SINGLE EMITTER PULSED LASER DIODE L11649-120-04 PRELIMINARY DATA FEATURES Peak Output Power : Fep 20 W Peak Emission Wavelength : 870 nm ± 10 nm Emitting Area Size : 200 mm x 1 mm APPLICATIONS Laser Range Finder Security ABSOLUTE MAXIMUM RATINGS (Top(c) = 25 °C) Symbol Value Unit Pulsed Foward Current Parameter Ifp 25 A Reverse Voltage Vr 2 V Pulse Duration tw 100 ns Duty Ratio Operating Temperature Storage Temperature DR 0.075 % Top(c) -40 to +85 °C Tstg -40 to +100 °C CHARACTERISTICS (Top(c) = 25 °C) Parameter Symbol Pulsed Radiant Power (Peak Power) Conditions Value Fep Forward Voltage Vf — 7 — V Peak Emission Wavelength lp 860 870 880 nm Spectral Radiation Half Bandwidth Dl — 4 — nm tr — — 2 ns Rise Time Beam Spread Angle Ifp = 20 A Typ. 22 Max. — Unit Min. 19 W Parallel q// Ifp = 20 A 7 10 13 degree Vertical q^ FWHM 25 30 35 degree Lasing Threshold Current Ith — — 0.8 — A Emitting Area Size — Value at designing — 200 ´ 1 — mm Note: General operating condition: Pulse Width tw = 50 ns, Repetition frequency fr = 1 kHz Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2010 Hamamatsu Photonics K.K. PULSED LASER DIODE L11649-120-04 Figure 1: Radiant Flux vs. Forward Current (Typ.) Figure 2: Emission Spectrum (Typ.) (Top(C) = 25 °C) 30 (Ifp = 20 A, Top(C) = 25 °C) 100 90 Relative Radiant Flux (%) Radiant Flux Fep (W) 25 20 15 10 5 80 70 60 50 40 30 20 10 0 0 5 10 15 20 25 30 0 850 Pulsed Forward Current Ifp (A) 860 870 880 890 Wavelength (nm) Figure 3: Directivity (Typ.) (Ifp = 20 A, Top(C) = 25 °C) 100 Relative Radiant Flux (%) 90 80 Parallel 70 q// Vertical q^ 60 50 40 30 20 10 0 -50 -30 -10 10 30 50 Angle (degree) Figure 4: Dimensional Outline (Unit : mm) +0 9.0 - 0.1 7.0 MAX. 5.7±0.2 Glass Window 2.4±0.2 LD Chip 1.5±0.1 0.45±0.05 7.0±0.5 5.1±0.5 0.3 MAX. 2.0 MIN. 1.0 0.4 2.54±0.2 LD LD CATHODE LD ANODE N.C.(CASE) HAMAMATSU PHOTONICS K.K. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Laser Group, Sales Dept. 1-8-3, Shinmiyakoda, Kita-ku, Hamamatsu City, 431-2103, Japan, Telephone: (81)53-484-1301, Fax: (81)53-484-1302, E-mail: [email protected] U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P. O. Box 6910, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218 E-mail: [email protected] Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-265-8 E-mail: [email protected] France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10 E-mail: [email protected] United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road Welwyn Garden City Hertfordshire AL7 1BW, United Kingdom, Telephone: 44-(0)1707-294888, Fax: 44(0)1707-325777 E-mail: [email protected] North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01 E-mail: [email protected] Italy: Hamamatsu Photonics Italia: S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)02-935 81 733, Fax: (39)02-935 81 741 E-mail: [email protected] China: Hamamatsu Photonics (China) Co., Ltd.: 1201 Tower B, Jiaming Center, 27 Dongsanhuan Road North, Chaoyang District, Beijing 100020, China, Telephone: (86)10-6586-6006, Fax: (86)10-6586-2866 E-mail: [email protected] Cat. No. LPLD2016E02 JUN. 2013