TECHNICAL DATA NPN SILICON LOW POWER TRANSISTOR Qualified per MIL-PRF-19500/376 Devices Qualified Level 2N2484 JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = +250C (1) @ TC = +250C (2) Operating & Storage Junction Temperature Range Symbol 2N2484 Unit VCEO VCBO VEBO IC 60 60 6.0 50 360 1.2 -65 to +200 Vdc Vdc Vdc mAdc mW W 0 C PT TJ, Tstg THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case 1) Derate linearly 2.06 mW/0C above TA = +250C 2) Derate linearly 6.85 mW/0C above TC = +250C Symbol RθJC Max. 146 Unit C/W 0 TO- 18* (TO-206AA) *See appendix A for package outline ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted) Characteristics Symbol Min. V(BR)CEO 60 Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Current IC = 10 mAdc Collector-Emitter Cutoff Current VCE = 45 Vdc Collector-Base Cutoff Current VCB = 45 Vdc VCB = 60 Vdc Collector-Emitter Cutoff Current VCE = 5.0 Vdc Emitter-Base Cutoff Current VEB = 5.0 Vdc VEB = 6.0 Vdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 Vdc ICES 5.0 ηAdc ICBO 5.0 10 ηAdc µAdc ICEO 2.0 ηAdc IEBO 2.0 10 ηAdc µAdc 120101 Page 1 of 2 2N2484 JAN SERIES ELECTRICAL CHARACTERISTICS (con’t) Characteristics Symbol Min. Max. 45 200 225 250 250 225 500 675 800 800 800 Unit ON CHARACTERISTICS (3) Forward-Current Transfer Ratio IC = 1.0 µAdc, VCE = 5.0 Vdc IC = 10 µAdc, VCE = 5.0 Vdc IC = 100 µAdc, VCE = 5.0 Vdc IC = 500 µAdc, VCE = 5.0 Vdc IC = 1.0 mAdc, VCE = 5.0 Vdc IC = 10 mAdc, VCE = 5.0 Vdc Collector-Emitter Saturation Voltage IC = 1.0 mAdc, IB = 100 µAdc Base-Emitter Voltage VCE = 5.0 Vdc, IC = 100 µAdc hFE VCE(sat) 0.3 Vdc Vdc VBE 0.5 0.7 hfe 3.0 2.0 7.0 DYNAMIC CHARACTERISTICS Forward Current Transfer Ratio IC = 50 µAdc, VCE = 5.0 Vdc, f = 5.0 MHz IC = 500 µAdc, VCE = 5.0 Vdc, f = 30 MHz Open Circuit Output Admittance IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz Open Circuit Reverse-Voltage Transfer Ratio IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz Input Impedance IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz Small-Signal Short-Circuit Forward Current Transfer Ratio IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz Output Capacitance VCB = 5.0 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz Input Capacitance VEB = 0.5 Vdc, IC = 0, 100 kHz ≤ f ≤ 1.0 MHz (3) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%. 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 hoe 40 hre 8.0x10-4 hie 3.5 24 hfe 250 900 µmhos kΩ Cobo 5.0 pF Cibo 6.0 pF 120101 Page 2 of 2