MMBT4401GH

Zowie Technology Corporation
Switching Transistor
NPN Silicon
Lead free product
Halogen-free type
COLLECTOR
3
MMBT4401GH
3
BASE
1
1
2
2
EMITTER
SOT-23
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
40
Vdc
Collector-Base Voltage
VCBO
60
Vdc
Emitter-Base Voltage
VEBO
6.0
Vdc
IC
600
mAdc
Symbol
Max.
Unit
PD
225
1.8
mW
mW / oC
R JA
556
PD
300
2.4
R JA
TJ,TSTG
417
-55 to +150
Rating
Collector Current-Continuous
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board
o
Derate above 25 C
(1)
o
TA=25 C
Thermal Resistance Junction to Ambient
Total Device Dissipation Alumina Substrate,
o
Derate above 25 C
(2)
o
TA=25 C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
o
C/W
mW
mW / oC
o
C/W
o
C
o
ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted)
Symbol
Min.
Max.
Unit
V(BR)CEO
40
-
Vdc
Collector-Base Breakdowe Voltage
( IC=0.1 mAdc, IE=0 )
V(BR)CBO
60
-
Vdc
Emitter-Base Breakdowe Voltage
( IE=0.1 mAdc, IC=0 )
V(BR)EBO
6.0
-
Vdc
Base Cutoff Current
( VCE=35 Vdc, VEB=0.4 Vdc )
IBEV
-
0.1
uAdc
Collector Cutoff Current
( VCE=35 Vdc, VEB=0.4 Vdc )
ICEX
-
0.1
uAdc
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdowe Voltage
( IC=1.0mAdc, IB=0 )
09/2001
(3)
Zowie Technology Corporation
Zowie Technology Corporation
o
ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Continued)
Min.
Max.
20
40
80
100
40
300
-
VCE(sat)
-
0.4
0.75
Vdc
VBE(sat)
0.75
-
0.95
1.2
Vdc
fT
250
-
MHZ
Collector-Base Capacitance
( VCB=5.0 Vdc, IE=0, f=1.0 MHZ )
Ccb
-
6.5
pF
Emitter-Base Capacitance
( VEB=0.5 Vdc, IC=0, f=1.0 MHZ )
Ceb
-
30
pF
Input Impedance
( VCE=10 Vdc, IC=1.0 mAdc, f=1.0 kHZ )
hie
1.0
15
k ohms
Voltage Feedback Ratio
( VCE=10 Vdc, IC=1.0 mAdc, f=1.0 kHZ )
hre
0.1
8.0
X 10
Small-Signal Current Gain
( VCE=10 Vdc, IC=1.0 mAdc, f=1.0 kHZ )
hfe
40
500
-
Output Admittance
( VCE=10 Vdc, IC=1.0 mAdc, f=1.0 kHZ )
hoe
1.0
30
u mhos
( VCC=30 Vdc, VBE=2.0 Vdc,
IC=150 mAdc, IB1=15 mAdc )
td
-
15
tr
-
20
( VCC=30 Vdc,
IC=150 mAdc, IB1=IB2=15 mAdc )
ts
-
225
tf
-
30
Symbol
Characteristic
ON CHARACTERISTICS
Unit
(3)
DC Current Gain
( IC=0.1 mAdc, VCE=1.0 Vdc )
( IC=1.0 mAdc, VCE=1.0 Vdc )
( IC=10 mAdc, VCE=1.0 Vdc )
( IC=150 mAdc, VCE=1.0 Vdc )
( IC=500 mAdc, VCE=2.0 Vdc )
Collector-Emitter Saturation Voltage
( IC=150 mAdc, IB=15 mAdc )
( IC=500 mAdc, IB=50 mAdc )
HFE
-
(3)
(3)
Base-Emitter Saturation Voltage
( IC=150 mAdc, IB=15 mAdc )
( IC=500 mAdc, IB=50 mAdc )
SMALL-SIGNAL CHARACTERISTIC
Current-Gain-Bandwidth Product
( IC=20 mAdc, VCE=10 Vdc, f=100 MHZ )
-4
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
(1) FR-5=1.0 x 0.75 x 0.062in.
(2) Alumina=0.4 x 0.3 x 0.024in. 99.5% alumina.
(3) Pulse Test : Pulse Width 300uS, Duty Cycle
09/2001
nS
nS
2.0%.
Zowie Technology Corporation
Zowie Technology Corporation
MMBT4401GH
SWITCHING TIME EQUIVALENT TEST CIRCUITS
+30 V
1.0 to 100 us,
DUTY CYCLE = 2%
+16 V
+30 V
1.0 to 100 us,
DUTY CYCLE = 2%
200
+16 V
200
1.0 k
1.0 k
0
-2.0 V
0
CS* < 10 pF*
CS* < 10 pF*
-14 V
< 20 ns
< 2.0 ns
-4.0V
Scope rise time < 4.0 ns
* Total shunt capacitance of test jig and connectors
Figure 1. Turn-On Time
Figure 2. Turn-Off Time
TRANSIENT CHARACTERISTICS
10
30
7.0
5.0
Q, CHARGE (pC)
CAPACITANCE ( pF )
20
Cobo
10
7.0
5.0
2.0
0.2 0.3
0.5
1.0
2.0 3.0
QT
1.0
0.7
0.3
0.2
3.0
5.0
10
REVERSE BIAS VOLTAGE ( VOLTS )
Figure 3. Capacitance
09/2001
3.0
2.0
0.5
Ccb
0.1
VCC=30 V
IC/IB=10
20 30 50
0.1
10
o
TJ=25 C
QA
o
TJ=100 C
20
30
50
70
100
200
300
500
IC, COLLECTOR CURRENT ( mA )
Figure 4. Charge Data
Zowie Technology Corporation
Zowie Technology Corporation
MMBT4401GH
TRANSIENT CHARACTERISTICS
100
100
70
70
IC/IB=10
50
tr @ VCC=30V
tr @ VCC=10V
tb @ VEB=2.0V
td @ VEB=0V
30
20
t, TIME ( ns )
t, TIME ( ns )
50
tr
30
20
10
10
7.0
7.0
5.0
5.0
10
20
30
50
70
100
200
300
500
10
20
30
IC, COLLECTOR CURRENT ( mA )
50
70
100
200
300
500
IC, COLLECTOR CURRENT ( mA )
F igure 6. R is e and F all T imes
Figure 5. Turn-On Time
300
100
VCC=30 V
IB1=IB2
70
tS4 = tS - 1/8tf
IB1 = IB2
IC/IB = 10 to 20
200
tf, FALL TIME ( ns )
t's, STORAGE TIME ( ns )
VCC=30 V
IC/IB=10
tr
100
70
50
IC/IB=20
30
IC/IB=10
20
10
50
7.0
5.0
30
10
20
30
50
70
100
200
300
500
10
20
30
IC, COLLECTOR CURRENT ( mA )
50
70
100
200
300
500
IC, COLLECTOR CURRENT ( mA )
Figure 7. Storage Time
Figure 8. Fall Time
SMALL-SIGNAL CHARACTERISTICS
NOISE FIGURE
o
VCE=10 Vdc, TA=25 C
Bandwidth=1.0HZ
8.0
10
IC=1.0mA, RS=150
IC=500uA, RS=200
IC=100uA, RS=2.0k
IC=50uA, RS=4.0k
RS=OPTIMUM
SOURCE
RESISTANCE
NF, NOISE FIGURE ( bB )
NF, NOISE FIGURE ( bB )
10
6.0
4.0
2.0
IC=50uA
6.0
IC=100uA
IC=500uA
IC=1.0mA
4.0
2.0
0
0.01 0.02 0.05 0.1 0.2
0
0.5 1.0 2.0 5.0
10
f, FREQUENCY (kHz)
Figure 9.Frquency Effects
09/2001
f = 1.0 kHz
8.0
20
50
100
50
100 200
500 1.0k 2.0k
5.0k 10k
20k
50k 100k
RS, SOURCE RESISTANCE ( OHMS )
Figure 10.Source Resistance Effects
Zowie Technology Corporation
Zowie Technology Corporation
MMBT4401GH
h PARAMETERS
o
VCE = 10 Vdc, f = 1.0 kHZ, TA = 25 C
This group of graphs illustrates the relationship between
hfe and and other " h " parameters for this series of transistors.
To obtain these curves, a high-gain and a low-gain unit were
selected from the MMBT4401LT1 lines, and the same units
were used to develop the correspondingly numbered curves
on each graph.
50k
hfe, CURRENT GAIN
200
MMBT4401LT1 UNIT 1
MMBT4401LT1 UNIT 2
100
70
50
30
hie, INPUT IMPEDANCE (OHMS)
300
20
MMBT4401LT1 UNIT 1
MMBT4401LT1 UNIT 2
20k
10k
5.0k
2.0k
1.0k
500
0.1
0.2
0.3
0.5 0.7 1.0
2.0
3.0
5.0 7.0 10
0.1
0.2
IC, COLLECTOR CURRENT ( mA )
1.0
2.0
3.0
5.0 7.0 10
F igure 12. Input Impedanc e
10
100
hoe, OUTPUT ADMITTANCE(umhos)
-4
hre, VOLTAGE FEEDBACK RATIO (X 10 )
0.5 0.7
IC, COLLECTOR CURRENT ( mA )
Figure 11. Current Gain
7.0
5.0
3.0
2.0
MMBT4401LT1 UNIT 1
MMBT4401LT1 UNIT 2
1.0
0.7
0.5
0.3
0.2
50
MMBT4401LT1 UNIT 1
20
MMBT4401LT1 UNIT 2
10
5.0
2.0
1.0
0.1
09/2001
0.3
0.2
0.3
0.5 0.7
1.0
2.0
3.0
5.0 7.0 10
0.1
0.2
0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT ( mA )
IC, COLLECTOR CURRENT ( mA )
Figure 13. Voltage Feedback Ratio
Figure 14. Output Admittance
5.0 7.0 10
Zowie Technology Corporation
Zowie Technology Corporation
MMBT4401GH
STATIC CHARACTERISTICS
hFE, NORMALIZED CURRENT GAIN
3.0
VCE=1.0V
2.0
VCE=10V
o
TJ=125 C
1.0
o
TJ=25 C
0.7
o
TJ= -55 C
0.5
0.3
0.2
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
100
200
300
500
IC, COLLECTOR CURRENT ( mA )
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 15. DC Current Gain
1.0
o
TJ= 25 C
0.8
IC = 1.0mA
IC = 10mA
IC = 100mA
IC = 500mA
0.6
0.4
0.2
0
0.01
0.02 0.03
0.05 0.07 0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0 7.0
10
20
30
50
100 200
500
IB, BASE CURRENT ( mA )
Figure 16. Collector Saturation Region
1.0
+0.5
o
TJ= 25 C
VBE(SAT) @ IC/IB = 10
0
VC
for VCE(sat)
VOLTAGE ( VOLTS )
o
COEFFICIENTS (mV / C)
0.8
0.6
VBE @ VCE = 10 V
0.4
0.2
-1.0
-1.5
VB
-2.0
VCE(SAT) @ IC/IB = 10
0
for VBE
-2.5
0.1 0.2
0.5
1.0 2.0
5.0
10
20
50
100 200
IC, COLLECTOR CURRENT ( mA )
Figure 17. " ON " Voltage
09/2001
-0.5
500
0.1 0.2
0.5
1.0 2.0
5.0
10
20
50
IC, COLLECTOR CURRENT ( mA )
Figure 18. Temperature Coefficients
Zowie Technology Corporation