Phototransistor S2829 Subminiature package phototransistor The S2829 is a high sensitivity phototransistor molded into a visible-cut plastic package. Features Application Subminiature plastic package with lens Rotary encoders Visible-cut package Touch screen High sensitivity: 1.8 mA (1000 lx) Absolute maximum ratings (Ta=25 °C) Parameter Collector-emitter voltage Emitter-collector voltage Collector current Collector dissipation Operating temperature Storage temperature Soldering Symbol VCEO VECO Ic Pc Topr Tstg - Condition No dew condition*1 No dew condition*1 Value 35 4 20 80 -25 to +85 -40 to +100 260 °C, 3 s, at least 2.5 mm away from package surface Unit V V mA mW °C °C - *1: When there is a temperature difference between a product and the surrounding area in high humidity environment, dew condensation may occur on the product surface. Dew condensation on the product may cause deterioration in characteristics and reliability. Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. Electrical and optical characteristics (Ta=25 °C) Parameter Photocurrent*2 Dark current Collector-emitter saturation voltage Peak sensitivity wavelength Rise time Fall time Symbol Ic ICEO VCE(sat) λp tr tf Condition VCE=5 V, 1000 lx VCE=20 V, 0 lx Ic=0.3 mA, 1000 lx Min. 0.3 - Vcc=5 V, Ic=1 mA RL=100 Ω Typ. 1.8 800 2 3 Max. 100 0.4 - Unit mA nA V nm μs μs *2: Measured with a CIE standard “A” light source at 2856 K Response time measurement circuit IF Vcc IF Pulse input 90% VO 10% VO tr tf RL KPTRC0001EA www.hamamatsu.com 1 Phototransistor S2829 Spectral response Collector power dissipation vs. ambient temperature (Typ. Ta=25 °C) Relative sensitivity (%) 80 60 40 20 0 400 100 Collector power dissipation (mW) 100 500 600 700 800 900 80 60 40 20 0 -25 1000 1100 1200 Wavelength (nm) 0 25 50 100 Ambient temperature (°C) KPTRB0005EB Photocurrent vs. ambient temperature KPCB0001EA Photocurrent vs. illuminance (Typ. VCE=5 V, E=1000 lx) 160 75 10 (Typ. Ta=25 °C, VCE=5 V, 2856 K) 120 Photocurrent (mA) Relative photocurrent (%) 140 100 80 60 1.0 0.1 40 20 -25 0 25 50 75 100 Ambient temperature (°C) 0.01 10 100 1000 10000 Illuminance (lx) KPTRB0002EA KPTR0013EA 2 Phototransistor S2829 Dark current vs. ambient temperature Directivity (Typ. Ta=25 °C) (Typ. VCE=20 V) 1 µA 20° 0° 10° 100% 30° 100 nA Dark current 10° 20° 30° 80% 40° 40° 60% 10 nA 50° 50° 1 nA 40% 60° 60° 100 pA 70° 10 pA -25 0 25 50 75 20% 70° 80° 80° 90° 90° 100 Ambient temperature (°C) Relative sensitivity KPTRB0003EA KPTR0014EA Dimensional outline (unit: mm) 3.5 5° 1.6 10° 1.3 0.72 0.57 R0.45 1.6 3.5 (1.15) Visible-cut resin (black) 10° Burr 5° (1.0) 0.4 6.0 ± 1.0 0.16 0.6 2.54 (Specified at the lead root) Emitter Collector Tolerance unless otherwise noted: ±0.2, ±2° Shaded area indicates burr. Values in parentheses are not guaranteed, but for reference. KPTRA0001EA 3 Phototransistor S2829 Related information www.hamamatsu.com/sp/ssd/doc_en.html Precautions · Disclaimer · Metal, ceramic, plastic products Information described in this material is current as of June, 2015. Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater, N.J. 08807, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39) 02-93581733, Fax: (39) 02-93581741 China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Cat. No. KPTR1001E03 Jun. 2015 DN 4