s13360 series kapd1052e

MPPC® (Multi-Pixel Photon Counter)
S13360 series
MPPCs for precision measurement
MPPC is a type of device called SiPM (silicon photomultipliers). It is a new type of photon counting device that consists of
multiple Geiger mode APD (avalanche photodiode) pixels. It is an opto-semiconductor with outstanding photon counting capability and low operating voltage and is immune to the effects of magnetic fields.
The S13360 series are MPPCs for precision measurement. The MPPCs inherits the superb low afterpulse characteristics of
previous products and further provide lower crosstalk and lower dark count. They are suitable for precision measurement, such
as flow cytometry, DNA sequencer, laser microscope, and fluorescence measurement, that requires low noise characteristics.
Features
Applications
Reduced crosstalk and dark count
(compared to previous products)
Fluorescence measurement
Outstanding photon counting capability (outstanding photon
detection efficiency versus numbers of incident photons)
Flow cytometry
Laser microscopes
Compact
DNA sequencers
Environmental analysis
Operates at room temperature
Low voltage (VBR=53 V typ.) operation
Various academic research
High gain: 105 to 106
Excellent time resolution
Immune to the effects of magnetic fields
Operates with simple readout circuit
MPPC module also available (sold separately)
Lower noise
When an MPPC detects photons, the output may contain spurious pulses, namely afterpulse and crosstalk, that are separate from the output pulses of the incident photons. Afterpulses are output later than the timing at which the incident light is received. Crosstalk is output
from other pixels at the same time as the detection of light.
Previous products achieved lower afterpulse through the improvement of material and wafer process technology, but with the S13360 series, low crosstalk has been achieved in addition to low afterpulse.
Pulse waveform comparison (typical example)
Previous product
Improved product (reference data: S13360-3050CS series)
(M=1.25 × 106)
50 mV
50 mV
(M=1.25 × 106)
10 ns
10 ns
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MPPC (Multi-Pixel Photon Counter)
S13360 series
Selection guide
Type no.
Pixel pitch
(μm)
S13360-1325CS
S13360-1325PE
S13360-3025CS
S13360-3025PE
25
S13360-6025CS
S13360-6025PE
S13360-1350CS
S13360-1350PE
S13360-3050CS
S13360-3050PE
50
S13360-6050CS
S13360-6050PE
S13360-1375CS
S13360-1375PE
S13360-3075CS
S13360-3075PE
75
S13360-6075CS
S13360-6075PE
Effective photosensitive
area
(mm)
Number of pixels
1.3 × 1.3
2668
3.0 × 3.0
14400
6.0 × 6.0
57600
1.3 × 1.3
667
3.0 × 3.0
3600
6.0 × 6.0
14400
1.3 × 1.3
285
3.0 × 3.0
1600
6.0 × 6.0
6400
Fill factor
(%)
Package
Ceramic
Surface mount type
Ceramic
47
Surface mount type
Ceramic
Surface mount type
Ceramic
Surface mount type
Ceramic
74
Surface mount type
Ceramic
Surface mount type
Ceramic
Surface mount type
Ceramic
82
Surface mount type
Ceramic
Surface mount type
Structure / Absolute maximum ratings
Type no.
(package)
S13360-****CS
(ceramic)
S13360-****PE
(surface mount type)
Window material
Refractive
index of
window
material
Silicone resin
1.41
Absolute maximum ratings
Operating
Storage
temperature*1 temperature*1
Topr
Tstg
(°C)
(°C)
-20 to +60
Epoxy resin
1.55
-20 to +80
Soldering conditions
Reflow soldering
conditions*2
Tsol
350 °C or less, once,
within 3 seconds*3
-
-
Peak temperature: 240 °C,
twice (see P.11)
*1: No condensation
*2: JEDEC level 5a
*3: Separate by at least 1 mm from the lead root.
Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the
product within the absolute maximum ratings.
2
MPPC (Multi-Pixel Photon Counter)
S13360 series
Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
Dark count*5
Type no.
Photon
Spectral
Peak
detection
Measure- response sensitivity
efficiency
range wavelength
ment
PDE*4
λp
λ
conditions
λ=λp
S13360-1325CS
(nm)
270 to 900
S13360-1325PE
320 to 900
S13360-3025CS
S13360-3025PE
Vover
=5 V
S13360-6025PE
320 to 900
S13360-1350CS
270 to 900
S13360-1350PE
320 to 900
S13360-3050PE
270 to 900
320 to 900
S13360-6050CS
270 to 900
S13360-6050PE
320 to 900
S13360-1375CS
270 to 900
S13360-1375PE
320 to 900
S13360-3075CS
S13360-3075PE
Vover
=3 V
25
320 to 900
270 to 900
Vover
=3 V
(%)
270 to 900
S13360-6025CS
S13360-3050CS
(nm)
450
40
270 to 900
50
320 to 900
S13360-6075CS
270 to 900
S13360-6075PE
320 to 900
Terminal
capacitance
Ct
Typ.
Max.
(kcps)
(kcps)
(pF)
70
210
60
400
1200
320
1600
5000
1280
90
270
60
500
1500
320
2000
6000
1280
90
270
60
500
1500
320
2000
6000
1280
Breakdown
voltage
VBR
Gain
M
(V)
7.0 × 105
1.7 × 106
53 ± 5
4.0 × 106
Temperature
Recomcoefficient
mended
Crosstalk
at recomoperating
probability
mended
voltage
operating
Vop
voltage
ΔTVop
(%)
(V)
(mV/°C)
1
VBR + 5
3
VBR + 3
7
VBR + 3
54
*4: Photon detection efficiency does not include crosstalk or afterpulses.
*5: Threshold=0.5 p.e.
Note: The above characteristics were measured at the operating voltage that yields the listed gain. (See the data attached to each product.)
Connection example
+V
1 kΩ
0.1 μF
MPPC
Signal
Amplifier
KAPDC0024EB
3
MPPC (Multi-Pixel Photon Counter)
S13360 series
Photon detection efficiency vs. wavelength (typical example)
Pixel pitch: 25 μm
Pixel pitch: 50 μm
(Typ. Ta=25 °C)
50
(Typ. Ta=25 °C)
50
S13360-**50PE
S13360-**50CS
Photon detection efficiency (%)
Photon detection efficiency (%)
S13360-**25PE
S13360-**25CS
40
30
20
10
0
200
300
400
500
600
700
800
900
1000
40
30
20
10
0
200
300
400
500
600
700
800
900
1000
Wavelength (nm)
Wavelength (nm)
KAPDB0321EA
KAPDB0322EA
Pixel pitch: 75 μm
(Typ. Ta=25 ˚C)
50
Photon detection efficiency (%)
S13360-**75PE
S13360-**75CS
40
30
20
10
0
200
300
400
500
600
700
800
900
1000
Wavelength (nm)
KAPDB0325EA
Photon detection efficiency does not include crosstalk or afterpulses.
4
MPPC (Multi-Pixel Photon Counter)
S13360 series
Overvoltage specifications of gain, crosstalk probability, photon detection efficiency (typical example)
(Ta=25 °C)
1.6 × 106
40
Gain
Gain
Crosstalk probability
Photon detection efficiency (λ=450 nm)
1.2 × 106
30
8.0 × 105
20
4.0 × 105
10
0
0
2
4
6
8
0
10
Crosstalk probability, photon detection efficiency (%)
Pixel pitch: 25 μm
Overvoltage (V)
KAPDB0323EA
(Ta=25 °C)
6 × 106
Gain
Crosstalk probability
Photon detection
efficiency (λ=450 nm)
Gain
5 × 106
60
50
4 × 106
40
3 × 106
30
2 × 106
20
1 × 106
10
0
0
2
4
6
8
0
10
Crosstalk probability, photon detection efficiency (%)
Pixel pitch: 50 μm
Overvoltage (V)
KAPDB0324EA
5
MPPC (Multi-Pixel Photon Counter)
S13360 series
(Ta=25 °C)
1.6 × 107
Gain
Crosstalk probability
Photon detection
efficiency (λ=450 nm)
80
70
1.2 × 107
60
Gain
50
8.0 × 106
40
30
4.0 × 106
20
10
0
0
2
4
6
8
0
10
Crosstalk probability, photon detection efficiency (%)
Pixel pitch: 75 μm
Overvoltage (V)
KAPDB0326EA
MPPC characteristics vary with the operating voltage. Although increasing the operating voltage improves the photon detection efficiency and time resolution, it also increases the dark count and crosstalk at the same time, so an optimum operating voltage must be
selected to match the application.
6
MPPC (Multi-Pixel Photon Counter)
S13360 series
Dimensional outlines (unit: mm)
S13360-1325CS/-1350CS/-1375CS
+0
6.0 -0.25
Cathode terminal
indicator hole
1.3
1.3
5.0 ± 0.2
Photosensitive area
1.3 × 1.3
Silicone resin
12 ± 1.0
1.0
1.5
Photosensitive surface
ϕ0.45 ± 0.05
Lead
3.0 ± 0.2
Lead material: Fe-Ni-Co alloy
Lead processing: Au plating
Tolerance unless otherwise noted: ±0.2
Chip position accuracy:
X, Y≤±0.25 with respect to package center
The coating resin may extend a maximum of
0.1 mm above the upper surface of the package.
KAPDA0155EA
S13360-3025CS/-3050CS/-3075CS
6.55 ± 0.15
*
*
3.0
5.9 ± 0.15
3.0
Photosensitive area
3.0 × 3.0
0.33
2.0
0.45
Silicone resin
*
6.0 ± 0.5
Photosensitive
surface
2.0
Lead material: Oxygen-free copper
Lead processing: Au plating
Tolerance unless otherwise noted: ±0.2
Chip position accuracy:
with respect to package center
-0.25≤X≤+0.25
-0.53≤Y≤-0.13
The coating resin may extend a maximum of
0.1 mm above the upper surface of the package.
2.54 ± 0.15
ɸ0.46 ± 0.05
Lead
* Metal electrodes connecting to the internal electrodes
are exposed on the sides of the ceramic package.
To avoid short circuits, never allow other conductors
to come in contact with these metal electrodes.
KAPDA0156EA
7
MPPC (Multi-Pixel Photon Counter)
S13360 series
S13360-6025CS/-6050CS/-6075CS
10.1 ± 0.1
(10.5)
0.3
2.0 ± 0.1
Photosensitive surface
0.4
Silicone resin
8.9 ± 0.1
6.0
6.0
Photosensitive area
6.0 × 6.0
ɸ0.5
Lead
7.4 ± 0.2
Index mark:
Anode
Lead material: Fe-Ni-Co alloy
Lead processing: Au plating
Tolerance unless otherwise noted: ±0.2
Chip position accuracy:
X, Y≤±0.3 with respect to package center
The coating resin may extend a maximum of
0.1 mm above the upper surface of the package.
KAPDA0157EB
8
MPPC (Multi-Pixel Photon Counter)
S13360 series
S13360-1325PE/-1350PE/-1375PE
0.4 ± 0.15
1.3
0.26 ± 0.15*
0.4 ± 0.15
2.1
Photosensitive area
1.3 × 1.3
1.3
Epoxy resin
0.3
0.85 ± 0.15
0.4 ± 0.15
2.625
Photosensitive surface
0.6 0.5 0.6
NC
Cathode
Anode
NC
Index mark
Tolerance unless otherwise noted: ±0.1
* Distance from chip center to package center
0.6 1.425 0.6
KAPDA0158EA
S13360-3025PE/-3050PE/-3075PE
4.35
0.925 ± 0.15
3.0
0.25 ± 0.15*
0.3
Epoxy resin
1.45 ± 0.15
3.0
0.425 ± 0.15
3.85
Photosensitive area
3.0 × 3.0
Photosensitive surface
Index mark
1.0
2.2
1.0
4.25
Tolerance unless otherwise noted: ±0.1
* Distance from chip center to package center
KAPDA0159EA
9
MPPC (Multi-Pixel Photon Counter)
S13360 series
7.35
6.0
0.25 ± 0.15*
Photosensitive area
6.0 × 6.0
6.85
0.425 ± 0.15
S13360-6025PE/-6050PE/-6075PE
6.0
0.3
1.45 ± 0.2
6.85
Epoxy resin
4.2
0.425 ± 0.15
Photosensitive surface
7.35
4.6
NC
Anode
Cathode
NC
Tolerance unless otherwise noted: ±0.1
* Distance from chip center to package center
Index mark
(4×) ϕ1.0
(Au pattern)
KAPDA0153EA
10
MPPC (Multi-Pixel Photon Counter)
S13360 series
Recommended land pattern (Unit: mm)
S13360-1325PE-1350PE/-1375PE
S13360-3025PE/-3050PE/-3075PE
4.35
1.1
1.1
2.2
1.1
0.7
0.7
2.025
KAPDC0057EA
KAPDC0056EA
S13360-6025PE/-6050PE/-6075PE
4.2
(4 ×) ɸ1.1
4.6
KAPDC0057EA
Temperature profile measurement example using our experimental hot-air reflow oven (S13360-1350PE)
300 °C
240 °C max.
Temperature
220 °C
190 °C
170 °C
Preheat
70 to 90 s
Soldering
40 s max.
Time
KPICB0171EA
∙ This surface mount type package product supports lead-free soldering. After unpacking, store it in an environment at a temperature of
25 °C or less and a humidity of 60% or less, and perform soldering within 24 hours.
∙ The effect that the product is subject to during reflow soldering varies depending on the circuit board and reflow furnace that are used.
Before actual reflow soldering, check for any problems by testing out the reflow soldering methods in advance.
11
MPPC (Multi-Pixel Photon Counter)
S13360 series
Precautions
∙ If necessary, incorporate appropriate protective circuits in power supplies, devices, and measuring instruments to prevent overvoltage
and overcurrent.
Related information
www.hamamatsu.com/sp/ssd/doc_en.html
Precautions
∙ Disclaimer
∙ Metal, ceramic, plastic package products
∙ Surface mount type products
MPPC is a registered trademark of Hamamatsu Photonics K.K.
Information described in this material is current as of May, 2016.
Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the
information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always
contact us for the delivery specification sheet to check the latest specifications.
The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that
one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use.
Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission.
www.hamamatsu.com
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater, N.J. 08807, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39) 02-93581733, Fax: (39) 02-93581741
China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866
Cat. No.KAPD1052E03 May 2016 DN
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