CMOS linear image sensor S12706 High sensitivity, photosensitive area with minute pixels The S12706 is a high sensitivity CMOS linear image sensor using a photosensitive area with minute pixels. It has a long photosensitive area (effective photosensitive length: 28.672 mm) consisting of 4096 pixels, each with a pixel size of 7 × 7 μm. Features Applications Pixel size: 7 × 7 μm Position detection 4096 pixels Image reading Effective photosensitive area length: 28.672 mm Encoders High sensitivity: 23 V/(lx·s) Simultaneous charge integration for all pixels Variable integration time function (electronic shutter function) 5 V single power supply operation Built-in timing generator allows operation with only start and clock pulse inputs. Video data rate: 10 MHz max. Structure Parameter Number of pixels Pixel size Photosensitive area length Package Window material Specification 4096 7×7 28.672 LCP (liquid crystal polymer) Borosilicate glass (Tempax) Unit μm mm - Absolute maximum ratings Parameter Supply voltage Clock pulse voltage Start pulse voltage Operating temperature*1 Storage temperature*1 Symbol Vdd V(CLK) V(ST) Topr Tstg Condition Ta=25 °C Ta=25 °C Ta=25 °C Value -0.3 to +6 -0.3 to +6 -0.3 to +6 -40 to +85 -40 to +85 Unit V V V °C °C Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. *1: No condensation www.hamamatsu.com 1 CMOS linear image sensor S12706 Recommended terminal voltage (Ta=25 °C) Parameter Symbol Vdd Supply voltage Clock pulse voltage Start pulse voltage High level Low level High level Low level V(CLK) V(ST) Min. 4.75 3 0 3 0 Typ. 5 Vdd Vdd - Max. 5.25 Vdd + 0.25 0.3 Vdd + 0.25 0.3 Unit V V V V V Typ. 5 5 Max. - Unit pF pF Max. 10 M 260 60 Unit Hz Hz mA Input terminal capacitance (Ta=25 °C, Vdd=5 V) Parameter Clock pulse input terminal capacitance Start pulse input terminal capacitance Symbol C(CLK) C(ST) Min. - Electrical characteristics [Ta=25 °C, Vdd=5 V, V(CLK)=V(ST)=5 V] Parameter Clock pulse frequency Video data rate Output impedance Current consumption*2 *3 Symbol f(CLK) VR Zo I Min. 200 k 70 20 Typ. 5M f(CLK) 40 *2: f(CLK)=10 MHz *3: Current consumption increases as the clock pulse frequency increases. The current consumption is 10 mA typ. at f(CLK)=200 kHz. Electrical and optical characteristics [Ta=25 °C, Vdd=5 V, V(CLK)=V(ST)=5 V, f(CLK)=10 MHz] Parameter Spectral response range Peak sensitivity wavelength Photosensitivity*4 Conversion efficiency*5 Dark output voltage*6 Saturation output voltage*7 Readout noise Dynamic range 1*8 Dynamic range 2*9 Output offset voltage Photoresponse nonuniformity*4 *10 Image lag*11 Symbol p R CE Vd Vsat Nr DR1 DR2 Vo PRNU IL Min. 0 1.5 0.5 0.3 - Typ. 400 to 1000 600 23 25 0.2 2.0 1.0 2000 10000 0.5 ±2 - Max. 2 2.5 1.8 0.9 ±10 0.1 Unit nm nm V/(lx·s) μV/emV V mV rms times times V % % Measured with a tungsten lamp of 2856 K Output voltage generated per one electron Integration time=10 ms Diference from Vo DR1 = Vsat/Nr DR2 = Vsat/Vd Integration time=10 ms Dark output voltage is proportional to the integration time and so the shorter the integration time, the wider the dynamic range. *10: Photoresponse nonuniformity (PRNU) is the output nonuniformity that occurs when the entire photosensitive area is uniformly illuminated by light which is 50% of the saturation exposure level. PRNU is measured using 4090 pixels excluding 3 pixels each at both ends, and is defined as follows: PRNU = X/X × 100 (%) X: average output of all pixels, X: difference between X and maximum output or minimum output *11: Signal components of the preceding line data that still remain even after the data is read out in a saturation output state. Image lag increases when the output exceeds the saturation output voltage. *4: *5: *6: *7: *8: *9: 2 CMOS linear image sensor S12706 Spectral response (typical example) (Ta=25 °C) 100 Relative sensitivity (%) 80 60 40 20 0 400 500 600 700 800 900 1000 Wavelength (nm) KMPDB0397EA Block diagram Shift register Trig 23 CLK 3 ST 24 Timing generator 15 EOS Hold circuit 13 Video Amp array Bias generator Photodiode array 1 12 2 11 Vdd Vss KMPDC0398EA 3 CMOS linear image sensor S12706 Output waveforms of one pixel The timing for acquiring the Video signal is synchronized with the rising edge of Trig pulse (See red arrow below.). f(CLK)=VR=10 MHz CLK 5 V/div. GND Trig 5 V/div. GND 2.5 V (saturation output voltage=2.0 V) Video 0.5 V (output offset voltage) 1 V/div. GND 20 ns/div. f(CLK)=VR=1 MHz CLK 5 V/div. GND Trig 5 V/div. GND 2.5 V (saturation output voltage=2.0 V) Video 0.5 V (output offset voltage) 1 V/div. GND 200 ns/div. 4 CMOS linear image sensor S12706 Timing chart 1 2 3 4 5 1 2 3 4 51 52 53 87 88 89 CLK Integration time tlp(ST) ST thp(ST) tpi(ST) 87 clocks 4096 1 4096 Video 1 89 Trig EOS tr(CLK) tf(CLK) CLK 1/f(CLK) ST tr(ST) tf(ST) thp(ST) tlp(ST) tpi(ST) KMPDC0480EA Parameter Start pulse cycle*12 Start pulse high period*12 *13 Start pulse low period Start pulse rise and fall times Clock pulse duty ratio Clock pulse rise and fall times Symbol tpi(ST) thp(ST) tlp(ST) tr(ST), tf(ST) tr(CLK), tf(CLK) Min. 98/f(CLK) 6/f(CLK) 92/f(CLK) 0 45 0 Typ. 10 50 10 Max. 30 55 30 Unit s s s ns % ns *12: Dark output increases if the start pulse cycle or the start pulse high period is lengthened. *13: The integration time equals the high period of ST plus 48 CLK cycles. The shift register starts operation at the rising edge of CLK immediately after ST goes low. The integration time can be changed by changing the ratio of the high and low periods of ST. If the first Trig pulse after ST goes low is counted as the first pulse, the Video signal is acquired at the rising edge of the 89th Trig pulse. 5 CMOS linear image sensor S12706 Operation example This example assumes that the clock pulse frequency is maximized (video data rate is also maximized), the time of one scan is minimized, and the integration time is maximized Clock pulse frequency = Video data rate = 10 MHz Start pulse cycle = 4188/f(CLK) = 4188/10 MHz = 418.8 μs High period of start pulse = Start pulse cycle - Start pulse’s low period min. = 4188/f(CLK) - 92/f(CLK) = 4188/10 MHz - 92/10 MHz = 409.6 μs Integration time is equal to the high period of start pulse + 48 cycles of clock pulses, so it will be 409.6 + 4.8 = 414.4 μs. thp(ST)=409.6 µs tlp(ST)=9.2 µs ST tpi(ST)=418.8 µs KMPDC0481EA Dimensional outline (unit: mm) Photosensitive area 28.672 Photosensitive surface A 13 1 12 A’ 10.2 ± 0.5 0.2 1 ch 0.5 ± 0.05*3 41.6 ± 0.2 A-A’ cross section Direction of scan 2.54 3.0 Photosensitive area 0.007 4.0 ± 0.5 4.55 ± 0.4 9.1 ± 0.1 10.02 ± 0.3 24 1.4 ± 0.2*2 ±15° 14.336 ± 0.3 1.35 ± 0.2*1 0.51 ±15° Tolerance unless otherwise noted: ±0.1 *1: Distance from window upper surface to photosensitive surface *2: Distance from package bottom to photosensitive surface *3: Glass thickness 27.94 KMPDA0309EA 6 CMOS linear image sensor S12706 Pin connections Pin no. 1 2 3 4 5 6 7 8 9 10 Symbol Vdd Vss CLK NC NC NC NC NC NC NC I/O I I - 11 Vss - 12 Vdd I Description Supply voltage GND Clock pulse No connection No connection No connection No connection No connection No connection No connection Pin no. 13 14 15 16 17 18 19 20 21 22 Symbol Video NC EOS NC NC NC NC NC NC NC I/O O O - GND 23 Trig O Supply voltage 24 ST I Description Video signal No connection End of scan No connection No connection No connection No connection No connection No connection No connection Trigger pulse for video signal acqusition Start pulse Note: Leave the “NC” terminals open and do not connect them to GND. Connect a buffer amplifier for impedance conversion to the video output terminal so as to minimize the current flow. As the buffer amplifier, use a high input impedance operational amplifier with JFET or CMOS input. Application circuit example +5 V 0.1 µF +5 V + +5 V 22 µF/25 V 0.1 µF 0.1 µF + 22 µF/25 V + 22 µF/25 V ST CLK 82 Ω 74HC541 +5 V 22 µF/25 V + 1 Vdd ST 24 2 Vss Trig 23 3 CLK NC 22 4 NC NC 21 5 NC NC 20 6 NC NC 19 7 NC NC 18 8 NC NC 17 9 NC NC 16 10 NC EOS 15 11 Vss NC 14 12 Vdd Video 13 82 Ω Trig EOS 74HC541 +5 V 0.1 µF + 22 µF/25 V 100 Ω S12706 + - LT1818 51 Ω Video 22 pF 0.1 µF 0.1 µF 22 µF/25 V + -5 V KMPDC0482EA 7 CMOS linear image sensor S12706 Precautions (1) Electrostatic countermeasures This device has a built-in protection circuit against static electrical charges. However, to prevent destroying the device with electrostatic charges, take countermeasures such as grounding yourself, the workbench and tools. Also protect this device from surge voltages which might be caused by peripheral equipment. (2) Light input window If dust or dirt gets on the light input window, it will show up as black blemishes on the image. When cleaning, avoid rubbing the window surface with dry cloth or dry cotton swab, since doing so may generate static electricity. Use soft cloth, paper or a cotton swab moistened with alcohol to wipe dust and dirt off the window surface. Then blow compressed air onto the window surface so that no spot or stain remains. (3) Soldering To prevent damaging the device during soldering, take precautions to prevent excessive soldering temperatures and times. Soldering should be performed within 5 seconds at a soldering temperature below 260 °C. (4) Operating and storage environments Always observe the rated temperature range when handling the device. Operating or storing the device at an excessively high temperature and humidity may cause variations in performance characteristics and must be avoided. (5) UV light irradiation This device is not designed to prevent deterioration of characteristics caused by UV exposure, so do not expose it to UV light. Related information www.hamamatsu.com/sp/ssd/doc_en.html Precautions ∙ Notice ∙ Image sensor / Precautions Information described in this material is current as of January, 2014. Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or a suffix "(Z)" which means developmental specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater, N.J. 08807, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39) 02-93581733, Fax: (39) 02-93581741 China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Cat. No. KMPD1146E01 Jan. 2014 DN 8