MPPC® (Multi-Pixel Photon Counter) S13360 series MPPCs for precision measurement MPPC is a type of device called SiPM (silicon photomultipliers). It is a new type of photon counting device that consists of multiple Geiger mode APD (avalanche photodiode) pixels. It is an opto-semiconductor with outstanding photon counting capability and low operating voltage and is immune to the effects of magnetic fields. The S13360 series are MPPCs for precision measurement. The MPPCs inherits the superb low afterpulse characteristics of previous products and further provide lower crosstalk and lower dark count. They are suitable for precision measurement, such as flow cytometry, DNA sequencer, laser microscope, and fluorescence measurement, that requires low noise characteristics. Features Applications Reduced crosstalk and dark count (compared to previous products) Fluorescence measurement Outstanding photon counting capability (outstanding photon detection efficiency versus numbers of incident photons) Flow cytometry Laser microscopes Compact DNA sequencers Environmental analysis Operates at room temperature Low voltage (VBR=53 V typ.) operation Various academic research High gain: 105 to 106 Excellent time resolution Immune to the effects of magnetic fields Operates with simple readout circuit MPPC module also available (sold separately) Lower noise When an MPPC detects photons, the output may contain spurious pulses, namely afterpulse and crosstalk, that are separate from the output pulses of the incident photons. Afterpulses are output later than the timing at which the incident light is received. Crosstalk is output from other pixels at the same time as the detection of light. Previous products achieved lower afterpulse through the improvement of material and wafer process technology, but with the S13360 series, low crosstalk has been achieved in addition to low afterpulse. Pulse waveform comparison (typical example) Previous product Improved product (reference data: S13360-3050CS series) (M=1.25 × 106) 50 mV 50 mV (M=1.25 × 106) 10 ns 10 ns www.hamamatsu.com 1 MPPC (Multi-Pixel Photon Counter) S13360 series Selection guide Type no. Pixel pitch (μm) S13360-1325CS S13360-1325PE S13360-3025CS S13360-3025PE 25 S13360-6025CS S13360-6025PE S13360-1350CS S13360-1350PE S13360-3050CS S13360-3050PE 50 S13360-6050CS S13360-6050PE S13360-1375CS S13360-1375PE S13360-3075CS S13360-3075PE 75 S13360-6075CS S13360-6075PE Effective photosensitive area (mm) Number of pixels 1.3 × 1.3 2668 3.0 × 3.0 14400 6.0 × 6.0 57600 1.3 × 1.3 667 3.0 × 3.0 3600 6.0 × 6.0 14400 1.3 × 1.3 285 3.0 × 3.0 1600 6.0 × 6.0 6400 Fill factor (%) Package Ceramic Surface mount type Ceramic 47 Surface mount type Ceramic Surface mount type Ceramic Surface mount type Ceramic 74 Surface mount type Ceramic Surface mount type Ceramic Surface mount type Ceramic 82 Surface mount type Ceramic Surface mount type Structure / Absolute maximum ratings Type no. (package) S13360-****CS (ceramic) S13360-****PE (surface mount type) Window material Refractive index of window material Silicone resin 1.41 Absolute maximum ratings Operating Storage temperature*1 temperature*1 Topr Tstg (°C) (°C) -20 to +60 Epoxy resin 1.55 -20 to +80 Soldering conditions Reflow soldering conditions*2 Tsol 350 °C or less, once, within 3 seconds*3 - - Peak temperature: 240 °C, twice (see P.11) *1: No condensation *2: JEDEC level 5a *3: Separate by at least 1 mm from the lead root. Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. 2 MPPC (Multi-Pixel Photon Counter) S13360 series Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted) Dark count*5 Type no. Photon Spectral Peak detection Measure- response sensitivity efficiency range wavelength ment PDE*4 λp λ conditions λ=λp S13360-1325CS (nm) 270 to 900 S13360-1325PE 320 to 900 S13360-3025CS S13360-3025PE Vover =5 V S13360-6025PE 320 to 900 S13360-1350CS 270 to 900 S13360-1350PE 320 to 900 S13360-3050PE 270 to 900 320 to 900 S13360-6050CS 270 to 900 S13360-6050PE 320 to 900 S13360-1375CS 270 to 900 S13360-1375PE 320 to 900 S13360-3075CS S13360-3075PE Vover =3 V 25 320 to 900 270 to 900 Vover =3 V (%) 270 to 900 S13360-6025CS S13360-3050CS (nm) 450 40 270 to 900 50 320 to 900 S13360-6075CS 270 to 900 S13360-6075PE 320 to 900 Terminal capacitance Ct Typ. Max. (kcps) (kcps) (pF) 70 210 60 400 1200 320 1600 5000 1280 90 270 60 500 1500 320 2000 6000 1280 90 270 60 500 1500 320 2000 6000 1280 Breakdown voltage VBR Gain M (V) 7.0 × 105 1.7 × 106 53 ± 5 4.0 × 106 Temperature Recomcoefficient mended Crosstalk at recomoperating probability mended voltage operating Vop voltage ΔTVop (%) (V) (mV/°C) 1 VBR + 5 3 VBR + 3 7 VBR + 3 54 *4: Photon detection efficiency does not include crosstalk or afterpulses. *5: Threshold=0.5 p.e. Note: The above characteristics were measured at the operating voltage that yields the listed gain. (See the data attached to each product.) Connection example +V 1 kΩ 0.1 μF MPPC Signal Amplifier KAPDC0024EB 3 MPPC (Multi-Pixel Photon Counter) S13360 series Photon detection efficiency vs. wavelength (typical example) Pixel pitch: 25 μm Pixel pitch: 50 μm (Typ. Ta=25 °C) 50 (Typ. Ta=25 °C) 50 S13360-**50PE S13360-**50CS Photon detection efficiency (%) Photon detection efficiency (%) S13360-**25PE S13360-**25CS 40 30 20 10 0 200 300 400 500 600 700 800 900 1000 40 30 20 10 0 200 300 400 500 600 700 800 900 1000 Wavelength (nm) Wavelength (nm) KAPDB0321EA KAPDB0322EA Pixel pitch: 75 μm (Typ. Ta=25 ˚C) 50 Photon detection efficiency (%) S13360-**75PE S13360-**75CS 40 30 20 10 0 200 300 400 500 600 700 800 900 1000 Wavelength (nm) KAPDB0325EA Photon detection efficiency does not include crosstalk or afterpulses. 4 MPPC (Multi-Pixel Photon Counter) S13360 series Overvoltage specifications of gain, crosstalk probability, photon detection efficiency (typical example) (Ta=25 °C) 1.6 × 106 40 Gain Gain Crosstalk probability Photon detection efficiency (λ=450 nm) 1.2 × 106 30 8.0 × 105 20 4.0 × 105 10 0 0 2 4 6 8 0 10 Crosstalk probability, photon detection efficiency (%) Pixel pitch: 25 μm Overvoltage (V) KAPDB0323EA (Ta=25 °C) 6 × 106 Gain Crosstalk probability Photon detection efficiency (λ=450 nm) Gain 5 × 106 60 50 4 × 106 40 3 × 106 30 2 × 106 20 1 × 106 10 0 0 2 4 6 8 0 10 Crosstalk probability, photon detection efficiency (%) Pixel pitch: 50 μm Overvoltage (V) KAPDB0324EA 5 MPPC (Multi-Pixel Photon Counter) S13360 series (Ta=25 °C) 1.6 × 107 Gain Crosstalk probability Photon detection efficiency (λ=450 nm) 80 70 1.2 × 107 60 Gain 50 8.0 × 106 40 30 4.0 × 106 20 10 0 0 2 4 6 8 0 10 Crosstalk probability, photon detection efficiency (%) Pixel pitch: 75 μm Overvoltage (V) KAPDB0326EA MPPC characteristics vary with the operating voltage. Although increasing the operating voltage improves the photon detection efficiency and time resolution, it also increases the dark count and crosstalk at the same time, so an optimum operating voltage must be selected to match the application. 6 MPPC (Multi-Pixel Photon Counter) S13360 series Dimensional outlines (unit: mm) S13360-1325CS/-1350CS/-1375CS +0 6.0 -0.25 Cathode terminal indicator hole 1.3 1.3 5.0 ± 0.2 Photosensitive area 1.3 × 1.3 Silicone resin 12 ± 1.0 1.0 1.5 Photosensitive surface ϕ0.45 ± 0.05 Lead 3.0 ± 0.2 Lead material: Fe-Ni-Co alloy Lead processing: Au plating Tolerance unless otherwise noted: ±0.2 Chip position accuracy: X, Y≤±0.25 with respect to package center The coating resin may extend a maximum of 0.1 mm above the upper surface of the package. KAPDA0155EA S13360-3025CS/-3050CS/-3075CS 6.55 ± 0.15 * * 3.0 5.9 ± 0.15 3.0 Photosensitive area 3.0 × 3.0 0.33 2.0 0.45 Silicone resin * 6.0 ± 0.5 Photosensitive surface 2.0 Lead material: Oxygen-free copper Lead processing: Au plating Tolerance unless otherwise noted: ±0.2 Chip position accuracy: with respect to package center -0.25≤X≤+0.25 -0.53≤Y≤-0.13 The coating resin may extend a maximum of 0.1 mm above the upper surface of the package. 2.54 ± 0.15 ɸ0.46 ± 0.05 Lead * Metal electrodes connecting to the internal electrodes are exposed on the sides of the ceramic package. To avoid short circuits, never allow other conductors to come in contact with these metal electrodes. KAPDA0156EA 7 MPPC (Multi-Pixel Photon Counter) S13360 series S13360-6025CS/-6050CS/-6075CS 10.1 ± 0.1 (10.5) 0.3 2.0 ± 0.1 Photosensitive surface 0.4 Silicone resin 8.9 ± 0.1 6.0 6.0 Photosensitive area 6.0 × 6.0 ɸ0.5 Lead 7.4 ± 0.2 Index mark: Anode Lead material: Fe-Ni-Co alloy Lead processing: Au plating Tolerance unless otherwise noted: ±0.2 Chip position accuracy: X, Y≤±0.3 with respect to package center The coating resin may extend a maximum of 0.1 mm above the upper surface of the package. KAPDA0157EB 8 MPPC (Multi-Pixel Photon Counter) S13360 series S13360-1325PE/-1350PE/-1375PE 0.4 ± 0.15 1.3 0.26 ± 0.15* 0.4 ± 0.15 2.1 Photosensitive area 1.3 × 1.3 1.3 Epoxy resin 0.3 0.85 ± 0.15 0.4 ± 0.15 2.625 Photosensitive surface 0.6 0.5 0.6 NC Cathode Anode NC Index mark Tolerance unless otherwise noted: ±0.1 * Distance from chip center to package center 0.6 1.425 0.6 KAPDA0158EA S13360-3025PE/-3050PE/-3075PE 4.35 0.925 ± 0.15 3.0 0.25 ± 0.15* 0.3 Epoxy resin 1.45 ± 0.15 3.0 0.425 ± 0.15 3.85 Photosensitive area 3.0 × 3.0 Photosensitive surface Index mark 1.0 2.2 1.0 4.25 Tolerance unless otherwise noted: ±0.1 * Distance from chip center to package center KAPDA0159EA 9 MPPC (Multi-Pixel Photon Counter) S13360 series 7.35 6.0 0.25 ± 0.15* Photosensitive area 6.0 × 6.0 6.85 0.425 ± 0.15 S13360-6025PE/-6050PE/-6075PE 6.0 0.3 1.45 ± 0.2 6.85 Epoxy resin 4.2 0.425 ± 0.15 Photosensitive surface 7.35 4.6 NC Anode Cathode NC Tolerance unless otherwise noted: ±0.1 * Distance from chip center to package center Index mark (4×) ϕ1.0 (Au pattern) KAPDA0153EA 10 MPPC (Multi-Pixel Photon Counter) S13360 series Recommended land pattern (Unit: mm) S13360-1325PE-1350PE/-1375PE S13360-3025PE/-3050PE/-3075PE 4.35 1.1 1.1 2.2 1.1 0.7 0.7 2.025 KAPDC0057EA KAPDC0056EA S13360-6025PE/-6050PE/-6075PE 4.2 (4 ×) ɸ1.1 4.6 KAPDC0057EA Temperature profile measurement example using our experimental hot-air reflow oven (S13360-1350PE) 300 °C 240 °C max. Temperature 220 °C 190 °C 170 °C Preheat 70 to 90 s Soldering 40 s max. Time KPICB0171EA ∙ This surface mount type package product supports lead-free soldering. After unpacking, store it in an environment at a temperature of 25 °C or less and a humidity of 60% or less, and perform soldering within 24 hours. ∙ The effect that the product is subject to during reflow soldering varies depending on the circuit board and reflow furnace that are used. Before actual reflow soldering, check for any problems by testing out the reflow soldering methods in advance. 11 MPPC (Multi-Pixel Photon Counter) S13360 series Precautions ∙ If necessary, incorporate appropriate protective circuits in power supplies, devices, and measuring instruments to prevent overvoltage and overcurrent. Related information www.hamamatsu.com/sp/ssd/doc_en.html Precautions ∙ Disclaimer ∙ Metal, ceramic, plastic package products ∙ Surface mount type products MPPC is a registered trademark of Hamamatsu Photonics K.K. Information described in this material is current as of May, 2016. Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater, N.J. 08807, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39) 02-93581733, Fax: (39) 02-93581741 China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Cat. No.KAPD1052E03 May 2016 DN 12