CMOS linear image sensors S10121 to S10124 series (-01) Higher UV sensitivity than previous type, current-output type sensors with variable integration time function The S10121 to S10124 series are self-scanning photodiode arrays designed specifically as detectors for spectroscopy. The scanning circuit operates at low power consumption and is easy to handle. Each photodiode has a large photosensitive area with high sensitivity and smoothly varying spectral response characteristics in UV region. Features Applications High UV sensitivity Spectrophotometry High UV sensitivity than previous type Smoothly varying spectral response characteristics in UV region Variable integration time for each pixel Wide photosensitive area Pixel pitch: 50 μm, 25 μm Pixel height: 2.5 mm, 0.5 mm Large saturation output charge Structure Type no. Number of pixels S10121-128Q-01 S10121-256Q-01 S10121-512Q-01 S10122-128Q-01 S10122-256Q-01 S10122-512Q-01 S10123-256Q-01 S10123-512Q-01 S10123-1024Q-01 S10124-256Q-01 S10124-512Q-01 S10124-1024Q-01 128 256 512 128 256 512 256 512 1024 256 512 1024 Pixel pitch (μm) Pixel height (mm) Package Window material *1 *2 Weight (g) 3.0 2.5 3.5 50 3.0 0.5 Ceramic 0.5 Quartz (t=0.5 mm) 3.5 3.0 3.5 25 2.5 3.0 3.5 *1: Resin sealing *2: Refractive index=1.46 www.hamamatsu.com 1 CMOS linear image sensors S10121 to S10124 series (-01) Absolute maximum ratings Parameter Supply voltage Clock pulse voltage Start pulse voltage Integration time control pulse Overflow gate voltage Overflow drain voltage Operating temperature Storage temperature Symbol Vdd V(CLK) V(ST) V(INT) Vofg Vofd Topr Tstg Condition Ta=25 °C Ta=25 °C Ta=25 °C Ta=25 °C Ta=25 °C Ta=25 °C No dew condensation*3 No dew condensation*3 Value -0.3 to +6 -0.3 to +6 -0.3 to +6 -0.3 to +6 -0.3 to +6 -0.3 to +6 -5 to +65 -10 to +85 Unit V V V V V V °C °C *3: When there is a temperature difference between a product and the surrounding area in high humidity environment, dew condensation may occur on the product surface. Dew condensation on the product may cause deterioration in characteristics and reliability. Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. Recommended terminal voltage (Ta=25 °C) Parameter Symbol Vdd Supply voltage Clock pulse voltage Start pulse voltage Integration time control pulse voltage Overflow drain voltage Overflow gate voltage High level Low level High level Low level High level Low level V(CLK) V(ST) V(INT) Vofd Vofg Min. 4.75 Vdd - 0.25 0 Vdd - 0.25 0 Vdd - 0.25 0 0.5 0.17 Typ. 5 Vdd Vdd Vdd 2 0.2 Max. 5.25 Vdd + 0.25 0.4 Vdd + 0.25 0.4 Vdd + 0.25 0.4 2.5 0.23 Unit V V V V V V 2 CMOS linear image sensors S10121 to S10124 series (-01) Electrical characteristics [Ta=25 °C, Vdd=5 V, Vb=Vofd=2 V, Vofg=0.2 V] Clock pulse frequency Video data rate Power consumption*4 Video line capacitance (Vb=2 V)*5 Parameter S10121/S10124 series S10122/S10123 series Symbol f(CLK) VR S10121-128Q-01 S10121-256Q-01 S10121-512Q-01 S10122-128Q-01 S10122-256Q-01 S10122-512Q-01 S10123-256Q-01 S10123-512Q-01 S10123-1024Q-01 S10124-256Q-01 S10124-512Q-01 S10124-1024Q-01 S10121-128Q-01 S10122-128Q-01 S10121-256Q-01 S10122-256Q-01 S10121-512Q-01 S10122-512Q-01 S10123-256Q-01 S10124-256Q-01 S10123-512Q-01 S10124-512Q-01 S10123-1024Q-01 S10124-1024Q-01 P Min. 10 k 10 k - Typ. f(CLK) 0.75 1.75 4.25 1.5 3.5 8.25 3.25 7.25 18.25 1.75 3.75 8.25 Max. 250 k 500 k - - 10 - - 14 - - 22 - - 13 - - 19 - - 32 - Cv Unit Hz Hz mW pF *4: f(CLK)=250 kHz (S10121/S10124 series), 500 kHz (S10122/S10123 series) *5: Vb is the voltage at the non-inverting input terminal of the charge amplifier in the current-integration readout circuit. [See the readout circuit example (p.8).] Electrical and optical characteristics [Ta=25 °C, Vdd=5 V, Vb=Vofd=2 V, Vofg=0.2 V, f(CLK)=200 kHz] Parameter Spectral response range Peak sensitivity wavelength S10121 series S10122 series Dark current S10123 series S10124 series S10121 series S10122 series Saturation output charge S10123 series S10124 series Saturation exposure*6 Photo response non-uniformity*6 *7 *8 Symbol λ λp ID Qsat Esat PRNU Min. 110 22 11 55 - Typ. 200 to 1000 750 0.1 0.02 0.02 0.1 165 32 14 75 580 - Max. 0.6 0.12 0.12 0.6 ±3 Unit nm nm pA pC mlx · s % *6: Measured with a tungsten lamp of 2856 K *7: Photo response non-uniformity is defined under the condition that the device is uniformly illuminated by light which is 50 % of the saturation exposure level as follows: PRNU= ΔX/X × 100 (%) X: the average output of all pixels, ΔX: difference between X and maximum or minimum output. *8: Except for the first and last pixels 3 CMOS linear image sensors S10121 to S10124 series (-01) Spectral response (typical example) Spectral response in UV region (typical example) (Ta=25 °C) 0.4 (Ta=25 °C) 0.12 S10121 to S10124 series (-01) 0.3 Photosensitivity (A/W) Photosensitivity (A/W) 0.10 0.2 0.1 0.08 0.06 0.04 Previous type 0.02 0 200 400 600 800 1000 0 200 1200 220 240 260 KMPDB0442EA Photosensitivity variation in UV region (typical example) KMPDB0443EA Block diagram (Ta=25 °C) 0.12 Photosensitivity (A/W) 300 Wavelength (nm) Wavelength (nm) 0.10 280 CLK Typ. Product 1 Product 2 Product 3 ST Shift register EOS INT Address switch array 0.08 Active Video Dummy Video Vdd 0.06 GND Vofd Vofg 0.04 Photodiode array Overflow drain KMPDC0232EC 0.02 0 200 220 240 260 280 300 Wavelength (nm) KMPDB0444EA Photosensitivity in the UV region may slightly vary from product to product. 4 CMOS linear image sensors S10121 to S10124 series (-01) Equivalent circuit ST D Q D Q D Q D Q C Q C Q C Q C Q EOS CLK INT Active Video 1st pixel 2nd pixel Last pixel Dummy Video KMPDC0279EB 5 CMOS linear image sensors S10121 to S10124 series (-01) Output waveform of one pixel (S10124-1024Q-01) f(CLK)=250 kHz, Cf=15 pF, G=1 CLK 5 V/div. GND 4.7 V (Saturation output charge=70 pC) Video 1 V/div. 1 μs/div. GND f(CLK)=10 kHz, Cf=15 pF, G=1 CLK 5 V/div. GND 4.7 V (Saturation output charge=70 pC) Video 1 V/div. 20 μs/div. GND 6 CMOS linear image sensors S10121 to S10124 series (-01) Timing chart CLK tpi(ST), integration time ST INT Active Video (available term) Enlarged view Last pixel 1st 2nd 3rd 4th EOS tf(CLK) 1st 2nd 3rd 4th tr(CLK) CLK 1/f(CLK) tr(ST) ST t(ST-CLK) tf(ST) t(CLK-ST) t(INT-CLK) t(CLK-INT) INT should be "high" when not reading pixels. INT tr(INT) Active Video (available term) 1st 2nd tf(INT) 3rd 4th 5th Allow CLK pulse transition from “high” to “low” only one time while ST pulse is “high”. Integration time is determined by the interval between start pulses. Only the switching noise component is output from the Dummy Video line. Do not use the Dummy Video output during current-integration readout. The INT signal is not needed between EOS and the rising edge of the next ST signal. KMPDC0249ED Parameter S1012*-128Q-01 S1012*-256Q-01 Start pulse (ST) interval S1012*-512Q-01 S1012*-1024Q-01 INT pulse rise and fall times INT pulse - clock pulse timing Clock pulse - INT pulse timing Start pulse rise and fall times Clock pulse duty ratio Clock pulse rise and fall times Clock pulse - start pulse timing Start pulse - clock pulse timing Symbol tpi(ST) tr(INT), tf(INT) t(INT-CLK) t(CLK-INT) tf(ST), tr(ST) tf(CLK), tr(CLK) t(CLK-ST) T(ST-CLK) Min. 130/f(CLK) 258/f(CLK) 514/f(CLK) 1026/f(CLK) 0 30 30 0 40 0 20 20 Typ. 20 20 50 20 - Max. 30 1 / [2 × f(CLK)] 1 / [2 × f(CLK)] 30 60 30 - Unit s ns ns ns ns % ns ns ns 7 CMOS linear image sensors S10121 to S10124 series (-01) Current-integration readout circuit example and timing chart example Readout circuit example CLK ST MST INT PLD MCLK Reset Clamp Trigger SD210DE Reset S10121 to S10124 series CLK CLK ST ST INT INT Vofg Vofg Vofd Vofd Vdd EOS 22 kΩ 5V EOS 3.9 kΩ 1.5 kΩ 3 kΩ 3.3 kΩ 20 pF Data Video 0.22 μF Active Video OPA606 OPA606 GND OPA606 Clamp SD210DE 5V 0.1 μF &10 μF Vb (=Vofd)* * Supply the Vb terminal with the same voltage as Vofd. KMPDC0562EA Timing chart example MST MCLK ST CLK INT Reset Clamp Trigger Data Video EOS KMPDC0386EB 8 CMOS linear image sensors S10121 to S10124 series (-01) Variable integration time function By controlling the clock pulse to the INT terminal, the integration time for each pixel can be changed to any length that is an integer multiple of one readout period. When the clock pulse at the INT terminal is set to “high” at the pixel signal readout timing, then no signal is output from that pixel (see below). This allows the signal charge to continuously accumulate in that pixel as long as no signal is output. For example, when the integration time of one readout period is 100 ms and this function is used to output a signal from a pixel once every 3 readout periods, then the integration time of that pixel will be 300 ms. Using this function to lengthen the integration time of certain pixels makes it possible to effectively detect spectral signals of weak wavelength components. Timing chart (Concept view showing the settings to double, triple and quadruple the integration times at channels 2, 3 and 4, respectively, by using the variable integration time function on the basis of the integration time at channel 1.) CLK ST Readout timing 1 2 3 4 1 2 3 4 1 2 3 4 1 2 3 4 1 2 3 4 INT 1 ch integration time 2 ch integration time 3 ch integration time 4 ch integration time Output Invalid data Valid data KMPDC0233EC 9 CMOS linear image sensors S10121 to S10124 series (-01) Dimensional outlines (unit: mm) S10121-128Q-01, S10124-256Q-01 Photosensitive area 6.4 × 2.5 1.4 ± 0.2*2 10.4 ± 0.25 12 1 31.75 ± 0.3 11 5.2 ± 0.2 Index mark Photosensitive surface 0.5 ± 0.05*3 3.0 ± 0.3 Direction of scan 10.16 ± 0.25 22 1 ch 0.25 1.3 ± 0.2*1 3.2 ± 0.3 5.0 ± 0.5 0.51 ± 0.05 2.54 ± 0.13 25.4 ± 0.13 Angle accuracy of effective pixels: ±2° Lead treatment: Ni/Au plating Lead material: FeNi alloy *1: Distance from the upper surface of the quartz window to the photosensitive surface *2: Distance from the bottom of the package to the photosensitive surface *3: Window thickness KMPDA0060EG S10121-256Q-01, S10124-512Q-01 Photosensitive area 12.8 × 2.5 22 12 1 Index mark 11 31.75 ± 0.3 Photosensitive surface 0.5 ± 0.05*3 3.0 ± 0.3 Direction of scan 5.2 ± 0.2 10.4 ± 0.25 1 ch 10.16 ± 0.25 1.3 ± 0.2*1 6.4 ± 0.3 0.25 1.4 ± 0.2*2 5.0 ± 0.5 0.51 ± 0.05 2.54 ± 0.13 25.4 ± 0.13 Angle accuracy of effective pixels: ±2° Lead treatment: Ni/Au plating Lead material: FeNi alloy *1: Distance from the upper surface of the quartz window to the photosensitive surface *2: Distance from the bottom of the package to the photosensitive surface *3: Window thickness KMPDA0061EG 10 CMOS linear image sensors S10121 to S10124 series (-01) S10121-512Q-01, S10124-1024Q-01 Photosensitive area 25.6 × 2.5 1.4 ± 0.2*2 10.4 ± 0.25 12 11 5.2 ± 0.2 1 Index mark Photosensitive surface 40.6 ± 0.3 0.5 ± 0.05*3 3.0 ± 0.3 Direction of scan 10.16 ± 0.25 22 1 ch 0.25 1.3 ± 0.2*1 12.8 ± 0.3 5.0 ± 0.5 0.51 ± 0.05 2.54 ± 0.13 25.4 ± 0.13 Angle accuracy of effective pixels: ±2° Lead treatment: Ni/Au plating Lead material: FeNi alloy *1: Distance from the upper surface of the quartz window to the photosensitive surface *2: Distance from the bottom of the package to the photosensitive surface *3: Window thickness KMPDA0062EG S10122-128Q-01, S10123-256Q-01 Photosensitive area 6.4 × 0.5 22 12 Index mark 1 31.75 ± 0.3 Photosensitive surface 0.5 ± 0.05*3 3.0 ± 0.3 Direction of scan 11 5.2 ± 0.2 10.4 ± 0.25 1 ch 10.16 ± 0.25 1.3 ± 0.2*1 3.2 ± 0.3 0.25 1.4 ± 0.2*2 5.0 ± 0.5 0.51 ± 0.05 2.54 ± 0.13 25.4 ± 0.13 Angle accuracy of effective pixels: ±2° Lead treatment: Ni/Au plating Lead material: FeNi alloy *1: Distance from the upper surface of the quartz window to the photosensitive surface *2: Distance from the bottom of the package to the photosensitive surface *3: Window thickness KMPDA0215EG 11 CMOS linear image sensors S10121 to S10124 series (-01) S10122-256Q-01, S10123-512Q-01 Photosensitive area 12.8 × 0.5 1.4 ± 0.2*2 Photosensitive surface 1 11 31.75 ± 0.3 Index mark 0.5 ± 0.05*3 3.0 ± 0.3 Direction of scan 5.2 ± 0.2 10.4 ± 0.25 12 10.16 ± 0.25 22 1 ch 0.25 1.3 ± 0.2*1 6.4 ± 0.3 Angle accuracy of effective pixels: ±2° Lead treatment: Ni/Au plating Lead material: FeNi alloy *1: Distance from the upper surface of the quartz window to the photosensitive surface *2: Distance from the bottom of the package to the photosensitive surface *3: Window thickness 5.0 ± 0.5 0.51 ± 0.05 2.54 ± 0.13 25.4 ± 0.13 KMPDA0216EG S10122-512Q-01, S10123-1024Q-01 Photosensitive area 25.6 × 0.5 12 11 5.2 ± 0.2 1 Index mark 40.6 ± 0.3 0.5 ± 0.05*3 3.0 ± 0.3 Direction of scan Photosensitive surface 10.16 ± 0.25 22 0.25 1.3 ± 0.2*1 12.8 ± 0.3 10.4 ± 0.25 1 ch 1.4 ± 0.2*2 5.0 ± 0.5 0.51 ± 0.05 2.54 ± 0.13 25.4 ± 0.13 Angle accuracy of effective pixels: ±2° Lead treatment: Ni/Au plating Lead material: FeNi alloy *1: Distance from the upper surface of the quartz window to the photosensitive surface *2: Distance from the bottom of the package to the photosensitive surface *3: Window thickness KMPDA0217EG 12 CMOS linear image sensors S10121 to S10124 series (-01) Pin connections Index mark ST 1 22 CLK INT 2 21 NC Vofg 3 20 NC Vdd 4 19 NC GND 5 18 NC GND 6 17 NC Vdd 7 16 NC Vofd 8 15 NC Active Video 9 14 NC Dummy Video 10 13 NC GND 11 12 EOS KMPDC0230EC Pin no. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 Symbol ST INT Vofg Vdd GND GND Vdd Vofd Active Video Dummy Video GND EOS NC NC NC NC NC NC NC NC NC CLK Name of pin Start pulse Integration time control pulse Overflow gate voltage Supply voltage Ground Ground Supply voltage Overflow drain voltage Video output Dummy video output Ground End of scan I/O Input Input Input Input Input Input Input Input Output Output Input Output No connection Clock pulse Input Precautions during use (1) Electrostatic countermeasures This device has a built-in protection circuit against static electrical charges. However, to prevent destroying the device with electrostatic charges, take countermeasures such as grounding yourself, the workbench and tools to prevent static discharges. Also protect this device from surge voltages which might be caused by peripheral equipment. (2) Incident window If dust or dirt gets on the light incident window, it will show up as black blemishes on the image. When cleaning, avoid rubbing the window surface with dry cloth or dry cotton swab, since doing so may generate static electricity. Use soft cloth, paper or a cotton swab moistened with alcohol to wipe dust and dirt off the window surface. Then blow compressed air onto the window surface so that no spot or stain remains. (3) Soldering To prevent damaging the device during soldering, take precautions to prevent excessive soldering temperatures and times. Soldering should be performed within 5 seconds at a soldering temperature below 260 °C. (4) Operating and storage environments Always observe the rated temperature range when handling the device. Operating or storing the device at an excessively high temperature and humidity may cause variations in performance characteristics and must be avoided. (5) UV exposure This device is designed to suppress performance deterioration due to UV exposure. Even so, avoid unnecessary UV exposure to the device. Also, be careful not to allow UV light to strike the cemented portion of the glass. 13 CMOS linear image sensors S10121 to S10124 series (-01) Related information www.hamamatsu.com/sp/ssd/doc_en.html Precautions ∙ Disclaimer ∙ Image sensors Information described in this material is current as of October, 2015. Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater, N.J. 08807, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39) 02-93581733, Fax: (39) 02-93581741 China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Cat. No. KMPD1162E02 Oct. 2015 DN 14