5962-98533

REVISIONS
LTR
DESCRIPTION
DATE (YR-MO-DA)
APPROVED
A
Add appendix A. - rrp
98-06-09
R. MONNIN
B
Drawing updated to reflect current requirements. - rrp
05-03-14
R. MONNIN
C
Add dose rate footnote under paragraph 1.5 and Table I.
Delete Accelerated aging, Neutron and Dose rate induced latchup tests. - ro
05-12-05
R. MONNIN
D
Under paragraph 1.5, delete dose rate latch up and substitute Single event
latch up limit. Delete paragraph 4.4.4.2 Dose rate burnout.
Update boilerplate paragraphs to current MIL-PRF-38535 requirements. - ro
10-11-09
C. SAFFLE
E
Add device type 02 and figure A-2. Make change to paragraph 3.2.4 and
delete table III. Make changes to footnote 3/ and add footnotes 4/ and 5/ as
specified under paragraph 1.5. Make changes to footnotes 1/ and 2/ as
specified table I. Add paragraph A.1.5. Delete device class M references. - ro
13-07-30
C. SAFFLE
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PMIC N/A
PREPARED BY
Rajesh Pithadia
STANDARD
MICROCIRCUIT
DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
http://www.landandmaritime.dla.mil
CHECKED BY
Rajesh Pithadia
APPROVED BY
THIS DRAWING IS AVAILABLE
FOR USE BY ALL
DEPARTMENTS
AND AGENCIES OF THE
DEPARTMENT OF DEFENSE
AMSC N/A
Raymond Monnin
DRAWING APPROVAL DATE
98-01-06
REVISION LEVEL
E
MICROCIRCUIT, LINEAR, RADIATION
HARDENED, VERY LOW NOISE QUAD,
OPERATIONAL AMPLIFIER, MONOLITHIC
SILICON
SIZE
CAGE CODE
A
67268
SHEET
DSCC FORM 2233
APR 97
5962-98533
1 OF 21
5962-E002-12
1. SCOPE
1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device class Q) and
space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or
Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN.
1.2 PIN. The PIN is as shown in the following example:
5962
R
98533
Federal
stock class
designator
\
RHA
designator
(see 1.2.1)
01
V
X
C
Device
type
(see 1.2.2)
Device
class
designator
(see 1.2.3)
Case
outline
(see 1.2.4)
Lead
finish
(see 1.2.5)
/
\/
Drawing number
1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are
marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.
1.2.2 Device type(s). The device type(s) identify the circuit function as follows:
Device type
Generic number
Circuit function
01
HS-OP470ARH
Radiation hardened , dielectrically isolated,
very low noise, quad, operational amplifier
02
HS-OP470AEH
Radiation hardened, dielectrically isolated,
very low noise, quad, operational amplifier
1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as
follows:
Device class
Device requirements documentation
Q or V
Certification and qualification to MIL-PRF-38535
1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows:
Outline letter
X
Descriptive designator
CDFP3-F14
Terminals
Package style
14
Flat pack
1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V.
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REVISION LEVEL
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SHEET
2
1.3 Absolute maximum ratings. 1/
Voltage between V+ and V- .........................................................................
Differential input voltage ..............................................................................
Voltage at either input terminal ....................................................................
Peak output current .....................................................................................
Junction temperature (TJ) ............................................................................
Storage temperature range ..........................................................................
Lead temperature (soldering, 10 seconds) ..................................................
Thermal resistance, junction-to-case (θJC) ..................................................
40 V
7V
+VS to -VS
Indefinite (one amplifier shorted to GND)
+175°C
-65°C to +150°C
+275°C
30°C/W
Thermal resistance, junction-to-ambient (θJA) ............................................. 116°C/W
1.4 Recommended operating conditions.
Supply voltage range ................................................................................... ±5 V to ±15 V
Input low voltage range ............................................................................... 0 V to +0.8 V
Common-mode input voltage (VCMIN) ......................................................... ≤ 1/2 (V+ - V-)
Load resistance (RL) ................................................................................... ≥ 2 kΩ
Ambient operating temperature range (TA) ................................................. -55°C to +125°C
1.5 Radiation features.
Maximum total dose available (dose rate = 50 – 300 rads(Si)/s):
Device type 01 .........................................................................................
Device type 02 .........................................................................................
Maximum total dose available (dose rate ≤ 0.01 rad(Si)/s):
Device type 02 .........................................................................................
Single event latch up (SEL) .........................................................................
100 krads(Si) 2/
100 krads(Si) 3/
50 krads(Si) 3/
No latch up 4/
______
1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the
maximum levels may degrade performance and affect reliability.
2/ Device type 01 may be dose rate sensitive in a space environment and may demonstrate enhanced low dose rate
effects. The radiation end point limits for the noted parameters are guaranteed only for the conditions as
specified in MIL-STD-883, method 1019, condition A to a maximum total dose of 100 krads(Si).
3/ Device type 02 radiation end point limits for the noted parameters are guaranteed only for the conditions as
specified in MIL-STD-883, method 1019, condition A to a maximum total dose of 100 krads(Si), and condition D to a
maximum total dose of 50 krads(Si).
4/ Devices use dielectrically isolated (DI) technology and latch up is physically not possible.
STANDARD
MICROCIRCUIT DRAWING
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COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-98533
A
REVISION LEVEL
E
SHEET
3
2. APPLICABLE DOCUMENTS
2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part
of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the
solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATION
MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.
DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-883 MIL-STD-1835 -
Test Method Standard Microcircuits.
Interface Standard Electronic Component Case Outlines.
DEPARTMENT OF DEFENSE HANDBOOKS
MIL-HDBK-103 MIL-HDBK-780 -
List of Standard Microcircuit Drawings.
Standard Microcircuit Drawings.
(Copies of these documents are available online at http://quicksearch.dla.mil or from the Standardization Document Order
Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text
of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a
specific exemption has been obtained.
3. REQUIREMENTS
3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with
MIL-PRF-38535 and as specified herein or as modified in the device manufacturer's Quality Management (QM) plan. The
modification in the QM plan shall not affect the form, fit, or function as described herein.
3.1.1 Microcircuit die. For the requirements of microcircuit die, see appendix A to this document.
3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified
in MIL-PRF-38535 and herein for device classes Q and V.
3.2.1 Case outline. The case outline shall be in accordance with 1.2.4 herein.
3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1.
3.2.3 Timing diagrams. The timing diagrams shall be as specified on figure 2.
3.2.4 Radiation exposure circuit. The radiation exposure circuit shall be maintained by the manufacturer under document
revision level control and shall be made available to the preparing and acquiring activity upon request.
3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the
electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full
ambient operating temperature range.
3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical
tests for each subgroup are defined in table I.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-98533
A
REVISION LEVEL
E
SHEET
4
TABLE I. Electrical performance characteristics.
Test
Input offset voltage
Input bias current
Symbol
Conditions 1/ 2/
-55°C ≤ TA ≤ +125°C
unless otherwise specified
VIO
VCM = 0 V
+IIB
-IIB
Group A
subgroups
Device
type
1, 3
01, 02
Max
2.1
2
-2.6
2.6
M, D, P, L, R
1
-2.6
2.6
3/
1
-130
130
IIO
2
-105
105
-RS = 100 Ω
3
-235
235
M, D, P, L, R
1
-630
630
3/
1
-130
130
+RS = 100 Ω,
2
-105
105
-RS = 10 kΩ
3
-235
235
1
-630
630
-42
42
VCM = 0 V,
VCM = 0 V, 3/
1
+RS = 10 kΩ,
2
-28
28
-RS = 10 kΩ
3
-235
235
1
-630
630
M, D, P, L, R
Large signal voltage gain
+AVOL
01, 02
VOUT = 0 V and +10 V, 3/
1
RL = 2 kΩ
2
150
3
75
1
40
VOUT = 0 V and -10 V, 3/
1
110
RL = 2 kΩ
2
150
3
75
1
40
M, D, P, L, R
-AVOL
01, 02
+RS = 10 kΩ,
M, D, P, L, R
Input offset current
Unit
Min
-2.1
3/
VCM = 0 V,
Limits
M, D, P, L, R
01, 02
110
mV
nA
nA
kV/V
See footnotes at end of table.
STANDARD
MICROCIRCUIT DRAWING
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DSCC FORM 2234
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SIZE
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REVISION LEVEL
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SHEET
5
TABLE I. Electrical performance characteristics - Continued.
Test
Common mode rejection
ratio
Symbol
Conditions 1/ 2/
-55°C ≤ TA ≤ +125°C
unless otherwise specified
+CMRR
V+ = 3 V, V- = -27 V,
Group A
subgroups
Device
type
1, 2, 3
01, 02
3/
Limits
Min
80
Unit
Max
dB
∆VCM = +12 V,
VOUT = -12 V
-CMRR
V+ = 27 V, V- = -3 V,
3/
80
∆VCM = -12 V,
VOUT = +12 V
Output voltage swing
+VOUT
1, 2, 3
RL = 2 kΩ 3/
01, 02
12
RL = 10 kΩ 3/
-VOUT
Output current
+IOUT
RL = 2 kΩ 3/
-11
RL = 10 kΩ 3/
-12
1, 2, 3
VOUT = -5 V, 3/
M, D, P, L, R
-IOUT
Power supply rejection ratio
01, 02
1
VOUT = +5 V 3/
M, D, P, L, R
Quiescent power supply
current
V
11
mA
10
8
1, 2, 3
-10
1
-8
+ICC
IOUT = 0 mA 3/
1, 2, 3
-ICC
IOUT = 0 mA 3/
1, 2, 3
+PSRR
∆VSUP = 10 V, 3/
1, 2, 3
01, 02
5.5
mA
-5.5
01, 02
dB
80
V- = -15 V,
V+ = 10 V and 20 V
-PSRR
∆VSUP = 10 V, 3/
1, 2, 3
80
V+ = 15 V,
V- = -10 V and -20 V
See footnotes at end of table.
STANDARD
MICROCIRCUIT DRAWING
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COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
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REVISION LEVEL
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TABLE I. Electrical performance characteristics - Continued.
Test
Symbol
Conditions 1/ 2/
-55°C ≤ TA ≤ +125°C
unless otherwise specified
Group A
subgroups
Device
type
TR
VOUT = 0 V to 200 mV, 4/
4, 5, 6
01, 02
Limits
Min
Rise and fall time
Unit
Max
200
ns
10% ≤ TR ≤ 90%,
see figure 2
TF
4, 5, 6
VOUT = 0 V to -200 mV, 4/
200
10% ≤ TR ≤ 90%,
see figure 2
TS
Settling time
AVCL = -1,
5/ 6/ 7/
µs
9
01, 02
6
4, 5, 6
01, 02
165
4, 5
01, 02
see figure 2
Quiescent power
consumption
PC
Slew rate
+SR
VOUT = 0 V,
5/ 6/ 8/
IOUT = 0 mA
VOUT = -3 V to +3 V, 4/
see figure 2
M, D, P, L, R
-SR
VOUT = +3 V to -3 V, 4/
see figure 2
M, D, P, L, R
+OS
Overshoot
mW
see figure 2
-OS
VOUT = 0 V to -200 mV, 4/
see figure 2
Differential input resistance
RIN
Input noise voltage density
EN
Input noise current density
IN
Full power bandwidth
FPBW
VCM = 0 V
5/ 6/
RS = 20 Ω,
6
1.35
4
1.2
4, 5
1.7
6
1.35
4
1.2
4
VOUT = 0 V to 200 mV, 4/
5/ 6/
1.7
01, 02
V/µs
45
5, 6
50
4
45
5, 6
50
4
01, 02
4
01, 02
250
kΩ
nV /
6
Hz
fO = 1000 Hz
RS = 2 MΩ,
%
5/ 6/
4
01, 02
4
01, 02
pA /
3
Hz
fO = 1000 Hz
VPK = 10 V 5/ 6/ 9/
32
kHz
See footnotes at end of table.
STANDARD
MICROCIRCUIT DRAWING
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COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
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REVISION LEVEL
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SHEET
7
TABLE I. Electrical performance characteristics - Continued.
Test
Minimum closed loop
stable gain
Symbol
Conditions 1/ 2/
-55°C ≤ TA ≤ +125°C
unless otherwise specified
CLSG
RL = 2 kΩ, 5/ 6/
Group A
subgroups
Device
type
4, 5, 6
01, 02
4
01, 02
4
01, 02
Limits
Min
1
Unit
Max
V/V
CL = 50 pF
Output resistance
ROUT
Open loop
Channel separation
CS
RS = 1 kΩ,
5/ 6/
5/ 6/
150
90
Ω
dB
AVCL = 100 V/V,
VIN = 100 mV RMS at
10 kHz, referenced to input
1/
RHA device type 01 supplied to this drawing will meet all levels M, D, P, L, and R of irradiation. However, device type 01 is
only tested at the “R” level in accordance with MIL-STD-883 method 1019 condition A (see 1.5 herein).
RHA device type 02 supplied to this drawing will meet all levels M, D, P, L, and R of irradiation for condition A
and levels M, D, P, and L for condition D. However, device type 02 is only tested at the “R” level in accordance with
MIL-STD-883, method 1019, condition A and tested at the “L” level in accordance with MIL-STD-883, method 1019,
condition D (see 1.5 herein).
Pre and post irradiation values are identical unless otherwise specified in table I. When performing post irradiation
electrical measurements for any RHA level, TA = +25°C.
2/
RHA device type 01 may be dose rate sensitive in a space environment and may demonstrate enhanced low dose rate
effects. Radiation end point limits for the noted parameters are guaranteed only for the conditions specified in
MIL-STD-883, method 1019, condition A.
3/
Unless otherwise specified, device tested at: supply voltage = ±15 V, source resistance (RS) = 100 Ω,
load resistance (RL) = 100 kΩ, VOUT = 0 V.
4/
Unless otherwise specified, device tested at: supply voltage = ±15 V, source resistance (RS) = 50 Ω,
load resistance (RL) = 2 kΩ, load capacitance (CL) = 50 pF, AVCL = 1 V/V.
5/
Unless otherwise specified, device tested at: supply voltage = ±15 V, load resistance (RL) = 2 kΩ,
load capacitance (CL) = 50 pF, AVCL = 1 V/V.
6/
If not tested, shall be guaranteed to the limits specified in table I herein.
7/
Settling time measured from the 90% point of a 10 V input pulse to within 10 mV of the settled value.
8/
Quiescent power consumption based upon quiescent supply current test maximum. No load on outputs.
9/
Full power bandwidth guarantee based on slew rate measurement using FPBW = slew rate / (2πVPK).
STANDARD
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Device types
01 and 02
Case outline
X
Terminal number
Terminal symbol
1
OUT 1
2
-IN 1
3
+IN 1
4
V+
5
+IN 2
6
-IN 2
7
OUT 2
8
OUT 3
9
-IN 3
10
+IN 3
11
V-
12
+IN 4
13
-IN 4
14
OUT 4
FIGURE 1. Terminal connections.
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FIGURE 2. Timing diagrams.
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3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturer's PIN may also be
marked. For packages where marking of the entire SMD PIN is not feasible due to space limitations, the manufacturer has the
option of not marking the "5962-" on the device. For RHA product using this option, the RHA designator shall still be marked.
Marking for device classes Q and V shall be in accordance with MIL-PRF-38535.
3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a "QML" or "Q" as required in
MIL-PRF-38535.
3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535
listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). The certificate of compliance
submitted to DLA Land and Maritime-VA prior to listing as an approved source of supply for this drawing shall affirm that the
manufacturer's product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein.
3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 shall
be provided with each lot of microcircuits delivered to this drawing.
4. VERIFICATION
4.1 Sampling and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance with
MIL-PRF-38535 or as modified in the device manufacturer's Quality Management (QM) plan. The modification in the QM plan
shall not affect the form, fit, or function as described herein.
4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted
on all devices prior to qualification and technology conformance inspection.
4.2.1 Additional criteria for device classes Q and V.
a.
The burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in the
device manufacturer's QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under
document revision level control of the device manufacturer's Technology Review Board (TRB) in accordance with
MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall
specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in
method 1015 of MIL-STD-883.
b.
Interim and final electrical test parameters shall be as specified in table IIA herein.
c.
Additional screening for device class V beyond the requirements of device class Q shall be as specified in
MIL-PRF-38535, appendix B.
4.3 Qualification inspection for device classes Q and V. Qualification inspection for device classes Q and V shall be in
accordance with MIL-PRF-38535. Inspections to be performed shall be those specified in MIL-PRF-38535 and herein for groups
A, B, C, D, and E inspections (see 4.4.1 through 4.4.4).
4.4 Conformance inspection. Technology conformance inspection for classes Q and V shall be in accordance with
MIL-PRF-38535 including groups A, B, C, D, and E inspections and as specified herein.
4.4.1 Group A inspection.
a.
Tests shall be as specified in table IIA herein.
b.
Subgroups 7, 8, 10, and 11 in table I, method 5005 of MIL-STD-883 shall be omitted.
STANDARD
MICROCIRCUIT DRAWING
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DSCC FORM 2234
APR 97
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REVISION LEVEL
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11
TABLE IIA. Electrical test requirements.
Test requirements
Subgroups
(in accordance with
MIL-PRF-38535, table III)
Device
class Q
Device
class V
Interim electrical
parameters (see 4.2)
1, 4
1, 4
Final electrical
parameters (see 4.2)
1,2,3,4, 1/
5,6,9
1,2,3, 1/ 2/
4,5,6,9
Group A test
requirements (see 4.4)
1,2,3,4,5,6,9
1,2,3,4,5,6,9
Group C end-point electrical
parameters (see 4.4)
1,2,3,4,5,6,9
1,2,3,4,5, 2/
6,9
Group D end-point electrical
parameters (see 4.4)
1, 4
1, 4
Group E end-point electrical
parameters (see 4.4)
1, 4
1, 4
1/
2/
PDA applies to subgroup 1. For class V to subgroups 1 and ∆.
Delta limits (see table IIB) shall be required and the delta values
shall be computed with reference to the zero hour electrical
parameters (see table I).
TABLE IIB. Burn-in and operating life test delta parameters. (TA = +25°C)
Parameters
Input offset voltage
Input bias current
Input offset current
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Symbol
Delta limits
VIO
±2 mV
+IIB / -IIB
±75 nA
IIO
±75 nA
SIZE
5962-98533
A
REVISION LEVEL
E
SHEET
12
4.4.2 Group C inspection. The group C inspection end-point electrical parameters shall be as specified in table IIA herein.
4.4.2.1 Additional criteria for device classes Q and V. The steady-state life test duration, test condition and test temperature,
or approved alternatives shall be as specified in the device manufacturer's QM plan in accordance with MIL-PRF-38535. The
test circuit shall be maintained under document revision level control by the device manufacturer's TRB in accordance with
MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the
inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1005 of
MIL-STD-883.
4.4.3 Group D inspection. The group D inspection end-point electrical parameters shall be as specified in table IIA herein.
4.4.4 Group E inspection. Group E inspection is required only for parts intended to be marked as radiation hardness assured
(see 3.5 herein).
a.
End-point electrical parameters shall be as specified in table IIA herein.
b.
For device classes Q and V, the devices or test vehicle shall be subjected to radiation hardness assured tests as
specified in MIL-PRF-38535 for the RHA level being tested. All device classes must meet the postirradiation end-point
electrical parameter limits as defined in table I at TA = +25°C ±5°C, after exposure, to the subgroups specified in
table IIA herein.
4.4.4.1 Total dose irradiation testing. Total dose irradiation testing shall be performed in accordance with MIL-STD-883
method 1019, condition A and as specified herein for device types 01 and 02. In addition, for device type 02 a low dose rate test
shall be performed in accordance with MIL-STD-883 method 1019, condition D and as specified herein.
5. PACKAGING
5.1 Packaging requirements. The requirements for packaging shall be in accordance with MIL-PRF-38535 for device classes
Q and V.
6. NOTES
6.1 Intended use. Microcircuits conforming to this drawing are intended for use for Government microcircuit applications
(original equipment), design applications, and logistics purposes.
6.1.1 Replaceability. Microcircuits covered by this drawing will replace the same generic device covered by a contractor
prepared specification or drawing.
6.2 Configuration control of SMD's. All proposed changes to existing SMD's will be coordinated with the users of record for
the individual documents. This coordination will be accomplished using DD Form 1692, Engineering Change Proposal.
6.3 Record of users. Military and industrial users should inform DLA Land and Maritime when a system application requires
configuration control and which SMD's are applicable to that system. DLA Land and Maritime will maintain a record of users and
this list will be used for coordination and distribution of changes to the drawings. Users of drawings covering microelectronic
devices (FSC 5962) should contact DLA Land and Maritime -VA, telephone (614) 692-8108.
6.4 Comments. Comments on this drawing should be directed to DLA Land and Maritime -VA, Columbus, Ohio 43218-3990,
or telephone (614) 692-0540.
6.5 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein are defined in
MIL-PRF-38535 and MIL-HDBK-1331.
6.6 Sources of supply.
6.6.1 Sources of supply for device classes Q and V. Sources of supply for device classes Q and V are listed in QML-38535.
The vendors listed in QML-38535 have submitted a certificate of compliance (see 3.6 herein) to DLA Land and Maritime -VA and
have agreed to this drawing.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-98533
A
REVISION LEVEL
E
SHEET
13
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-98533
A.1 SCOPE
A.1.1 Scope. This appendix establishes minimum requirements for microcircuit die to be supplied under the Qualified
Manufacturers List (QML) Program. QML microcircuit die meeting the requirements of MIL-PRF-38535 and the manufacturers
approved QM plan for use in monolithic microcircuits, multi-chip modules (MCMs), hybrids, electronic modules, or devices using
chip and wire designs in accordance with MIL-PRF-38534 are specified herein. Two product assurance classes consisting of
military high reliability (device class Q) and space application (device class V) are reflected in the Part or Identification Number
(PIN). When available, a choice of Radiation Hardiness Assurance (RHA) levels are reflected in the PIN.
A.1.2 PIN. The PIN is as shown in the following example:
5962
R
Federal
stock class
designator
\
RHA
designator
(see A.1.2.1)
98533
01
V
9
A
Device
type
(see A.1.2.2)
Device
class
designator
(see A.1.2.3)
Die
code
Die
details
(see A.1.2.4)
/
\/
Drawing number
A.1.2.1 RHA designator. Device classes Q and V RHA identified die meet the MIL-PRF-38535 specified RHA levels. A dash
(-) indicates a non-RHA die.
A.1.2.2 Device type(s). The device type(s) identify the circuit function as follows:
Device type
Generic number
Circuit function
01
HS-OP470ARH
Radiation hardened, dielectrically
isolated, very low noise, quad, operational
amplifier
02
HS-OP470AEH
Radiation hardened, dielectrically isolated,
very low noise, quad, operational amplifier
A.1.2.3 Device class designator.
Device class
Q or V
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
Device requirements documentation
Certification and qualification to the die requirements of MIL-PRF-38535
SIZE
5962-98533
A
REVISION LEVEL
E
SHEET
14
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-98533
A.1.2.4 Die details. The die details designation is a unique letter which designates the die's physical dimensions, bonding
pad location(s) and related electrical function(s), interface materials, and other assembly related information, for each product
and variant supplied to this appendix.
A.1.2.4.1 Die physical dimensions.
Die type
Figure number
01
02
A-1
A-2
A.1.2.4.2 Die bonding pad locations and electrical functions.
Die type
Figure number
01
02
A-1
A-2
A.1.2.4.3 Interface materials.
Die type
Figure number
01
02
A-1
A-2
A.1.2.4.4 Assembly related information.
Die type
Figure number
01
02
A-1
A-2
A.1.3 Absolute maximum ratings. See paragraph 1.3 herein for details.
A.1.4 Recommended operating conditions. See paragraph 1.4 herein for details.
A.1.5 Radiation features. See paragraph 1.5 herein for details.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-98533
A
REVISION LEVEL
E
SHEET
15
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-98533
A.2 APPLICABLE DOCUMENTS.
A.2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a
part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in
the solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATION
MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.
DEPARTMENT OF DEFENSE STANDARD
MIL-STD-883 - Test Method Standard Microcircuits.
DEPARTMENT OF DEFENSE HANDBOOKS
MIL-HDBK-103 - List of Standard Microcircuit Drawings.
MIL-HDBK-780 - Standard Microcircuit Drawings.
(Copies of these documents are available online at http://quicksearch.dla.mil or from the Standardization Document Order
Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
A.2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the
text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a
specific exemption has been obtained.
A.3 REQUIREMENTS
A.3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with
MIL-PRF-38535 and as specified herein or as modified in the device manufacturer’s Quality Management (QM) plan. The
modification in the QM plan shall not affect the form, fit, or function as described herein.
A.3.2 Design, construction and physical dimensions. The design, construction, and physical dimensions shall be as specified
in MIL-PRF-38535 and herein and the manufacturer’s QM plan for device classes Q and V.
A.3.2.1 Die physical dimensions. The die physical dimensions shall be as specified in A.1.2.4.1 and on figure A-1.
A.3.2.2 Die bonding pad locations and electrical functions. The die bonding pad locations and electrical functions shall be as
specified in A.1.2.4.2 and on figure A-1.
A.3.2.3 Interface materials. The interface materials for the die shall be as specified in A.1.2.4.3 and on figure A-1.
A.3.2.4 Assembly related information. The assembly related information shall be as specified in A.1.2.4.4 and on figure A-1.
A.3.2.5 Radiation exposure circuit. The radiation exposure circuit shall be as defined in paragraph 3.2.4 herein.
A.3.3 Electrical performance characteristics and post-irradiation parameter limits. Unless otherwise specified herein, the
electrical performance characteristics and post-irradiation parameter limits are as specified in table I of the body of this
document.
A.3.4 Electrical test requirements. The wafer probe test requirements shall include functional and parametric testing
sufficient to make the packaged die capable of meeting the electrical performance requirements in table I.
A.3.5 Marking. As a minimum, each unique lot of die, loaded in single or multiple stack of carriers, for shipment to a
customer, shall be identified with the wafer lot number, the certification mark, the manufacturer’s identification and the PIN listed
in A.1.2 herein. The certification mark shall be a “QML” or “Q” as required by MIL-PRF-38535.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-98533
A
REVISION LEVEL
E
SHEET
16
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-98533
A.3.6 Certification of compliance. For device classes Q and V, a certificate of compliance shall be required from a
QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see A.6.4 herein). The certificate of
compliance submitted to DLA Land and Maritime -VA prior to listing as an approved source of supply for this appendix shall
affirm that the manufacturer’s product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and the
requirements herein.
A.3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535
shall be provided with each lot of microcircuit die delivered to this drawing.
A.4 VERIFICATION
A.4.1 Sampling and inspection. For device classes Q and V, die sampling and inspection procedures shall be in accordance
with MIL-PRF-38535 or as modified in the device manufacturer’s Quality Management (QM) plan. The modifications in the QM
plan shall not affect the form, fit, or function as described herein.
A.4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and as defined in the
manufacturer’s QM plan. As a minimum, it shall consist of:
a.
Wafer lot acceptance for class V product using the criteria defined in MIL-STD-883, method 5007.
b.
100% wafer probe (see paragraph A.3.4 herein).
c.
100% internal visual inspection to the applicable class Q or V criteria defined in MIL-STD-883, method 2010 or the
alternate procedures allowed in MIL-STD-883, method 5004.
A.4.3 Conformance inspection.
A.4.3.1 Group E inspection. Group E inspection is required only for parts intended to be identified as radiation assured (see
A.3.5 herein). RHA levels for device classes Q and V shall be as specified in MIL-PRF-38535. End point electrical testing of
packaged die shall be as specified in table IIA herein. Group E tests and conditions are as specified in paragraphs 4.4.4 and
4.4.4.1 herein.
A.5 DIE CARRIER
A.5.1 Die carrier requirements. The requirements for the die carrier shall be accordance with the manufacturer’s QM plan or
as specified in the purchase order by the acquiring activity. The die carrier shall provide adequate physical, mechanical and
electrostatic protection.
A.6 NOTES
A.6.1 Intended use. Microcircuit die conforming to this drawing are intended for use in microcircuits built in accordance with
MIL-PRF-38535 or MIL-PRF-38534 for government microcircuit applications (original equipment), design applications, and
logistics purposes.
A.6.2 Comments. Comments on this appendix should be directed to DLA Land and Maritime -VA, Columbus, Ohio,
43218-3990 or telephone (614)-692-0540.
A.6.3 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein are defined in
MIL-PRF-38535 and MIL-HDBK-1331.
A.6.4 Sources of supply for device classes Q and V. Sources of supply for device classes Q and V are listed in QML-38535.
The vendors listed within MIL-HDBK-103 and QML-38535 have submitted a certificate of compliance (see A.3.6 herein) to
DLA Land and Maritime -VA and have agreed to this drawing.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-98533
A
REVISION LEVEL
E
SHEET
17
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-98533
NOTE: Pad numbers reflect terminal numbers when placed in case outline X (see Figure 1).
FIGURE A-1. Die bonding pad locations and electrical functions.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-98533
A
REVISION LEVEL
E
SHEET
18
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-98533
Die physical dimensions.
Die size: 2420 µm x 2530 µm
Die thickness: 483 µm ± 25.4 µm
Interface materials.
Top metallization: AlCu
Thickness: 16.0 kÅ ± 2 kÅ
Backside metallization: None.
Glassivation.
Type: Nitride over Silox (SiO2, 5% Phos)
Thickness: Silox: 12 kÅ ± 2.0 kÅ
Nitride: 3.5 kÅ ± 1.5 kÅ
Substrate: Dielectric Isolation (DI) Silicon
Assembly related information.
Substrate potential: Unbiased
Special assembly instructions: None
FIGURE A-1. Die bonding pad locations and electrical functions - continued.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-98533
A
REVISION LEVEL
E
SHEET
19
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-98533
NOTE: Pad numbers reflect terminal numbers when placed in case outline X (see Figure 1).
FIGURE A-2. Die bonding pad locations and electrical functions.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-98533
A
REVISION LEVEL
E
SHEET
20
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-98533
Die physical dimensions.
Die size: 2420 microns x 2530 microns
Die thickness: 483 µm ± 25.4 µm
Interface materials.
Top metallization: Al/Cu 16.0 kÅ ±2 kÅ
Backside metallization: None
Glassivation.
Type: Silox (Si02) 1:6:1
Thickness: 8 kÅ ± 0.8 kÅ (1 kÅ undopped, 6 kÅ dopped, cap 1 kÅ undopped)
Substrate: Dielectrically Isolated (DI)
Assembly related information.
Substrate potential: Unbiased
Special assembly instructions: None
FIGURE A-2. Die bonding pad locations and electrical functions - continued.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-98533
A
REVISION LEVEL
E
SHEET
21
STANDARD MICROCIRCUIT DRAWING BULLETIN
DATE: 13-07-30
Approved sources of supply for SMD 5962-98533 are listed below for immediate acquisition information only and
shall be added to MIL-HDBK-103 and QML-38535 during the next revision. MIL-HDBK-103 and QML-38535 will be
revised to include the addition or deletion of sources. The vendors listed below have agreed to this drawing and a
certificate of compliance has been submitted to and accepted by DLA Land and Maritime -VA. This information
bulletin is superseded by the next dated revision of MIL-HDBK-103 and QML-38535. DLA Land and Maritime
maintains an online database of all current sources of supply at http://www.landandmaritime.dla.mil/Programs/Smcr/.
Standard
microcircuit drawing
PIN 1/
Vendor
CAGE
number
Vendor
similar
PIN 2/
5962R9853301QXC
34371
HS9-OP470ARH-8
5962R9853301VXC
34371
HS9-OP470ARH-Q
5962R9853301V9A
34371
HS0-OP470ARH-Q
5962R9853302VXC
34371
HS9-OP470AEH-Q
5962R9853302V9A
34371
HS0-OP470AEH-Q
1/ The lead finish shown for each PIN representing
a hermetic package is the most readily available
from the manufacturer listed for that part. If the
desired lead finish is not listed contact the vendor
to determine its availability.
2/ Caution. Do not use this number for item
acquisition. Items acquired to this number may not
satisfy the performance requirements of this drawing.
Vendor CAGE
number
34371
Vendor name
and address
Intersil Corporation
1001 Murphy Ranch Road
Milpitas, CA 95035-6803
The information contained herein is disseminated for convenience only and the
Government assumes no liability whatsoever for any inaccuracies in the
information bulletin.