Zowie Technology Corporation General Purpose Transistor NPN Silicon Halogen-free type Lead free product COLLECTOR 3 3 BASE 1 1 MMBT3904GH 2 2 EMITTER SOT-23 MAXIMUM RATINGS Symbol Value Unit Collector-Emitter Voltage VCEO 40 Vdc Collector-Base Voltage VCBO 60 Vdc Emitter-Base Voltage VEBO 6.0 Vdc IC 200 mAdc Symbol Max. Unit PD 225 1.8 mW mW / oC R JA 556 PD 300 2.4 R JA TJ,TSTG 417 -55 to +150 Rating Collector Current-Continuous THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board o Derate above 25 C (1) o TA=25 C Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate, o Derate above 25 C (2) o TA=25 C Thermal Resistance Junction to Ambient Junction and Storage Temperature o C/W mW mW / oC o C/W o C o ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) Symbol Min. Max. Unit V(BR)CEO 40 - Vdc Collector-Base Breakdowe Voltage ( IC=10 uAdc, IE=0 ) V(BR)CBO 60 - Vdc Emitter-Base Breakdowe Voltage ( IE=10 uAdc, IC=0 ) V(BR)EBO 6.0 - Vdc Base Cutoff Current ( VCE=30 Vdc, VEB=3.0 Vdc ) IBL - 50 nAdc Collector Cutoff Current ( VCE=30 Vdc, VEB=3.0 Vdc ) ICEX - 50 nAdc Characteristic OFF CHARACTERISTICS Collector-Emitter Breakdowe Voltage ( IC=1.0mAdc, IB=0 ) REV. 0 (3) Zowie Technology Corporation Zowie Technology Corporation MMBT3904GH o ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Continued) Min. Max. 40 70 100 60 30 300 - VCE(sat) - 0.2 0.3 Vdc VBE(sat) 0.65 - 0.85 0.95 Vdc fT 300 - MHZ Output Capacitance ( VCB=5.0 Vdc, IE=0, f=1.0 MHZ ) Cobo - 4.0 pF Input Capacitance ( VEB=0.5 Vdc, IC=0, f=1.0 MHZ ) Cibo - 8.0 pF Input Impedance ( VCE=10 Vdc, IC=1.0 mAdc, f=1.0 kHZ ) hie 1.0 10 k ohms Voltage Feedback Ratio ( VCE=10 Vdc, IC=1.0 mAdc, f=1.0 kHZ ) hre 0.5 8.0 X 10 Small-Signal Current Gain ( VCE=10 Vdc, IC=1.0 mAdc, f=1.0 kHZ ) hfe 100 400 - Output Admittance ( VCE=10 Vdc, IC=1.0 mAdc, f=1.0 kHZ ) hoe 1.0 40 u mhos Noise Figure ( VCE=5.0 Vdc, IC=100 uAdc, RS=1.0 k ohm, f=1.0 kHZ ) NF - 5.0 dB ( VCC=3.0 Vdc, VBE=-0.5 Vdc, IC=10 mAdc, IB1=1.0 mAdc ) td - 35 tr - 35 ( VCC=3.0 Vdc, IC=10 mAdc, IB1=IB2=1.0 mAdc ) ts - 200 tf - 50 Symbol Characteristic ON CHARACTERISTICS Unit (3) DC Current Gain ( IC=0.1 mAdc, VCE=1.0 Vdc ) ( IC=1.0 mAdc, VCE=1.0 Vdc ) ( IC=10 mAdc, VCE=1.0 Vdc ) ( IC=50 mAdc, VCE=1.0 Vdc ) ( IC=100 mAdc, VCE=1.0 Vdc ) Collector-Emitter Saturation Voltage ( IC=10 mAdc, IB=1.0 mAdc ) ( IC=50 mAdc, IB=5.0 mAdc ) HFE - (3) (3) Base-Emitter Saturation Voltage ( IC=10 mAdc, IB=1.0 mAdc ) ( IC=50 mAdc, IB=5.0 mAdc ) SMALL-SIGNAL CHARACTERISTIC Current-Gain-Bandwidth Product ( IC=10 mAdc, VCE=20 Vdc, f=100 MHZ ) -4 SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time (1) FR-5=1.0 x 0.75 x 0.062in. (2) Alumina=0.4 x 0.3 x 0.024in. 99.5% alumina. (3) Pulse Test : Pulse Width 300uS, Duty Cycle REV. 0 nS nS 2.0%. Zowie Technology Corporation Zowie Technology Corporation MMBT3904GH +3V +3 V DUTY CYCLE = 2% 300 ns t1 10 < t1< 500us +10.9 V 275 +10.9 V DUTY CYCLE = 2% 275 10 k 10 k 0 ± 0.5 V CS < 4 pF* < 1 ns CS < 4 pF* 1N916 - 9.1 V < 1 ns * Total shunt capacitance of test jig and connectors Figure 1. Delay and Rise Time Equivalent Test Circuit Figure 2. Storage and Fall Time Equivalent Test Circuit TYPICAL TRANSIENT CHARACTERISTICS 10 5000 o TJ=25 C 2000 Q, CHARGE (pC) CAPACITANCE ( pF ) VCC=40 V IC/IB=10 3000 7.0 5.0 Cibo 3.0 Cobo 2.0 o TJ=125 C 1000 700 500 QT 300 200 QA 100 70 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 50 20 30 40 1.0 2.0 3.0 Figure 3. Capacitance 20 30 50 70 100 200 Figure 4. Charge Data 500 500 300 300 IC/IB=10 200 tr, RISE TIME ( ns ) 200 100 TIME (ns) 5.0 7.0 10 IC, COLLECTOR CURRENT ( mA ) REVERSE BIAS VOLTAGE ( VOLTS ) 70 tr @ VCC=3.0 V 50 30 20 40 V 100 70 50 30 20 15 V 10 10 7 7 2.0 V td @ VOB=0 V 5 5 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT ( mA ) Figure 5. Turn-On Time REV. 0 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT ( mA ) Figure 6. Rise Time Zowie Technology Corporation Zowie Technology Corporation MMBT3904GH 500 200 IC/IB=20 VCC=40 V IB1=IB2 300 IC/IB=10 t'S = tS - 1/8tf IB1/IB2 tf, FALL TIME ( ns ) t's, STORAGE TIME ( ns ) 300 500 100 70 50 IC/IB=20 IC/IB=10 30 20 200 IC/IB=20 100 70 50 30 20 10 10 7 7 5 IC/IB=10 5 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 1.0 2.0 3.0 IC, COLLECTOR CURRENT ( mA ) Figure 7. Storage Time NF, NOISE FIGURE ( bB ) NF, NOISE FIGURE ( bB ) 10 SOURCE RESISTANCE=200 IC=0.5 mA 8 SOURCE RESISTANCE=1.0 K IC=50uA 6 4 50 70 100 200 IC =1.0 mA f = 1.0 KHZ 12 IC =0.5 mA 10 IC =100 uA IC =50 uA 8 6 4 SOURCE RESISTANCE=500 IC=100uA 2 0 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100 0.1 f, FREQUENCY (kHz) 0.2 0.4 1.0 2.0 4.0 10 40 20 100 RS, SOURCE RESISTANCE ( k OHMS ) Figure 9. Figure 10. 100 hoe, OUTPUTADMITTANCE (umhos) 300 hfe, CURRENT GAIN 30 14 SOURCE RESISTANCE=200 IC=1.0 mA 0 200 100 70 50 50 20 10 5 2 1 30 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT ( mA ) Figure 11. Current Gain REV. 0 20 Figure 8. Fall Time 12 2 5.0 7.0 10 IC, COLLECTOR CURRENT ( mA ) 5.0 10 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 IC, COLLECTOR CURRENT ( mA ) Figure 12. Output Admittance Zowie Technology Corporation Zowie Technology Corporation hre, VOLTAGE FEEDBACK RATIO(X 10-4) hie, INPUT IMPEDANCE (k OHMS) 20 10 5.0 2.0 1.0 0.5 0.2 0.1 0.2 0.3 0.5 1.0 5.0 2.0 3.0 10 MMBT3904GH 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 IC, COLLECTOR CURRENT ( mA ) IC, COLLECTOR CURRENT ( mA ) Figure 13. Input Impedance Figure 14. Voltage Feedback Ratio 10 hFE, DC CURRENT GAIN (NORMALIZED) TYPICAL STATIC CHARACTERISTICS 2.0 o TJ = +125 C VCE=1.0V o TJ = +25 C 1.0 0.7 o TJ = -55 C 0.5 0.3 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT ( mA ) VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) Figure 15. DC Current Gain 1.0 o TJ = 25 C 0.8 10 mA IC = 1.0 mA 30 mA 100 mA 0.6 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IB, BASE CURRENT ( mA ) Figure 16. Collector Saturation Region REV. 0 Zowie Technology Corporation 1.0 1.0 0.5 o VBE @ ICE=1.0 V 0.6 0.4 VCE(sat) @ IC/IB=10 o +25 C to +125 C VC o VBE(sat) @ IC/IB=10 0.8 FOR VCE(sat) 0 o o o o -55 C to +25 C -0.5 -55 C to +25 C -1.0 o o +25 C to +125 C VB FOR VBE(sat) -1.5 0.2 0 -2.0 1.0 2.0 5.0 10 20 50 IC, COLLECTOR CURRENT ( mA ) Figure 17. " ON " Voltage REV. 0 MMBT3904GH 1.2 COEFFICIENT ( mV / C ) V, VOLTAGE ( VOLTS ) Zowie Technology Corporation 100 200 0 20 40 60 80 100 120 140 160 180 200 IC, COLLECTOR CURRENT ( mA ) Figure 18. Temperature Coefficients Zowie Technology Corporation Marking Description Month Code 1AM Pb Free M Series code Wafer Source Code Month Code : ODD YEARS (2009/1/3) Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 1 2 3 4 5 6 7 8 9 T V C EVEN YEARS (2010/1/3) Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec E F H J K L N P U X Y Z