s12379 kmpd1149e

CCD linear image sensor
S12379
Pixel size: 8 × 8 μm, 4-port readout,
front-illuminated CCD with high-speed
response and high sensitivity
The S12379 is a high-speed line rate, front-illuminated CCD linear image sensor designed for machine vision cameras.
Features
Application
Pixel size: 8 × 8 μm
Machine vision
2048 pixels
High-speed image readout
High-speed multiport readout
(Readout speed: 40 MHz max. × 4 ports)
High CCD node sensitivity: 21 μV/e- typ.
Anti-blooming function
Structure
Parameter
Image size (H × V)
Pixel size (H × V)
Total number of pixels
Number of effective pixels
Fill factor
Horizontal clock
Output circuit
Package
Window material
Specification
16.384 × 0.008
8×8
2104
2048
100
2-phase
3-stage MOSFET source follower
24-pin ceramic DIP
Quartz glass*1
Unit
mm
μm
%
-
*1: Resin sealing
Absolute maximum ratings (Ta=25 °C, unless otherwise noted)
Parameter
Operating temperature
Storage temperature
Output transistor drain voltage
Reset drain voltage
Anti-blooming drain voltage
Anti-blooming gate voltage
Storage gate voltage
Transfer gate voltage
Reset gate voltage
Output gate voltage
Horizontal shift register clock voltage
Symbol
Topr
Tstg
VOD1, 2, 3, 4
VRD
VABD
VABG
VSTG
VTG
VRG12, VRG34
VOG
VP1H, VP2H
Condition
Package temperature,
no condensation
No condensation
Value
Unit
-50 to +70
°C
-50 to +70
-0.5 to +20
-0.5 to +18
-0.5 to +18
-0.5 to +15
-0.5 to +15
-0.5 to +15
-0.5 to +15
-0.5 to +15
-0.5 to +15
°C
V
V
V
V
V
V
V
V
V
Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the
product within the absolute maximum ratings.
The sensor temperature will increase during high-speed operation. Take heat dissipation measures as required to prevent
exceeding the absolute maximum ratings.
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1
CCD linear image sensor
S12379
Operating conditions (Ta=25 °C)
Parameter
Output transistor drain voltage
Reset drain voltage
Anti-blooming drain voltage
Anti-blooming gate voltage
Storage gate voltage
Transfer gate voltage
Reset gate voltage
Horizontal shift register clock voltage
High
Low
High
Low
High
Low
Output gate voltage
Substrate voltage
External load resistance
Symbol
VOD1, 2, 3, 4
VRD
VABD
VABG
VSTG
VTGH
VTGL
VRG12H, VRG34H
VRG12L, VRG34L
VP1HH, VP2HH
VP1HL, VP2HL
VOG
VSS
RL
Min.
13
12
12
0
0
8
0
7
0
5.5
0
6
2.0
Typ.
15
13
13
0
0
10
0
8
0
6
0
7
0
2.2
Max.
17
14
14
5
5
12
3
9
1
6.5
1
8
2.4
Unit
V
V
V
V
V
V
V
V
V
V
kΩ
Electrical characteristics (Ta=25 °C, operating conditions: Typ., unless otherwise noted)
Parameter
Output signal frequency/port
Line rate
Reset clock frequency
Horizontal shift register capacitance
Transfer gate capacitance
Reset gate capacitance
Charge transfer efficiency*2
DC output level*3
Output impedance*3
Power consumption/port*3 *4
Symbol
fc
LR
frg
CP1H, CP2H
CTG
CRG12, CRG34
CTE
Vout
Zo
P
Min.
0.99995
8
-
Typ.
20
36
20
180
110
20
0.99999
9
135
100
Max.
40
72
40
10
200
140
Unit
MHz
kHz
MHz
pF
pF
pF
V
Ω
mW
*2: Transfer efficiency per CCD shift register pixel measured at half the saturation output
*3: Varies depending on the load resistance (VOD=15 V, load resistance=2.2 kΩ)
*4: Power consumption of the on-chip amp and load resistance
Electrical and optical characteristics (Ta=25 °C, operating conditions: Typ., unless otherwise noted)
Parameter
Saturation output voltage
Saturation charge*5
CCD node sensitivity
Average of all effective
pixels
6
Dark current*
Maximum among all
effective pixels
Readout noise*7
Dynamic range*8
Spectral response range
Photoresponse nonuniformity*9 *10
Image lag*9 *11
Symbol
Vsat
Fw
Sv
Min.
15
19
Typ.
Fw × Sv
20
21
Max.
23
DSave
-
30
100
Unit
V
keμV/ee-/ms
DSmax
-
40
100
Nr
DR
λ
PRNU
L
600
-
20
1000
200 to 1000
±3
0.1
30
±10
1
e- rms
nm
%
%
Saturation charge is within linearity ± 2%.
Dark current is halved when cooled by 5 to 7 °C.
Readout frequency 40 MHz
Dynamic range = saturation charge/readout noise
Measured at half the saturation output using an LED light (peak emission wavelength: 470 nm)
Fixed pattern noise (peak to peak)
*10: Photoresponse nonuniformity =
× 100 [%]
Signal
*5:
*6:
*7:
*8:
*9:
*11: Percentage of unread signal level when a light pulse is directed so that the output is half the saturation output
2
CCD linear image sensor
S12379
Spectral response (without window)
Spectral transmittance of window material
40
60
30
40
20
Photosensitivity
20
10
80
Transmittance (%)
Quantum efficiency (%)
Quantum efficiency
80
(Typ. Ta=25 °C)
100
50
Photosensitivity [V/(µJ ∙ cm2)]
(Typ. Ta=25 °C)
100
60
40
20
0
200
0
0
200 300 400 500 600 700 800 900 1000 1100
300
400
500
600
700
800
900
1000
Wavelength (nm)
Wavelength (nm)
KMPDB0303EA
* Spectral response will degrade depending on the
transmittance of the quartz glass.
KMPDB0414EB
Device structure (schematic of CCD chip as viewed from top of dimensional outline)
P2H P1H
SS
OS3
SS
OS2
OD2
OD3
D1 D2 D3 D4
D4 D3 D2 D1
TG
D5 D6
ABD
RG12
D13 D14 S1
S2
S511 S512 S512 S511
S2 S1 D14 D12
D6 D5
S512 S512 S511
S1 D14 D13
D5
STG
RG34
Photodiode
D5 D6
ABG
D14 S1
S2
D1 D2 D3 D4
D4 D3 D2 D1
OD1
OD4
OS1
SS
OS4
SS
P2H P1H
RD
OG
: light shielding region
KMPDC0504EB
3
CCD linear image sensor
S12379
Timing chart
Output period of one line (integration time)
Tovr3
Tovr1
Tovr2
Tpwt
Tpft
Tprt
TG
P1H
P2H
RG12, RG34
OS
Detail
TG
1 Tpwh 2
3
4
5...522 523
524
525
526
P1H
Tprh
Tpfh
P2H
Tprr
Tpwr
Tpfr
RG12, RG34
OS
D1
D2
D3
D4
S509 S510 S511 S512
D5...D14, S1...S508
KMPDC0505EB
TG
P1H, P2H *12
RG12, RG34
TG-P1H
Parameter
Pulse width
Rise and fall times
Pulse width
Rise and fall times
Duty ratio
Pulse width
Rise and fall times
Overlap time
Symbol
Tpwt
Tprt, Tpft
Tpwh
Tprh, Tpfh
Tpwr
Tprr, Tpfr
Tovr1
Tovr2
Tovr3
Min.
400
10
12.5
6
40
5
2
100
100
100
Typ.
600
25
50
6
200
200
200
Max.
60
-
Unit
ns
ns
ns
ns
%
ns
ns
ns
ns
ns
*12: Symmetrical clock pulses should be overlapped at 50% of maximum pulse amplitude.
4
CCD linear image sensor
S12379
Dimensional outline (unit: mm)
2 ± 0.15
1
12
A’
Photosensitive
surface
0.6 ± 0.05*3
3.45 ± 0.35
0.46 ± 0.05
27.94 ± 0.3
3.035 ± 0.3
2.54 ± 0.13
1.27 ± 0.25
18 ± 0.3
Index mark
4 ± 0.5
12.45 ± 0.25
13
6.225 ± 0.2
24
1.85 ± 0.2*2
12.7 ± 0.25
A
0.25 -0.03
1.2 ± 0.2*1
Photosensitive area
16.384 × 0.008
+0.05
[A-A’ cross section]
36 ± 0.36
Lead material: FeNi alloy
Lead processing: Ni/Au plating
Tolerance unless otherwise noted: ±0.1
*1: Distance from package top
to photosensitive area
*2: Distance from package bottom
to photosensitive area
*3: Glass thickness
Note: This product is not hermetically sealed, and therefore moisture may permeate into the package. Storing
or using the product in a place with sudden temperature or humidity changes may cause condensation to
form inside the package, so avoid such locations.
KMPDA0319EA
Pin connections
Pin no.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
Symbol
SS
OS1
OD1
RD
ABG
P2H
P1H
RG12
OG
OD4
OS4
SS
SS
OS3
OD3
STG
RG34
P1H
P2H
TG
ABD
OD2
OS2
SS
Function
Substrate
Output transistor source 1
Output transistor drain 1
Reset drain
Anti-blooming gate
Horizontal shift register clock 2
Horizontal shift register clock 1
Reset gate 1, 2
Output gate
Output transistor drain 4
Output transistor source 4
Substrate
Substrate
Output transistor source 3
Output transistor drain 3
Storage gate
Reset gate 3, 4
Horizontal shift register clock 1
Horizontal shift register clock 2
Transfer gate
Anti-blooming drain
Output transistor drain
Output transistor source 2
Substrate
Remark (standard operation)
0V
RL=2.2 kΩ (OS1-SS)
+15 V
+13 V
0V
+6/0 V
+6/0 V
+8/0 V
+7 V
+15 V
RL=2.2 kΩ (OS4-SS)
0V
0V
RL=2.2 kΩ (OS3-SS)
+15 V
0V
+8/0 V
+6/0 V
+6/0 V
+10/0 V
+13 V
+15 V
RL=2.2 kΩ (OS2-SS)
0V
5
CCD linear image sensor
S12379
Related information
www.hamamatsu.com/sp/ssd/doc_en.html
Precautions
· Disclaimer
· Image sensors
Information described in this material is current as of February 2015.
Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the
information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always
contact us for the delivery specification sheet to check the latest specifications.
The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that
one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use.
Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission.
www.hamamatsu.com
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater, N.J. 08807, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39) 02-93581733, Fax: (39) 02-93581741
China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866
Cat. No. KMPD1149E01 Feb. 2015 DN
6