cm2 and 1 x 1014 n/cm2), with two
control units. The post-irradiation SMD limit is 60.0dB
minimum.
4
50.0
180.0
45.0
Output current, sourcing, mA
Positive CMRR, dB
170.0
160.0
150.0
140.0
130.0
120.0
110.0
100.0
Pre-rad
1.00E+11
CMRR1P Avg
CMRR1P Min
CMRR1P Max
CMRR2P Avg
CMRR2P Min
CMRR2P Max
35.0
30.0
25.0
20.0
15.0
10.0
5.0
Spec limit
1.00E+12
40.0
1.00E+13
0.0
Pre-rad
1.00E+11
1.00E+14
Neutron fluence, n/cm2
Output current, sinking, mA
Negative CMRR, dB
1.00E+14
0.0
170.0
160.0
150.0
140.0
130.0
100.0
Pre-rad
1.00E+11
1.00E+13
Fig. 11: ISL70227SEH sourcing output current, each
channel, as a function of neutron irradiation. Sample size
was 5 for each cell (5 x 1011 n/cm2, 2 x 1012 n/cm2, 1 x
1013 n/cm2 and 1 x 1014 n/cm2), with two control units. A
post-irradiation SMD limit is not specified; the 10mA line
is an ATE limit.
180.0
110.0
1.00E+12
IO1SRC Min
IO2SRC Avg
IO2SRC Max
Neutron fluence, n/cm2
Fig. 9: ISL70227SEH positive common-mode rejection
ratio (CMRR), each channel, as a function of neutron
irradiation. Sample size was 5 for each cell (5 x 1011
n/cm2, 2 x 1012 n/cm2, 1 x 1013 n/cm2 and 1 x 1014
n/cm2), with two control units. The post-irradiation SMD
limit is 115.0dB minimum.
120.0
IO1SRC Avg
IO1SRC Max
IO2SRC Min
Spec limit
CMRR1P Avg
CMRR1P Max
CMRR2P Min
Spec limit
1.00E+12
CMRR1P Min
CMRR2P Avg
CMRR2P Max
1.00E+13
-10.0
Neutron fluence, n/cm2
IO1SNK Min
IO2SNK Avg
IO2SNK Max
-20.0
-30.0
-40.0
-50.0
-60.0
Pre-rad
1.00E+11
1.00E+14
IO1SNK Avg
IO1SNK Max
IO2SNK Min
Spec limit
1.00E+12
1.00E+13
1.00E+14
Neutron fluence, n/cm2
Fig. 12: ISL70227SEH sinking output current, each
channel, as a function of neutron irradiation. Sample size
was 5 for each cell (5 x 1011 n/cm2, 2 x 1012 n/cm2, 1 x
1013 n/cm2 and 1 x 1014 n/cm2), with two control units. A
post-irradiation SMD limit is not specified; the 10mA line is
an ATE limit.
Fig. 10: ISL70227SEH negative common-mode
rejection ratio (CMRR), each channel, as a function of
neutron irradiation. Sample size was 5 for each cell (5 x
1011 n/cm2, 2 x 1012 n/cm2, 1 x 1013 n/cm2 and 1 x 1014
n/cm2), with two control units. The post-irradiation SMD
limit is 115.0dB minimum.
5
10.0
3.8
8.0
Negative slew rate, V/µs
Supply current, mA
6.0
4.0
2.0
ICC Avg
ICC Min
0.0
ICC Max
IEE Avg
IEE Min
IEE Max
Spec limit
Spec limit
-2.0
-4.0
-6.0
3.3
2.8
2.3
-8.0
-10.0
Pre-rad
1.00E+11
1.00E+12
1.00E+13
SLEW1N Avg
SLEW1N Max
SLEW2N Min
Spec limit
1.8
1.00E+11
Pre-rad
1.00E+14
Neutron fluence, n/cm2
SLEW1N Min
SLEW2N Avg
SLEW2N Max
1.00E+12
1.00E+13
1.00E+14
Neutron fluence, n/cm2
Fig. 13: ISL70227SEH positive and negative supply
current, sum of both channels, as a function of neutron
irradiation. Sample size was 5 for each cell (5 x 1011
n/cm2, 2 x 1012 n/cm2, 1 x 1013 n/cm2 and 1 x 1014 n/cm2),
with two control units. The post-irradiation SMD limit is +/7.4mA maximum.
Fig. 15: ISL70227SEH negative slew rate, each
channel, as a function of neutron irradiation. Sample
size was 5 for each cell (5 x 1011 n/cm2, 2 x 1012 n/cm2,
1 x 1013 n/cm2 and 1 x 1014 n/cm2), with two control
units. The post-irradiation SMD limit is 2.0V/µs
minimum.
120.0
3.8
3.3
Rise time, ns
Postive slew rate, V/µs
100.0
2.8
2.3
1.8
1.00E+11
Pre-rad
SLEW1P Avg
SLEW1P Max
SLEW2P Min
Spec limit
SLEW1P Min
SLEW2P Avg
SLEW2P Max
1.00E+12
1.00E+13
TRISE1 Avg
TRISE1 Max
TRISE2 Min
Spec limit
TRISE1 Min
TRISE2 Avg
TRISE2 Max
80.0
60.0
40.0
20.0
0.0
Pre-rad
1.00E+11
1.00E+14
1.00E+12
1.00E+13
1.00E+14
Neutron fluence, n/cm2
Neutron fluence, n/cm2
Fig. 16: ISL70227SEH small-signal rise time, each
channel, as a function of neutron irradiation. Sample size
was 5 for each cell (5 x 1011 n/cm2, 2 x 1012 n/cm2, 1 x
1013 n/cm2 and 1 x 1014 n/cm2), with two control units.
The post-irradiation SMD limit is 100.0ns maximum.
Fig. 14: ISL70227SEH positive slew rate, each channel,
as a function of neutron irradiation. Sample size was 5 for
each cell (5 x 1011 n/cm2, 2 x 1012 n/cm2, 1 x 1013 n/cm2
and 1 x 1014 n/cm2), with two control units. The postirradiation SMD limit is 2.0V/µs minimum.
6
units. The post-irradiation SMD limit is 100.0ns
maximum.
120.0
Fall time, ns
100.0
TFALL1 Avg
TFALL1 Max
TFALL2 Min
Spec limit
TFALL1 Min
TFALL2 Avg
TFALL2 Max
80.0
60.0
40.0
20.0
0.0
Pre-rad
1.00E+11
1.00E+12
1.00E+13
1.00E+14
Neutron fluence, n/cm2
Fig. 17: ISL70227SEH small-signal fall time, +/-15V
supplies, as a function of neutron irradiation. Sample
size was 5 for each cell (5 x 1011 n/cm2, 2 x 1012 n/cm2,
1 x 1013 n/cm2 and 1 x 1014 n/cm2), with two control
5: Discussion and conclusion
This document reports the results of neutron testing of the ISL70227SEH dual operational
amplifier. Samples were irradiated to levels of 5 x 1011 n/cm2, 2 x 1012 n/cm2, 1 x 1013 n/cm2 and 1 x
1014 n/cm2. ATE characterization testing was performed before and after the irradiations, and two
control units were used to insure repeatable data. Variables data for selected parameters is
presented in Figs. 1 through 17. We will discuss the results on a parameter by parameter basis. It
should be realized again when reviewing the data that each neutron irradiation was made on a
different 5-unit sample; this is not total dose testing, where the damage is cumulative. The 2 x 10 12
n/cm2 level is of some interest in the context of recent developments in the JEDEC community,
where the discrete component vendor community have signed up for characterization testing (but
not for acceptance testing) at this level.
The ISL70227SEH is not formally designed for neutron hardness. The part is built in a DI
complementary bipolar process. These bipolar transistors are minority carrier devices, obviously,
and may be expected to be sensitive to displacement damage (DD) at the higher levels. This
expectation turned out to be correct. We will discuss the results on a parameter by parameter basis
and then draw some conclusions.
Input parameters are key to operational amplifier performance. The input offset voltage (Fig. 1)
showed good stability, with the parameter well within the +/-100µV post-radiation SMD limits. The
positive and negative input bias current results (Figs. 2 and 3) were very stable and stayed well
within the tight 25.0nA SMD limits through the 1 x 1013 n/cm2 level, and degraded to approximately
+/-500nA at the 1 x 1014 n/cm2 level. The input offset current data (Fig. 4) fell within the -25.0nA to
25.0nA SMD limits at the 1 x 1013 n/cm2 level.
The positive and negative open-loop voltage gain (Figs. 5 and 6) was stable out to 1 x 1013
n/cm2 but increased significantly at the 1 x 1014 n/cm2 level. The cause of this response is not
known.
7
The positive and negative power supply rejection ratio (PSRR) (Figs. 7 and 8) and the positive
and negative common-mode rejection ratio (CMRR) (Figs. 9 and 10) showed gradual degradation
out to 1 x 1014 n/cm2, with good margin over the SMD limits.
The sourcing and sinking output current (Figs. 11 and 12) showed good stability out to 1 x 1014
n/cm2.
The positive and negative power supply current (Fig. 13) showed good stability out to 1 x 1014
n/cm2.
The positive and negative slew rate (Figs. 14 and 15) and the rise and fall time (Figs. 16 and 17)
showed good stability out to 1 x 1014 n/cm2.
We conclude that the ISL70227SEH is capable of post 1 x 1013 n/cm2 operation with selected
parametric relaxations, mostly in the input bias current specification. The part is not capable of post
1 x 1014 n/cm2 operation as some parameters were outside the limits; the part did, however, remain
functional.
6: Appendices
6.1: Reported parameters.
Fig.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
Parameter
Limit, low
Limit, high
Units
-110
-25
-25
-25
60.0
60.0
110
110
115
115
10.0
10.0
+110
+25
+25
+25
-
µV
nA
nA
nA
dB
dB
dB
dB
dB
dB
mA
mA
-7.4
2.0
2.0
100.0
100.0
+7.4
-
mA
V/µs
V/µs
ns
ns
Input offset voltage
Positive input bias current
Negative input bias current
Input offset current
Positive open-loop gain
Negative open-loop gain
Positive power supply rejection ratio
Negative power supply rejection ratio
Positive common-mode rejection ratio
Positive common-mode rejection ratio
Output current, sourcing
Output current, sinking
Positive and negative power supply
current
Positive slew rate
Negative slew rate
Positive rise time
Negative rise time
7: Document revision history
Revision
0
Date
3 November 2013
Pages
All
Comments
Original issue
8
Notes