SKM 300GB128D Absolute Maximum Ratings Symbol Conditions IGBT % %67 9 ;" 13 SEMITRANSTM 3 SPT IGBT Module SKM 300GB128D )- 12*3 . / <6&%<= > Typical Applications & ' ( ' )* +, Units /)** 45* 1)#-3 8** : )* 8* ??? @ /-* 1/)-3 & & . 8*** )#* 1/2*3 8** & & /2** & )#* 1/2*3 8** & & /2** & &" / ? %A %A67 )- 12*3 . / %A7 /* B ?B ; /-* . Freewheeling diode %A %A67 )- 12*3 . / %A7 /* B ?B ; /-* . Characteristics Symbol Conditions IGBT !" # $ % Values Inverse diode SKM 300GAL128D Features )- ." ' 913 % 1<3 9 " % 2 & 9 *" " ; )- 13 . ; )- 13 . 9 /- " ; )- 1/)-3 . 13 % )** &" 9 /- " E ' ' 9 *" )- " / 7, 6F@F ?" )- 1/)-3 . '1 3 '13 #** " % )** & 69 69 - D" ; /)- . 9 : /- )- ." ' min. 8"- typ. max. Units -"*") / 1*"C3 8"- 1#3 #"*"# /"/- 1/"*-3 # 15"-3 & D /"C 1)"/3 )"4- 1)"--3 )* A A A /5 ) /"C 13 *"4- 1*"-3 D /5* -##* #* )) 1))3 G Inverse diode A 1<3 %667 H %A )** &B 9 * B ; )- 1/)-3 . ; )- 1/)-3 . ; )- 1/)-3 . %A )** &B ; /)- 1 3 . 'I' #4** &IJ 9 * ) 1/"23 )"- /"/ 8")2* 44 /") #"- D & J // G FWD A 1<3 %667 H %A )** &B 9 * " ; )- 1/)-3 . ; )- 1/)-3 . ; )- 1/)-3 . %A )** &B ; )- 1/)- 3 . 'I' * &IJ 9 ) 1/"23 /"/ 8")2* 44 )"/") #"- // D & J G Thermal characteristics 61;3 61;3N 61;3AN %9K % N' AMN *"*2*"/2 *"/2 LIM LIM LIM 613 ' *"*42 LIM - = = 4)- Mechanical data GB GAL 7 7 + 7# 7# 1 14-09-2005 RAA 4 )"- © by SEMIKRON SKM 300GB128D Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic 2 14-09-2005 RAA © by SEMIKRON SKM 300GB128D Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 9 Transient thermal impedance of IGBT Fig. 10 Transient thermal impedance of FWD Zthp(j-c) = f (tp); D = tp/tc = tp*f Zthp(j-c) = f (tp); D = tp/tc = tp*f Fig. 11 CAL diode forward characteristic Fig. 12 Typ. CAL diode peak reverse recovery current 3 14-09-2005 RAA © by SEMIKRON SKM 300GB128D Fig. 13 Typ. CAL diode recovered charge UL Recognized File no. E 63 532 Dimensions in mm N-# 9K N-5 9&E N -# This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. 4 14-09-2005 RAA © by SEMIKRON