VS-VSKD56.., VS-VSKE56.., VS-VSKJ56.., VS-VSKC56.. www.vishay.com Vishay Semiconductors ADD-A-PAK Gen 7 Power Modules Standard Diodes, 60 A FEATURES • High voltage • Industrial standard package • Low thermal resistance • UL approved file E78996 • Designed and qualified for industrial level • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 ADD-A-PAK BENEFITS PRODUCT SUMMARY IF(AV) 60 A Type Modules - Diode, High Voltage Package ADD-A-PAK Gen 7 Circuit Two diodes doubler circuit, two diodes common cathode, two diodes common anode, single diode • Excellent thermal performances obtained by the usage of exposed direct bonded copper substrate • Up to 1600 V • High surge capability • Easy mounting on heat sink ELECTRICAL DESCRIPTION MECHANICAL DESCRIPTION The ADD-A-PAK Gen 7, new generation of ADD-A-PAK module, combines the excellent thermal performances obtained by the usage of exposed direct bonded copper substrate, with advanced compact simple package solution and simplified internal structure with minimized number of interfaces. These modules are intended for general purpose high voltage applications such as high voltage regulated power supplies, lighting circuits, temperature and motor speed control circuits, UPS and battery charger. MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) CHARACTERISTICS 60 50 Hz 1300 60 Hz 1360 50 Hz 8.44 60 Hz 7.68 94 IF(RMS) IFSM I2t VALUES 114 °C I2t UNITS A kA2s 84.5 kA2s 400 to 1600 V TJ -40 to +150 °C TStg -40 to +150 °C VRRM Range Revision: 05-Apr-16 Document Number: 94625 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSKD56.., VS-VSKE56.., VS-VSKJ56.., VS-VSKC56.. www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 04 400 500 06 600 700 08 800 900 10 1000 1100 12 1200 1300 14 1400 1500 16 1600 1700 VS-VSK.56 IRRM MAXIMUM AT TJ = 150 °C mA 10 FORWARD CONDUCTION PARAMETER Maximum average forward current at case temperature Maximum RMS forward current SYMBOL IF(AV) IF(RMS) TEST CONDITIONS 180° conduction, half sine wave DC at 90 °C case temperature t = 10 ms Maximum peak, one-cycle forward, non-repetitive surge current IFSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2t Maximum I2t for fusing I2t t = 8.3 ms No voltage reapplied UNITS 60 A 114 °C 94 1300 No voltage reapplied 100 % VRRM reapplied VALUES 1360 1090 Sinusoidal half wave, initial TJ = TJ maximum 1140 8.44 7.68 100 % VRRM reapplied 5.43 t = 0.1 ms to 10 ms, no voltage reapplied 84.5 t = 10 ms t = 8.3 ms A 5.97 Low level value of threshold voltage VF(TO)1 (16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum 0.74 High level value of threshold voltage VF(TO)2 (I > x IF(AV)), TJ = TJ maximum 0.86 kA2s kA2s V Low level value of forward slope resistance rf1 (16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum 3.94 High level value of forward slope resistance rf2 (I > x IF(AV)), TJ = TJ maximum 3.43 VFM IFM = x IF(AV), TJ = 25 °C, tp = 400 μs square wave 1.6 V SYMBOL TEST CONDITIONS VALUES UNITS 10 mA 3000 (1 min) 3600 (1 s) V Maximum forward voltage drop m BLOCKING PARAMETER Maximum peak reverse leakage current IRRM TJ = 150 °C Maximum RMS insulation voltage VINS 50 Hz Revision: 05-Apr-16 Document Number: 94625 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSKD56.., VS-VSKE56.., VS-VSKJ56.., VS-VSKC56.. www.vishay.com Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Junction and storage temperature range TEST CONDITIONS TJ, TStg VALUES UNITS -40 to +150 °C Maximum internal thermal resistance, junction to case per leg RthJC DC operation 0.33 Typical thermal resistance, case to heat sink per module RthCS Mounting surface flat, smooth and greased 0.1 °C/W A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound. to heatsink Mounting torque ± 10 % busbar Approximate weight JEDEC® Case style 4 Nm 3 75 g 2.7 oz. ADD-A-PAK Gen 7 (TO-240AA) R CONDUCTION PER JUNCTION DEVICES VSK.56 SINE HALF WAVE CONDUCTION RECTANGULAR WAVE CONDUCTION 180° 120° 90° 60° 30° 180° 120° 90° 60° 30° 0.115 0.136 0.173 0.236 0.346 0.09 0.145 0.185 0.243 0.349 UNITS °C/W Note • Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Revision: 05-Apr-16 Document Number: 94625 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSKD56.., VS-VSKE56.., VS-VSKJ56.., VS-VSKC56.. Maximum average forward power loss (W) 150 RthJC (DC) = 0.33°C/W 140 130 120 180° 120° 90° 60° 30° 110 100 0 Maximum allowable case temperature (°C) Vishay Semiconductors 10 20 30 40 50 60 80 180° 120° 90° 60° 30° 60 RMS limit 100 DC 40 20 Per leg, Tj = 150°C 0 70 0 20 40 60 80 100 Average forward current (A) Fig. 1 - Current Ratings Characteristics Fig. 4 - Foward Power Loss Characteristics 150 RthJC (DC) = 0.33°C/W 140 130 120 DC 110 180° 120° 90° 60° 30° 1200 At any rated load condition and with rated Vrrm applied following surge Initial Tj = Tj max @ 60 Hz 0.0083 s @ 50 Hz 0.0100s 1000 800 600 400 Per leg 200 100 0 20 40 60 80 1 100 10 100 Number of equal amplitude half cycle current pulses (N) Average forward current (A) Fig. 2 - Current Ratings Characteristics Fig. 5 - Maximum Non-Repetitive Surge Current 90 1400 180° 120° 90° 60° 30° 80 70 60 Peak half sine wave forward current (A) Maximum average forward power loss (W) 120 Average forward current (A) Peak half sine wave forward current (A) Maximum allowable case temperature (°C) www.vishay.com RMS limit 50 40 30 20 10 Per leg, Tj = 150°C 0 0 10 20 30 40 50 60 70 Average forward current (A) Fig. 3 - Forward Power Loss Characteristics 1200 1000 Maximum Non-repetitive Surge Current Versus Pulse Train Duration. Initial Tj = 150°C No Voltage Reapplied Rated Vrrm reapplied 800 600 400 200 0.01 Per leg 0.1 1 Pulse train duration (s) Fig. 6 - Maximum Non-Repetitive Surge Current Revision: 05-Apr-16 Document Number: 94625 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSKD56.., VS-VSKE56.., VS-VSKJ56.., VS-VSKC56.. www.vishay.com Vishay Semiconductors Maximum total forward power loss (W) 120 0 RthSA = 0.5 °C/W 0.7 °C/W 1 °C/W 1.5 °C/W 2 °C/W 3 °C/W 7 °C/W 0 100 80 0 180° (Sine) DC 60 0 40 0 20 VSK.56 Series 0 Per leg, Tj = 150°C 0 0 20 40 60 80 0 100 0 20 Total RMS output current (A) 40 60 80 100 120 140 160 Maximum allowable ambient temperature (°C) Fig. 7 - Forward Power Loss Characteristics Maximum total power loss (W) 500 RthSA = 0.1 °C/W 0.2 °C/W 0.3 °C/W 0.5 °C/W 1 °C/W 180° (sine) 180° (rect) 400 300 200 100 2 x VSK.56 Series single phase bridge connected Tj = 150°C 0 0 20 40 60 80 100 120 140 160 0 20 Total output current (A) 40 60 80 100 120 140 160 Maximum allowable ambient temperature (°C) Fig. 8 - Forward Power Loss Characteristics Maximum total power loss (W) 500 RthSA = 0.3°C/W 0.4 °C/W 0.5 °C/W 0.7 °C/W 1 °C/W 1.5 °C/W 3 °C/W 400 120° (rect) 300 200 100 3 x VSK.56 Series three phase bridge connected Tj = 150°C 0 0 20 40 60 80 100 120 140 160 0 20 Total output current (A) 40 60 80 100 120 140 160 Maximum allowable ambient temperature (°C) Fig. 9 - Forward Power Loss Characteristics Revision: 05-Apr-16 Document Number: 94625 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSKD56.., VS-VSKE56.., VS-VSKJ56.., VS-VSKC56.. www.vishay.com Vishay Semiconductors Instantaneous forward current (A) 1000 Per leg 100 10 Tj = 150°C Tj = 25°C 1 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 Instantaneous forward voltage (V) Transient thermal impedance Z thJC (°C/W) Fig. 10 - Forward Voltage Characteristics 1 Steady state value RthJC = 0.33 °C/W (DC operation) 0.1 Per leg 0.01 0.001 0.01 0.1 1 10 Square wave pulse duration (s) Fig. 11 - Thermal Impedance ZthJC Characteristics ORDERING INFORMATION TABLE Device code VS-VS K D 56 1 2 3 4 / 16 5 1 - Vishay Semiconductors product 2 - Module type 3 - Circuit configuration (see Circuit Configuration table) 4 - Current code (60 A) 5 - Voltage code (see Voltage Ratings table) Note • To order the optional hardware go to www.vishay.com/doc?95172 Revision: 05-Apr-16 Document Number: 94625 6 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSKD56.., VS-VSKE56.., VS-VSKJ56.., VS-VSKC56.. www.vishay.com Vishay Semiconductors CIRCUIT CONFIGURATION CIRCUIT DESCRIPTION CIRCUIT CONFIGURATION CODE CIRCUIT DRAWING VSKD... ~ + (1) Two diodes doubler circuit (2) (3) D 3 2 1 VSKC... + - Two diodes common cathode (2) (1) (3) C 3 2 1 VSKJ... Two diodes common anode + + (2) (1) (3) J 3 2 1 VSKE... + - (1) (3) (2) Single diode E 2 3 1 LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95369 Revision: 05-Apr-16 Document Number: 94625 7 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors ADD-A-PAK Generation VII - Diode DIMENSIONS in millimeters (inches) 29 ± 0.5 (1 ± 0.020) 30 ± 0.5 (1.18 ± 0.020) 35 REF. 18 (0.7) REF. 24 ± 0.5 (1 ± 0.020) 6.7 ± 0.3 (0.26 ± 0.012) Viti M5 x 0.8 Screws M5 x 0.8 Document Number: 95369 Revision: 11-Nov-08 7 6 4 5 3 2 1 6.3 ± 0.2 (0.248 ± 0.008) 22.6 ± 0.2 (0.89 ± 0.008) 80 ± 0.3 (3.15 ± 0.012) 15 ± 0.5 (0.59 ± 0.020) 20 ± 0.5 (0.79 ± 0.020) 20 ± 0.5 (0.79 ± 0.020) 92 ± 0.75 (3.6 ± 0.030) For technical questions, contact: [email protected] www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000