CMOS linear image sensor S11638 Achieves high sensitivity by adding an amplifier to each pixel The S11638 is a CMOS linear image sensor that achieves high sensitivity by adding an amplifier to each pixel. It has a long photosensitive area (effective photosensitive area length: 28.672 mm) consisting of 2048 pixels, each with a pixel size of 14 × 42 μm. Compared to our previous product, the S11638 has high sensitivity in UV region. Features Applications Pixel size: 14 × 42 μm Spectrometers 2048 pixels Position detection Effective photosensitive area length: 28.672 mm Image reading High sensitivity: 160 V/(lx·s) Encoders Simultaneous charge integration for all pixels Barcode readers Variable integration time function (electronic shutter function) 5 V single power supply operation Built-in timing generator allows operation with only start and clock pulse inputs Video data rate: 10 MHz max. Small input terminal capacitance: 5 pF Structure Parameter Number of pixels Pixel size Photosensitive area length Package Window material Specification 2048 14 × 42 28.672 LCP (liquid crystal polymer) Quartz Unit μm mm - Absolute maximum ratings Parameter Supply voltage Clock pulse voltage Start pulse voltage Operating temperature*1 Storage temperature*1 Symbol Vdd V(CLK) V(ST) Topr Tstg Condition Ta=25 °C Ta=25 °C Ta=25 °C Value -0.3 to +6 -0.3 to +6 -0.3 to +6 -40 to +65 -40 to +65 Unit V V V °C °C *1: No condensation Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. www.hamamatsu.com 1 CMOS linear image sensor S11638 Recommended terminal voltage (Ta=25 °C) Parameter Symbol Vdd Supply voltage Clock pulse voltage Start pulse voltage High level Low level High level Low level V(CLK) V(ST) Min. 4.75 3 0 3 0 Typ. 5 Vdd Vdd - Max. 5.25 Vdd + 0.25 0.3 Vdd + 0.25 0.3 Unit V V V V V Typ. 5 5 Max. - Unit pF pF Max. 10 M 260 50 Unit Hz Hz Ω mA Input terminal capacitance (Ta=25 °C, Vdd=5 V) Parameter Symbol Clock pulse input terminal capacitance C(CLK) Start pulse input terminal capacitance C(ST) Min. - Electrical characteristics [Ta=25 °C, Vdd=5 V, V(CLK)=V(ST)=5 V] Parameter Clock pulse frequency Video data rate Output impedance Current consumption*2 *3 Symbol f(CLK) VR Zo I Min. 200 k 70 20 Typ. f(CLK) 30 *2: f(CLK)=10 MHz *3: Current consumption increases as the clock pulse frequency increases. The current consumption is 10 mA typ. at f(CLK)=200 kHz. Electrical and optical characteristics [Ta=25 °C, Vdd=5 V, V(CLK)=V(ST)=5 V, f(CLK)=10 MHz] Parameter Spectral response range Peak sensitivity wavelength Photosensitivity*4 Conversion efficiency*5 Dark output voltage*6 Saturation output voltage*7 Readout noise Dynamic range 1*8 Dynamic range 2*9 Output offset voltage Photoresponse nonuniformity*4 *10 Image lag*11 Symbol λ λp R CE Vd Vsat Nr DR1 DR2 Vo PRNU IL Min. 0 0.8 0.3 0.3 - Typ. 200 to 1000 700 160 13 0.4 1.2 0.6 2000 3000 0.5 ±2 - Max. 4 1.8 1.5 0.9 ±10 0.1 Unit nm nm V/(lx·s) μV/emV V mV rms times times V % % Measured with a tungsten lamp of 2856 K Output voltage generated per one electron Integration time Ts=10 ms Difference from Vo DR1= Vsat/Nr DR2= Vsat/Vd Integration time Ts=10 ms Dark output voltage is proportional to the integration time and so the shorter the integration time, the wider the dynamic range. *10: Photoresponse nonuniformity (PRNU) is the output nonuniformity that occurs when the entire photosensitive area is uniformly illuminated by light which is 50% of the saturation exposure level. PRNU is measured using 2042 pixels excluding 3 pixels each at both ends, and is defined as follows: PRNU= ΔX / X × 100 (%) X: average output of all pixels, ΔX: difference between X and maximum output or minimum output *11: Signal components of the preceding line data that still remain even after the data is read out in a saturation output state. Image lag increases when the output exceeds the saturation output voltage. *4: *5: *6: *7: *8: *9: 2 CMOS linear image sensor S11638 Spectral response (typical example) (Ta=25 °C) 100 Relative sensitivity (%) 80 60 40 20 0 200 400 600 800 1000 Wavelength (nm) KMPDB0354EA Block diagram Shift register Trig 23 CLK 3 ST 24 Timing generator 15 EOS Hold circuit 13 Video Amp array Bias generator Photodiode array 1 12 2 11 Vdd Vss KMPDC0398EA 3 CMOS linear image sensor S11638 Output waveform of one pixel The timing for acquiring the Video signal is synchronized with the rising edge of a trigger pulse (See red arrow below.). f(CLK)=VR=10 MHz CLK 5 V/div. GND Trig 5 V/div. GND 1.7 V (saturation output voltage=1.2 V) Video 0.5 V (output offset voltage) GND 1 V/div. 20 ns/div. f(CLK)=VR=1 MHz CLK 5 V/div. GND Trig 5 V/div. GND 1.7 V (saturation output voltage=1.2 V) Video 1 V/div. 0.5 V (output offset voltage) GND 200 ns/div. 4 CMOS linear image sensor S11638 Timing chart art (S11638) 1 2 3 4 5 1 2 3 4 51 52 53 87 88 89 CLK Integration time tlp(ST) ST thp(ST) tpi(ST) 87 clocks 2048 1 2048 Video 1 89 Trig EOS tr(CLK) tf(CLK) CLK 1/f(CLK) ST tr(ST) tf(ST) thp(ST) tlp(ST) tpi(ST) Parameter Start pulse width interval*12 Start pulse high period*12 *13 Start pulse low period Start pulse rise and fall times Clock pulse duty Clock pulse rise and fall times Symbol tpi(ST) thp(ST) tlp(ST) tr(ST), tf(ST) tr(CLK), tf(CLK) KMPDC0399EB Min. 98/f(CLK) 6/f(CLK) 92/f(CLK) 0 45 0 Typ. 10 50 10 Max. 30 55 30 Unit s s s ns % ns *12: Dark output increases if the start pulse period or the start pulse high period is lengthened. *13: The integration time equals the high period of ST plus 48 CLK cycles. The shift register starts operation at the rising edge of CLK immediately after ST goes low. The integration time can be changed by changing the ratio of the high and low periods of ST. If the first Trig pulse after ST goes low is counted as the first pulse, the Video signal is acquired at the rising edge of the 89th Trig pulse. 5 CMOS linear image sensor S11638 Operation example When the clock pulse frequency is maximized (video data rate is also maximized), the time of one scan is minimized, and the integration time is maximized (for outputting signals from all 2048 channels) Clock pulse frequency = Video data rate = 10 MHz Start pulse cycle = 2140/f(CLK) = 2140/10 MHz = 214 μs High period of start pulse = Start pulse cycle - Start pulse’s low period min. = 2140/f(CLK) - 92/f(CLK) = 2140/10 MHz - 92/10 MHz = 204.8 μs Integration time is equal to the high period of start pulse + 48 cycles of clock pulses, so it will be 204.8 + 4.8 = 209.6 μs. thp(ST)=204.8 µs tlp(ST)=9.2 µs ST tpi(ST)=214 µs KMPDC0366EB Dimensional outline (unit: mm) Photosensitive area 28.672 Photosensitive surface a 13 1 12 a’ 41.6 ± 0.2 0.5 ± 0.05*3 a-a’ cross section Direction of scan 3.0 0.51 10.2 ± 0.5 0.2 1 ch 2.54 4.0 ± 0.5 4.55 ± 0.4 Photosensitive area 0.042 9.1 ± 0.1 10.02 ± 0.3 24 1.4 ± 0.2*2 ±15° 14.336 ± 0.3 1.35 ± 0.2*1 Tolerance unless otherwise noted: ±0.1 *1: Distance from window upper surface to photosensitive surface *2: Distance from package bottom to photosensitive surface *3: Glass thickness ±15° 27.94 KMPDA0283EB 6 CMOS linear image sensor S11638 Pin connections Pin no. 1 2 3 4 5 6 7 8 9 10 Symbol Vdd Vss CLK NC NC NC NC NC NC NC 11 Vss 12 Vdd I/O I I I Description Supply voltage GND Clock pulse No connection No connection No connection No connection No connection No connection No connection Pin no. 13 14 15 16 17 18 19 20 21 22 Symbol Video NC EOS NC NC NC NC NC NC NC I/O O GND 23 Trig O Supply voltage 24 ST I O Description Video signal No connection End of scan No connection No connection No connection No connection No connection No connection No connection Trigger pulse for video signal acquisition Start pulse Note: Leave the “NC” terminals open and do not connect them to GND. Connect a buffer amplifier for impedance conversion to the video output terminal so as to minimize the current flow. As the buffer amplifier, use a high input impedance operational amplifier with JFET or CMOS input. Application circuit example +5 V 0.1 µF +5 V + +5 V 22 µF/25 V 0.1 µF 0.1 µF + 22 µF/25 V + 22 µF/25 V ST CLK 82 Ω 74HC541 +5 V 22 µF/25 V + 1 Vdd ST 24 2 Vss Trig 23 3 CLK NC 22 4 NC NC 21 5 NC NC 20 6 NC NC 19 7 NC NC 18 8 NC NC 17 9 NC NC 16 10 NC EOS 15 11 Vss NC 14 12 Vdd Video 13 82 Ω Trig EOS 74HC541 +5 V 0.1 µF + 22 µF/25 V 100 Ω S11638 + - LT1818 51 Ω Video 22 pF 0.1 µF 0.1 µF 22 µF/25 V + -5 V KMPDC0400EA 7 CMOS linear image sensor S11638 Precautions (1) Electrostatic countermeasures This device has a built-in protection circuit against static electrical charges. However, to prevent destroying the device with electrostatic charges, take countermeasures such as grounding yourself, the workbench and tools to prevent static discharges. Also protect this device from surge voltages which might be caused by peripheral equipment. (2) Light input window If dust or dirt gets on the light input window, it will show up as black blemishes on the image. When cleaning, avoid rubbing the window surface with dry cloth or dry cotton swab, since doing so may generate static electricity. Use soft cloth, paper or a cotton swab moistened with alcohol to wipe dust and dirt off the window surface. Then blow compressed air onto the window surface so that no spot or stain remains. (3) Soldering To prevent damaging the device during soldering, take precautions to prevent excessive soldering temperatures and times. Soldering should be performed within 5 seconds at a soldering temperature below 260 °C. (4) Operating and storage environments Always observe the rated temperature range when handling the device. Operating or storing the device at an excessively high temperature and humidity may cause variations in performance characteristics and must be avoided. (5) UV exposure This device is designed to suppress performance deterioration due to UV exposure. Even so, avoid unnecessary UV exposure to the device. Also, be careful not to allow UV light to strike the cemented portion of the glass. Related information www.hamamatsu.com/sp/ssd/doc_en.html Precautions ∙ Notice ∙ Image sensors/Precautions Information described in this material is current as of November, 2013. Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or a suffix "(Z)" which means developmental specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Thorshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 China: Hamamatsu Photonics (China) Co., Ltd.: 1201 Tower B, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Cat. No. KMPD1130E04 Nov. 2013 DN 8