Zowie Technology Corporation High Voltage Transistors Lead free product Halogen-free type FEATURE ƽ We declare that the material of product compliance with RoHS requirements. 3 COLLECTOR 3 MMBT5550GH MMBT5551GH 1 1 BASE 2 2 SOT-23 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO 140 Vdc Collector–Base Voltage V CBO 160 Vdc Emitter–Base Voltage V 6.0 Vdc 600 mAdc Collector Current — Continuous EBO IC THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol Max Unit PD 225 mW RθJA 1.8 556 mW/°C °C/W PD 300 mW RθJA TJ , Tstg 2.4 417 –55 to +150 mW/°C °C/W °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol Min Max Unit 140 160 — — Vdc MMBT5550GH 160 — Vdc MMBT5551GH 180 — 6.0 — OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage(3) (I C = 1.0 mAdc, I B = 0) V (BR)CEO MMBT5550GH MMBT5551GH V (BR)CBO Collector–Base Breakdown Voltage (I C = 100 µAdc, I E = 0) Emitter–Base Breakdown Voltage V (I E = 10 µAdc, I C = 0) Collector Cutoff Current ( V CB = 100Vdc, I E = 0) ( V CB = 120Vdc, I E = 0) ( V CB = 100Vdc, I E = 0, T A=100 °C) ( V CB = 120Vdc, I E = 0, T A=100 °C) I CBO Vdc — 100 nAdc MMBT5550GH — — 50 100 µAdc MMBT5551GH — 50 — 50 MMBT5550GH MMBT5551GH Emitter Cutoff Current ( V BE = 4.0Vdc, I C= 0) 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 3. Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2.0%. REV. 0 (BR)EBO I EBO nAdc Zowie Technology Corporation Zowie Technology Corporation ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max 60 80 60 80 20 30 — — 250 250 — — Unit ON CHARACTERISTICS DC Current Gain (I C = 1.0 mAdc, V CE = 5.0 Vdc) (I C = 10 mAdc, V CE = 5.0 Vdc) MMBT5550GH MMBT5551GH MMBT5550GH MMBT5551GH (I C = 50 mAdc, V CE = 5.0Vdc) Collector–Emitter Saturation Voltage (I C = 10 mAdc, I B = 1.0 mAdc) (I C = 50 mAdc, I B = 5.0 mAdc ) Base–Emitter Saturation Voltage (I C = 10 mAdc, I B = 1.0 mAdc) (I C = 50 mAdc, I B = 5.0 mAdc) REV. 0 hFE MMBT5550GH MMBT5551GH –– VCE(sat) Vdc Both Types — 0.15 MMBT5550GH MMBT5551GH — — 0.25 0.20 Both Types — 1.0 MMBT5550GH MMBT5551GH — 1.2 — 1.0 V Vdc BE(sat) Zowie Technology Corporation Zowie Technology Corporation h FE, DC CURRENT GAIN (NORMALIZED) MMBT5550GH MMBT5551GH 500 300 V CE = 1.0 V T J = +125°C 200 V CE = 5.0 V +25°C 100 –55°C 50 30 20 10 7.0 5.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 V CE, COLLECTOR EMITTER VOLTAGE (VOLTS) I C , COLLECTOR CURRENT (mA) Figure 15. DC Current Gain 1.0 T J = 25°C 0.8 I C = 1.0 mA 10 mA 0.6 30 mA 100 mA 0.4 0.2 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 I B , BASE CURRENT (mA) Figure 16. Collector Saturation Region 10 1 1.0 T J = 25°C V CE = 30 V 0.8 10 –1 T J = 125°C I C= I 10 –2 10 –3 CES 75°C REVERSE FORWARD 25°C 10 –4 V BE(sat) @ I C /I B = 10 0.6 0.4 0.2 V CE(sat) @ I C /I B = 10 10 –5 0 –0.4 –0.3 REV. 0 V, VOLTAGE (VOLTS) I C, COLLECTOR CURRENT (µA) 10 0 –0.2 –0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 V BE , BASE–EMITTER VOLTAGE (VOLTS) I C , COLLECTOR CURRENT (mA) Figure 3. Collector Cut–Off Region Figure 4. “On” Voltages 100 Zowie Technology Corporation Zowie Technology Corporation 2.5 T J = –55°C to +135°C 2 1.5 1.0 10.2 V V BB θ VC for V CE(sat) 0.5 V in 100 0 –0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 V in t r , t f <10 ns DUTY CYCLE = 1.0% –2.0 0.5 V out 5.1 k –1.5 0.2 0.3 RC INPUT PULSE θ VB for V BE(sat) –2.5 0.1 3.0 k 30 V RB 0.25 mF 10 ms –1.0 V CC –8.8 V 1N914 100 θ V , TEMPERATURE COEFFICIENT (mV/°C) MMBT5550GH MMBT5551GH Values Shown are for I C @ 10 mA I C , COLLECTOR CURRENT (mA) Figure 6. Switching Time Test Circuit Figure 5. Temperature Coefficients 100 1000 70 50 I C /I B = 10 T J = 25°C T J = 25°C 30 300 20 200 10 7.0 t, TIME (ns) C, CAPACITANCE (pF) 500 C ibo 5.0 C obo 3.0 t r @ V CC = 30 V 100 2.0 1.0 0.2 t r @ V CC = 120 V 50 t d @ V EB(off) = 1.0 V 30 V CC = 120 V 20 10 0.3 0.7 0.5 1.0 2.0 3.0 5.0 7.0 10 0.2 0.3 0.5 20 1.0 2.0 3.0 5.0 10 20 30 50 V R , REVERSE VOLTAGE (VOLTS) I C , COLLECTOR CURRENT (mA) Figure 7. Capacitances Figure 8. Turn–On Time 100 200 5000 I C /I B = 10 T J = 25°C t f @ V CC = 120 V 3000 2000 t f @ V CC = 30 V t, TIME (ns) 1000 500 300 t s @ V CC = 120 V 200 100 50 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 I C , COLLECTOR CURRENT (mA) Figure 9. Turn–Off Time REV. 0 Zowie Technology Corporation