SKM 75GD123D Absolute Maximum Ratings Symbol Conditions IGBT *6 %* %*; <6 -> - SEMITRANSTM 3 Trench IGBT Modules SKM 75GD123DL SKM 75GD123D SKM 75GDL123D Features ! " # $ % & ' ( ) ' * % " +*, + , - . /0 Typical Applications +* " - ' 1* ' - 2 34 97 5* 2 / -?6;1-% @ - Units /377 :4 47 /77 = 37 & A7 BBB C /47 /34 1 1 5* 3477 :4 47 /77 1 1 447 1 1* / B %( %(; - 2 34 97 5* 2 / %( 2 /7 D BD -> 2 /47 5* Characteristics Symbol Conditions IGBT <6 %*6 *6- *6 <6 2 *6 %* 2 3 1 <6 2 7 *6 2 *6 -> 2 34 /34 5* -> 2 34 /34 5* <6 2 /4 -> 2 34 /34 5* *6 %* 2 47 1 <6 2 /4 * * * *6 ' <6 2 7 *6 2 34 ' 2 / !F ;**GC66G B & -2 34 /34 5* '' ' ** 2 #77 %* 2 47 1 ;< 2 ;<'' 2 33 E -> 2 /34 5* <6 2 = /4 - 2 34 5* ' min. A4 typ. max. Units 44 7A /A /# 33 07 #4 /3 /# /9 39 09 1 E 34 0/ 0 0: 00 74 733 A0 7# 70 #7 ( ( ( ! E AA 4# 097 :7 6 6'' /77 /77 477 /77 9 4 H Inverse diode ( 2 6* - %;; I %( 2 47 1D <6 2 7 D -> 2 34 /34 5* -> 2 34 /34 5* -> 2 34 /34 5* %( 2 47 1D -> 2 34 /34 5* J 2 977 1JK 6 <6 2 3 /9 // /9 30 04 30 : 34 /3 33 E 1 K* H Thermal characteristics ;>& ;>&+ %<, % + 703 7# LJM LJM ;& 774 LJM 4 /:4 Mechanical data N 4 1 Values Inverse diode GD - 2 34 5* ' A GDL 26-09-2005 RAA © by SEMIKRON SKM 75GD123D Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic 2 26-09-2005 RAA © by SEMIKRON SKM 75GD123D Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 9 Transient thermal impedance of IGBT Fig. 10 Transient thermal impedance of FWD Zthp(j-c) = f (tp); D = tp/tc = tp*f Zthp(j-c) = f (tp); D = tp/tc = tp*f Fig. 11 CAL diode forward characteristic Fig. 12 Typ. CAL diode peak reverse recovery current 3 26-09-2005 RAA © by SEMIKRON SKM 75GD123D Fig. 13 Typ. CAL diode recovered charge UL Recognized File no. E 63 532 Dimensions in mm * + #: <+ * + :0 <+ * + 4# This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. 4 26-09-2005 RAA © by SEMIKRON