ISL70002SEH Neutron Test Report

Test Report 025
Neutron Testing of the ISL70002SEH Hardened Point of
Load Regulator
Introduction
This report summarizes results of 1MeV equivalent neutron
testing of the ISL70002SEH integrated FET point-of-load
regulator. The test was conducted in order to determine the
sensitivity of the part to Displacement Damage (‘DD’) caused
by neutron or proton environments. Neutron fluences ranged
from 2 x 1012 n/cm2 to 1 x 1014 n/cm2. This project was
carried out in collaboration with VPT, Inc. (Blacksburg, VA) and
their support is gratefully acknowledged.
Reference Documents
For more information about the ISL70002SEH, refer to the
following documentation.
• ISL70002SEH datasheet
• Standard Microcircuit Drawing (SMD): 5962-12202
• MIL-STD-883 test method 1017
Part Description
The ISL70002SEH is a total dose and single-event effects
hardened high efficiency monolithic synchronous buck
regulator with integrated (on-chip) switching MOSFETs. This
single chip power solution operates over an input voltage
range of 3V to 5.5V and provides a tightly regulated output
voltage that is externally adjustable from 0.8V to ~85% of the
input voltage. Output load current capacity is 12A for
TJ ≤ +150°C. Two ISL70002SEH devices configured to current
share can provide 19A total output current in what is
effectively a two-phase converter. The ISL70002SEH utilizes
peak current-mode control with integrated error amp
compensation and pin selectable slope compensation. The
switching frequency is pin selectable to either 500kHz or
1MHz.
operation one part is designated the master circuit and the
other the slave circuit and operation is controlled by the ISHSL
pin, which is connected to DGND for master operation and to
DVDD for slave operation. Refer also to the ISL70002SEH
datasheet for further diagrams and applications information.
In 2-phase operation, the two ISL70002SEH ICs run 180°
out-of-phase to minimize the input ripple current, effectively
operating as a single IC at twice the switching frequency. The
Master error amplifier and compensation network control the
overall two phase regulator. From a single-event effects testing
viewpoint, master and slave operation are functionally
different, requiring separate SET and SEFI testing for each of
the two conditions.
The ISL70002SEH is hardened to achieve a Total Dose (TID)
rating of 100krads(Si) at both high (50-300rad(Si)/s) and low
(< 0.01rad(Si)/s) dose rates as specified in MIL-STD-883 test
method 1019. The part is acceptance tested on a
wafer-by-wafer basis at low dose rate to 50krad(Si) and at high
dose rate to 100krad(Si).
The ISL70002SEH is also SEE tolerant to a Linear Energy
Transfer (LET) value of 86.4MeV•cm2/mg. Single-Event
Transients (SET) have evolved into a major issue in power
management parts driving voltage-sensitive loads. Additional
SET hardening is achieved by specifying or restricting the
values of certain external components.
The ISL70002SEH is implemented in a submicron BiCMOS
process optimized for power management applications. The
process is in volume production under MIL-PRF-38535
certification and is used for a wide range of commercial power
management devices.
Specifications for radiation hardened QML devices are
controlled by the Defense Logistics Agency (DLA) in Columbus,
OH. The SMD is the controlling document and must be cited
when ordering.
The part features a comparator type enable input that can be
used for simple digital on/off control or, alternately, can
provide undervoltage lockout capability by sensing the
magnitude of an external supply voltage using an external
voltage divider. A power-good signal indicates when the output
voltage is within ±11% (typical) of the nominal output voltage.
The regulator start-up is controlled by an analog soft-start
circuit externally adjustable from 2ms to 200ms. The
ISL70002SEH fault protection features include input
undervoltage, output undervoltage and output overcurrent.
The ISL70002SEH has the option to operate two parts
configured as a single two-phase regulator. This results in
nearly twice the load current capacity and provides a complete
power solution for large scale digital ICs, such as Field
Programmable Gate Arrays (FPGAs), most of which require
separate core and I/O voltages. In this mode, a redundant
current sharing bus balances the load current between the two
devices and communicates any fault conditions. In two-phase
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1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
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Test Report 025
ISHREFA
ISHREFB
ISHREFC
ISHA
ISHB
ISHC
EN
DVDD
AVDD
Block Diagram
ISHEN
ISHSL
CURRENT
SHARE
POWER-ON
RESET (POR)
PORSEL
ISHCOM
SC0
SC1
PVINx
CURRENT
SENSE
SLOPE
COMPENSATION
SOFTSTART
SS
EA
FB
GM
PWM
CONTROL
LOGIC
GATE
DRIVE
LXx
COMPENSATION
GND
PGNDx
UV
POWER-GOOD
PGOOD
REF
OCA
OCB
OCSSA
OCSSB
OVERCURRENT
ADJUST
PWM
REFERENCE
0.6V
TDI
BIT
TDO
FSEL
TPGM
TRIM
SYNC
M/S
PGNDx
PGNDx
AGND
DGND
FIGURE 1. ISL70002SEH BLOCK DIAGRAM
Test Description
Test Fixturing
Irradiation Facilities
No formal irradiation test fixturing was involved, as these DD
tests are ‘bag tests’ in the sense that the parts are irradiated in
an electrically inactive state with all leads shorted together.
Neutron irradiation was performed by the VPT team at the
University of Massachusetts Lowell Fast Neutron Irradiation (FNI)
facility, which provides a controlled 1MeV equivalent neutron
flux. Parts were tested in an unbiased configuration with all leads
shorted together in accordance with TM 1017 of MIL-STD-883. As
neutron irradiation activates many of the heavier elements found
in a packaged integrated circuit, the samples exposed at the
higher neutron levels required (as expected) ‘cooldown’ time
before shipment back to Intersil (Palm Bay, FL) for electrical
testing.
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Characterization Equipment And Procedures
Electrical testing was performed before and after irradiation
using the Intersil production Automated Test Equipment (ATE). All
electrical testing was performed at room temperature.
Experimental Matrix
Testing proceeded in general accordance with the guidelines of
MIL-STD-883 Test Method 1017. The experimental matrix
consisted of 5 samples irradiated at 2 x 1012 n/cm2, 5 irradiated
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Test Report 025
at 1 x 1013 n/cm2, 5 irradiated at 3 x 1013 n/cm2 and 5
irradiated at 1 x 1014 n/cm2. Two control units (serial numbers
68 and 70) were used.
TABLE 1. ATTRIBUTES DATA
FLUENCE, n/cm2
SAMPLE
SIZE
PASS
(Note 1)
FAIL
ISL70002SEH
3 x 1013
5
0
5
ISL70002SEH
1 x 1014
5
0
5
PART
The ISL70002SEHF/PROTO samples were drawn from Lot
WTTA0AA. Samples were packaged in the standard hermetic
64 Ld pin Ceramic Quad Flatpack (CQFP) production package,
code R64.A. Samples were screened to the SMD limits
over-temperature before the start of neutron testing.
NOTE:
1. “Pass” indicates a sample that passes all SMD limits.
Results
Variables Data
Neutron testing of the ISL70002SEH is complete and the results
are reported in the balance of this report. It should be carefully
realized when interpreting the data that each neutron irradiation
was performed on a different five-unit sample; this is not total
dose testing, where the damage is cumulative over a number of
downpoints.
Attributes Data
TABLE 1. ATTRIBUTES DATA
FLUENCE, n/cm2
SAMPLE
SIZE
PASS
(Note 1)
FAIL
ISL70002SEH
2 x 1012
5
5
0
ISL70002SEH
1 x 1013
5
0
5
PART
The plots in Figures 2 through 44 show data plots for key
parameters before and after irradiation to each level. The plots
show the median of each parameter as a function of neutron
irradiation. We chose to plot the median because of the small
sample sizes (five per cell) involved. We also show the applicable
electrical limits taken from the SMD; it should be carefully noted
that these limits are provided for guidance only as the
ISL70002SEH is not specified or guaranteed for the neutron
environment. Intersil does not design, qualify or guarantee its
parts for the DD environment, however, it has performed some
limited neutron testing for customer guidance.
Variables Data Plots
4.5
IssIshDis_3.6V
4
3.6V input
ISTANDBY, ISHARE DISABLED (mA)
3.5
Spec limit
3
2.5
2
1.5
1
0.5
0
1E+11
PRE-RAD
1E+12
1E+13
1E+14
NEUTRON FLUENCE (n/cm2)
FIGURE 2. ISL70002SEH standby supply current, current share disabled, input voltage of 3.6V, as a function of 1MeV equivalent neutron
irradiation at 2 x 1012 n/cm2, 1 x 1013 n/cm2, 3 x 1013 n/cm2 and 1 x 1014 n/cm2. Sample size for each cell was 5. The post total
dose irradiation SMD limit is 4.0mA maximum.
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Variables Data Plots (Continued)
7
IssIshDis_5.5V
6
Spec limit
ISTANDBY, ISHARE DISABLED (mA)
5.5V INPUT
5
4
3
2
1
0
1E+11
PRE-RAD
1E+12
1E+13
1E+14
NEUTRON FLUENCE (n/cm2)
FIGURE 3. ISL70002SEH standby supply current, current share disabled, input voltage of 5.5V, as a function of 1MeV equivalent neutron
irradiation at 2 x 1012 n/cm2, 1 x 1013 n/cm2, 3 x 1013 n/cm2 and 1 x 1014 n/cm2. Sample size for each cell was 5. The post total
dose irradiation SMD limit is 6.0mA maximum.
8
7
5.5V INPUT
CURRENT SHARE SLAVE MODE
IssIshSlv_EnL_5.5V
ISTANDBY, SLAVE MODE
6
Spec limit
5
4
3
2
1
0
PRE-RAD
1E+11
1E+12
1E+13
1E+14
NEUTRON FLUENCE (n/cm2)
FIGURE 4. ISL70002SEH standby supply current, current share enabled in SLAVE mode, EN = M/S = GND, input voltage of 5.5V, as a function of
1MeV equivalent neutron irradiation at 2 x 1012 n/cm2, 1 x 1013 n/cm2, 3 x 1013 n/cm2 and 1 x 1014 n/cm2. Sample size for each
cell was 5. The post total dose irradiation SMD limit is 7.0mA maximum.
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Variables Data Plots (Continued)
12
ISTANDBY, SLAVE MODE
10
5.5V INPUT
CURRENT SHARE SLAVE MODE
8
6
4
IssIshSlv_IcomL_5.5V
2
Spec limit
0
1E+11
PRE-RAD
1E+12
1E+13
1E+14
NEUTRON FLUENCE (n/cm2)
FIGURE 5. ISL70002SEH standby supply current, current share enabled in SLAVE mode, M/S = GND, ISHCOM = GND, input voltage of 5.5V, as a
function of 1MeV equivalent neutron irradiation at 2 x 1012 n/cm2, 1 x 1013 n/cm2, 3 x 1013 n/cm2 and 1 x 1014 n/cm2. Sample
size for each cell was 5. The post total dose irradiation SMD limit is 11.0mA maximum.
0.62
Vref_3 .6V
Spec limit
REFERENCE VOLTAGE (V)
Spec limit
0.61
0.6
3.6V INPUT
0.59
PRE-RAD
1E+11
1E+12
1E+13
1E+14
NE UTRON FLUENCE (n/cm2)
FIGURE 6. ISL70002SEH reference voltage at an input voltage of 3.6V as a function of 1MeV equivalent neutron irradiation at 2 x 1012 n/cm2, 1
x 1013 n/cm2, 3 x 1013 n/cm2 and 1 x 1014 n/cm2. Sample size for each cell was 5. The post total dose irradiation SMD limits are
0.594V to 0.604V.
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Variables Data Plots (Continued)
0.62
Vref_5.5V
Spec limit
REFERENCE VOLTAGE (V)
Spec limit
0.61
0.6
5.5V INPUT
0.59
PRE-RAD
1E+11
1E+12
1E+13
1E+14
NEUTRON FLUENCE (n/cm2)
FIGURE 7. ISL70002SEH reference voltage at an input voltage of 5.5V as a function of 1MeV equivalent neutron irradiation at 2 x 1012 n/cm2, 1
x 1013 n/cm2, 3 x 1013 n/cm2 and 1 x 1014 n/cm2. Sample size for each cell was 5. The post total dose irradiation SMD limits are
0.594V to 0.604V.
120 0
110 0
OSCILLATOR FREQUENCY (kHz)
100 0
900
800
700
600
Osc _3.6V
Spec limit
500
Spec limit
400
1E+11
PRE-RAD
3.6V INP UT
1E+12
1E+13
1E+14
NEUTRON FLUENCE (n/cm2)
FIGURE 8. ISL70002SEH internal oscillator frequency at an input voltage of 3.6V as a function of 1MeV equivalent neutron irradiation at
2 x 1012 n/cm2, 1 x 1013 n/cm2, 3 x 1013 n/cm2 and 1 x 1014 n/cm2. Sample size for each cell was 5. The post total dose
irradiation SMD limits are 850kHz to 1150kHz.
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Variables Data Plots (Continued)
1200
1100
OSCILLATOR FREQUENCY (kHz)
1000
900
800
700
600
Osc_5.5V
Spec limit
500
Spec limit
400
PRE-RAD
1E+11
5.5V INPUT
1E+12
1E+13
1E+14
NEUTRON FLUENCE, (n/cm2)
FIGURE 9. ISL70002SEH internal oscillator frequency at an input voltage of 5.5V as a function of 1MeV equivalent neutron irradiation at
2 x 1012 n/cm2, 1 x 1013 n/cm2, 3 x 1013 n/cm2 and 1 x 1014 n/cm2. Sample size for each cell was 5. The post total dose
irradiation SMD limits are 850kHz to 1150kHz.
300
MINIMUM LXx ON TIME (µs)
3.6V INPUT
200
MinTimeOnVmin
Spec limit
100
1E+11
PRE-RAD
1E+12
1E+13
1E+14
NEUTRON FLUENCE (n/cm2)
FIGURE 10. ISL70002SEH minimum LXx ON time at an input voltage of 3.6V as a function of 1MeV equivalent neutron irradiation at 2 x 1012
n/cm2, 1 x 1013 n/cm2, 3 x 1013 n/cm2 and 1 x 1014 n/cm2. Sample size for each cell was 5. The post total dose irradiation SMD
limit is 300.0ns maximum.
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Variables Data Plots (Continued)
300
MINIMUM LXx ON-TIME (ns)
5.5V INPUT
MinTimeOnVmax
Spec limit
200
100
PRE-RAD
1E+11
1E+12
1E+13
1E+14
NEUTRON FLUENCE (n/cm2)
FIGURE 11. ISL70002SEH minimum LXx ON-time at an input voltage of 5.5V as a function of 1MeV equivalent neutron irradiation at
2 x 1012 n/cm2, 1 x 1013 n/cm2, 3 x 1013 n/cm2 and 1 x 1014 n/cm2. Sample size for each cell was 5. The post total dose
irradiation SMD limit is 275.0ns maximum.
60
5.5V INPUT
MinTim eOffV max
MINIMUM LXx OFF-TIME (ns)
40
Spec limit
20
0
-20
PRE-RAD
1E+11
1E+12
1E+13
1E+14
NEUTRON FLUENCE (n/cm2)
FIGURE 12. ISL70002SEH minimum LXx OFF-time at an input voltage of 5.5V as a function of 1MeV equivalent neutron irradiation at
2 x 1012 n/cm2, 1 x 1013 n/cm2, 3 x 1013 n/cm2 and 1 x 1014 n/cm2. Sample size for each cell was 5. The post total dose
irradiation SMD limit is 50.0ns maximum.
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Variables Data Plots (Continued)
70
3.6V INPUT
60
SUPPLY CURRENT (mA)
50
40
30
20
Ioper_3.6V
10
Spec limit
0
1E+11
PRE-RAD
1E+12
1E+13
1E+14
NEUTRON FLUENCE (n/cm2)
FIGURE 13. ISL70002SEH operating supply current at an input voltage of 3.6V as a function of 1MeV equivalent neutron irradiation at
2 x 1012 n/cm2, 1 x 1013 n/cm2, 3 x 1013 n/cm2 and 1 x 1014 n/cm2. Sample size for each cell was 5. The post total dose
irradiation SMD limit is 65.0mA maximum.
120
100
5.5V INPUT
SUPPLY CURRENT (mA)
80
60
40
20
0
Ioper_5.5V
-20
-40
Spec limit
-60
PRE-RAD
1E+11
1E+1 2
1E+13
1E+14
NEUTRON FLUENCE (n/cm2)
FIGURE 14. ISL70002SEH operating supply current at an input voltage of 5.5V as a function of 1MeV equivalent neutron irradiation at 2 x 1012
n/cm2, 1 x 1013 n/cm2, 3 x 1013 n/cm2 and 1 x 1014 n/cm2. Sample size for each cell was 5. The post total dose irradiation SMD
limit is 105.0mA maximum.
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Variables Data Plots (Continued)
3.5
IoutMaxA
IoutMaxB
IoutMaxC
MAXIMUM ISHARE CURRENT (A)
3
Spec limit
Spec limit
2.5
2
1.5
1
1E+11
PRE-RAD
1E+12
1E+13
1E+14
NEUTRON FLUENCE (n/cm2)
FIGURE 15. ISL70002SEH maximum current share (A, B and C) output current as a function of 1MeV equivalent neutron irradiation at
2 x 1012 n/cm2, 1 x 1013 n/cm2, 3 x 1013 n/cm2 and 1 x 1014 n/cm2. Sample size for each cell was 5. This is an informational
parameter and is not specified in the SMD.
250
Rds LowerAvg
AVERAGE LOWER DEVICE rDS(ON) (mΩ)
Spec limit
Spec limit
200
150
100
50
1E+11
PRE-RAD
1E+1 2
1E+13
1E+14
NEUTRON FLUENCE (n/cm2)
FIGURE 16. ISL70002SEH average lower power transistor drain-to-source ON-resistance as a function of 1MeV equivalent neutron irradiation at
2 x 1012 n/cm2, 1 x 1013 n/cm2, 3 x 1013 n/cm2 and 1 x 1014 n/cm2. Sample size for each cell was 5. This is an informational
parameter and is not specified in the SMD.
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Variables Data Plots (Continued)
35
Rds LowerPa rallel
PARALLEL LOWER DEVICE rDS(ON) (mΩ)
30
Spe c limit
25
20
15
10
5
1E+11
PRE-RAD
1E+12
1E+13
1E+14
NEUTRON FLUENCE (n/cm2)
FIGURE 17. ISL70002SEH lower power transistor drain-to-source ON-resistance, all ten blocks in parallel, as a function of 1MeV equivalent
neutron irradiation at 2 x 1012 n/cm2, 1 x 1013 n/cm2, 3 x 1013 n/cm2 and 1 x 1014 n/cm2. Sample size for each cell was 5. The
post total dose irradiation SMD limit is 30.0mΩ maximum.
300
Rds UpperAv g
AVERAGE UPPER DEVICE rDS(ON) (mΩ)
Spec limit
Spec limit
250
200
150
100
1E+11
PRE-RAD
1E+12
1E+13
1E+14
NEUTRON FLUENCE (n/cm2)
FIGURE 18. ISL70002SEH average upper power transistor drain-to-source ON-resistance as a function of 1MeV equivalent neutron irradiation at
2 x 1012 n/cm2, 1 x 1013 n/cm2, 3 x 1013 n/cm2 and 1 x 1014 n/cm2. Sample size for each cell was 5. This is an informational
parameter and is not specified in the SMD.
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Variables Data Plots (Continued)
45
Rds UpperParallel
40
PARALLEL UPPER DEVICE rDS(ON) (mΩ)
Spec limit
35
30
25
20
15
10
5
PRE-RAD
1E+11
1E+12
1E+13
1E+14
NEUTRON FLUENCE (n/cm2)
FIGURE 19. ISL70002SEH upper power transistor drain-to-source ON-resistance, all ten blocks in parallel, as a function of 1MeV equivalent
neutron irradiation at 2 x 1012 n/cm2, 1 x 1013 n/cm2, 3 x 1013 n/cm2 and 1 x 1014 n/cm2. Sample size for each cell was 5. The
post total dose irradiation SMD limit is 40mΩ maximum.
2.5
SyncV IH_Vm in
Spec limit
SYNC PIN VIH (V)
3.6V INPUT
2
1.5
1E+11
PRE-RAD
1E+12
1E+13
1E+14
NEUTRON FLUENCE (n/cm2)
FIGURE 20. ISL70002SEH SYNC pin HIGH threshold, input voltage of 3.6V, as a function of 1MeV equivalent neutron irradiation at
2 x 1012 n/cm2, 1 x 1013 n/cm2, 3 x 1013 n/cm2 and 1 x 1014 n/cm2. Sample size for each cell was 5. The post total dose
irradiation SMD limit is 2.3V maximum.
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Variables Data Plots (Continued)
2.5
SyncV IH_Vm ax
Spec limit
SYNC PIN VIH (V)
5.5V INPUT
2
1.5
1E+11
PRE-RAD
1E+12
1E+13
1E+14
NEUTRON FLUENCE (n/cm2)
FIGURE 21. ISL70002SEH SYNC pin HIGH threshold, input voltage of 5.5V, as a function of 1MeV equivalent neutron irradiation at
2 x 1012 n/cm2, 1 x 1013 n/cm2, 3 x 1013 n/cm2 and 1 x 1014 n/cm2. Sample size for each cell was 5. The post total dose
irradiation SMD limit is 2.3V maximum.
2
3.6V INPUT
SYNC PIN VIL (V)
1.5
1
SyncV IL_Vm in
Spec limit
0.5
PRE-RAD
1E+11
1E+12
1E+13
1E+14
NEUTRON FLUENCE (n/cm2)
FIGURE 22. ISL70002SEH SYNC pin LOW threshold, input voltage of 3.6V, as a function of 1MeV equivalent neutron irradiation at 2 x 1012 n/cm2,
1 x 1013 n/cm2, 3 x 1013 n/cm2 and 1 x 1014 n/cm2. Sample size for each cell was 5. The post total dose irradiation SMD limit is
1.0V minimum.
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Variables Data Plots (Continued)
2
5.5V INPUT
SYNC PIN VIL (VMAX)
1.5
1
SyncV IL_Vm ax
Spec limit
0.5
PRE-RAD
1E+11
1E+12
1E+13
1E+14
NEUTRON FLUENCE (n/cm2)
FIGURE 23. ISL70002SEH SYNC pin LOW threshold, input voltage of 5.5V, as a function of 1MeV equivalent neutron irradiation at 2 x 1012 n/cm2,
1 x 1013 n/cm2, 3 x 1013 n/cm2 and 1 x 1014 n/cm2. Sample size for each cell was 5. The post total dose irradiation SMD limit is
1.0V minimum.
0.65
0.64
3.6V INPUT
ENABLE INPUT THRESHOLD (VMIN)
0.63
0.62
0.61
0.6
0.59
EN_Thr_V min
0.58
Spec limit
Spec limit
0.57
0.56
0.55
1E+11
PRE-RAD
1E+12
1E+13
1E+14
NE UTRON FLUENCE (n/cm2)
FIGURE 24. ISL70002SEH Enable input threshold voltage, input voltage of 3.6V, as a function of 1MeV equivalent neutron irradiation at
2 x 1012 n/cm2, 1 x 1013 n/cm2, 3 x 1013 n/cm2 and 1 x 1014 n/cm2. Sample size for each cell was 5. The post total dose
irradiation SMD limits are 0.560V to 0.640V.
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Variables Data Plots (Continued)
0.65
0.64
5.5V INPUT
ENABLE INPUT THRESHOLD (V)
0.63
0.62
0.61
0.6
0.59
0.58
EN_Thr_V max
0.57
Spec limit
0.56
Spec limit
0.55
1E+11
PRE-RAD
1E+12
1E+13
1E+14
NE UTRON FLUENCE (n/cm2)
FIGURE 25. ISL70002SEH Enable input threshold voltage, input voltage of 5.5V, as a function of 1MeV equivalent neutron irradiation at
2 x 1012 n/cm2, 1 x 1013 n/cm2, 3 x 1013 n/cm2 and 1 x 1014 n/cm2. Sample size for each cell was 5. The post total dose
irradiation SMD limits are 0.560V to 0.640V.
3
POR RISING THRESHOLD (V)
POR SELECT AT GND
2.9
2.8
PWRIN_V start_POR_gnd
Spec limit
2.7
Spec limit
2.6
PRE-RAD
1E+11
1E+12
1E+13
1E+14
NEUTRON FLUENCE (n/cm2)
FIGURE 26. ISL70002SEH POR rising threshold, PORSEL at ground, as a function of 1MeV equivalent neutron irradiation at 2 x 1012 n/cm2,
1 x 1013 n/cm2, 3 x 1013 n/cm2 and 1 x 1014 n/cm2. Sample size for each cell was 5. The post total dose irradiation SMD limits are
2.65V to 2.95V.
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Variables Data Plots (Continued)
250
POR HYSTERESIS THRESHOLD (V)
POR SELECT AT GND
200
150
PWRIN_V hys _POR_gnd
Spec limit
100
Spec limit
50
1E+11
PRE-RAD
1E+1 2
1E+13
1E+14
NEUTRON FLUENCE (n/cm2)
FIGURE 27. ISL70002SEH POR hysteresis, PORSEL at ground, as a function of 1MeV equivalent neutron irradiation at 2 x 1012 n/cm2,
1 x 1013 n/cm2, 3 x 1013 n/cm2 and 1 x 1014 n/cm2. Sample size for each cell was 5. The post total dose irradiation SMD limits are
70.0mV to 240.0mV.
4.5
POR SELECT At VIN
POR RISING THRESHOLD (V)
4.4
4.3
PWRIN_V start _POR_Hi
Spec limit
4.2
Spec limit
4.1
4
PRE-RAD
1E+11
1E+12
1E+13
1E+14
NEUTRON FLUENCE (n/cm2)
FIGURE 28. ISL70002SEH POR rising threshold, PORSEL at VIN, as a function of 1MeV equivalent neutron irradiation at 2 x 1012 n/cm2,
1 x 1013 n/cm2, 3 x 1013 n/cm2 and 1 x 1014 n/cm2. Sample size for each cell was 5. The post total dose irradiation SMD limits are
4.10V to 4.45V.
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Test Report 025
Variables Data Plots (Continued)
450
POR SELECT AT VIN
POR HYSTERESIS (mV)
400
350
300
PWRIN_V hys _POR_Hi
Spec limit
250
Spec limit
200
PRE-RAD
1E+11
1E+12
1E+13
1E+14
NEUTRON FLUENCE (n/cm2)
FIGURE 29. ISL70002SEH POR hysteresis, PORSEL at VIN, as a function of 1MeV equivalent neutron irradiation at 2 x 1012 n/cm2, 1 x 1013
n/cm2, 3 x 1013 n/cm2 and 1 x 1014 n/cm2. Sample size for each cell was 5. The post total dose irradiation SMD limits are 225.0mV
to 425.0mV.
1.2
1
POR SELECT AT VIN
PGO OD_Lkg_Vmax
PGOOD LEAKAGE (µA)
0.8
Spec limit
Spec limit
0.6
0.4
0.2
0
-0.2
1E+11
PRE-RAD
1E+12
1E+13
1E+14
NEUTRON FLUENCE (n/cm2)
FIGURE 30. ISL70002SEH PGOOD input leakage as a function of 1MeV equivalent neutron irradiation at 2 x 1012 n/cm2, 1 x 1013 n/cm2,
3 x 1013 n/cm2 and 1 x 1014 n/cm2. Sample size for each cell was 5. The post total dose irradiation SMD limit is 1.0µA maximum.
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Variables Data Plots (Continued)
UNDERVOLTAGE TRIP THRESHOLD (% OF VREF)
80
5.5V INPUT
UV_TripThresVoter_Vm ax
78
Spec limit
Spec limit
76
74
72
70
1E+11
PRE-RAD
1E+12
1E+13
1E+14
NEUTRON FLUENCE (n/cm2)
FIGURE 31. ISL70002SEH undervoltage trip threshold as a function of 1MeV equivalent neutron irradiation at 2 x 1012 n/cm2, 1 x 1013 n/cm2,
3 x 1013 n/cm2 and 1 x 1014 n/cm2. Sample size for each cell was 5. The post total dose irradiation SMD limits are 71.0% to 79.0%.
93
UNDERVOLTAGE RECOVERY THRESHOLD (% OF VREF)
UV_RecvThresVoter_Vma x
Spec limit
5.5 V INPUT
91
Spec limit
89
87
85
83
1E+11
PRE-RAD
1E+12
1E+13
1E+14
NEUTRON FLUENCE (n/cm2)
FIGURE 32. ISL70002SEH undervoltage recovery threshold as a function of 1MeV equivalent neutron irradiation at 2 x 1012 n/cm2, 1 x 1013
n/cm2, 3 x 1013 n/cm2 and 1 x 1014 n/cm2. Sample size for each cell was 5. The post total dose irradiation SMD limits are 84.0% to
92.0%.
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Test Report 025
Variables Data Plots (Continued)
30
E rrAm pVIOChA_ Vmin
E rrAm pVIOChB_ Vmin
ERROR AMP OFFSET VOLTAGE (mV)
25
E rrAm pVIOChC_ Vmin
S pec limit
S pec limit
20
15
10
5
0
3.6V INPUT
-5
PRE-RAD
1E+11
1E+12
1E+13
1E+14
NEU TRON FLUENCE (n/cm2)
FIGURE 33. ISL70002SEH error amplifier input offset voltage, channels A, B and C, at an input voltage of 3.6V, as a function of 1MeV equivalent
neutron irradiation at 2 x 1012 n/cm2, 1 x 1013 n/cm2, 3 x 1013 n/cm2 and 1 x 1014 n/cm2. Sample size for each cell was 5. The
post total dose irradiation SMD limits are -1.0mV to 3.0mV.
50
5.5V INPUT
ErrAmpVIOChA_Vmax
45
ERROR AMP OFFSET VOLTAGE (mV)
ErrAmpVIOChB_Vmax
40
ErrAmpVIOChC_Vmax
35
Spec limit
30
Spec limit
25
20
15
10
5
0
-5
PRE-RAD
1E+11
1E+12
1E+13
1E+14
NEUTRON FLUENCE (n/cm2)
FIGURE 34. ISL70002SEH error amplifier input offset voltage, channels A, B and C, at an input voltage of 5.5V as a function of 1MeV equivalent
neutron irradiation at 2 x 1012 n/cm2, 1 x 1013 n/cm2, 3 x 1013 n/cm2 and 1 x 1014 n/cm2. Sample size for each cell was 5. The
post total dose irradiation SMD limits are -1.0mV to 3.0mV.
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Variables Data Plots (Continued)
14
AdjMargin_Vmin
Spec limit
12
3.6V INPUT
ADJUST MARGIN (mV)
Spec limit
10
8
6
4
2
1E+11
PRE-RAD
1E+12
1E+13
1E+14
NEUTRON FLUENCE (n/cm2)
FIGURE 35. ISL70002SEH adjust margin as a function of 1MeV equivalent neutron irradiation at 2 x 1012 n/cm2, 1 x 1013 n/cm2,
3 x 1013 n/cm2 and 1 x 1014 n/cm2. Sample size for each cell was 5. This is an informational parameter and is not specified in the
SMD; the internal limits are 4mV to 12.5mV.
350
IoutIpilotRatioC
IOUT TO PILOT CURRENT RATIO/1000
Spec limit
Spec limit
300
250
200
1E+11
PRE-RAD
1E+1 2
1E+13
1E+14
NEUTRON FLUENCE (n/cm2)
FIGURE 36. ISL70002SEH output current to pilot device current ratio (1000x scale factor) as a function of 1MeV equivalent neutron irradiation at
2 x 1012 n/cm2, 1 x 1013 n/cm2, 3 x 1013 n/cm2 and 1 x 1014 n/cm2. Sample size for each cell was 5. This is an informational
parameter and is not specified in the SMD; the internal limits are 245 to 315.
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Variables Data Plots (Continued)
20
SLOPE COMPENSATION SLEW RATE (A/µs)
SlpCm pVm inFs1SLs11 A
3.6V INPUT
SlpCm pVm inFs1SLs11 B
SlpCm pVm inFs1SLs11 C
Spec limit
15
Spec limit
10
5
1E+11
PRE-RAD
1E+12
1E+13
1E+14
NEUTRON FLUENCE (n/cm2)
FIGURE 37. ISL70002SEH slope compensation current slew rate, input voltage of 3.6V, channels A, B and C, as a function of 1MeV equivalent
neutron irradiation at 2 x 1012 n/cm2, 1 x 1013 n/cm2, 3 x 1013 n/cm2 and 1 x 1014 n/cm2. Sample size for each cell was 5. The
post total dose irradiation SMD limits are 5.9A/μs to 17.7A/μs.
20
SLOPE COMPENSATION SLEW RATE (A/µs)
SlpCmpVmaxF s1SLs11A
5.5V INPUT
SlpCmpVmaxF s1SLs11B
SlpCmpVmaxF s1SLs11C
Spec limit
15
Spec limit
10
5
1E+11
PRE-RAD
1E+12
1E+13
1E+14
NEU TRON FLUENCE (n/cm2)
FIGURE 38. ISL70002SEH slope compensation current slew rate, input voltage of 5.5V, channels A, B and C, as a function of 1MeV equivalent
neutron irradiation at 2 x 1012 n/cm2, 1 x 1013 n/cm2, 3 x 1013 n/cm2 and 1 x 1014 n/cm2. Sample size for each cell was 5. The
post total dose irradiation SMD limits are 5.9A/μs to 17.7A/μs.
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Variables Data Plots (Continued)
OVERCURRENT TRIP LEVEL, 6A (mA)
800
OverIA_6A_Vmin
700
OverIA_6A_Vmax
Spec limit
Spec limit
600
500
PRE-RAD
1E+11
1E+12
1E+13
1E+14
NEUTRON FLUENCE (n/cm2)
FIGURE 39. ISL70002SEH overcurrent trip level, 6A, input voltage of 3.6V (blue) and 5.5V (red), as a function of 1MeV equivalent neutron
irradiation at 2 x 1012 n/cm2, 1 x 1013 n/cm2, 3 x 1013 n/cm2 and 1 x 1014 n/cm2. Sample size for each cell was 5. The post total
dose irradiation SMD limits are 535.0mA to 735.0mA.
265 0
OVERCURRENT TRIP LEVEL, 24A (mA)
Ove rIA_24A_Vm in
Ove rIA_24A_Vm a x
255 0
Spec limit
Spec limit
245 0
235 0
225 0
1E+11
PRE-RAD
1E+12
1E+13
1E+14
NEUTRON FLUENCE (n/cm2)
FIGURE 40. ISL70002SEH overcurrent trip level, 24A, input voltages of 3.6V (blue) and 5.5V (red), as a function of 1MeV equivalent neutron
irradiation at 2 x 1012 n/cm2, 1 x 1013 n/cm2, 3 x 1013 n/cm2 and 1 x 1014 n/cm2. Sample size for each cell was 5. The post total
dose irradiation SMD limits are 2300mA to 2600mA.
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Variables Data Plots (Continued)
4
3
ENABLE LOW CURRENT (µA)
2
1
0
-1
EN_IIL
-2
Spec limit
Spec limit
-3
-4
1E+11
PRE-RAD
1E+12
1E+13
1E+14
NEUTRON FLUENCE (n/cm2)
FIGURE 41. ISL70002SEH enable LOW current as a function of 1MeV equivalent neutron irradiation at 2 x 1012 n/cm2, 1 x 1013 n/cm2,
3 x 1013 n/cm2 and 1 x 1014 n/cm2. Sample size for each cell was 5. The post total dose irradiation SMD limits are -3.0µA to 3.0µA.
0.5
0.4
ENABLE HIGH CURRENT (µA)
0.3
0.2
0.1
0
-0.1
-0.2
EN_IIH
-0.3
Spec limit
Spec limit
-0.4
-0.5
1E+11
PRE-RAD
1E+12
1E+13
1E+14
NEUTRON FLUENCE (n/cm2)
FIGURE 42. ISL70002SEH enable HIGH current as a function of 1MeV equivalent neutron irradiation at 2 x 1012 n/cm2, 1 x 1013 n/cm2,
3 x 1013 n/cm2 and 1 x 1014 n/cm2. Sample size for each cell was 5. This is an informational parameter and is not specified in the
SMD; the internal limits are -0.4µA to 0.4µA.
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Variables Data Plots (Continued)
0.5
AVERAGE LXx LOW LEAKAGE (µA)
0.3
0.1
-0.1
LXLkgLow
Spe c limit
Spec limit
-0.3
-0.5
1E+11 AD
PRE-R
1E+12
1E+13
1E+14
NEUTRO N FLUENCE (n/cm2)
FIGURE 43. ISL70002SEH average LXx LOW leakage as a function of 1MeV equivalent neutron irradiation at 2 x 1012 n/cm2, 1 x 1013 n/cm2,
3 x 1013 n/cm2 and 1 x 1014 n/cm2. Sample size for each cell was 5. The average LXx LOW leakage is an informational parameter
and is not specified in the SMD; the internal limits are -0.4µA to 0.4µA.
0.5
AVERAGE LXx HIGH LEAKAGE (µA)
0.3
0.1
-0.1
LXLkgHigh
Spec limit
Spec limit
-0.3
-0.5
PRE-RAD
1E+11
1E+12
1E+13
1E+14
NEUTRON FLUENCE (n/cm2)
FIGURE 44. ISL70002SEH average LXx HIGH leakage as a function of 1MeV equivalent neutron irradiation at 2 x 1012 n/cm2, 1 x 1013 n/cm2,
3 x 1013 n/cm2 and 1 x 1014 n/cm2. Sample size for each cell was 5. The average LXx HIGH leakage is an informational parameter
and is not specified in the SMD; the internal limits are -0.4µA to 0.4µA.
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Test Report 025
Conclusion
after 1 x 1013 n/cm2 and 3 x 1013 n/cm2; it may be usable at
these levels with some derating.
This report summarizes results of 1MeV equivalent neutron
testing of the ISL70002SEH integrated FET point of load
regulator. The test was conducted in order to determine the
sensitivity of the part to Displacement Damage (‘DD’) caused by
neutron or proton environments. Neutron fluences ranged from
2 x 1012 n/cm2 to 1 x 1014 n/cm2. This project was carried out
in collaboration with VPT, Inc. (Blacksburg, VA), and their support
is gratefully acknowledged.
The part was effectively nonfunctional after 1 x 1014 n/cm2, see
for example Figures 6 and 7, which show reference voltage
degradation, Figures 8 and 9 showing oscillator frequency,
Figures 13 and 14 showing supply current, Figures 33 and 34
showing error amplifier input offset voltage and Figures 37 and
38 showing the slope compensation current slew rate.
ATE characterization testing at all downpoints showed rejects to
the data sheet limits after 1 x 1013 n/cm2, 3 x 1013 n/cm2 and
1 x 1014 n/cm2 Variables data for selected parameters is
presented in Figures 3 through 44. The part met all
specifications (‘Bin 1’) after 2 x 1011 n/cm2 and was functional
Appendices
Table 2 shows the reported parameters. The limits are from the
SMD and are provided for guidance only as the part is not
designed or guaranteed for the neutron environment.
TABLE 2. REPORTED PARAMETERS
FIGURE
PARAMETER
LIMIT, LOW
LIMIT, HIGH
UNITS
NOTES
2
Standby Supply Current
-
4.0
mA
ISHARE disabled, 3.6VIN
3
Standby Supply Current
-
6.0
mA
ISHARE disabled, 5.5VIN
4
Standby Supply Current
-
7.0
mA
ISHARE enabled, 5.5VIN
5
Standby Supply Current
-
11.0
mA
ISHARE enabled, 5.5VIN
6
Reference Voltage
0.594
0.604
V
3.6VIN
7
Reference Voltage
0.594
0.604
V
5.5VIN
8
Oscillator Frequency
850
1150
kHz
3.6VIN
9
Oscillator Frequency
850
1150
kHz
5.5VIN
10
Minimum LX On-Time
-
300.0
ns
3.6VIN
11
Minimum LX On-Time
-
275.0
ns
5.5VIN
12
Minimum LX Off-Time
-
50.0
ns
5.5VIN
13
Operating Supply Current
-
65.0
mA
3.6VIN
14
Operating Supply Current
-
105.0
mA
5.5VIN
15
Maximum ISHARE Output
1.7
2.9
A
Informational parameter
16
Avg. rDS(ON), Lower Device
95
200
mΩ
Informational parameter
17
Parallel rDS(ON), Lower Device
7
30
mΩ
18
Avg. rDS(ON), Upper Device
150
225
mΩ
19
Parallel rDS(ON), Upper Device
7
40
mΩ
20
SYNC Pin High Threshold
-
2.3
V
3.6VIN
21
SYNC Pin High Threshold
-
2.3
V
5.5VIN
22
SYNC Pin Low Threshold
1.0
-
V
3.6VIN
23
SYNC Pin Low Threshold
1.0
-
V
5.5VIN
24
Enable Input Threshold Voltage
0.560
0.640
V
3.6VIN
25
Enable Input Threshold Voltage
0.560
0.640
V
5.5VIN
26
POR Rising Threshold Voltage
2.65
2.95
V
PORSEL at ground
27
POR Hysteresis Voltage
70.0
240.0
mV
PORSEL at ground
28
POR Rising Threshold Voltage
4.10
4.45
V
PORSEL at VIN
29
POR Hysteresis Voltage
225.0
425.0
mV
PORSEL at VIN
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TABLE 2. REPORTED PARAMETERS
FIGURE
PARAMETER
LIMIT, LOW
LIMIT, HIGH
UNITS
-
1.0
μA
NOTES
30
PGOOD Input Leakage
31
Undervoltage Trip Threshold
71.0
79.0
%
5.5VIN
32
Undervoltage Recovery Threshold
84.0
92.0
%
5.5VIN
33
Error Amp. Input Offset Voltage
-1.0
3.0
mV
Channels A, B and C, 3.6VIN
34
Error Amp. Input Offset Voltage
-1.0
3.0
mV
Channels A, B and C, 5.5VIN
35
Adjust Margin
-1.0
3.0
mV
Informational parameter
36
Output Current To Pilot Ratio
245
315
-
Informational parameter
37
Slope Compensation Slew Rate
5.9
17.7
A/μs
3.6VIN
38
Slope Compensation Slew Rate
5.9
17.7
A/μs
5.5VIN
39
Overcurrent Trip Level
535.0
735.0
mA
6A, 3.6VIN
40
Overcurrent Trip Level
2300.0
2600.0
mA
24A, 3.6VIN
41
EN(IIL)
-3.0
3.0
µA
42
EN(IIH)
-0.4
0.4
µA
Informational parameter
43
LXx Leakage LOW
-0.4
0.4
µA
Informational parameter
44
LXx Leakage HIGH
-0.4
0.4
µA
Informational parameter
Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without notice. Accordingly, the reader is
cautioned to verify that the document is current before proceeding.
For information regarding Intersil Corporation and its products, see www.intersil.com
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