BT-CCD camera C8000-30 FEATURES High-sensitivity imaging from UV to nearinfrared wavelengths - UV: Quantum efficiency over 60 % (at 200 nm) - Near-infrared: Quantum efficiency over 90 % (at 650 nm) Quantum efficiency in UV source (reference data) (This is typical value) F2 ArF KrF Fourth harmonic generation of a YAG laser i line Wavelength (nm) 157 193 248 266 365 Quantum efficiency (%) (typ.) 84 57 69 50 47 Light source light irradiation may cause a drop in sensitivity and increase the dark current of the * UV CCD sensor. Real time background subtraction Recursive filter (2, 4, 8, 16, 32 and 64 frames selectable) The C8000-30 employs an ultrahigh-sensitivity back-thinned CCD sensor made by Hamamatsu, which offers extremely high quantum efficiency in a wide range of UV, VIS and NIR wavelengths. The high UV sensitivity from 120 nm is useful for semiconductor mask inspection and measurement applications. Also, the high NIR sensitivity is useful for fluorescence measurement, NIR LD measurement and so on. PRINCIPLE In a normal CCD with front-illuminated CCD structure, the light sensitive pixels have a charge transfer function as well, and this function requires the front surface of light sensitive pixels to be covered by a semi-transparent Poly-Si electrode for the charge transfer function. The Poly-Si electrode absorbs some percentage of incoming photons depending on their wavelength. Especially of of the UV light is not able to reach the light sensitive pixels. To overcome this disadvantage, in a back-thinned CCD, the CCD is turned upside down and this back side of the CCD is thinned to 10-15 μm in thickness. Incident photons now enter the CCD from the back-thinned side, without the Poly-Si electrode in the light path. Then QE values of greater than 90 % can be achieved. SPECTRAL RESPONSE Quantum efficiency (%) 100 80 60 40 Normal CCD Back-Thinned CCD (Front-Illuminated CCD) Light Light sensitive pixels 20 Gate electrodes Light e- 0 200 400 600 800 1000 Light sensitive pixels 1200 Wavelength (nm) e- * Without sapphire window. With the sapphire window, the spectral response is decreased due to the transmittance characteristics of the window. Gate electrodes SYSTEM CONFIGURATION C8000-30 Lens Computer frame grabber board Power cable 5 m A9071-05 Microscope HAMAMATSU CAMERA ADAPTER A13206-01 Software Computer POWER Video camera microscope attachment Camera adapter A13206-01 Standard Options OPTIONS SYSTEM SPECIFICATIONS Imaging device Back-thinned frame transfer CCD Effective number of pixels 640 (H) 14 μm (H) Cell size Effective area 8.96 mm (H) binning 480 (V) 14 μm (V) 6.72 mm (V) 31.4 frames/s 1 1 Frame rate • Camera adapter : A13206-01 • Power cable 5 m : A9071-05 C8000-30 Type number 2 2 58.3 frames/s 4 4 101.8 frames/s Readout noise (rms) (typ.) 150 electrons Full well capacity (typ.) 30 000 electrons Cooling method Passive air-cooled Cooling temperature + 5 ˚C (room temperature + 20 ˚C) A/D converter 12 bit Exposure time 30.8 ms to 1 s Analog gain Approx. 1 to 5 times (16 steps) Sub-array 8 pixels increments (V) External trigger mode Edge trigger, Level trigger, Start trigger, Synchronous readout trigger Image processing functions Background subtraction, Recursive filter Lens mount C-mount Interface CameraLink Base Configuration External control CameraLink Power requirements DC +12 V Power consumption Approx. 10 VA Ambient operating temperature 0 ˚C to + 40 ˚C Performance guaranteed temperature 0 ˚C to + 30 ˚C Ambient storage temperature - 10 ˚C to + 50 ˚C Ambient operating humidity 70 % max. (with no condensation) Ambient storage humidity 90 % max. (with no condensation) DIMENSIONAL OUTLINES (Unit: mm) Camera head (Approx. 1.3 kg) Camera adapter A13206-01 (Approx. 0.8 kg) (Option) 1-32UN C-mount 82±1 3.3±2 140±1 2.36±0.5 BT-CCD CAMERA 150 HAMAMATSU C8000 CAMERA ADAPTER 160 A13206-01 8±0.5 82±1 41±0.5 60 POWER 67.7±1 4-M3 d=8 32±0.3 18±0.3 1/4-20UNC d=8 ★ Product and software package names noted in this documentation are trademarks or registered trademarks of their respective manufacturers. ● ● Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult your local sales representative. Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications and external appearance are subject to change without notice. © 2015 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Systems Division 812 Joko-cho, Higashi-ku, Hamamatsu City, 431-3196, Japan, Telephone: (81)53-431-0124, Fax: (81)53-435-1574, E-mail: [email protected] U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater, N.J 08807, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218 E-mail: [email protected] Germany: Hamamatsu Photonics Deutschland GmbH.: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-265-8 E-mail: [email protected] France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10 E-mail: [email protected] United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court,10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, UK, Telephone: (44)1707-294888, Fax: (44)1707-325777 E-mail: [email protected] North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01 E-mail: [email protected] Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6 20020 Arese (Milano), Italy, Telephone: (39)02-93581733, Fax: (39)02-93581741 E-mail: [email protected] China: Hamamatsu Photonics (China) Co., Ltd.: B1201 Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86)10-6586-6006, Fax: (86)10-6586-2866 E-mail: [email protected] Cat. No. SCAS0009E03 APR/2015 HPK Created in Japan