3 STACK PULSED LASER DIODE L11348-330-04 FEATURES Peak Output Power : Fep 90 W Peak Emission Wavelength : 870 nm ± 10 nm Emitting Area Size : 300 mm x 10 mm APPLICATIONS Laser Range Finder Security ABSOLUTE MAXIMUM RATINGS (Top(c) = 25 °C) Symbol Value Unit Pulsed Foward Current Parameter Ifp 35 A Reverse Voltage Vr 2 V Pulse Duration tw 100 ns Duty Ratio Operating Temperature Storage Temperature DR 0.075 % Top(c) -40 to +85 °C Tstg -40 to +100 °C CHARACTERISTICS (Top(c) = 25 °C) Parameter Symbol Pulsed Radiant Power (Peak Power) Conditions Value Fep Peak Emission Wavelength lp 860 870 880 nm Forward Voltage Vf — 17 — V Spectral Radiation Half Bandwidth Dl — 6 — nm tr — — 2 ns Rise Time Beam Spread Angle Ifp = 30 A Typ. 90 Max. — Unit Min. 85 W Parallel q// Ifp = 30 A 7 10 13 degree Vertical q^ FWHM 19 24 29 degree Lasing Threshold Current Ith — — 1 — A Emitting Area Size — Value at designing — 300 ´ 10 — mm Note: General operating condition: Pulse Width tw = 50 ns, Repetition frequency fr = 1 kHz Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2011 Hamamatsu Photonics K.K. PULSED LASER DIODE L11348-330-04 Figure 1: Radiant Flux vs. Forward Current (Typ.) 120 80 60 40 20 0 10 5 15 20 25 30 35 40 (Ifp = 30 A, Top(C) = 25 °C) 100 Relative Radiant Flux (%) Radiant Flux Fep (W) 100 0 Figure 2: Emission Spectrum (Typ.) (Top(C) = 25 °C) 80 60 40 20 0 850 Pulsed Forward Current Ifp (A) 855 860 865 870 875 880 885 890 Wavelength (nm) Figure 3: Directivity (Typ.) (Ifp = 30 A, Top(C) = 25 °C) Relative Radiant Flux (%) 100 80 Parallel q// 60 Vertical q^ 40 20 0 -50 -10 -30 10 30 50 Angle (degree) Figure 4: Dimensional Outline (Unit : mm) +0 9.0 - 0.1 7.0 MAX. 5.7±0.2 Glass Window 2.4±0.2 LD Chip 1.5±0.1 0.45±0.05 7.0±0.5 5.1±0.5 0.3 MAX. 2.0 MIN. 1.0 0.4 2.54±0.2 LD LD CATHODE LD ANODE N.C.(CASE) HAMAMATSU PHOTONICS K.K. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Laser Group, Sales Dept. 1-8-3, Shinmiyakoda, Kita-ku, Hamamatsu City, 431-2103, Japan, Telephone: (81)53-484-1301, Fax: (81)53-484-1302, E-mail: [email protected] U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P. O. Box 6910, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218 E-mail: [email protected] Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-265-8 E-mail: [email protected] France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10 E-mail: [email protected] United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road Welwyn Garden City Hertfordshire AL7 1BW, United Kingdom, Telephone: 44-(0)1707-294888, Fax: 44(0)1707-325777 E-mail: [email protected] North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01 E-mail: [email protected] Italy: Hamamatsu Photonics Italia: S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)02-935 81 733, Fax: (39)02-935 81 741 E-mail: [email protected] China: Hamamatsu Photonics (China) Co., Ltd.: 1201 Tower B, Jiaming Center, 27 Dongsanhuan Road North, Chaoyang District, Beijing 100020, China, Telephone: (86)10-6586-6006, Fax: (86)10-6586-2866 E-mail: [email protected] Cat. No. LPLD2015E02 JUN. 2013