VS-VSK.166..PbF, VS-VSK.196..PbF, VS-VSK.236..PbF Series Datasheet

VS-VSK.166..PbF, VS-VSK.196..PbF, VS-VSK.236..PbF Series
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Vishay Semiconductors
Standard Recovery Diodes, 165 A to 230 A
(INT-A-PAK Power Modules)
FEATURES
• High voltage
• Electrically isolated by DBC ceramic (AI2O3)
• 3500 VRMS isolating voltage
• Industrial standard package
• High surge capability
• Glass passivated chips
• Modules uses high voltage power diodes in four basic
configurations
• Simple mounting
• UL approved file E78996
INT-A-PAK
• Designed and qualified for multiple level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRODUCT SUMMARY
IF(AV)
165 A to 230 A
Type
Modules - Diode, High Voltage
Package
INT-A-PAK
Circuit
Single diode, Two diodes common cathode,
Two diodes common cathode, Two diodes
doubler circuit
APPLICATIONS
• DC motor control and drives
• Battery chargers
• Welders
• Power converters
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IF(AV)
CHARACTERISTICS
VSK.166..
VSK.196..
VSK.236..
UNITS
165
195
230
A
100
100
100
°C
260
305
360
50 Hz
4000
4750
5500
60 Hz
4200
4980
5765
TC
IF(RMS)
IFSM
I2t
50 Hz
80
113
151
60 Hz
73
103
138
798
1130
1516
I2t
VRRM
TJ
Range
A
kA2s
kA2s
400 to 1600
V
-40 to +150
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VS-VSK.166
VS-VSK.196
VS-VSK.236
VOLTAGE
CODE
VRRM, MAXIMUM REPETITIVE PEAK
REVERSE VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
04
400
500
08
800
900
12
1200
1300
14
1400
1500
16
1600
1700
IRRM
AT 150 °C
mA
20
Revision: 02-Apr-15
Document Number: 94357
1
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VS-VSK.166..PbF, VS-VSK.196..PbF, VS-VSK.236..PbF Series
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Vishay Semiconductors
FORWARD CONDUCTION
PARAMETER
SYMBOL
Maximum average on-state 
current at case temperature
Maximum RMS on-state current
IF(AV)
TEST CONDITIONS
180° conduction, half sine wave
IF(RMS)
t = 10 ms
Maximum peak, one-cycle
on-state, non-repetitive 
surge current
IFSM
No voltage
reapplied
t = 8.3 ms
100 % VRRM 
reapplied
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I2t for fusing
I2t
Maximum I2t for fusing
I2t
No voltage
reapplied
t = 8.3 ms
Sine half wave,
initial TJ =
TJ maximum
100 % VRRM 
reapplied
t = 10 ms
t = 8.3 ms
VSK.166 VSK.196 VSK.236
195
230
A
100
100
100
°C
260
305
360
4000
4750
5500
4200
4980
5765
3350
4000
4630
3500
4200
4850
80
113
151
73
103
138
56
80
107
52
73
98
t = 0.1 ms to 10 ms, no voltage reapplied
798
1130
1516
Low level value of threshold voltage
VF(TO)1
(16.7 % x  x IF(AV) < I <  x IF(AV)), TJ maximum
0.73
0.69
0.7
High level value of threshold voltage
VF(TO)2
(I >  x IF(AV)), TJ maximum
0.88
0.78
0.83
Low level value on-state
slope resistance
rt1
(16.7 % x  x IF(AV) < I <  x IF(AV)), TJ maximum
1.5
1.3
1.2
High level value on-state
rt2
(I >  x IF(AV)), TJ maximum
1.26
1.2
1.07
VFM
IFM =  x IF(AV), TJ = 25 °C, 180° conduction
Average power = VF(TO) x IF(AV) + rf x (IF(RMS))2
1.43
1.38
1.46
SYMBOL
TEST CONDITIONS
Maximum forward voltage drop
UNITS
165
A
kA2s
kA2s
V
m
V
BLOCKING
PARAMETER
Maximum peak reverse and
off-state leakage current
IRRM
TJ = 150 °C
RMS insulation voltage
VINS
50 Hz, circuit to base, all terminals shorted,
t=1s
VSK.166 VSK.196 VSK.236
UNITS
20
mA
3500
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction operating and
storage temperature range
TEST CONDITIONS
-40 to +150
RthJC
DC operation
Maximum thermal resistance,
case to heatsink per module
RthCS
Mounting surface smooth, flat and greased
Approximate weight
Case style
IAP to heatsink
busbar to IAP
VSK.166 VSK.196 VSK.236
TJ, TStg
Maximum thermal resistance,
junction to case per junction
Mounting
torque ± 10 %
VALUES
0.2
0.16
UNITS
°C
0.14
K/W
A mounting compound is recommended and
the torque should be rechecked after a period
of 3 hours to allow for the spread of
the compound. Lubricated threads.
0.05
4 to 6
Nm
200
g
7.1
oz.
INT-A-PAK
Revision: 02-Apr-15
Document Number: 94357
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VS-VSK.166..PbF, VS-VSK.196..PbF, VS-VSK.236..PbF Series
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Vishay Semiconductors
R CONDUCTION PER JUNCTION
RECTANGULAR CONDUCTION
AT TJ MAXIMUM
SINUSOIDAL CONDUCTION
AT TJ MAXIMUM
DEVICES
UNITS
180°
120°
90°
60°
30°
180°
120°
90°
60°
30°
VSK.166
0.025
0.03
0.038
0.055
0.089
0.018
0.031
0.041
0.057
0.089
VSK.196
0.016
0.019
0.024
0.034
0.053
0.012
0.02
0.026
0.035
0.054
VSK.236
0.009
0.010
0.014
0.018
0.025
0.008
0.012
0.015
0.019
0.025
K/W
Note
• Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC


250
VSK.166.. Series
RthJC (DC) = 0.20 K/W
140
130
Ø
120
Conduction angle
110
100
30°
90
60°
90°
120°
80
180°
Maximum Average Forward
Power Loss (W)
Maximum Allowable Case
Temperature (°C)
150
200
180°
120°
90°
60°
30°
150
RMS limit
100
Ø
Conduction angle
50
0
70
0
40
80
120
160
200
0
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
40
80
120
160
200
Average Forward Current (A)
Fig. 3 - On-State Power Loss Characteristics
150
300
VSK.166.. Series
RthJC (DC) = 0.20 K/W
140
130
Ø
120
Conduction period
110
30°
100
60°
90°
120°
90
80
180°
Maximum Average Forward
Power Loss (W)
Maximum Allowable Case
Temperature (°C)
VSK.166.. Series
TJ = 150 °C
DC
180°
120°
90°
60°
30°
250
200
RMS limit
150
Ø
100
Conduction period
VSK.166.. Series
Per junction
TJ = 150 °C
50
DC
0
70
0
50
100
150
200
250
Average Forward Current (A)
Fig. 2 - Current Ratings Characteristics
300
0
50
100
150
200
250
300
Average Forward Current (A)
Fig. 4 - On-State Power Loss Characteristics
Revision: 02-Apr-15
Document Number: 94357
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VS-VSK.166..PbF, VS-VSK.196..PbF, VS-VSK.236..PbF Series
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At any rated load condition and with
rated VRRM applied following surge.
Initial TJ = 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
Peak Half Sine Wave
Forward Current (A)
3500
3000
2500
2000
4000
1500
3000
2500
2000
1500
1000
VSK.166.. Series
VSK.166.. Series
500
1000
1
10
Fig. 6 - Maximum Non-Repetitive Surge Current
W
K/
W
200
W
0.7
K/
K/W
150
R
-Δ
Maximum Total Forward
Power Loss (W)
K/
.12
0
0.5
W
=0
VSK.166.. Series
Per junction
TJ = 150 °C
50
3
K/
A
100
4
W
150
0.
0.
R thS
250
K/
250
0.2
300
200
1
Pulse Train Duration (s)
300
DC
0.1
0.01
100
Number of Equal Amplitude Half
Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
Maximum Total Forward
Power Loss (W)
Maximum non-repetitive surge current
versus pulse train duration.
Initial TJ = 150 °C
No voltage reapplied
Rated VRRM reapplied
3500
Peak Half Sine Wave
Forward Current (A)
4000
Vishay Semiconductors
100
50
0
0
50
100
150
200
0
250
Total RMS Output Current (A)
25
50
75
100
125
150
Maximum Allowable Ambient Temperature (°C)
Fig. 7 - On-State Power Loss Characteristics
1800
1600
+
~
1400
1200
180°
(Sine)
180°
(Rect)
1000
800
600
2 x VSK.166.. Series
Single phase bridge
Connected
TJ = 150 °C
400
200
0
Maximum Total Power Loss (W)
Maximum Total Power Loss (W)
1800
1600
R
th
SA
1400
0.0
1200
=
0.0
0.
12
4K
/W
6K
K/
W
/W
1000
0.1
800
K/W
0.16
600
-Δ
R
0.25
K/W
K/W
0.5 K/W
400
200
0
0
100
200
300
400
Total Output Current (A)
500
0
25
50
75
100
125
150
Maximum Allowable Ambient Temperature (°C)
Fig. 8 - On-State Power Loss Characteristics
Revision: 02-Apr-15
Document Number: 94357
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VS-VSK.166..PbF, VS-VSK.196..PbF, VS-VSK.236..PbF Series
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Vishay Semiconductors
1000
600
3 x VSK.166.. Series
Three phase bridge
Connected
TJ = 150 °C
400
200
0
K/
W
0.1
1000
800
0.1
K/W
R
-Δ
800
06
W
K/
-
0.
1200
02
0.
120°
(Rect)
=
1200
1400
SA
~
R th
1400
W
K/
Maximum Total Power Loss (W)
1600
04
0.
Maximum Total Power Loss (W)
1600
6K
600
0.25
400
/W
K/W
0.5 K/W
200
0
0
100
200
300
400
0
500
Total Output Current (A)
25
50
75
100
125
150
Maximum Allowable Ambient Temperature (°C)
Fig. 9 - On-State Power Loss Characteristics
300
VSK.196.. Series
RthJC (DC) = 0.16 K/W
140
Maximum Average Forward
Power Loss (W)
Maximum Allowable Case
Temperature (°C)
150
130
Ø
120
Conduction angle
110
100
30°
60°
90
90°
120°
80
180°
70
250
200
RMS limit
150
Ø
100
Conduction angle
VSK.196.. Series
TJ = 150 °C
50
0
0
50
100
150
200
250
0
40
80
120
160
200
Average Forward Current (A)
Average Forward Current (A)
Fig. 10 - Current Ratings Characteristics
Fig. 12 - On-State Power Loss Characteristics
150
350
VSK.196.. Series
RthJC (DC) = 0.16 K/W
140
130
Ø
120
Conduction period
110
30°
100
60°
90°
90
120°
180°
80
Maximum Average Forward
Power Loss (W)
Maximum Allowable Case
Temperature (°C)
180°
120°
90°
60°
30°
DC
180°
120°
90°
60°
30°
300
250
RMS limit
200
150
Ø
Conduction period
100
VSK.196.. Series
Per junction
TJ = 150 °C
50
DC
70
0
0
50
100
150
200
250
300
Average Forward Current (A)
Fig. 11 - Current Ratings Characteristics
350
0
50
100
150
200
250
300
350
Average Forward Current (A)
Fig. 13 - On-State Power Loss Characteristics
Revision: 02-Apr-15
Document Number: 94357
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VS-VSK.166..PbF, VS-VSK.196..PbF, VS-VSK.236..PbF Series
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At any rated load condition and with
rated VRRM applied following surge.
Initial TJ = 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
Peal Half Sine Wave
Forward Current (A)
4000
3500
3000
2500
2000
1500
5000
VSK.196.. Series
10
3500
3000
2500
2000
W
.12
K/
K/W
W
R
-Δ
Maximum Total Forward
Power Loss (W)
=0
0
SA
50
0.7
K/
W
0.5
200
R th
VSK.196.. Series
Per junction
TJ = 150 °C
250
K/
W
100
3
K/
150
0.
0.4
2
300
0.
300
200
1.0
Fig. 15 - Maximum Non-Repetitive Surge Current
350
250
0.1
Pulse Train Duration (s)
350
DC
VSK.196.. Series
1000
0.01
100
Number of Equal Amplitude Half
Cycle Current Pulses (N)
Fig. 14 - Maximum Non-Repetitive Surge Current
Maximum Total Forward
Power Loss (W)
4000
1500
1000
1
Maximum non-repetitive surge current
versus pulse train duration.
Initial TJ = 150 °C
No voltage reapplied
Rated VRRM reapplied
4500
Peak Half Sine Wave
Forward Current (A)
4500
Vishay Semiconductors
K/W
150
100
50
0
0
50
100
150
200
250
0
300
Total RMS Output Current (A)
25
50
75
100
125
150
Maximum Allowable Ambient Temperature (°C)
Fig. 16 - On-State Power Loss Characteristics
02
K/
2K
W
/W
0.1
R
-Δ
0
0.
200
0.1
=
2 x VSK.196.. Series
Single phase bridge
Connected
TJ = 150 °C
800
W
400
0.0
SA
600
0.
06
8 K K/W
/W
1000
K/
800
180°
(Sine)
180°
(Rect)
R th
~
04
+
1000
Maximum Total Power Loss (W)
1200
0.
Maximum Total Power Loss (W)
1200
6K
/W
600
0.25
400
K/W
0.4 K
/W
0.7 K/W
200
0
0
100
200
300
Total Output Current (A)
400
0
25
50
75
100
125
150
Maximum Allowable Ambient Temperature (°C)
Fig. 17 - On-State Power Loss Characteristics
Revision: 02-Apr-15
Document Number: 94357
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Vishay Semiconductors
1800
800
600
3 x VSK.196.. Series
Three phase bridge
Connected
TJ = 150 °C
400
200
1200
K/
W
0.0
8K
/W
1000
R
-Δ
1000
06
W
K/
1200
0.
12
0.
-
1600
1400
=
120°
(Rect)
SA
~
W
K/
Maximum Total Power Loss (W)
1600
1400
R th
+
04
0.
Maximum Total Power Loss (W)
1800
0.1
2K
/W
6K
/W
0.25
K/W
0.4 K
/W
800
0.1
600
400
200
0
0
0
100
200
300
400
500
0
600
25
50
75
100
125
150
Maximum Allowable Ambient Temperature (°C)
Total Output Current (A)
Fig. 18 - On-State Power Loss Characteristics
350
VSK.236.. Series
RthJC (DC) = 0.14 K/W
150
140
Ø
130
Conduction angle
120
110
30°
100
60°
90°
90
120°
Maximum Average Forward
Power Loss (W)
Maximum Allowable Case
Temperature (°C)
160
250
RMS limit
200
150
Ø
Conduction angle
100
VSK.236.. Series
TJ = 150 °C
50
180°
0
80
50
0
100
150
200
0
250
50
100
150
200
250
Average Forward Current (A)
Average Forward Current (A)
Fig. 19 - Current Ratings Characteristics
Fig. 21 - On-State Power Loss Characteristics
450
VSK.236.. Series
RthJC (DC) = 0.14 K/W
140
130
Ø
Conduction period
120
110
30°
100
60°
90
90°
120°
80
180°
DC
Maximum Average Forward
Power Loss (W)
150
Maximum Allowable Case
Temperature (°C)
180°
120°
90°
60°
30°
300
DC
180°
120°
90°
60°
30°
400
350
300
RMS limit
250
200
Ø
Conduction period
150
VSK.236.. Series
Per junction
TJ = 150 °C
100
50
0
70
0
50
100
150
200
250
300
350
400
0
50
100
150
200
250
300
350
400
Average Forward Current (A)
Average Forward Current (A)
Fig. 20 - Current Ratings Characteristics
Fig. 22 - On-State Power Loss Characteristics
Revision: 02-Apr-15
Document Number: 94357
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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VS-VSK.166..PbF, VS-VSK.196..PbF, VS-VSK.236..PbF Series
www.vishay.com
At any rated load condition and with
rated VRRM applied following surge.
Initial TJ = 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
Peak Half Sine Wave
Forward Curren (A)
4500
4000
3500
3000
2500
2000
5500
VSK.236.. Series
4500
4000
3500
3000
2500
2000
VSK.236.. Series
1500
1000
1500
1
10
0.01
100
Number of Equal Amplitude Half
Cycle Current Pulse (A)
Fig. 23 - Maximum Non-Repetitive Surge Current
Fig. 24 - Maximum Non-Repetitive Surge Current
450
450
400
Maximum Total Forward
Power Loss (W)
5K
300
/W
250
0.5
200
0.7
R
-Δ
50
0.3
K/
W
W
W
VSK.236.. Series
Per junction
TJ = 150 °C
100
350
K/
150
16
K/
0.1
250
200
25
=
300
0.
0.
SA
350
1.0
Pulse Train Duration (s)
400
DC
0.1
R th
Maximum Total Forward
Power Loss (W)
Maximum non-repetitive surge current
versus pulse train duration.
Initial TJ = 150 °C
No voltage reapplied
Rated VRRM reapplied
5000
Peak Half Sine Wave
Forward Current (A)
5000
Vishay Semiconductors
K/W
150
K/W
100
50
0
0
0
50
100
150
200
250
300
350
0
Total RMS Output Current (A)
25
50
75
100
125
150
Maximum Allowable Ambient Temperature (°C)
Fig. 25 - On-State Power Loss Characteristics
1600
1400
+
~
1200
-
Maximum Total Power Loss (W)
Maximum Total Power Loss (W)
1600
180°
(Sine)
180°
(Rect)
1000
800
600
2 x VSK.236.. Series
Single phase bridge
Connected
TJ = 150 °C
400
200
R
th
0.
1400
04
1200
0.0
/W
=
K/
W
/W
0.1
0.
02
W
6K
8K
1000
SA
0.0
K/
-Δ
R
2K
800
/W
0.1
6K
/W
0.25 K
/W
0.4 K/W
600
400
200
0
0
0
100
200
300
400
Total Output Current (A)
500
0
25
50
75
100
125
150
Maximum Allowable Ambient Temperature (°C)
Fig. 26 - On-State Power Loss Characteristics
Revision: 02-Apr-15
Document Number: 94357
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-VSK.166..PbF, VS-VSK.196..PbF, VS-VSK.236..PbF Series
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Vishay Semiconductors
2500
+
~
2000
-
120°
(Rect)
1500
1000
3 x VSK.236.. Series
Three phase bridge
Connected
TJ = 150 °C
500
Maximum Total Power Loss (W)
Maximum Total Power Loss (W)
2500
0
R
2000
th
SA
0.0
4K
0.0
1500
=
0.
02
/W
K/
W
6K
/W
0.1
1000
-Δ
R
K/W
0.16
K/W
0.3 K/W
500
0.7 K/W
0
0
100
200
300
400
500
600
700
0
Total Output Current (A)
25
50
75
100
125
150
Maximum Allowable Ambient Temperature (°C)
10 000
Instantaneous On-State Current (A)
Instantaneous On-State Current (A)
Fig. 27 - On-State Power Loss Characteristics
1000
TJ = 25 °C
100
TJ = 150 °C
10
VSK.166.. Series
Per junction
1
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
TJ = 25 °C
TJ = 150 °C
100
10
VSK.196.. Series
Per junction
1
1.0
2.0
3.0
4.0
1000
5.0
Instantaneous On-State Voltage (V)
Fig. 29 - On-State Voltage Drop Characteristics
TJ = 150 °C
100
10
VSK.236.. Series
Per junction
1
0
1.0
2.0
3.0
4.0
5.0
Instantaneous On-State Voltage (V)
Fig. 30 - On-State Voltage Drop Characteristics
ZthJC - Transient Thermal Impedance
Instantaneous On-State Current (A)
10 000
0
TJ = 25 °C
4.0
Instantaneous On-State Voltage (V)
Fig. 28 - On-State Voltage Drop Characteristics
1000
10 000
1
Steady state value
(DC operation)
0.1
VSK.166.. Series
0.01
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 31 - Thermal Impedance ZthJC Characteristics
Revision: 02-Apr-15
Document Number: 94357
9
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-VSK.166..PbF, VS-VSK.196..PbF, VS-VSK.236..PbF Series
Vishay Semiconductors
1
ZthJC - Transient Thermal Impedance
ZthJC - Transient Thermal Impedance
www.vishay.com
Steady state value
(DC operation)
0.1
VSK.196.. Series
0.01
0.01
0.1
1.0
10
1
Steady state value
(DC operation)
0.1
VSK.236.. Series
0.01
0.01
0.1
1.0
10
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
Fig. 32 - Thermal Impedance ZthJC Characteristics
Fig. 33 - Thermal Impedance ZthJC Characteristics
ORDERING INFORMATION TABLE
Device code
VS-VS KD 236 16
1
2
3
PbF
4
5
1
-
Vishay Semiconductors product
2
-
Circuit configuration
3
4
-
Current rating: IF(AV)
Voltage code x 100 = VRRM
5
-
PbF = Lead (Pb)-free
Note
• To order the optional hardware go to www.vishay.com/doc?95172
Revision: 02-Apr-15
Document Number: 94357
10
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-VSK.166..PbF, VS-VSK.196..PbF, VS-VSK.236..PbF Series
www.vishay.com
Vishay Semiconductors
CIRCUIT CONFIGURATION
CIRCUIT DESCRIPTION
CIRCUIT
CONFIGURATION CODE
CIRCUIT DRAWING
VSKD...
~
Two diodes doubler circuit
+
-
D
+
~
-
VSKC...
+
Two diodes common cathodes
-
-
C
+
-
VSKJ...
-
Two diodes common anodes
+
+
J
+
+
-
VSKE...
-
Single diode
+
E
+
-
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95254
Revision: 02-Apr-15
Document Number: 94357
11
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
INT-A-PAK DBC
28 (1.10)
9 (0.33)
30 (1.18)
DIMENSIONS in millimeters (inches)
Ø 6.5 (Ø 0.25)
80 (3.15)
23 (0.91)
7
6
5
4
14.5
23 (0.91)
(0.57)
35 (1.38)
17 (0.67)
1
2
3
66 (2.60)
37 (1.44)
3 screws M6 x 10
94 (3.70)
Document Number: 95254
Revision: 11-Dec-07
For technical questions, contact: [email protected]
www.vishay.com
1
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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disclosure relating to any product.
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operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
1
Document Number: 91000