VS-VSK.166..PbF, VS-VSK.196..PbF, VS-VSK.236..PbF Series www.vishay.com Vishay Semiconductors Standard Recovery Diodes, 165 A to 230 A (INT-A-PAK Power Modules) FEATURES • High voltage • Electrically isolated by DBC ceramic (AI2O3) • 3500 VRMS isolating voltage • Industrial standard package • High surge capability • Glass passivated chips • Modules uses high voltage power diodes in four basic configurations • Simple mounting • UL approved file E78996 INT-A-PAK • Designed and qualified for multiple level • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRODUCT SUMMARY IF(AV) 165 A to 230 A Type Modules - Diode, High Voltage Package INT-A-PAK Circuit Single diode, Two diodes common cathode, Two diodes common cathode, Two diodes doubler circuit APPLICATIONS • DC motor control and drives • Battery chargers • Welders • Power converters MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) CHARACTERISTICS VSK.166.. VSK.196.. VSK.236.. UNITS 165 195 230 A 100 100 100 °C 260 305 360 50 Hz 4000 4750 5500 60 Hz 4200 4980 5765 TC IF(RMS) IFSM I2t 50 Hz 80 113 151 60 Hz 73 103 138 798 1130 1516 I2t VRRM TJ Range A kA2s kA2s 400 to 1600 V -40 to +150 °C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VS-VSK.166 VS-VSK.196 VS-VSK.236 VOLTAGE CODE VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 04 400 500 08 800 900 12 1200 1300 14 1400 1500 16 1600 1700 IRRM AT 150 °C mA 20 Revision: 02-Apr-15 Document Number: 94357 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSK.166..PbF, VS-VSK.196..PbF, VS-VSK.236..PbF Series www.vishay.com Vishay Semiconductors FORWARD CONDUCTION PARAMETER SYMBOL Maximum average on-state current at case temperature Maximum RMS on-state current IF(AV) TEST CONDITIONS 180° conduction, half sine wave IF(RMS) t = 10 ms Maximum peak, one-cycle on-state, non-repetitive surge current IFSM No voltage reapplied t = 8.3 ms 100 % VRRM reapplied t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2t Maximum I2t for fusing I2t No voltage reapplied t = 8.3 ms Sine half wave, initial TJ = TJ maximum 100 % VRRM reapplied t = 10 ms t = 8.3 ms VSK.166 VSK.196 VSK.236 195 230 A 100 100 100 °C 260 305 360 4000 4750 5500 4200 4980 5765 3350 4000 4630 3500 4200 4850 80 113 151 73 103 138 56 80 107 52 73 98 t = 0.1 ms to 10 ms, no voltage reapplied 798 1130 1516 Low level value of threshold voltage VF(TO)1 (16.7 % x x IF(AV) < I < x IF(AV)), TJ maximum 0.73 0.69 0.7 High level value of threshold voltage VF(TO)2 (I > x IF(AV)), TJ maximum 0.88 0.78 0.83 Low level value on-state slope resistance rt1 (16.7 % x x IF(AV) < I < x IF(AV)), TJ maximum 1.5 1.3 1.2 High level value on-state rt2 (I > x IF(AV)), TJ maximum 1.26 1.2 1.07 VFM IFM = x IF(AV), TJ = 25 °C, 180° conduction Average power = VF(TO) x IF(AV) + rf x (IF(RMS))2 1.43 1.38 1.46 SYMBOL TEST CONDITIONS Maximum forward voltage drop UNITS 165 A kA2s kA2s V m V BLOCKING PARAMETER Maximum peak reverse and off-state leakage current IRRM TJ = 150 °C RMS insulation voltage VINS 50 Hz, circuit to base, all terminals shorted, t=1s VSK.166 VSK.196 VSK.236 UNITS 20 mA 3500 V THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction operating and storage temperature range TEST CONDITIONS -40 to +150 RthJC DC operation Maximum thermal resistance, case to heatsink per module RthCS Mounting surface smooth, flat and greased Approximate weight Case style IAP to heatsink busbar to IAP VSK.166 VSK.196 VSK.236 TJ, TStg Maximum thermal resistance, junction to case per junction Mounting torque ± 10 % VALUES 0.2 0.16 UNITS °C 0.14 K/W A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound. Lubricated threads. 0.05 4 to 6 Nm 200 g 7.1 oz. INT-A-PAK Revision: 02-Apr-15 Document Number: 94357 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSK.166..PbF, VS-VSK.196..PbF, VS-VSK.236..PbF Series www.vishay.com Vishay Semiconductors R CONDUCTION PER JUNCTION RECTANGULAR CONDUCTION AT TJ MAXIMUM SINUSOIDAL CONDUCTION AT TJ MAXIMUM DEVICES UNITS 180° 120° 90° 60° 30° 180° 120° 90° 60° 30° VSK.166 0.025 0.03 0.038 0.055 0.089 0.018 0.031 0.041 0.057 0.089 VSK.196 0.016 0.019 0.024 0.034 0.053 0.012 0.02 0.026 0.035 0.054 VSK.236 0.009 0.010 0.014 0.018 0.025 0.008 0.012 0.015 0.019 0.025 K/W Note • Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC 250 VSK.166.. Series RthJC (DC) = 0.20 K/W 140 130 Ø 120 Conduction angle 110 100 30° 90 60° 90° 120° 80 180° Maximum Average Forward Power Loss (W) Maximum Allowable Case Temperature (°C) 150 200 180° 120° 90° 60° 30° 150 RMS limit 100 Ø Conduction angle 50 0 70 0 40 80 120 160 200 0 Average Forward Current (A) Fig. 1 - Current Ratings Characteristics 40 80 120 160 200 Average Forward Current (A) Fig. 3 - On-State Power Loss Characteristics 150 300 VSK.166.. Series RthJC (DC) = 0.20 K/W 140 130 Ø 120 Conduction period 110 30° 100 60° 90° 120° 90 80 180° Maximum Average Forward Power Loss (W) Maximum Allowable Case Temperature (°C) VSK.166.. Series TJ = 150 °C DC 180° 120° 90° 60° 30° 250 200 RMS limit 150 Ø 100 Conduction period VSK.166.. Series Per junction TJ = 150 °C 50 DC 0 70 0 50 100 150 200 250 Average Forward Current (A) Fig. 2 - Current Ratings Characteristics 300 0 50 100 150 200 250 300 Average Forward Current (A) Fig. 4 - On-State Power Loss Characteristics Revision: 02-Apr-15 Document Number: 94357 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSK.166..PbF, VS-VSK.196..PbF, VS-VSK.236..PbF Series www.vishay.com At any rated load condition and with rated VRRM applied following surge. Initial TJ = 150 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s Peak Half Sine Wave Forward Current (A) 3500 3000 2500 2000 4000 1500 3000 2500 2000 1500 1000 VSK.166.. Series VSK.166.. Series 500 1000 1 10 Fig. 6 - Maximum Non-Repetitive Surge Current W K/ W 200 W 0.7 K/ K/W 150 R -Δ Maximum Total Forward Power Loss (W) K/ .12 0 0.5 W =0 VSK.166.. Series Per junction TJ = 150 °C 50 3 K/ A 100 4 W 150 0. 0. R thS 250 K/ 250 0.2 300 200 1 Pulse Train Duration (s) 300 DC 0.1 0.01 100 Number of Equal Amplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current Maximum Total Forward Power Loss (W) Maximum non-repetitive surge current versus pulse train duration. Initial TJ = 150 °C No voltage reapplied Rated VRRM reapplied 3500 Peak Half Sine Wave Forward Current (A) 4000 Vishay Semiconductors 100 50 0 0 50 100 150 200 0 250 Total RMS Output Current (A) 25 50 75 100 125 150 Maximum Allowable Ambient Temperature (°C) Fig. 7 - On-State Power Loss Characteristics 1800 1600 + ~ 1400 1200 180° (Sine) 180° (Rect) 1000 800 600 2 x VSK.166.. Series Single phase bridge Connected TJ = 150 °C 400 200 0 Maximum Total Power Loss (W) Maximum Total Power Loss (W) 1800 1600 R th SA 1400 0.0 1200 = 0.0 0. 12 4K /W 6K K/ W /W 1000 0.1 800 K/W 0.16 600 -Δ R 0.25 K/W K/W 0.5 K/W 400 200 0 0 100 200 300 400 Total Output Current (A) 500 0 25 50 75 100 125 150 Maximum Allowable Ambient Temperature (°C) Fig. 8 - On-State Power Loss Characteristics Revision: 02-Apr-15 Document Number: 94357 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSK.166..PbF, VS-VSK.196..PbF, VS-VSK.236..PbF Series www.vishay.com Vishay Semiconductors 1000 600 3 x VSK.166.. Series Three phase bridge Connected TJ = 150 °C 400 200 0 K/ W 0.1 1000 800 0.1 K/W R -Δ 800 06 W K/ - 0. 1200 02 0. 120° (Rect) = 1200 1400 SA ~ R th 1400 W K/ Maximum Total Power Loss (W) 1600 04 0. Maximum Total Power Loss (W) 1600 6K 600 0.25 400 /W K/W 0.5 K/W 200 0 0 100 200 300 400 0 500 Total Output Current (A) 25 50 75 100 125 150 Maximum Allowable Ambient Temperature (°C) Fig. 9 - On-State Power Loss Characteristics 300 VSK.196.. Series RthJC (DC) = 0.16 K/W 140 Maximum Average Forward Power Loss (W) Maximum Allowable Case Temperature (°C) 150 130 Ø 120 Conduction angle 110 100 30° 60° 90 90° 120° 80 180° 70 250 200 RMS limit 150 Ø 100 Conduction angle VSK.196.. Series TJ = 150 °C 50 0 0 50 100 150 200 250 0 40 80 120 160 200 Average Forward Current (A) Average Forward Current (A) Fig. 10 - Current Ratings Characteristics Fig. 12 - On-State Power Loss Characteristics 150 350 VSK.196.. Series RthJC (DC) = 0.16 K/W 140 130 Ø 120 Conduction period 110 30° 100 60° 90° 90 120° 180° 80 Maximum Average Forward Power Loss (W) Maximum Allowable Case Temperature (°C) 180° 120° 90° 60° 30° DC 180° 120° 90° 60° 30° 300 250 RMS limit 200 150 Ø Conduction period 100 VSK.196.. Series Per junction TJ = 150 °C 50 DC 70 0 0 50 100 150 200 250 300 Average Forward Current (A) Fig. 11 - Current Ratings Characteristics 350 0 50 100 150 200 250 300 350 Average Forward Current (A) Fig. 13 - On-State Power Loss Characteristics Revision: 02-Apr-15 Document Number: 94357 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSK.166..PbF, VS-VSK.196..PbF, VS-VSK.236..PbF Series www.vishay.com At any rated load condition and with rated VRRM applied following surge. Initial TJ = 150 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s Peal Half Sine Wave Forward Current (A) 4000 3500 3000 2500 2000 1500 5000 VSK.196.. Series 10 3500 3000 2500 2000 W .12 K/ K/W W R -Δ Maximum Total Forward Power Loss (W) =0 0 SA 50 0.7 K/ W 0.5 200 R th VSK.196.. Series Per junction TJ = 150 °C 250 K/ W 100 3 K/ 150 0. 0.4 2 300 0. 300 200 1.0 Fig. 15 - Maximum Non-Repetitive Surge Current 350 250 0.1 Pulse Train Duration (s) 350 DC VSK.196.. Series 1000 0.01 100 Number of Equal Amplitude Half Cycle Current Pulses (N) Fig. 14 - Maximum Non-Repetitive Surge Current Maximum Total Forward Power Loss (W) 4000 1500 1000 1 Maximum non-repetitive surge current versus pulse train duration. Initial TJ = 150 °C No voltage reapplied Rated VRRM reapplied 4500 Peak Half Sine Wave Forward Current (A) 4500 Vishay Semiconductors K/W 150 100 50 0 0 50 100 150 200 250 0 300 Total RMS Output Current (A) 25 50 75 100 125 150 Maximum Allowable Ambient Temperature (°C) Fig. 16 - On-State Power Loss Characteristics 02 K/ 2K W /W 0.1 R -Δ 0 0. 200 0.1 = 2 x VSK.196.. Series Single phase bridge Connected TJ = 150 °C 800 W 400 0.0 SA 600 0. 06 8 K K/W /W 1000 K/ 800 180° (Sine) 180° (Rect) R th ~ 04 + 1000 Maximum Total Power Loss (W) 1200 0. Maximum Total Power Loss (W) 1200 6K /W 600 0.25 400 K/W 0.4 K /W 0.7 K/W 200 0 0 100 200 300 Total Output Current (A) 400 0 25 50 75 100 125 150 Maximum Allowable Ambient Temperature (°C) Fig. 17 - On-State Power Loss Characteristics Revision: 02-Apr-15 Document Number: 94357 6 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSK.166..PbF, VS-VSK.196..PbF, VS-VSK.236..PbF Series www.vishay.com Vishay Semiconductors 1800 800 600 3 x VSK.196.. Series Three phase bridge Connected TJ = 150 °C 400 200 1200 K/ W 0.0 8K /W 1000 R -Δ 1000 06 W K/ 1200 0. 12 0. - 1600 1400 = 120° (Rect) SA ~ W K/ Maximum Total Power Loss (W) 1600 1400 R th + 04 0. Maximum Total Power Loss (W) 1800 0.1 2K /W 6K /W 0.25 K/W 0.4 K /W 800 0.1 600 400 200 0 0 0 100 200 300 400 500 0 600 25 50 75 100 125 150 Maximum Allowable Ambient Temperature (°C) Total Output Current (A) Fig. 18 - On-State Power Loss Characteristics 350 VSK.236.. Series RthJC (DC) = 0.14 K/W 150 140 Ø 130 Conduction angle 120 110 30° 100 60° 90° 90 120° Maximum Average Forward Power Loss (W) Maximum Allowable Case Temperature (°C) 160 250 RMS limit 200 150 Ø Conduction angle 100 VSK.236.. Series TJ = 150 °C 50 180° 0 80 50 0 100 150 200 0 250 50 100 150 200 250 Average Forward Current (A) Average Forward Current (A) Fig. 19 - Current Ratings Characteristics Fig. 21 - On-State Power Loss Characteristics 450 VSK.236.. Series RthJC (DC) = 0.14 K/W 140 130 Ø Conduction period 120 110 30° 100 60° 90 90° 120° 80 180° DC Maximum Average Forward Power Loss (W) 150 Maximum Allowable Case Temperature (°C) 180° 120° 90° 60° 30° 300 DC 180° 120° 90° 60° 30° 400 350 300 RMS limit 250 200 Ø Conduction period 150 VSK.236.. Series Per junction TJ = 150 °C 100 50 0 70 0 50 100 150 200 250 300 350 400 0 50 100 150 200 250 300 350 400 Average Forward Current (A) Average Forward Current (A) Fig. 20 - Current Ratings Characteristics Fig. 22 - On-State Power Loss Characteristics Revision: 02-Apr-15 Document Number: 94357 7 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSK.166..PbF, VS-VSK.196..PbF, VS-VSK.236..PbF Series www.vishay.com At any rated load condition and with rated VRRM applied following surge. Initial TJ = 150 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s Peak Half Sine Wave Forward Curren (A) 4500 4000 3500 3000 2500 2000 5500 VSK.236.. Series 4500 4000 3500 3000 2500 2000 VSK.236.. Series 1500 1000 1500 1 10 0.01 100 Number of Equal Amplitude Half Cycle Current Pulse (A) Fig. 23 - Maximum Non-Repetitive Surge Current Fig. 24 - Maximum Non-Repetitive Surge Current 450 450 400 Maximum Total Forward Power Loss (W) 5K 300 /W 250 0.5 200 0.7 R -Δ 50 0.3 K/ W W W VSK.236.. Series Per junction TJ = 150 °C 100 350 K/ 150 16 K/ 0.1 250 200 25 = 300 0. 0. SA 350 1.0 Pulse Train Duration (s) 400 DC 0.1 R th Maximum Total Forward Power Loss (W) Maximum non-repetitive surge current versus pulse train duration. Initial TJ = 150 °C No voltage reapplied Rated VRRM reapplied 5000 Peak Half Sine Wave Forward Current (A) 5000 Vishay Semiconductors K/W 150 K/W 100 50 0 0 0 50 100 150 200 250 300 350 0 Total RMS Output Current (A) 25 50 75 100 125 150 Maximum Allowable Ambient Temperature (°C) Fig. 25 - On-State Power Loss Characteristics 1600 1400 + ~ 1200 - Maximum Total Power Loss (W) Maximum Total Power Loss (W) 1600 180° (Sine) 180° (Rect) 1000 800 600 2 x VSK.236.. Series Single phase bridge Connected TJ = 150 °C 400 200 R th 0. 1400 04 1200 0.0 /W = K/ W /W 0.1 0. 02 W 6K 8K 1000 SA 0.0 K/ -Δ R 2K 800 /W 0.1 6K /W 0.25 K /W 0.4 K/W 600 400 200 0 0 0 100 200 300 400 Total Output Current (A) 500 0 25 50 75 100 125 150 Maximum Allowable Ambient Temperature (°C) Fig. 26 - On-State Power Loss Characteristics Revision: 02-Apr-15 Document Number: 94357 8 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSK.166..PbF, VS-VSK.196..PbF, VS-VSK.236..PbF Series www.vishay.com Vishay Semiconductors 2500 + ~ 2000 - 120° (Rect) 1500 1000 3 x VSK.236.. Series Three phase bridge Connected TJ = 150 °C 500 Maximum Total Power Loss (W) Maximum Total Power Loss (W) 2500 0 R 2000 th SA 0.0 4K 0.0 1500 = 0. 02 /W K/ W 6K /W 0.1 1000 -Δ R K/W 0.16 K/W 0.3 K/W 500 0.7 K/W 0 0 100 200 300 400 500 600 700 0 Total Output Current (A) 25 50 75 100 125 150 Maximum Allowable Ambient Temperature (°C) 10 000 Instantaneous On-State Current (A) Instantaneous On-State Current (A) Fig. 27 - On-State Power Loss Characteristics 1000 TJ = 25 °C 100 TJ = 150 °C 10 VSK.166.. Series Per junction 1 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 TJ = 25 °C TJ = 150 °C 100 10 VSK.196.. Series Per junction 1 1.0 2.0 3.0 4.0 1000 5.0 Instantaneous On-State Voltage (V) Fig. 29 - On-State Voltage Drop Characteristics TJ = 150 °C 100 10 VSK.236.. Series Per junction 1 0 1.0 2.0 3.0 4.0 5.0 Instantaneous On-State Voltage (V) Fig. 30 - On-State Voltage Drop Characteristics ZthJC - Transient Thermal Impedance Instantaneous On-State Current (A) 10 000 0 TJ = 25 °C 4.0 Instantaneous On-State Voltage (V) Fig. 28 - On-State Voltage Drop Characteristics 1000 10 000 1 Steady state value (DC operation) 0.1 VSK.166.. Series 0.01 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 31 - Thermal Impedance ZthJC Characteristics Revision: 02-Apr-15 Document Number: 94357 9 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSK.166..PbF, VS-VSK.196..PbF, VS-VSK.236..PbF Series Vishay Semiconductors 1 ZthJC - Transient Thermal Impedance ZthJC - Transient Thermal Impedance www.vishay.com Steady state value (DC operation) 0.1 VSK.196.. Series 0.01 0.01 0.1 1.0 10 1 Steady state value (DC operation) 0.1 VSK.236.. Series 0.01 0.01 0.1 1.0 10 Square Wave Pulse Duration (s) Square Wave Pulse Duration (s) Fig. 32 - Thermal Impedance ZthJC Characteristics Fig. 33 - Thermal Impedance ZthJC Characteristics ORDERING INFORMATION TABLE Device code VS-VS KD 236 16 1 2 3 PbF 4 5 1 - Vishay Semiconductors product 2 - Circuit configuration 3 4 - Current rating: IF(AV) Voltage code x 100 = VRRM 5 - PbF = Lead (Pb)-free Note • To order the optional hardware go to www.vishay.com/doc?95172 Revision: 02-Apr-15 Document Number: 94357 10 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSK.166..PbF, VS-VSK.196..PbF, VS-VSK.236..PbF Series www.vishay.com Vishay Semiconductors CIRCUIT CONFIGURATION CIRCUIT DESCRIPTION CIRCUIT CONFIGURATION CODE CIRCUIT DRAWING VSKD... ~ Two diodes doubler circuit + - D + ~ - VSKC... + Two diodes common cathodes - - C + - VSKJ... - Two diodes common anodes + + J + + - VSKE... - Single diode + E + - LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95254 Revision: 02-Apr-15 Document Number: 94357 11 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors INT-A-PAK DBC 28 (1.10) 9 (0.33) 30 (1.18) DIMENSIONS in millimeters (inches) Ø 6.5 (Ø 0.25) 80 (3.15) 23 (0.91) 7 6 5 4 14.5 23 (0.91) (0.57) 35 (1.38) 17 (0.67) 1 2 3 66 (2.60) 37 (1.44) 3 screws M6 x 10 94 (3.70) Document Number: 95254 Revision: 11-Dec-07 For technical questions, contact: [email protected] www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000