ESD Diodes MAZMxxxH Series Silicon planar type Unit: mm 1.60±0.05 0.55±0.05 1.00±0.05 5° 1.20±0.05 1.60±0.05 • Four elements anode-common type • Power dissipation PD : 150 mW 4 1.20±0.05 5 ■ Features 1.60±0.05 For surge absorption circuit 1 2 3 0.10±0.03 0.20±0.05 Power dissipation * Symbol Rating Unit PD 150 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Note) *: PD = 150 mW achieved with a printed circuit board. 0 ∼ 0.01 Parameter (0.15) 5° ■ Absolute Maximum Ratings Ta = 25°C 1 : Cathode 1 4 : Cathode 3 2 : Anode 1, 2, 3, 4 5 : Cathode 4 3 : Cathode 2 SSMini5-F1 Package Internally connected circuit 4 5 1 2 3 ■ Common Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Conditions * VZ IZ Specified value Zener rise operating resistance RZK IZ Specified value Zener operating resistance RZ IZ Specified value Reverse current IR VR Specified value Zener voltage Min Typ Max Unit V Refer to the list of the electrical characteristics within part numbers Ω Ω µA Note) 1. Measuring methods are based JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. Electrostatic breakdown voltage is ±10 kV Test method: IEC1000-4-2 (C = 150 pF, R = 330 Ω, Contact discharge: 10 times) 3. *: The temperature must be controlled 25°C for VZ mesurement. VZ value measured at other temperature must be adjusted to VZ (25°C) VZ guaranted 20 ms after current flow. Publication date: November 2004 SKE00021AED 1 MAZMxxxH Series ■ Electrical characteristics within part numbers Ta = 25°C ± 3°C Zener Zener rise Reverse current operating operating (DC) resistance resistance IR (µA) RZ (Ω) RZK (Ω) VR IZ = 5 mA IZ = 0.5 mA Max (V) Max Max Zener voltage Part number VZ (V) Min Nom Max MAZM062H 5.8 6.2 6.6 5 0.2 4 50 100 6.2Z MAZM068H 6.4 6.8 7.2 5 0.1 4 30 60 6.8Z MAZM082H 7.7 8.2 8.7 5 0.1 5 30 60 8.2Z MAZM100H 9.4 10.0 10.6 5 0.05 7 30 60 10Z MAZM120H 11.4 12.0 12.7 5 0.05 9 30 80 12Z PD Ta I Z VZ 102 250 50 100 150 200 4 Ambient temperature Ta (°C) 6 MAZM120H 10 MAZM100H MAZM082H MAZM068H 10 Zener current IZ (mA) 102 Temperature coefficient of zener voltage SZ (mV / °C) Zener operating resistance RZ (Ω) Ta = 25°C 1 Forward current IF (mA) MAZM120H 10−1 8 10 12 14 0 0.4 12 0.8 1.2 Forward voltage VF (V) SZ IZ MAZM062H 10−1 1 Zener voltage VZ (V) RZ IZ 102 1 10 10−2 10−3 250 Ct VR 30 Ta = 25°C to 150°C Ta = 25°C MAZM120H 10 8 Terminal capacitance Ct (pF) 0 MAZM100H 10−2 50 MAZM082H 10−1 MAZM068H 100 1 MAZM062H 150 0 Ta = 25°C 10 Zener current IZ (mA) Power dissipation PD (mW) 0.8 mm Cu foil t = 0.035 mm 200 I F VF 102 Ta = 25°C 10 mm 10 mm 2 Marking symbol IZ (mA) MAZM100H 6 MAZM082H 4 MAZM068H 2 20 MAZM068H MAZM062H MAZM082H 10 MAZM100H MAZM062H MAZM120H 0 0 10 20 30 40 50 Zener current IZ (mA) SKE00021AED 60 0 0 4 8 Reverse voltage VR (V) 12 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical information as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: • Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. • Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2003 SEP