Zowie Technology Corporation High Voltage Transistor Lead free product Halogen-free type FEATURE MMBT5401GH ƽ We declare that the material of product compliance with RoHS requirements. 3 1 2 SOT-23 MAXIMUM RATINGS Rating Symbol Value Unit V CBO V EBO – 150 – 160 – 5.0 Vdc Vdc Vdc IC – 500 mAdc Collector–Emitter Voltage V Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous CEO 3 COLLECTOR 1 BASE THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR- 5 Board (1) T A =25 °C Derate above 25°C PD 225 mW 1.8 mW/°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) T A = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Operating Junction and Storage Temperature R 556 °C/W PD 300 mW R θJA T J, Tstg 2.4 417 –55 to +150 mW/°C °C/W °C θJA 2 EMITTER ELECTRICAL CHARACTERISTICS (T A = 25°C unles s otherwise noted) Characteristic Symbol Min Ma x Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (I C = –1.0 mAdc, I B = 0) Collector–Base Breakdown Voltage (I C = –100 µAdc, I E = 0) Emitter-BAse Breakdown Voltage (I E= –10µAdc,I C=0) Collector Cutoff Current (V CB = –120 Vdc, IE= 0) (V CB = –120 Vdc, IE= 0, T A=100 °C) V (BR)CEO Vdc – 150 — – 160 — -5.0 — V (BR)CBO Vdc V(BR)EBO Vdc I CES — – 50 nAdc — – 50 µAdc 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. REV. 1 Zowie Technology Corporation Zowie Technology Corporation MMBT5401GH ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued) Min Max 50 60 50 –– 240 –– –– –– – 0.2 – 0.5 (IC = –10 mAdc, I B = –1.0 mAdc) –– – 1.0 (IC = –50 mAdc, I B = –5.0 mAdc) –– – 1.0 100 300 –– 6.0 40 200 –– 8.0 Characteristic Symbol Unit ON CHARACTERISTICS (2) DC Current Gain (IC = –1.0mAdc, V CE = –5.0 Vdc) (IC = –10 mAdc, V CE = –5.0 Vdc) (IC = –50 mAdc, V CE = –5.0 Vdc) Collector–Emitter Saturation Voltage (IC = –10 mAdc, IB = –1.0 mAdc) (IC = –50 mAdc, I B = –5.0 mAdc) Base–Emitter Saturation Voltage hFE –– VCE(sat) Vdc VBE(sat) Vdc SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product (IC = –10 mAdc, V CE= –10 Vdc, f = 100 MHz) Output Capacitance (VCB= –10 Vdc, I E = 0, f = 1.0 MHz) Small–Signal Current Gain (IC= –1.0mAdc, VCE = –10Vdc, f = 1.0 kHz) Noise Figure (IC = –200 µAdc, VCE= –5.0 Vdc,Rs=10Ω, f = 1.0 kHz) REV. 1 f MHz T C obo pF h fe — NF dB Zowie Technology Corporation Zowie Technology Corporation MMBT5401GH Figure 1. DC Current Gain 200 150 h FE, CURRENT GAIN T J=125°C 100 25°C 70 50 –55°C V V 30 20 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 CE CE 20 = –1.0 V = –5.0 V 30 50 100 V CE , COLLECTOR– EMITTER VOLTAGE (VOLTS) I C , COLLECTOR CURRENT (mA) Figure 2. Collector Saturation Region 1.0 0.9 0.8 0.7 0.6 I 0.5 C =1.0mA 100 mA 30 mA 10mA 0.4 0.3 0.2 0.1 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 I B , BASE CURRENT (mA) Figure 3. Collector Cut–Off Region I C , COLLECTOR CURRENT (µA) 10 3 10 2 10 1 V CE = 30 V I C= I CES T J = 125°C 10 0 75°C 10 -1 10 -2 REVERSE 25°C 10 -3 - 0.3 - 0.2 - 0.1 FORWARD 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 V BE , BASE–EMITTER VOLTAGE (VOLTS) REV. 1 Zowie Technology Corporation Zowie Technology Corporation MMBT5401GH T J =25°C 0.9 V, VOLTAGE (VOLTS) θ V, TEMPERATURE COEFFICIENT (mV/° C) Figure 4. “On” Voltages 1.0 0.8 0.7 V 0.6 BE(sat) @ I C /I B =10 0.5 0.4 0.3 0.2 V CE(sat) @I C /I B =10 0.1 0 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 Figure 5. Temperature Coefficients 2.5 T J = –55°C to 135°C 2.0 1.5 1.0 0.5 θ 0 VC - 1.0 - 1.5 θ VB for V - 2.0 - 2.5 0.1 0.2 0.3 0.5 3.0 k in 10µs INPUT PULSE t r , t f < 10 ns DUTY CYCLE = 1.0% 0.25µF V R R C V B 5.1 k 100 in Values Shown are for I 1N914 C 2.0 3.0 5.0 10 20 30 50 100 Figure 7. Capacitances –30 V 100 1.0 100 CC @ 10 mA out T J =25°C 70 50 C, CAPACITANCE (pF) V V +8.8 V 10.2V BE(sat) I C , COLLECTOR CURRENT (mA) Figure 6. Switching Time Test Circuit BB CE(sat) - 0.5 I C , COLLECTOR CURRENT (mA) V for V 30 C 20 ibo 10 7.0 C 5.0 obo 3.0 2.0 1.0 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 V R , REVERSE VOLTAGE (VOLTS) Figure 9. Turn–Off Time Figure 8. Turn–On Time 1000 700 500 100 I C /I B =10 T J= 25°C t r @V t r @V 200 30 CC= 30V 100 70 50 30 10 20 1.0 2.0 3.0 5.0 10 20 30 50 I C , COLLECTOR CURRENT (mA) t f@ V 10 t f @VCC = 120V CC = 30V t s @V 7.0 = 120V CC 5.0 2.0 1.0 0.2 0.3 0.5 I C /I B= 10 T J= 25°C 3.0 t d @ V BE(off)= 1.0V V CC = 120V 20 REV. 1 70 50 = 120V t, TIME (ns) t, TIME (ns) 300 CC 100 200 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 I C , COLLECTOR CURRENT (mA) Zowie Technology Corporation Zowie Technology Corporation DEVICE MARKING AND ORDERING INFORMATION Device Marking Reel Reel (pcs) Carton (pcs) Packaging MMBT5401GH 2L 7" 3,000 60,000 120,000 SOT-23 PACKAGE DIMENSIONS Unit : mm 2.55 ± 0.45 0.35 ± 0.15 1.40 ± 0.25 SOT-23 3 1 2 0.14 ± 0.06 1.90 ± 0.15 2.90 ± 0.20 1.10 ± 0.25 0.10 Max. 0.40 ± 0.10 SOLDERING FOOTPRINT *Dimensions in inches and (millimeters) 0.031 (0.80) 0.037 (0.95) REV. 1 0.079 (2.00) 0.035 (0.90) SOT-23 0.037 (0.95) Zowie Technology Corporation Zowie Technology Corporation MARKING DIAGRAM SOT-23 DEV = Series Code M = Month Code Month Code Series code M DEV Pb Free Wafer Source Code Month Code : ODD YEARS (2013/1/3) Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec REV. 1 1 2 3 4 5 6 7 8 9 T V C EVEN YEARS (2014/1/3) Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec E F H J K L N P U X Y Z Zowie Technology Corporation