CCD linear image sensor S11151-2048 High sensitivity in the ultraviolet region, front-illuminated CCD Despite a front-illuminated CCD, the S11151-2048 offers high sensitivity in the ultraviolet region (200 nm) nearly equal to back-thinned CCD. Features Applications High sensitivity in the ultraviolet region (spectral response range: 200 to 1000 nm) Image lag: 0.1% typ. Spectrometers Low dark current Low cost Structure Parameter Pixel size (H × V) Number of total pixels Number of effective pixels Image size (H × V) Horizontal clock phase Output circuit Package Window material Specification 14 × 200 μm 2056 2048 28.672 × 0.200 mm 2-phase Two-stage MOSFET source follower 24-pin ceramic DIP (refer to dimensional outline) Quartz glass*1 *1: Resin sealing Absolute maximum ratings (Ta=25 °C, unless otherwise noted) Parameter Operating temperature*2 *3 Storage temperature*3 Output transistor drain voltage Reset drain voltage Vertical input source voltage Horizontal input source voltage Test point Vertical input gate voltage Horizontal input gate voltage Summing gate voltage Output gate voltage Reset gate voltage Transfer gate voltage Horizontal shift register clock voltage Symbol Topr Tstg VOD VRD VISV VISH VIGV VIGH VSG VOG VRG VTG VP1H, VP2H Min. -50 -50 -0.5 -0.5 -0.5 -0.5 -10 -10 -10 -10 -10 -10 -10 Typ. - Max. +55 +70 +25 +18 +18 +18 +15 +15 +15 +15 +15 +15 +15 Unit °C °C V V V V V V V V V V V Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. *2: Package temperature *3: No condensation www.hamamatsu.com 1 CCD linear image sensor S11151-2048 Operating conditions (Ta=25 °C) Parameter Output transistor drain voltage Reset drain voltage Vertical input source voltage Horizontal input source voltage Test point Vertical input gate voltage Horizontal input gate voltage High Summing gate voltage Low Output gate voltage Substrate voltage High Reset gate voltage Low High Transfer gate voltage Low High Horizontal shift register clock voltage Low External load resistance Symbol VOD VRD VISV VISH VIGV VIGH VSGH VSGL VOG VSS VRGH VRGL VTGH VTGL VP1HH, VP2HH VP1HL, VP2HL RL Min. 12 10.5 -5 -5 4 -5 2 4 -5 7 -5 4 -5 2.0 Typ. 13 11 VRD VRD -4 -4 5 -4 3 0 5 -4 8 -4 5 -4 2.2 Max. 14 11.5 6 -3 4 6 -3 9 -3 6 -3 2.4 Unit V V V V V V V V V V V V kΩ Electrical characteristics (Ta=25 °C, unless otherwise noted, operating conditions: Typ.) Parameter Signal output frequency*4 Line rate Horizontal shift register capacitance Summing gate capacitance Reset gate capacitance Transfer gate capacitance Charge transfer efficiency*5 DC output level*4 Output impedance*4 Power consumption*4 *6 Symbol fc LR CP1H, CP2H CSG CRG CTG CTE Vout Zo P Min. 0.99995 - Typ. 1 0.48 220 10 10 110 0.99999 8.5 220 65 Max. 5 2.37 - Unit MHz kHz pF pF pF pF V Ω mW *4: The value depends on the load resistance. *5: Charge transfer efficiency per pixel of CCD shift register, measured at half of the full well capacity *6: Power consumption of the on-chip amplifier plus load resistance Electrical and optical characteristics (Ta=25 °C, unless otherwise noted, operating conditions: Typ.) Parameter Saturation output voltage Full well capacity CCD node sensitivity Symbol Vsat Fw Sv Average of all effective pixels DSave Maximum of all effective pixels DSmax Dark current*7 Min. 150 5 3000 - Typ. Fw × Sv 200 6 700 4 3500 20 25 8000 200 to 1000 ±3 0.1 Max. 7 3500 20 17500 100 50 ±10 1 Readout noise*8 Nr DR Dynamic range*9 Spectral response range λ Photoresponse nonuniformity*10 *11 PRNU Image lag*10 L *7: Dark current is reduced to half for every 5 to 7 °C decrease in temperature. *8: Readout frequency 1 MHz *9: Dynamic range = Full well capacity / Readout noise *10: Measured at one-half of the saturation output (full well capacity) using LED light (peak emission wavelength: 660 nm) *11: Photoresponse nonuniformity = Fixed pattern noise (peak to peak) Signal Unit V keμV/ee-/pixel/s pA/cm2 e-/pixel/s pA/cm2 e- rms nm % % × 100 [%] 2 CCD linear image sensor S11151-2048 Spectral transmittance characteristics of window material Spectral response (without window, typical example)*12 (Ta=25 °C) 100 (Typ. Ta=25 °C) 100 90 Quantum efficiency (%) 80 80 Transmittance (%) 70 60 50 40 30 60 40 20 20 10 0 200 300 400 500 600 700 800 900 1000 1100 0 100 200 300 400 500 600 700 800 900 1000 1100 Wavelength (nm) Wavelength (nm) KMPDB0303EA KMPDB0372EA *12: Spectral response with quartz glass is decreased according to the spectral transmittance characteristic of window material. Device structure (conceptual drawing of top view) 22 21 20 19 18 17 16 S2039 S2040 S2041 S2042 S2043 S2044 S2045 S2046 S2047 S2048 23 Photodiode S1 S2 S3 S4 S5 S6 S7 S8 S9 S10 24 CCD horizontal shift register D1 D2 D3 D4 D5 D6 D7 D8 15 14 13 1 2 3 4 5 6 7 8 9 10 11 12 Light-shielded section KMPDC0341EB 3 CCD linear image sensor S11151-2048 Timing chart 1 line period (integration time) Tpwv Tovr TG Tpwh, Tpws 1 P1H 2 3...2055 2056 P2H SG Tpwr RG OS D1 D2 D7 D3, D4, S1...S2048, D5, D6 Normal readout period D8 Dummy readout period* * When making the integration time longer than the normal readout period, to carry away the dark current generated in the CCD horizontal shift register, perform dummy readout after completion of the normal readout until right before rising transfer gate pulse. KMPDC0342EC TG P1H, P2H*13 SG RG TG-P1H Parameter Pulse width Rise and fall times Pulse width Rise and fall times Duty ratio Pulse width Rise and fall times Duty ratio Pulse width Rise and fall times Overlap time Symbol Tpwv Tprv, Tpfv Tpwh Tprh, Tpfh Tpws Tprs, Tpfs Tpwr Tprr, Tpfr Tovr Min. 6 20 100 10 40 100 10 40 10 5 1 Typ. 8 500 50 500 50 100 2 Max. 60 60 - Unit μs ns ns ns % ns ns % ns ns μs *13: Symmetrical clock pulses should be overlapped at 50% of maximum pulse amplitude. 4 CCD linear image sensor S11151-2048 Dimensional outline (unit: mm, tolerance unless otherwise noted: ±0.1) 0.5 ± 0.05*3 13 10.03 ± 0.25 24 Photosensitive surface 1 10.16 ± 0.25 Photosensitive area 28.672 × 0.200 0.25 -0.03 1.65 ± 0.2*2 +0.05 1.115 ± 0.1*1 41.6 ± 0.42 12 2.54 ± 0.13 0.5 ± 0.05 27.94 ± 0.3 3.0 ± 0.2 Index mark 3.0 ± 0.03 Index mark *1: Length from upper surface of window to photosensitive surface *2: Length from bottom surface of package to photosensitive surface *3: Window thickness Note: This product is not hermetically sealed and moisture may penetrate inside the package. Avoid using or storing this product in an environment where sudden temperature and humidity changes may occur and cause condensation in the package. KMPDA0261EC Pin connections Pin no. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 Symbol OS OD OG SG SS RD P2H P1H IGH IGV ISV ISH SS RD TG RG Function Output transistor source Output transistor drain Output gate Summing gate Substrate Reset drain Remark (standard operation) RL=2.2 kΩ +13 V +3 V Same pulse as P2H GND +11 V CCD horizontal register clock-2 CCD horizontal register clock-1 +5/-4 V +5/-4 V Test Test Test Test -4 V -4 V Connect it to RD. Connect it to RD. point point point point (horizontal input gate) (vertical input gate) (vertical input source) (horizontal input source) Substrate Reset drain GND +11 V Transfer gate Reset gate +8/-4 V +5/-4 V 5 CCD linear image sensor S11151-2048 Related information www.hamamatsu.com/sp/ssd/doc_en.html Precautions ∙ Notice ∙ Image sensors/Precautions Information described in this material is current as of November, 2012. Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or a suffix "(Z)" which means developmental specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Thorshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 China: Hamamatsu Photonics (China) Co., Ltd.: 1201 Tower B, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Cat. No. KMPD1119E04 Nov. 2012 DN 6