PANASONIC MA27P02

PIN diodes
MA27P02
Silicon epitaxial planar type
Unit: mm
0.27+0.05
–0.02
For high frequency switch
0.13+0.05
–0.02
Symbol
Rating
Unit
Reverse voltage
VR
60
V
Forward current
IF
100
mA
Power dissipation *
PD
150
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
0 to 0.01
Parameter
0.52±0.03
■ Absolute Maximum Ratings Ta = 25°C
0.15 max.
0.60±0.05
0.15 min.
1
5°
0.15 min.
• Small terminal capacitance Ct
• Small forward dynamic resistance rf
• Ultraminiature package and surface mounting type
1.0 mm × 0.6 mm (height: 0.52 mm)
5°
1.00±0.05
■ Features
1.40±0.05
2
1: Anode
2: Cathode
SSSMini2-F2 Package
Marking Symbol: Y
Note) *: With a glass epoxy PC board
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Max
Unit
VF
IF = 10 mA
1.0
V
Reverse current
IR
VR = 60 V
100
nA
Terminal capacitance
Ct
VR = 1 V, f = 1 MHz
0.5
pF
rf
IF = 10 mA, f = 100 MHz
2.0
Ω
Forward voltage
Forward dynamic resistance
*
Conditions
Min
Typ
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. *: rf measurement device ; agilent model 4291B
Publication date: March 2004
SKL00008BED
1
MA27P02
IF  V F
IR  VR
1.0
102
100°C
25°C
Terminal capacitance Ct (pF)
Ta = 150°C
1
Reverse current IR (nA)
−20°C
100°C
10
f = 1 MHz
Ta = 25°C
Ta = 150°C
102
Forward current IF (mA)
Ct  VR
103
103
10
1
10−1
25°C
10−2
10−1
0.8
0.6
0.4
0.2
10−3
10−2
10−4
0
0.2
0.4
0.6
0.8
1.0
1.2
0
20
40
Reverse voltage VR (V)
Forward voltage VF (V)
rf  I F
Forward dynamic resistance rf (Ω)
103
f = 100 MHz
Ta = 25°C
102
10
1
10−1
10 −2
10 −1
1
10
Forward current IF (mA)
2
60
SKL00008BED
0
0
10
20
Reverse voltage VR (V)
30
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Consult our sales staff in advance for information on the following applications:
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(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not
be liable for any defect which may arise later in your equipment.
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2003 SEP