SSCD110H

ZOWIE
Schottky Barrier Diode
(20V~100V / 1.0A)
SSCD102H THRU SSCD110H
OUTLINE DIMENSIONS
FEATURES
Halogen-free type
Compliance to RoHS product
Lead less chip form, no lead damage
Low power loss, High efficiency
High current capability, low VF
Plastic package has Underwriters Laboratory Flammability
Classification 94V-0
1.60
Typ.
Case : 1206
1.90 ± 0.2
*
*
*
*
*
*
Unit : mm
Mounting Pad Layout
3.40 ± 0.2
2.00
MAX.
40
R0.
APPLICATION
Switching mode power supply applications
Portable equipment battery applications
General rectification
DC / DC Converter
Telecommunication
1.50
MIN.
0.70 ± 0.2
0.70 ± 0.2
1.0
MIN.
4.0
REF.
+ 0.2
0.96- 0.1
*
*
*
*
*
MECHANICAL DATA
Equivalent : SOD-123
Case : Packed with FRP substrate and epoxy underfilled
Terminals : Pure Tin plated (Lead-Free),
solderable per MIL-STD-750, Method 2026.
Polarity : Laser Cathode band marking
Weight : 0.012 gram
MARKING
A2.
PACKING
Voltage class: 2 = 20V, 4 = 40V, 6 = 60V, 10 = 100V
* 3,000 pieces per 7" (178mm ± 2mm) reel
* 4 reels per box
* 6 boxes per carton
o
Absolute Maximum Ratings (Ta = 25 C)
SSCD
ITEM
Symbol
Repetitive peak reverse voltage
VRRM
Average forward current
IF(AV)
Peak forward surge current
IFSM
Operating junction temperature Range
Conditions
102H
104H
106H
110H
20
40
60
100
V
1.0
8.3ms single half sine-wave
A
20
A
-55 to +125
Tj
TSTG
Storage temperature Range
Unit
-55 to +150
-55 to +150
o
C
o
C
o
Electrical characteristics (Ta = 25 C)
ITEM
Forward voltage (NOTE 1)
Repetitive peak reverse current (NOTE 1)
Junction capacitance
Thermal resistance
Symbol
VF
IRRM
Cj
Rth(JA)
Rth(JL)
Conditions
Type
Min.
Typ.
Max.
Unit
IF = 0.1A
IF = 0.5A
IF = 1.0A
SSCD102H
/
SSCD104H
-
0.32
0.40
0.46
0.50
V
IF = 0.1A
IF = 0.5A
IF = 1.0A
SSCD106H
-
0.35
0.48
0.62
0.70
V
IF = 0.1A
IF = 0.5A
IF = 1.0A
SSCD110H
-
0.45
0.66
0.76
0.85
V
VR = Max. VRRM , Ta = 25 oC
-
0.015
0.2
mA
VR = 4V, f = 1.0 MHz
-
110
-
Junction to ambient (NOTE 2)
Junction to lead (NOTE 2)
-
88
28
pF
-
o
C/W
-
o
C/W
NOTES : (1) Pulse test width PW=300usec , 1% duty cycle.
(2) Mounted on P.C. board with 0.2 x 0.2"(5.0 x5.0mm) copper pad areas.
REV. 1
2013/05
ZOWIE
SSCD102H THRU SSCD110H
FIG.1 - FORWARD CURRENT DERATING CURVE
FIG.2 - MAXIMUM NON-REPETITIVE
PEAK FORWARD SURGE CURRENT
25
PEAK FORWARD SURGE CURRENT,
AMPERES
1.0
AVERAGE FORWARD RECTIFIED
CURRENT, AMPERES
(20V~100V / 1.0A)
SSCD106H & SSCD110H
SSCD102H & SSCD104H
0.5
RESISTIVE OR
INDUCTIVE LOAD
P.C.B. MOUNTED ON
0.2X0.2"(5.0X5.0mm)
COPPER PAD AREAS
0
8.3ms Single Half Sine-Wave
(JEDEC Method)
20
15
10
5
0
0
50
70
90
110
130
150
1
170
10
o
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
FIG.3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
100
INSTANTANEOUS REVERSE CURRENT,
MILLIAMPERES
10
IINSTANTANEOUS FORWARD CURRENT, (A)
100
NUMBER OF CYCLES AT 60Hz
LEAD TEMPERATURE, C
1.00
SSCD106H
SSCD110H
0.10
SSCD102H~104H
0.01
10
o
TJ =100 C
1.0
0.10
o
TJ =25 C
0.01
o
Ta=25 C
.001
0.001
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0
0.8
20
FORWARD VOLTAGE, (V)
40
60
80
100
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
FIG.5 - TYPICAL JUNCTION CAPACITANCE
400
JUNCTION CAPACITANCE, pF
o
TJ=25 C
f=1.0MHz
Vsig=50mVP-P
100
10
.1
1.0
10
100
REVERSE VOLTAGE, VOLTS
REV. 1
2013/05