SO T8 83 BC856BM 60 V, 100 mA PNP general-purpose transistor 19 August 2015 Product data sheet 1. General description PNP general-purpose transistor in a leadless ultra small DFN1006-3 (SOT883) SurfaceMounted Device (SMD) plastic package. NPN complement: BC846BM. 2. Features and benefits • • • Leadless ultra small SMD plastic package Power dissipation comparable to SOT23 AEC-Q101 qualified 3. Applications • • General-purpose switching and amplification Mobile applications 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - -60 V IC collector current - - -100 mA hFE DC current gain 220 - 475 VCE = -5 V; IC = -2 mA; Tamb = 25 °C 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 B base 1 2 E emitter 2 3 C collector Graphic symbol 3 3 Transparent top view DFN1006-3 (SOT883) Scan or click this QR code to view the latest information for this product 1 2 sym013 BC856BM NXP Semiconductors 60 V, 100 mA PNP general-purpose transistor 6. Ordering information Table 3. Ordering information Type number BC856BM Package Name Description Version DFN1006-3 DFN1006-3: leadless ultra small plastic package; 3 solder lands SOT883 7. Marking Table 4. Marking codes Type number Marking code BC856BM J2 BC856BM Product data sheet All information provided in this document is subject to legal disclaimers. 19 August 2015 © NXP Semiconductors N.V. 2015. All rights reserved 2 / 12 BC856BM NXP Semiconductors 60 V, 100 mA PNP general-purpose transistor 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCBO collector-base voltage open emitter - -80 V VCEO collector-emitter voltage open base - -60 V VEBO emitter-base voltage open collector - -6 V IC collector current - -100 mA ICM peak collector current - -200 mA IBM peak base current - -200 mA Ptot total power dissipation - 250 mW Tj junction temperature - 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C [1] single pulse; tp ≤ 1 ms Tamb ≤ 25 °C [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. aaa-019152 300 Ptot (mW) 200 100 0 -75 -25 25 75 125 Tj (°C) 175 FR4 PCB, standard footprint Fig. 1. Power derating curve DFN1006-3 (SOT883) BC856BM Product data sheet All information provided in this document is subject to legal disclaimers. 19 August 2015 © NXP Semiconductors N.V. 2015. All rights reserved 3 / 12 BC856BM NXP Semiconductors 60 V, 100 mA PNP general-purpose transistor 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Rth(j-a) thermal resistance from junction to ambient in free air [1] 103 Max Unit - - 500 K/W Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. 006aab603 0.5 102 Typ duty cycle = 1 Zth(j-a) (K/W) [1] Min 0.75 0.33 0.2 0.1 0.05 10 0.02 0.01 0 1 10- 5 10- 4 10- 3 10- 2 10- 1 1 10 102 tp (s) 103 FR4 PCB, standard footprint Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values BC856BM Product data sheet All information provided in this document is subject to legal disclaimers. 19 August 2015 © NXP Semiconductors N.V. 2015. All rights reserved 4 / 12 BC856BM NXP Semiconductors 60 V, 100 mA PNP general-purpose transistor 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit ICBO collector-base cut-off current VCB = -30 V; IE = 0 A; Tamb = 25 °C - - -15 nA VCB = -30 V; IE = 0 A; Tj = 150 °C - - -5 µA IEBO emitter-base cut-off current VEB = -5 V; IC = 0 A; Tamb = 25 °C - - -100 nA hFE DC current gain VCE = -5 V; IC = -2 mA; Tamb = 25 °C 220 - 475 VCEsat collector-emitter saturation voltage IC = -10 mA; IB = -0.5 mA; Tamb = 25 °C - - -200 mV IC = -100 mA; IB = -5 mA; pulsed; - - -400 mV - -700 - mV - -850 - mV VCE = -5 V; IC = -2 mA; Tamb = 25 °C -600 - -750 mV VCE = -5 V; IC = -10 mA; Tamb = 25 °C - - -820 mV VCB = -10 V; IE = 0 A; ie = 0 A; - - 2.5 pF - 4.5 - pF 100 - - MHz - - 10 dB tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C VBEsat VBE CC base-emitter saturation IC = -10 mA; IB = -0.5 mA; Tamb = 25 °C voltage IC = -100 mA; IB = -5 mA; Tamb = 25 °C base-emitter voltage collector capacitance f = 1 MHz; Tamb = 25 °C CE emitter capacitance VEB = -0.5 V; IC = 0 A; ic = 0 A; f = 1 MHz; Tamb = 25 °C fT transition frequency VCE = -5 V; IC = -10 mA; f = 100 MHz; Tamb = 25 °C NF noise figure VCE = -5 V; IC = -200 µA; RS = 2 kΩ; f = 1 kHz; B = 200 Hz; Tamb = 25 °C BC856BM Product data sheet All information provided in this document is subject to legal disclaimers. 19 August 2015 © NXP Semiconductors N.V. 2015. All rights reserved 5 / 12 BC856BM NXP Semiconductors 60 V, 100 mA PNP general-purpose transistor aaa-019159 600 hFE aaa-019160 -1.2 VBE (V) (1) 400 (1) -0.8 (2) (2) 200 0 -10-1 Fig. 3. (3) -0.4 (3) -1 -10 -102 IC (mA) 0 -10-1 -103 -1 -10 VCE = -5 V VCE = -5 V (1) Tamb = 150 °C (1) Tamb = -55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = −55 °C (3) Tamb = 150 °C DC current gain as a function of collector current; typical values Fig. 4. aaa-019161 -1.2 -102 IC (mA) -103 Base-emitter voltage as a function of collector current; typical values aaa-019162 -1 VBEsat (V) -1.0 VCEsat (V) (1) -0.8 (2) -10-1 (1) -0.6 (2) (3) (3) -0.4 -0.2 -10-1 Fig. 5. -1 -10 -102 IC (mA) -103 -10-2 -10-1 -1 -10 -102 IC (mA) -103 IC/IB = 20 IC/IB = 20 (1) Tamb = -55 °C (1) Tamb = 150 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = 150°C (3) Tamb = -55 °C Base-emitter saturation voltage as a function of Fig. 6. collector current; typical values Collector-emitter saturation voltage as a function of collector current; typical values BC856BM Product data sheet All information provided in this document is subject to legal disclaimers. 19 August 2015 © NXP Semiconductors N.V. 2015. All rights reserved 6 / 12 BC856BM NXP Semiconductors 60 V, 100 mA PNP general-purpose transistor 11. Test information 11.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. 12. Package outline 0.62 0.55 0.55 0.47 0.50 0.46 3 0.30 0.22 0.65 0.30 0.22 2 0.20 0.12 1 0.35 Dimensions in mm Fig. 7. 1.02 0.95 03-04-03 Package outline DFN1006-3 (SOT883) BC856BM Product data sheet All information provided in this document is subject to legal disclaimers. 19 August 2015 © NXP Semiconductors N.V. 2015. All rights reserved 7 / 12 BC856BM NXP Semiconductors 60 V, 100 mA PNP general-purpose transistor 13. Soldering 1.3 0.7 R0.05 (12×) solder lands 0.9 0.6 0.7 solder resist solder paste 0.25 (2×) occupied area 0.3 (2×) 0.3 0.4 (2×) 0.4 Dimensions in mm sot883_fr Fig. 8. Reflow soldering footprint for DFN1006-3 (SOT883) BC856BM Product data sheet All information provided in this document is subject to legal disclaimers. 19 August 2015 © NXP Semiconductors N.V. 2015. All rights reserved 8 / 12 BC856BM NXP Semiconductors 60 V, 100 mA PNP general-purpose transistor 14. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes BC856BM v.1 20150819 Product data sheet - - BC856BM Product data sheet All information provided in this document is subject to legal disclaimers. 19 August 2015 © NXP Semiconductors N.V. 2015. All rights reserved 9 / 12 BC856BM NXP Semiconductors 60 V, 100 mA PNP general-purpose transistor In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 15. Legal information 15.1 Data sheet status Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. 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Unless otherwise agreed in writing, the product is not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. All information provided in this document is subject to legal disclaimers. 19 August 2015 © NXP Semiconductors N.V. 2015. All rights reserved 10 / 12 BC856BM NXP Semiconductors 60 V, 100 mA PNP general-purpose transistor No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 15.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Bitsound, CoolFlux, CoReUse, DESFire, FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, MIFARE, MIFARE Plus, MIFARE Ultralight, SmartXA, STARplug, TOPFET, TrenchMOS, TriMedia and UCODE — are trademarks of NXP Semiconductors N.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. BC856BM Product data sheet All information provided in this document is subject to legal disclaimers. 19 August 2015 © NXP Semiconductors N.V. 2015. All rights reserved 11 / 12 BC856BM NXP Semiconductors 60 V, 100 mA PNP general-purpose transistor 16. Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 1 6 Ordering information ............................................. 2 7 Marking ................................................................... 2 8 Limiting values .......................................................3 9 Thermal characteristics .........................................4 10 Characteristics ....................................................... 5 11 11.1 Test information ..................................................... 7 Quality information ............................................... 7 12 Package outline ..................................................... 7 13 Soldering ................................................................ 8 14 Revision history ..................................................... 9 15 15.1 15.2 15.3 15.4 Legal information .................................................10 Data sheet status ............................................... 10 Definitions ...........................................................10 Disclaimers .........................................................10 Trademarks ........................................................ 11 © NXP Semiconductors N.V. 2015. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 19 August 2015 BC856BM Product data sheet All information provided in this document is subject to legal disclaimers. 19 August 2015 © NXP Semiconductors N.V. 2015. All rights reserved 12 / 12