CMOS linear image sensors S11105 series High-speed video data rate: 50 MHz The S11105 series is a CMOS linear image sensor that delivers a video data rate of 50 MHz. Two package styles are provided: a DIP type and a surface mount type. Features Applications Video data rate: 50 MHz max. Position detection Pixel size: 12.5 × 250 μm Image reading 512 pixels Simultaneous charge integration for all pixels Variable integration time function (electronic shutter function) Single 5 V power supply operation Built-in timing generator allows operation with only start and clock pulse inputs Two package styles are provided: DIP (dual inline package) type: S11105 Surface mount type: S11105-01 Structure Parameter Number of pixels Pixel size Photosensitive area length Package Window material Specification 512 12.5 × 250 6.4 Ceramic Borosilicate glass (Tempax) Unit μm mm - Absolute maximum ratings Parameter Supply voltage Clock pulse voltage Start pulse voltage Operating temperature*1 Storage temperature*1 Reflow soldering condition*2 *3 Symbol Vdd V(CLK) V(ST) Topr Tstg Tsol Condition Ta=25 °C Ta=25 °C Ta=25 °C Value -0.3 to +6 -0.3 to +6 -0.3 to +6 -30 to +60 -40 to +85 Peak temperature 240 °C, 2 times (See page 9) Unit V V V °C °C - *1: No condensation *2: S11105-01 *3: JEDEC level 5 Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. www.hamamatsu.com 1 CMOS linear image sensors S11105 series Recommended terminal voltage (Ta=25 °C) Parameter Symbol Vdd Supply voltage Clock pulse voltage Start pulse voltage High level Low level High level Low level V(CLK) V(ST) Min. 4.75 3 0 3 0 Typ. 5 Vdd Vdd - Max. 5.25 Vdd + 0.25 0.3 Vdd + 0.25 0.3 Unit V V V V V Typ. 5 5 Max. - Unit pF pF Max. 50 M 260 140 Unit Hz Hz Ω mA Input terminal capacitance (Ta=25 °C, Vdd=5 V) Parameter Symbol Clock pulse input terminal capacitance C(CLK) Start pulse input terminal capacitance C(ST) Min. - Electrical characteristics [Ta=25 °C, Vdd=5 V, V(CLK)=V(ST)=5 V] Parameter Clock pulse frequency Video data rate Output impedance Consumption current*2 *3 Symbol f(CLK) VR Zo I Min. 1M 70 60 Typ. f(CLK) 90 *2: f(CLK)=50 MHz *3: Consumption current increases as the clock pulse frequency increases. The consumption current is 70 mA typ. at f(CLK)=1 MHz. Electrical and optical characteristics [Ta=25 °C, Vdd=5 V, V(CLK)=V(ST)=5 V, f(CLK)=50 MHz] Parameter Spectral response range Peak sensitivity wavelength Photosensitivity*4 Conversion efficiency*5 Dark output voltage*6 Saturation output voltage*7 Readout noise Dynamic range 1*8 Dynamic range 2*9 Output offset voltage Photoresponse nonuniformity*4 *10 Symbol λ λp R CE Vd Vsat Nr DR1 DR2 Vo PRNU Min. 0 0.7 0.5 0.6 - Typ. 400 to 1000 680 40 0.6 1.0 1.3 2.5 520 1300 1.2 ±8 Max. 3.5 1.9 4.5 1.8 ±15 Unit nm nm V/(lx·s) μV/emV V mV rms times times V % Measured with a tungsten lamp of 2856 K Output voltage generated per one electron Integration time Ts=10 ms Difference from Vo DR1= Vsat/Nr DR2= Vsat/Vd Integration time Ts=10 ms Dark output voltage is proportional to the integration time and so the shorter the integration time, the wider the dynamic range. *10: Photoresponse nonuniformity (PRNU) is the output nonuniformity that occurs when the entire photosensitive area is uniformly illuminated by light which is 50% of the saturation exposure level. PRNU is measured using 506 pixels excluding 3 pixels each at both ends, and is defined as follows: PRNU= ΔX/X × 100 (%) X: average output of all pixels, ΔX: difference between X and maximum output or minimum output *4: *5: *6: *7: *8: *9: 2 CMOS linear image sensors S11105 series Spectral response (typical example) (Ta=25 °C) 100 Relative sensitivity (%) 80 60 40 20 0 400 600 800 1000 Wavelength (nm) KMPDB0309EC Block diagram Shift register Trig CLK ST Timing generator EOS Hold circuit Video Charge amp array Photodiode array Bias generator KMPDC00479EA 3 CMOS linear image sensors S11105 series Output waveform of one pixel The timing for acquiring the video signal is synchronized with the falling edge of a trigger pulse. f(CLK)=VR=50 MHz CLK 5 V/div. GND Trig 5 V/div. GND 2.5 V (saturation output voltage=1.3 V) Video 1.2 V (output offset voltage) 1 V/div. GND 5 ns/div. f(CLK)=VR=1 MHz CLK 5 V/div. GND Trig 5 V/div. GND 2.7 V (saturation output voltage=1.3 V) Video 1.4 V (output offset voltage) 1 V/div. GND 200 ns/div. 4 CMOS linear image sensors S11105 series Timing chart 1 2 3 17 18 19 46 47 48 49 50 51 CLK Integration time tlp(ST) ST thp(ST) tpi(ST) 512 1 512 Video Trig EOS tr(CLK) tf(CLK) CLK 1/f(CLK) ST tr(ST) tf(ST) thp(ST) tlp(ST) tpi(ST) KMPDC0322EC Parameter Start pulse width interval Start pulse high period*11 Start pulse low period Start pulse rise and fall times Clock pulse duty Clock pulse rise and fall times Symbol tpi(ST) thp(ST) tlp(ST) tr(ST), tf(ST) tr(CLK), tf(CLK) Min. 58/f(CLK) 6/f(CLK) 52/f(CLK) 0 45 0 Typ. 5 50 5 Max. 100 m 7 55 7 Unit s s s ns % ns *11: The integration time equals the high period of ST. The shift register starts operation at the rising edge of CLK immediately after ST goes low. The integration time can be changed by changing the ratio of the high and low periods of ST. If the first Trig pulse after ST goes low is counted as the first pulse, the Video signal of the first channel is acquired at the falling edge of the 49th Trig pulse. 5 CMOS linear image sensors S11105 series Operation example For outputting signals from all 512 channels When the clock pulse frequency is maximized (video data rate is also maximized), the time of one scan is minimized, and the integration time is maximized (for outputting signals from all 512 channels). Clock pulse frequency = Video data rate = 50 MHz Start pulse cycle = 564/f(CLK) = 564/50 MHz = 11.28 μs High period of start pulse = Start pulse cycle - Start pulse’s low period min. = 564/f(CLK) - 52/f(CLK) = 564/50 MHz - 52/50 MHz = 10.24 μs Integration time is equal to the high period of start pulse, so it will be 10.24 μs. tlp(ST)=1.04 µs thp(ST)=10.24 µs ST tpi(ST)=11.28 µs (line rate 88.65 kHz) KMPDC0407EA For outputting signals from 1 to 32 channels When the clock pulse frequency is maximized (video data rate is also maximized), and the integration time is maximized (for stopping signals at channel 32). Clock pulse frequency = Video data rate = 50 MHz Start pulse cycle = 84/f(CLK) = 84/50 MHz = 1.68 μs High period of start pulse = Start pulse cycle - Start pulse’s low period min. = 84/f(CLK) - 52/f(CLK) = 84/50 MHz - 52/50 MHz = 0.64 μs Integration time is equal to the high period of start pulse, so it will be 0.64 μs. tlp(ST)=1.04 µs thp(ST)=0.64 µs ST tpi(ST)=1.68 µs (line rate 595 kHz) KMPDC0408EA 6 CMOS linear image sensors S11105 series Dimensional outline (unit: mm, unless otherwise noted: ±0.1) S11105 12 a’ 11 Photosensitive surface 0.25 a 1.4 ± 0.2*2 1 1 ch 5.2 ± 0.2 10.2 ± 0.25 22 2.8 ± 0.3 10.4 ± 0.25 Photosensitive area 3.6 ± 0.3 6.4 × 0.25 0.125 ± 0.2 1.3 ± 0.2*1 31.75 ± 0.3 0.5 ± 0.05*3 a-a’ cross section 5.0 ± 0.5 3.0 ± 0.3 Direction of scan 0.51 ± 0.05 2.54 ± 0.13 Tolerance unless otherwise noted: ±0.1 *1: Distance from window upper surface to photosensitive surface *2: Distance from package bottom to photosensitive surface *3: Glass thickness 25.4 ± 0.13 KMPDA0248ED S11105-01 2.8 ± 0.2 Photosensitive surface a (16 ×) 0.6 0.9 ± 0.2*2 9 9 16 9.0 ± 0.2 4.5 ± 0.2 0.125 ± 0.2 1 ch 16 1.1 ± 0.2*1 1 a’ 8 12.5 ± 0.2 Direction of scan (4 ×) R0.2 8 1 0.5 ± 0.05*3 a-a’ cross section (16 ×) 1.0 3.6 ± 0.2 Photosensitive area 6.4 × 0.25 1.27 Index mark 8.89 Tolerance unless otherwise noted: ±0.1 *1: Distance from window upper surface to photosensitive surface *2: Distance from package bottom to photosensitive surface *3: Glass thickness KMPDA0249ED 7 CMOS linear image sensors S11105 series Pin connections S11105 Pin no. 1 2 3 4 5 6 Symbol NC ST CLK Vss Vdd NC I/O 7 Trig O 8 9 10 11 Vdd Video EOS Vss I O O I I I Description No connection Start pulse Clock pulse GND Supply voltage No connection Trigger pulse for video signal acquisition Supply voltage Video signal End of scan GND Pin no. 12 13 14 15 16 17 Symbol NC NC NC NC NC NC I/O 18 NC No connection 19 20 21 22 NC NC Vdd NC No connection No connection Supply voltage No connection No No No No No No I Description connection connection connection connection connection connection S11105-01 Pin no. 1 2 3 4 5 6 Symbol Vss Vdd Vss NC NC NC I/O 7 Trig O 8 Vdd I I Description GND Supply voltage GND No connection No connection No connection Trigger pulse for video signal acquisition Supply voltage Pin no. 9 10 11 12 13 14 Symbol Video EOS Vss NC NC Vdd I/O O O I Description Video signal End of scan GND No connection No connection Supply voltage 15 ST I Start pulse 16 CLK I Clock pulse Precautions (1) Electrostatic countermeasures This device has a built-in protection circuit against static electrical charges. However, to prevent destroying the device with electrostatic charges, take countermeasures such as grounding yourself, the workbench and tools to prevent static discharges. Also protect this device from surge voltages which might be caused by peripheral equipment. (2) Light input window If the incident window is contaminated or scratched, the output uniformity will deteriorate considerably, so care should be taken in handling the window. Avoid touching it with bare hands. The window surface should be cleaned before using the device. If dry cloth or dry cotton swab is used to rub the window surface, static electricity may be generated, and therefore this practice should be avoided. Use soft cloth, cotton swab or soft paper moistened with ethyl alcohol to wipe off dirt and foreign matter on the window surface. (3) Soldering To prevent damaging the device during soldering, take precautions to prevent excessive soldering temperatures and times. Soldering should be performed within 5 seconds at a soldering temperature below 260 °C. (4) Reflow soldering (S11105-01) Soldering conditions may differ depending on the board size, reflow furnace, etc. Check the conditions before soldering. A sudden temperature rise and cooling may be the cause of trouble, so make sure that the temperature change is within 4 °C per second. The bonding portion between the ceramic base and the glass may discolor after reflow soldering, but this has no adverse effects on the hermetic sealing of the product. (5) Operating and storage environments Handle the device within the temperature range specified in the absolute maximum ratings. Operating or storing the device at an excessively high temperature and humidity may cause variations in performance characteristics and must be avoided. (6) UV exposure This product is not designed to prevent deterioration of characteristics caused by UV exposure, so do not expose it to UV light. 8 CMOS linear image sensors S11105 series Recommended solder reflow condition (S11105-01) 300 Peak temperature 240 °C max. Temperature (°C) 250 200 150 100 50 0 0 50 100 150 200 250 300 Time (s) KAPDB0169EA Related information www.hamamatsu.com/sp/ssd/doc_en.html Precautions ∙ Notice ∙ Image sensors/Precautions ∙ Surface mount type products/Precautions Information described in this material is current as of November, 2013. Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or a suffix "(Z)" which means developmental specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Thorshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 China: Hamamatsu Photonics (China) Co., Ltd.: 1201 Tower B, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Cat. No. KMPD1111E05 Nov. 2013 DN 9